YQ10RSM10SDTL1 ROHM Semiconductor
Виробник: ROHM Semiconductor
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stabl
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stabl
на замовлення 3989 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 89.57 грн |
| 10+ | 72.09 грн |
| 100+ | 48.94 грн |
| 500+ | 41.46 грн |
| 1000+ | 33.78 грн |
| 2000+ | 31.78 грн |
| 4000+ | 30.31 грн |
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Технічний опис YQ10RSM10SDTL1 ROHM Semiconductor
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stabl.