YQ30NL10SEFHTL ROHM Semiconductor
Виробник: ROHM Semiconductor
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF i
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF i
на замовлення 755 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 166.68 грн |
| 10+ | 136.66 грн |
| 100+ | 94.13 грн |
| 500+ | 79.45 грн |
| 1000+ | 66.43 грн |
| 2000+ | 63.36 грн |
| 5000+ | 62.49 грн |
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Технічний опис YQ30NL10SEFHTL ROHM Semiconductor
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF i.