TIS75_J35Z onsemi
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 4 nA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Description: JFET N-CH 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 4 nA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
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Технічний опис TIS75_J35Z onsemi
Description: JFET N-CH 30V TO92-3, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS), Voltage - Breakdown (V(BR)GSS): 30 V, Supplier Device Package: TO-92-3, Power - Max: 350 mW, Resistance - RDS(On): 60 Ohms, Voltage - Cutoff (VGS off) @ Id: 800 mV @ 4 nA, Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V.