Продукція > QORVO (UNITEDSIC) > Всі товари виробника QORVO (UNITEDSIC) (29) > Сторінка 1 з 1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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UF3C065030K3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A Case: TO247-3 Mounting: THT Features of semiconductor devices: ESD protected gate Technology: SiC Drain-source voltage: 650V Drain current: 62A On-state resistance: 27mΩ Type of transistor: N-JFET/N-MOSFET Power dissipation: 441W Polarisation: unipolar Gate charge: 51nC Kind of transistor: cascode Gate-source voltage: ±25V Pulsed drain current: 230A |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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UF3C065030K3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A Case: TO247-3 Mounting: THT Features of semiconductor devices: ESD protected gate Technology: SiC Drain-source voltage: 650V Drain current: 62A On-state resistance: 27mΩ Type of transistor: N-JFET/N-MOSFET Power dissipation: 441W Polarisation: unipolar Gate charge: 51nC Kind of transistor: cascode Gate-source voltage: ±25V Pulsed drain current: 230A кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 7-14 дні (днів) |
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UF3C065030K4S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A Case: TO247-4 Mounting: THT Features of semiconductor devices: ESD protected gate; Kelvin terminal Technology: SiC Drain-source voltage: 650V Drain current: 62A On-state resistance: 27mΩ Type of transistor: N-JFET/N-MOSFET Power dissipation: 441W Polarisation: unipolar Gate charge: 43nC Kind of transistor: cascode Gate-source voltage: ±25V Pulsed drain current: 230A |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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UF3C065030K4S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A Case: TO247-4 Mounting: THT Features of semiconductor devices: ESD protected gate; Kelvin terminal Technology: SiC Drain-source voltage: 650V Drain current: 62A On-state resistance: 27mΩ Type of transistor: N-JFET/N-MOSFET Power dissipation: 441W Polarisation: unipolar Gate charge: 43nC Kind of transistor: cascode Gate-source voltage: ±25V Pulsed drain current: 230A кількість в упаковці: 1 шт |
на замовлення 5 шт: термін постачання 7-14 дні (днів) |
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UF3C065040K3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 40A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 125A Power dissipation: 326W Case: TO247-3 Gate-source voltage: ±25V On-state resistance: 42mΩ Mounting: THT Gate charge: 51nC Features of semiconductor devices: ESD protected gate |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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UF3C065040K3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 40A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 125A Power dissipation: 326W Case: TO247-3 Gate-source voltage: ±25V On-state resistance: 42mΩ Mounting: THT Gate charge: 51nC Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 5 шт: термін постачання 7-14 дні (днів) |
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UF3C065080K4S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 23A Pulsed drain current: 65A Power dissipation: 190W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: THT Gate charge: 43nC Features of semiconductor devices: ESD protected gate; Kelvin terminal |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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UF3C065080K4S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 23A Pulsed drain current: 65A Power dissipation: 190W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: THT Gate charge: 43nC Features of semiconductor devices: ESD protected gate; Kelvin terminal кількість в упаковці: 1 шт |
на замовлення 4 шт: термін постачання 7-14 дні (днів) |
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UJ2D1220K | Qorvo (UnitedSiC) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 60/272W; UJ2D Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Power dissipation: 60/272W Semiconductor structure: common cathode; double Case: TO247-3 Max. forward impulse current: 120A Max. forward voltage: 1.5V Manufacturer series: UJ2D |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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UJ2D1220K | Qorvo (UnitedSiC) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 60/272W; UJ2D Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Power dissipation: 60/272W Semiconductor structure: common cathode; double Case: TO247-3 Max. forward impulse current: 120A Max. forward voltage: 1.5V Manufacturer series: UJ2D кількість в упаковці: 1 шт |
на замовлення 7 шт: термін постачання 7-14 дні (днів) |
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UJ3C065030B3 | Qorvo (UnitedSiC) |
Category: SMD N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 47A Mounting: SMD Drain-source voltage: 650V Drain current: 47A On-state resistance: 27mΩ Type of transistor: N-JFET/N-MOSFET Power dissipation: 250W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 51nC Technology: SiC Kind of transistor: cascode Gate-source voltage: ±25V Pulsed drain current: 230A Case: D2PAK |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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UJ3C065030B3 | Qorvo (UnitedSiC) |
Category: SMD N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 47A Mounting: SMD Drain-source voltage: 650V Drain current: 47A On-state resistance: 27mΩ Type of transistor: N-JFET/N-MOSFET Power dissipation: 250W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 51nC Technology: SiC Kind of transistor: cascode Gate-source voltage: ±25V Pulsed drain current: 230A Case: D2PAK кількість в упаковці: 1 шт |
на замовлення 15 шт: термін постачання 7-14 дні (днів) |
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UJ3C065030K3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 62A Pulsed drain current: 230A Power dissipation: 441W Case: TO247-3 Gate-source voltage: ±25V On-state resistance: 30mΩ Mounting: THT Gate charge: 51nC Features of semiconductor devices: ESD protected gate |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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UJ3C065030K3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 62A Pulsed drain current: 230A Power dissipation: 441W Case: TO247-3 Gate-source voltage: ±25V On-state resistance: 30mΩ Mounting: THT Gate charge: 51nC Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 22 шт: термін постачання 7-14 дні (днів) |
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UJ3C065030T3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 62A Pulsed drain current: 230A Power dissipation: 441W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 27mΩ Mounting: THT Gate charge: 51nC Features of semiconductor devices: ESD protected gate |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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UJ3C065030T3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 62A Pulsed drain current: 230A Power dissipation: 441W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 27mΩ Mounting: THT Gate charge: 51nC Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 9 шт: термін постачання 7-14 дні (днів) |
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UJ3C065080B3 | Qorvo (UnitedSiC) |
Category: SMD N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A Mounting: SMD Drain-source voltage: 650V Drain current: 18.2A On-state resistance: 80mΩ Type of transistor: N-JFET/N-MOSFET Power dissipation: 115W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 51nC Technology: SiC Kind of transistor: cascode Gate-source voltage: ±25V Pulsed drain current: 65A Case: D2PAK |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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UJ3C065080B3 | Qorvo (UnitedSiC) |
Category: SMD N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A Mounting: SMD Drain-source voltage: 650V Drain current: 18.2A On-state resistance: 80mΩ Type of transistor: N-JFET/N-MOSFET Power dissipation: 115W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 51nC Technology: SiC Kind of transistor: cascode Gate-source voltage: ±25V Pulsed drain current: 65A Case: D2PAK кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 7-14 дні (днів) |
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UJ3C065080K3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 23A Pulsed drain current: 65A Power dissipation: 190W Case: TO247-3 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: THT Gate charge: 51nC Features of semiconductor devices: ESD protected gate |
товар відсутній |
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UJ3C065080K3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 23A Pulsed drain current: 65A Power dissipation: 190W Case: TO247-3 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: THT Gate charge: 51nC Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
товар відсутній |
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UJ3C065080T3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 23A Pulsed drain current: 65A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: THT Gate charge: 51nC Features of semiconductor devices: ESD protected gate |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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UJ3C065080T3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 23A Pulsed drain current: 65A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: THT Gate charge: 51nC Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 19 шт: термін постачання 7-14 дні (днів) |
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UJ3C120040K3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 1.2kV; 47A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 1.2kV Drain current: 47A Pulsed drain current: 175A Power dissipation: 429W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 51nC Features of semiconductor devices: ESD protected gate |
товар відсутній |
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UJ3C120040K3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 1.2kV; 47A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 1.2kV Drain current: 47A Pulsed drain current: 175A Power dissipation: 429W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 51nC Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
товар відсутній |
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UJ3D06530TS | Qorvo (UnitedSiC) | UJ3D06530TS THT Schottky diodes |
товар відсутній |
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UJ3D1220KSD | Qorvo (UnitedSiC) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 53.2/468.8W Mounting: THT Manufacturer series: UJ3D Case: TO247-3 Power dissipation: 53.2/468.8W Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Max. off-state voltage: 1.2kV Max. forward voltage: 1.4V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 220A |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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UJ3D1220KSD | Qorvo (UnitedSiC) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 53.2/468.8W Mounting: THT Manufacturer series: UJ3D Case: TO247-3 Power dissipation: 53.2/468.8W Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Max. off-state voltage: 1.2kV Max. forward voltage: 1.4V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 220A кількість в упаковці: 1 шт |
на замовлення 5 шт: термін постачання 7-14 дні (днів) |
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UJD06504TS | Qorvo (UnitedSiC) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 9/71W; TO220-2; UJD Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Power dissipation: 9/71W Semiconductor structure: single diode Case: TO220-2 Max. forward impulse current: 24A Max. forward voltage: 1.5V Manufacturer series: UJD |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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UJD06504TS | Qorvo (UnitedSiC) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 9/71W; TO220-2; UJD Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Power dissipation: 9/71W Semiconductor structure: single diode Case: TO220-2 Max. forward impulse current: 24A Max. forward voltage: 1.5V Manufacturer series: UJD кількість в упаковці: 1 шт |
на замовлення 17 шт: термін постачання 7-14 дні (днів) |
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UF3C065030K3S |
Виробник: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Case: TO247-3
Mounting: THT
Features of semiconductor devices: ESD protected gate
Technology: SiC
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 51nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Case: TO247-3
Mounting: THT
Features of semiconductor devices: ESD protected gate
Technology: SiC
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 51nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
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1+ | 3366.67 грн |
UF3C065030K3S |
Виробник: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Case: TO247-3
Mounting: THT
Features of semiconductor devices: ESD protected gate
Technology: SiC
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 51nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Case: TO247-3
Mounting: THT
Features of semiconductor devices: ESD protected gate
Technology: SiC
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 51nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
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1+ | 4040 грн |
UF3C065030K4S |
Виробник: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Case: TO247-4
Mounting: THT
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Technology: SiC
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 43nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Case: TO247-4
Mounting: THT
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Technology: SiC
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 43nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
на замовлення 5 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3767.16 грн |
3+ | 3486.12 грн |
5+ | 3363.8 грн |
UF3C065030K4S |
Виробник: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Case: TO247-4
Mounting: THT
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Technology: SiC
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 43nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Case: TO247-4
Mounting: THT
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Technology: SiC
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 43nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
кількість в упаковці: 1 шт
на замовлення 5 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4520.59 грн |
3+ | 4344.25 грн |
5+ | 4036.56 грн |
UF3C065040K3S |
Виробник: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 125A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 125A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
на замовлення 5 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2596.73 грн |
3+ | 2383.84 грн |
5+ | 2318.46 грн |
UF3C065040K3S |
Виробник: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 125A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 125A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 5 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3116.08 грн |
3+ | 2970.63 грн |
5+ | 2782.15 грн |
UF3C065080K4S |
Виробник: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 43nC
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 43nC
Features of semiconductor devices: ESD protected gate; Kelvin terminal
на замовлення 4 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1790.46 грн |
2+ | 1583.13 грн |
3+ | 1536.03 грн |
UF3C065080K4S |
Виробник: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 43nC
Features of semiconductor devices: ESD protected gate; Kelvin terminal
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 43nC
Features of semiconductor devices: ESD protected gate; Kelvin terminal
кількість в упаковці: 1 шт
на замовлення 4 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2148.55 грн |
2+ | 1972.83 грн |
3+ | 1843.24 грн |
5+ | 1826.37 грн |
UJ2D1220K |
Виробник: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 60/272W; UJ2D
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Power dissipation: 60/272W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 120A
Max. forward voltage: 1.5V
Manufacturer series: UJ2D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 60/272W; UJ2D
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Power dissipation: 60/272W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 120A
Max. forward voltage: 1.5V
Manufacturer series: UJ2D
на замовлення 7 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 738.9 грн |
3+ | 683.31 грн |
UJ2D1220K |
Виробник: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 60/272W; UJ2D
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Power dissipation: 60/272W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 120A
Max. forward voltage: 1.5V
Manufacturer series: UJ2D
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 60/272W; UJ2D
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Power dissipation: 60/272W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 120A
Max. forward voltage: 1.5V
Manufacturer series: UJ2D
кількість в упаковці: 1 шт
на замовлення 7 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 886.67 грн |
3+ | 851.5 грн |
UJ3C065030B3 |
Виробник: Qorvo (UnitedSiC)
Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Mounting: SMD
Drain-source voltage: 650V
Drain current: 47A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Case: D2PAK
Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Mounting: SMD
Drain-source voltage: 650V
Drain current: 47A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Case: D2PAK
на замовлення 15 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2559.64 грн |
UJ3C065030B3 |
Виробник: Qorvo (UnitedSiC)
Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Mounting: SMD
Drain-source voltage: 650V
Drain current: 47A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Case: D2PAK
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Mounting: SMD
Drain-source voltage: 650V
Drain current: 47A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Case: D2PAK
кількість в упаковці: 1 шт
на замовлення 15 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3071.56 грн |
UJ3C065030K3S |
Виробник: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
на замовлення 22 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2178.08 грн |
2+ | 1912.83 грн |
10+ | 1907.91 грн |
UJ3C065030K3S |
Виробник: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 22 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2613.69 грн |
2+ | 2383.68 грн |
10+ | 2289.5 грн |
30+ | 2208.51 грн |
UJ3C065030T3S |
Виробник: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
на замовлення 9 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2216.69 грн |
2+ | 1946.58 грн |
UJ3C065030T3S |
Виробник: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2660.02 грн |
2+ | 2425.73 грн |
10+ | 2324.08 грн |
50+ | 2245.63 грн |
UJ3C065080B3 |
Виробник: Qorvo (UnitedSiC)
Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Mounting: SMD
Drain-source voltage: 650V
Drain current: 18.2A
On-state resistance: 80mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 65A
Case: D2PAK
Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Mounting: SMD
Drain-source voltage: 650V
Drain current: 18.2A
On-state resistance: 80mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 65A
Case: D2PAK
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 962.99 грн |
UJ3C065080B3 |
Виробник: Qorvo (UnitedSiC)
Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Mounting: SMD
Drain-source voltage: 650V
Drain current: 18.2A
On-state resistance: 80mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 65A
Case: D2PAK
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Mounting: SMD
Drain-source voltage: 650V
Drain current: 18.2A
On-state resistance: 80mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 65A
Case: D2PAK
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1155.58 грн |
2+ | 961.88 грн |
3+ | 875.64 грн |
UJ3C065080K3S |
Виробник: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
товар відсутній
UJ3C065080K3S |
Виробник: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
UJ3C065080T3S |
Виробник: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
на замовлення 19 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 861.54 грн |
2+ | 725.48 грн |
3+ | 724.78 грн |
4+ | 685.41 грн |
10+ | 683.31 грн |
UJ3C065080T3S |
Виробник: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 19 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1033.85 грн |
2+ | 904.07 грн |
3+ | 869.74 грн |
4+ | 822.5 грн |
10+ | 819.97 грн |
50+ | 792.13 грн |
UJ3C120040K3S |
Виробник: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 1.2kV; 47A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 1.2kV
Drain current: 47A
Pulsed drain current: 175A
Power dissipation: 429W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 1.2kV; 47A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 1.2kV
Drain current: 47A
Pulsed drain current: 175A
Power dissipation: 429W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
товар відсутній
UJ3C120040K3S |
Виробник: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 1.2kV; 47A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 1.2kV
Drain current: 47A
Pulsed drain current: 175A
Power dissipation: 429W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 1.2kV; 47A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 1.2kV
Drain current: 47A
Pulsed drain current: 175A
Power dissipation: 429W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
UJ3D1220KSD |
Виробник: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 53.2/468.8W
Mounting: THT
Manufacturer series: UJ3D
Case: TO247-3
Power dissipation: 53.2/468.8W
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 220A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 53.2/468.8W
Mounting: THT
Manufacturer series: UJ3D
Case: TO247-3
Power dissipation: 53.2/468.8W
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 220A
на замовлення 5 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1072.76 грн |
3+ | 942.01 грн |
UJ3D1220KSD |
Виробник: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 53.2/468.8W
Mounting: THT
Manufacturer series: UJ3D
Case: TO247-3
Power dissipation: 53.2/468.8W
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 220A
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 53.2/468.8W
Mounting: THT
Manufacturer series: UJ3D
Case: TO247-3
Power dissipation: 53.2/468.8W
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 220A
кількість в упаковці: 1 шт
на замовлення 5 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1287.31 грн |
3+ | 1173.88 грн |
UJD06504TS |
Виробник: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 9/71W; TO220-2; UJD
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Power dissipation: 9/71W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 24A
Max. forward voltage: 1.5V
Manufacturer series: UJD
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 9/71W; TO220-2; UJD
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Power dissipation: 9/71W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 24A
Max. forward voltage: 1.5V
Manufacturer series: UJD
на замовлення 17 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 81.55 грн |
10+ | 75.22 грн |
UJD06504TS |
Виробник: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 9/71W; TO220-2; UJD
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Power dissipation: 9/71W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 24A
Max. forward voltage: 1.5V
Manufacturer series: UJD
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 9/71W; TO220-2; UJD
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Power dissipation: 9/71W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 24A
Max. forward voltage: 1.5V
Manufacturer series: UJD
кількість в упаковці: 1 шт
на замовлення 17 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 101.62 грн |
10+ | 90.26 грн |