Продукція > RENESAS > Всі товари виробника RENESAS (14206) > Сторінка 1 з 237

Виробник: Renesas
Транзистори > Польові N-канальні
Корпус: TO-220F
Uds,V: 600 V
Idd,A: 7 A
Rds(on), Ohm: 1,3 Ohm
Ciss, pF/Qg, nC: 1100/ -
Примітка: Ізольований корпус
Монтаж: THT

Виробник: Renesas
Транзистори > Біполярні NPN
Корпус: TO-92
fT: 350 MHz
Uceo,V: 120 V
Ucbo,V: 120 V
Ic,A: 0,05 A
h21: 800

Виробник: Renesas
Транзистори > Польові P-канальні
Корпус: TO-3
Uds,V: 160 V
Id,A: 7 A
Монтаж: THT

Виробник: Renesas
Мікросхеми > Аналогові
Корпус: DIP-16
Функціональний опис: Analog switch
Напруга живлення: 5…14 V
Темп.діапазон: -20...+75°C

Виробник: Renesas
Модульні елементи > Радіомодулі
Функціональний опис: Малошумний підсилювач для GPS та мобільної телекомунікації
Габарити: 6-pin
Живлення: 2,7...3,3 V
Т, °C: -25...+85°C

Виробник: Renesas
Транзистори > Польові N-канальні
Uds,V: 160 V
Idd,A: 7 А
Ciss, pF/Qg, nC: 600/
Монтаж: THT

Виробник: Renesas
Мікросхеми > Інтерфейсні

Виробник: Renesas
Транзистори > Польові N-канальні
Uds,V: 160 V
Idd,A: 7 А
Ciss, pF/Qg, nC: 600/
Монтаж: THT

Виробник: Renesas
Мікросхеми > Мікроконтролери
Тип корпуса: SSOP-16
Короткий опис: 8BIT 1KB FLASH
Живлення, В: 2,0...5,5 V
Тип ядра: 78K0S
Розрядність: 8-Bit
Частота: 10MHz
Робоча температура, °С: -40…+85°C

Виробник: Renesas
Мікросхеми > Логіка
Корпус: DIP-14
Опис: Quadruple 2-Input NAND Gates
Монтаж: THT
Живлення,V: 4,75...5,25 V
T°C: -20...+75°C
Тип логіч. елем.: NAND

Виробник: Renesas
Транзистори > IGBT
Корпус: TO-3P
Vces: 600 V
Vce: 1,35 V
Ic 25: 90 A
Ic 100: 50 A
Pd 25: 328 W
td(on)/td(off) 100-150 град: 63/142

Виробник: Renesas
Мікросхеми > Пам'ять
Корпус: LQFP-48
Функціональний опис: MICON FLASH 64K+4KROM 2KRAM
Живлення,V: 3...5,5 V
T°C: -40...+85°C

Виробник: Renesas
Мікросхеми > Пам'ять
Корпус: LSSOP-20
Функціональний опис: 16BitMCU 8k Flash 512kRAM 20MHz
Живлення,V: 2,7...4,5 V
T°C: -20...+85°C

Виробник: Renesas
Транзистори > IGBT
Корпус: TO-3P
Vces: 600 V
Vce: 1,6 V
Ic 25: 90 A
Ic 100: 50 A

Виробник: Renesas
Транзистори > Польові N-канальні
Uds,V: 16 V
Idd,A: 3 А
Rds(on), Ohm: 0,25 Ohm
Ciss, pF/Qg, nC: 240/
Монтаж: SMD

Виробник: Renesas
Мікросхеми > Мікроконтролери
Короткий опис: 4-bit microcomputer with large-capacity memory

Виробник: Renesas
Транзистори > IGBT
Корпус: TO-220FN
Vces: 430 V

Виробник: Renesas
Мікросхеми > Інші мікросхеми
Корпус: SO-8
Функціональний опис: Array NPN transistor. VCEO: 8V. VCBO: 12V. VEBO:5,5V. IC:30mA

Виробник: Renesas
Мікросхеми > Пам'ять
Корпус: SOIC-32
Функціональний опис: SRAM 1MBIT 55NS
Живлення,V: 4,5...5,5 V
T°C: -40...+85°C
Вид пам’яті: SRAM
Ємність пам’яті: 1 Мбіт
Інтерфейс: Parallel

Виробник: Renesas
Транзистори > Польові P-канальні
Uds,V: 60 V
Id,A: 30 A
Rds(on),Om: 24 Ohm
Ciss, pF/Qg, nC: 4120/140

Виробник: Renesas
Мікросхеми > Оптрони (оптопари)
Корпус: SOP-4
Тип: Транзистор
Uізол,kV: 3,7 kV
Iвх/Iвых,mA: 50/ 60 mA
Uвых,V: 70 V
Ton/Toff,µs: 8/10
Роб.темп.,°С: -55…+100°C
1

Виробник: Renesas
Мікросхеми > Аналогові
Корпус: PQFN-32
Функціональний опис: Power Management Specialised - PMIC Smart Power Stage (SPS) Module with Integrated High-Accuracy
Напруга живлення: 4,5...18 V
Темп.діапазон: -40...+125°C

Виробник: Renesas
Мікросхеми > Мікроконтролери
Тип корпуса: DIP-40
Короткий опис: Microprocessors - MPU CPU 16BIT 5V CMOS 8MHZ
Живлення, В: 5 V
Тип ядра: 80C86

Виробник: Renesas
Транзистори > Польові N-канальні
Uds,V: 60 V
Idd,A: 40 A
Rds(on), Ohm: 15 Ohm
Ciss, pF/Qg, nC: 1500/
Монтаж: THT

Виробник: Renesas
Мікросхеми > Мікроконтролери
Тип корпуса: LFQFP-48
Короткий опис: RX RX100 Mikrocontroller IC 32-Bit 32MHz 32KB (32K x 8) FLASH
Живлення, В: 1,8...3,6 V
Тип ядра: RX
Розрядність: 32-Bit
Частота: 32MHz

Виробник: Renesas
Модульні елементи > Програматори, засоби налагодження
Опис: The Renesas Promotion Board is pre-programmed to work with the GUI provided on the included DVD to demonstrate the key low power capabilities of the RL78/L12 device family along with it's direct drive LCD functionality. The RPBRL78L12 includes RL78/L12 CPU board with custom segment LCD integrated, On Chip Debugger (OCD), Eclipse based e2studio (a Integrated Development Environment), Free of charge GNU compiler and Example embedded code, extensive documentation. This device family is also fully supported by our key development partner IAR Systems.

Виробник: Renesas
Description: MICROCONTROLLER, 32-BIT, SH7000
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified

Виробник: Renesas
Description: 2SA952 - SMALL SIGNAL BIPOLAR TR
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 70mA, 700mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 600 mW

Виробник: Renesas
Description: X9317 - DIGITAL POTENTIOMETER

Виробник: Renesas
Description: X9317 - DIGITAL POTENTIOMETER

Виробник: Renesas
Description: IC SIGE:C LNA 6 MINIMOLD

Виробник: Renesas
Description: MICROCONTROLLER, 32-BIT, V850, 2
Packaging: Bulk
DigiKey Programmable: Not Verified

Виробник: Renesas
Description: IC MCU 16BIT 16KB FLASH 64LFQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: R8C
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, SSU, UART/USART
Peripherals: LCD, POR, PWM, Voltage Detect, WDT
Supplier Device Package: 64-LFQFP (10x10)
Part Status: Active
Number of I/O: 56
DigiKey Programmable: Not Verified

Виробник: Renesas
Description: GAAS MMIC SPDT SWITCH, ROHS COMP

Виробник: Renesas
Description: STANDARD SRAM, 2MX36, 0.45NS, CM
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified

Виробник: Renesas
Description: ADJUSTABLE POSITIVE STANDARD REG
Packaging: Bulk

Виробник: Renesas
Description: STANDARD SRAM, 32KX8, 70NS, CMOS
Packaging: Bulk
DigiKey Programmable: Not Verified

Виробник: Renesas
Description: R1LV3216R - LOW POWER SRAM, 2MX1
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified

Виробник: Renesas
Description: IC MCU 16BIT 8KB FLASH 32LQFP
Packaging: Bulk
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: R8C
Data Converters: A/D 5x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, SIO, SSU, UART/USART
Peripherals: LCD, POR, PWM, Voltage Detect, WDT
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified

Виробник: Renesas
Description: ENCODERS, DECODERS, MULTIPLEXERS
Packaging: Bulk
Package / Case: 24-CDIP (0.600", 15.24mm)
Mounting Type: Through Hole
Type: Manchester Encoder/Decoder
Voltage - Supply, Analog: 4.5V ~ 5.5V
Voltage - Supply, Digital: 4.5V ~ 5.5V
Applications: Security Systems
Supplier Device Package: 24-CERDIP
Part Status: Obsolete

Виробник: Renesas
Description: HN58C257 - PARALLEL 256KBIT EEPR

Виробник: Renesas
Description: HVD355 - VARIABLE CAPACITANCE DI
Packaging: Bulk
Package / Case: SOD-723
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 2.95pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: 2-SFP
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 2.2

Виробник: Renesas
Description: 2SK3575 - SWITCHING N-CHANNEL PO
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 42A, 10V
Power Dissipation (Max): 1.5W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V

Виробник: Renesas
Description: 2SK2461 - SILICON N CHANNEL MOSF
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V

Виробник: Renesas
Description: NNCD6.2MF-T1B-AT - LOW CAPACITAN
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 20pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: SC-70
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.7V
Power - Peak Pulse: 2W
Power Line Protection: No

Виробник: Renesas
Description: NP60N04ILF-E1-AZ - SWITCHINGN-CH
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3Z)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V

Виробник: Renesas
Description: 2SK4150TZ - N-CHANNEL POWER MOSF
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 5.7Ohm @ 200mA, 4V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TO-92
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 25 V

Виробник: Renesas
Description: 2SK4178 - SWITCHING N-CHANNEL PO
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V

Виробник: Renesas
Description: UPA2004 - DARLINGTON TRANSISTOR

Виробник: Renesas
Description: 2SK2933 - N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 8A, 10V
Power Dissipation (Max): 25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220CFM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V

Виробник: Renesas
Description: DOUBLE BALANCED MIXER
Packaging: Bulk
Part Status: Active

Виробник: Renesas
Description: NP88N04NUG-S18-AY - MOS FIELD EF

Виробник: Renesas
Description: 2SA1836-T1-A - PNP SILICON EPITA
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW

Виробник: Renesas
Description: 2SJ494 - SWITCHING P-CHANNEL POW
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: MP-45F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V

Виробник: Renesas
Description: RJH60D1 - INSULATED GATE BIPOLAR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-220FP
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/42ns
Switching Energy: 100µJ (on), 130µJ (off)
Test Condition: 300V, 10A, 5Ohm, 15V
Gate Charge: 13 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 30 W

Виробник: Renesas
Description: RJH60D0 - INSULATED GATE BIPOLAR
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 35ns/90ns
Test Condition: 300V, 22A, 5Ohm, 15V
Gate Charge: 45 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 140 W

Виробник: Renesas
Description: 2SJ532 - P-CHANNEL POWER MOSFET,
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220CFM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 10 V

Виробник: Renesas
Description: 2SJ529L06 - P-CHANNEL POWER MOSF
Packaging: Bulk
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK(L)-(2)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 10 V

Виробник: Renesas
Description: UPC78M12 - POSITIVE VOLTAGE REGU
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 350mA
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: MP-45G
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
PSRR: 78dB (120Hz)
Voltage Dropout (Max): 2V @ 350mA
Protection Features: Over Current, Over Temperature

Виробник: Renesas
Description: IC MCU 16BIT 52KB FLASH 80TQFP
Packaging: Bulk
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14bSAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified