TP65H070LSG Transphorm

Description: GANFET N-CH 650V 25A 3PQFN, Packaging: Tube, Package / Case: 3-PowerDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Cascode Gallium Nitride FET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 700µA, Supplier Device Package: 3-PQFN (8x8), Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V.