YQ20BGE10SDTL ROHM Semiconductor
Виробник: ROHM Semiconductor
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable
на замовлення 4978 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
4+ | 98.14 грн |
10+ | 78.31 грн |
100+ | 53.28 грн |
500+ | 45.13 грн |
1000+ | 40.79 грн |
2500+ | 34.65 грн |
5000+ | 32.98 грн |
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Технічний опис YQ20BGE10SDTL ROHM Semiconductor
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable.