Результат пошуку "1N4151" : > 120
Вид перегляду :
Мінімальне замовлення: 2500
| Фото | Назва | Виробник | Інформація |
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| 1N4151TR |
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на замовлення 2100 шт: термін постачання 14-28 дні (днів) |
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| SMB-321611-N4-151A |
на замовлення 5600 шт: термін постачання 14-28 дні (днів) |
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| Диод 1N4151 |
на замовлення 16 шт: термін постачання 2-3 дні (днів) |
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| LL4151 | LGE |
0,3A; 50V; packaging: tape&reel diode 1N4151 SOD80 MiniMELF LGE DI1N4151 LGE кількість в упаковці: 2500 шт |
на замовлення 5000 шт: термін постачання 28-31 дні (днів) |
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1N4151 Код товару: 173219 |
Діоди, діодні мости, стабілітрони > Діоди випрямні й імпульсні |
товар відсутній
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1N4151 | Microchip Technology |
Description: DIODE GEN PURP 75V 200MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 2 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 50 nA @ 50 V |
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1N4151 | Diotec Semiconductor |
Diode Small Signal Switching 75V 0.2A 2-Pin DO-35 Ammo |
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| 1N4151 | onsemi / Fairchild |
Diodes - General Purpose, Power, Switching High Conductance Ultra Fast |
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1N4151 | Microchip Technology |
Rectifier Diode Switching 75V 0.2A 2ns 2-Pin DO-35 Bag |
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| 1N4151 | Diotec Semiconductor |
Description: DIODE GEN PURP 50V 0.2A DO35 Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 50 nA @ 50 V |
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1N4151 | onsemi |
Description: SMALL SIGNAL DIODE DO35 75V 175C Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 50 nA @ 50 V |
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1N4151 | Diotec Semiconductor |
Diode Small Signal Switching 75V 0.2A 2-Pin DO-35 Ammo |
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| 1N4151 | Vishay Semiconductors |
Diodes - General Purpose, Power, Switching |
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1N4151 | ON Semiconductor |
Rectifier Diode Small Signal Switching 75V 0.15A 4ns 2-Pin DO-35 Bulk |
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| 1N4151 | Diotec Semiconductor |
Description: DIODE GEN PURP 50V 0.2A DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 50 nA @ 50 V |
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1N4151 | Microchip Technology |
Rectifier Diode Switching 75V 0.2A 2ns 2-Pin DO-35 Bag |
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1N4151 | EIC Semiconductor |
Diode Switching 75V 0.15A 2-Pin DO-35 |
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1N4151 | Microchip Technology |
Diodes - General Purpose, Power, Switching Signal or Computer Diode |
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| 1N4151 SE-PACK | Vishay Semiconductors | Vishay |
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1N4151-F | Rectron |
Diodes - General Purpose, Power, Switching DO-35gls,0.3A,75V,Switching,Tape&ammo |
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1N4151-T | Rectron |
Diode Switching 50V 0.5A 2-Pin DO-35 T/R |
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1N4151-T | Rectron |
Diodes - General Purpose, Power, Switching Vr/75V Io/150mA T/R |
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| 1N4151/TR | Microchip Technology |
Switching Diode |
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1N4151/TR | Microchip Technology |
Rectifier Diode Switching 75V 0.2A 2ns 2-Pin DO-35 Bag |
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1N4151/TR | Microchip Technology |
Description: DIODE GEN PURP 75V 200MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 2 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 50 nA @ 50 V |
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1N4151/TR | Microchip Technology |
Diodes - General Purpose, Power, Switching Signal or Computer Diode |
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| 1N4151M | DC COMPONENTS |
Category: THT universal diodes Description: Diode: switching; THT; 75V; 0.15A; reel,tape; Ifsm: 0.5A; DO34; 2ns Type of diode: switching Mounting: THT Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 2ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: DO34 Max. forward voltage: 1V Max. forward impulse current: 0.5A Kind of package: reel; tape |
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| 1N4151M | DC COMPONENTS |
Category: THT universal diodes Description: Diode: switching; THT; 75V; 0.15A; reel,tape; Ifsm: 0.5A; DO34; 2ns Type of diode: switching Mounting: THT Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 2ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: DO34 Max. forward voltage: 1V Max. forward impulse current: 0.5A Kind of package: reel; tape кількість в упаковці: 1 шт |
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| 1N4151TAP | VISHAY |
Category: THT universal diodes Description: Diode: switching; THT; 75V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; Ir: 50uA Type of diode: switching Mounting: THT Max. off-state voltage: 75V Load current: 0.15A Max. load current: 0.5A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 2pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.44W Kind of package: Ammo Pack |
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| 1N4151TAP | VISHAY |
Category: THT universal diodes Description: Diode: switching; THT; 75V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; Ir: 50uA Type of diode: switching Mounting: THT Max. off-state voltage: 75V Load current: 0.15A Max. load current: 0.5A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 2pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.44W Kind of package: Ammo Pack кількість в упаковці: 1 шт |
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| 1N4151TR | VISHAY |
Category: THT universal diodes Description: Diode: switching; THT; 75V; 0.15A; reel,tape; Ifsm: 2A; DO35; Ir: 50uA Type of diode: switching Mounting: THT Max. off-state voltage: 75V Load current: 0.15A Max. load current: 0.5A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 2pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.44W Kind of package: reel; tape |
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1N4151TR | onsemi |
Description: DIODE GEN PURP 75V 150MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 50 nA @ 50 V |
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1N4151W-E3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 75V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 500mA Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 1.5pF Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 0.5A Leakage current: 50µA Power dissipation: 0.28W Kind of package: reel; tape |
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1N4151W-E3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 75V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 500mA Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 1.5pF Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 0.5A Leakage current: 50µA Power dissipation: 0.28W Kind of package: reel; tape кількість в упаковці: 25 шт |
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1N4151W-E3-08 | Vishay |
Rectifier Diode Small Signal Switching 75V 0.15A 4ns 2-Pin SOD-123 T/R |
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1N4151W-E3-08 | Vishay |
Diode Small Signal Switching 75V 0.3A 2-Pin SOD-123 T/R |
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1N4151W-E3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 150MA SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 50 nA @ 50 V |
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1N4151W-E3-18 | Vishay |
Diode Small Signal Switching 75V 0.3A 2-Pin SOD-123 T/R |
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1N4151W-E3-18 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 75 Volt 500mA 2ns |
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1N4151W-G3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 150MA SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 50 nA @ 50 V |
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| 1N4151W-G3-08 | Vishay |
Diode Small Signal Switching 75V 0.15A 2-Pin SOD-123 T/R |
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1N4151W-G3-08 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 75 Volt 500mA 2ns |
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1N4151W-G3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 150MA SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 50 nA @ 50 V |
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1N4151W-G3-18 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 75 Volt 500mA 2ns |
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1N4151W-HE3-08 | Vishay |
Diode Small Signal Switching 75V 0.15A Automotive AEC-Q101 2-Pin SOD-123 T/R |
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1N4151W-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 150MA SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 50 nA @ 50 V Grade: Automotive Qualification: AEC-Q101 |
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1N4151W-HE3-08 | Vishay |
Diode Small Signal Switching 75V 0.15A Automotive 2-Pin SOD-123 T/R |
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1N4151W-HE3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 150MA SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 50 nA @ 50 V Qualification: AEC-Q101 |
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1N4151W-HE3-18 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 75 Volt 500mA 2ns |
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| 1N4151W-HE3-A-08 | Vishay | Diodes - General Purpose, Power, Switching SWITCHING DIODE SOD123 |
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| 1N4151W-HE3-A-18 | Vishay | Diodes - General Purpose, Power, Switching SWITCHING DIODE SOD123 |
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1N4151W-HE3_A-08 | Vishay |
Description: SWITCHING DIODE GENPURP SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 50 nA @ 50 V Qualification: AEC-Q101 |
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1N4151W-HE3_A-18 | Vishay |
Description: SWITCHING DIODE GENPURP SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 50 nA @ 50 V Qualification: AEC-Q101 |
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1N4151W-HE3_A-18 | Vishay Semiconductors |
Diodes - General Purpose, Power, Switching SWITCHING DIODE GENPURP SOD123 |
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1N4151WS-E3-08 | Vishay |
Rectifier Diode Small Signal Switching 75V 0.15A 4ns 2-Pin SOD-323 T/R |
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1N4151WS-E3-18 | Vishay |
Diode Small Signal Switching 75V 0.15A 2-Pin SOD-323 T/R |
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1N4151WS-E3-18 | Vishay |
Diode Small Signal Switching 75V 0.15A 2-Pin SOD-323 T/R |
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1N4151WS-G3-08 | Vishay |
Diode Small Signal Switching 75V 0.15A 2-Pin SOD-323 T/R |
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1N4151WS-G3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 150MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 50 nA @ 50 V |
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1N4151WS-G3-08 | Vishay |
Diode Small Signal Switching 75V 0.15A 2-Pin SOD-323 T/R |
товар відсутній |
| LL4151 |
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Виробник: LGE
0,3A; 50V; packaging: tape&reel diode 1N4151 SOD80 MiniMELF LGE DI1N4151 LGE
кількість в упаковці: 2500 шт
0,3A; 50V; packaging: tape&reel diode 1N4151 SOD80 MiniMELF LGE DI1N4151 LGE
кількість в упаковці: 2500 шт
на замовлення 5000 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 1.01 грн |
| 1N4151 Код товару: 173219 |
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товар відсутній
| 1N4151 |
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Виробник: Microchip Technology
Description: DIODE GEN PURP 75V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 2 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Description: DIODE GEN PURP 75V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 2 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
товар відсутній
| 1N4151 |
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Виробник: Diotec Semiconductor
Diode Small Signal Switching 75V 0.2A 2-Pin DO-35 Ammo
Diode Small Signal Switching 75V 0.2A 2-Pin DO-35 Ammo
товар відсутній
| 1N4151 |
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Виробник: onsemi / Fairchild
Diodes - General Purpose, Power, Switching High Conductance Ultra Fast
Diodes - General Purpose, Power, Switching High Conductance Ultra Fast
товар відсутній
| 1N4151 |
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Виробник: Microchip Technology
Rectifier Diode Switching 75V 0.2A 2ns 2-Pin DO-35 Bag
Rectifier Diode Switching 75V 0.2A 2ns 2-Pin DO-35 Bag
товар відсутній
| 1N4151 |
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Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 50V 0.2A DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Description: DIODE GEN PURP 50V 0.2A DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
товар відсутній
| 1N4151 |
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Виробник: onsemi
Description: SMALL SIGNAL DIODE DO35 75V 175C
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Description: SMALL SIGNAL DIODE DO35 75V 175C
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
товар відсутній
| 1N4151 |
|
Виробник: Diotec Semiconductor
Diode Small Signal Switching 75V 0.2A 2-Pin DO-35 Ammo
Diode Small Signal Switching 75V 0.2A 2-Pin DO-35 Ammo
товар відсутній
| 1N4151 |
|
Виробник: ON Semiconductor
Rectifier Diode Small Signal Switching 75V 0.15A 4ns 2-Pin DO-35 Bulk
Rectifier Diode Small Signal Switching 75V 0.15A 4ns 2-Pin DO-35 Bulk
товар відсутній
| 1N4151 |
|
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 50V 0.2A DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Description: DIODE GEN PURP 50V 0.2A DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
товар відсутній
| 1N4151 |
|
Виробник: Microchip Technology
Rectifier Diode Switching 75V 0.2A 2ns 2-Pin DO-35 Bag
Rectifier Diode Switching 75V 0.2A 2ns 2-Pin DO-35 Bag
товар відсутній
| 1N4151 |
|
Виробник: Microchip Technology
Diodes - General Purpose, Power, Switching Signal or Computer Diode
Diodes - General Purpose, Power, Switching Signal or Computer Diode
товар відсутній
| 1N4151-F |
|
Виробник: Rectron
Diodes - General Purpose, Power, Switching DO-35gls,0.3A,75V,Switching,Tape&ammo
Diodes - General Purpose, Power, Switching DO-35gls,0.3A,75V,Switching,Tape&ammo
товар відсутній
| 1N4151-T |
|
Виробник: Rectron
Diodes - General Purpose, Power, Switching Vr/75V Io/150mA T/R
Diodes - General Purpose, Power, Switching Vr/75V Io/150mA T/R
товар відсутній
| 1N4151/TR |
|
Виробник: Microchip Technology
Rectifier Diode Switching 75V 0.2A 2ns 2-Pin DO-35 Bag
Rectifier Diode Switching 75V 0.2A 2ns 2-Pin DO-35 Bag
товар відсутній
| 1N4151/TR |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 75V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 2 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Description: DIODE GEN PURP 75V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 2 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
товар відсутній
| 1N4151/TR |
|
Виробник: Microchip Technology
Diodes - General Purpose, Power, Switching Signal or Computer Diode
Diodes - General Purpose, Power, Switching Signal or Computer Diode
товар відсутній
| 1N4151M |
|
Виробник: DC COMPONENTS
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 0.15A; reel,tape; Ifsm: 0.5A; DO34; 2ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 2ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: DO34
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 0.15A; reel,tape; Ifsm: 0.5A; DO34; 2ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 2ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: DO34
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
товар відсутній
| 1N4151M |
|
Виробник: DC COMPONENTS
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 0.15A; reel,tape; Ifsm: 0.5A; DO34; 2ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 2ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: DO34
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 0.15A; reel,tape; Ifsm: 0.5A; DO34; 2ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 2ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: DO34
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| 1N4151TAP |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 75V
Load current: 0.15A
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.44W
Kind of package: Ammo Pack
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 75V
Load current: 0.15A
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.44W
Kind of package: Ammo Pack
товар відсутній
| 1N4151TAP |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 75V
Load current: 0.15A
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.44W
Kind of package: Ammo Pack
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 75V
Load current: 0.15A
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.44W
Kind of package: Ammo Pack
кількість в упаковці: 1 шт
товар відсутній
| 1N4151TR |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 0.15A; reel,tape; Ifsm: 2A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 75V
Load current: 0.15A
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.44W
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 0.15A; reel,tape; Ifsm: 2A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 75V
Load current: 0.15A
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.44W
Kind of package: reel; tape
товар відсутній
| 1N4151TR |
|
Виробник: onsemi
Description: DIODE GEN PURP 75V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Description: DIODE GEN PURP 75V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
товар відсутній
| 1N4151W-E3-08 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 500mA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.28W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 500mA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.28W
Kind of package: reel; tape
товар відсутній
| 1N4151W-E3-08 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 500mA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.28W
Kind of package: reel; tape
кількість в упаковці: 25 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 500mA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.28W
Kind of package: reel; tape
кількість в упаковці: 25 шт
товар відсутній
| 1N4151W-E3-08 |
|
Виробник: Vishay
Rectifier Diode Small Signal Switching 75V 0.15A 4ns 2-Pin SOD-123 T/R
Rectifier Diode Small Signal Switching 75V 0.15A 4ns 2-Pin SOD-123 T/R
товар відсутній
| 1N4151W-E3-08 |
|
Виробник: Vishay
Diode Small Signal Switching 75V 0.3A 2-Pin SOD-123 T/R
Diode Small Signal Switching 75V 0.3A 2-Pin SOD-123 T/R
товар відсутній
| 1N4151W-E3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Description: DIODE GEN PURP 50V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
товар відсутній
| 1N4151W-E3-18 |
|
Виробник: Vishay
Diode Small Signal Switching 75V 0.3A 2-Pin SOD-123 T/R
Diode Small Signal Switching 75V 0.3A 2-Pin SOD-123 T/R
товар відсутній
| 1N4151W-E3-18 |
Виробник: Vishay Semiconductors
Diodes - General Purpose, Power, Switching 75 Volt 500mA 2ns
Diodes - General Purpose, Power, Switching 75 Volt 500mA 2ns
товар відсутній
| 1N4151W-G3-08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Description: DIODE GEN PURP 50V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
товар відсутній
| 1N4151W-G3-08 |
|
Виробник: Vishay
Diode Small Signal Switching 75V 0.15A 2-Pin SOD-123 T/R
Diode Small Signal Switching 75V 0.15A 2-Pin SOD-123 T/R
товар відсутній
| 1N4151W-G3-08 |
Виробник: Vishay Semiconductors
Diodes - General Purpose, Power, Switching 75 Volt 500mA 2ns
Diodes - General Purpose, Power, Switching 75 Volt 500mA 2ns
товар відсутній
| 1N4151W-G3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Description: DIODE GEN PURP 50V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
товар відсутній
| 1N4151W-G3-18 |
Виробник: Vishay Semiconductors
Diodes - General Purpose, Power, Switching 75 Volt 500mA 2ns
Diodes - General Purpose, Power, Switching 75 Volt 500mA 2ns
товар відсутній
| 1N4151W-HE3-08 |
|
Виробник: Vishay
Diode Small Signal Switching 75V 0.15A Automotive AEC-Q101 2-Pin SOD-123 T/R
Diode Small Signal Switching 75V 0.15A Automotive AEC-Q101 2-Pin SOD-123 T/R
товар відсутній
| 1N4151W-HE3-08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 50V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| 1N4151W-HE3-08 |
|
Виробник: Vishay
Diode Small Signal Switching 75V 0.15A Automotive 2-Pin SOD-123 T/R
Diode Small Signal Switching 75V 0.15A Automotive 2-Pin SOD-123 T/R
товар відсутній
| 1N4151W-HE3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 50V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Qualification: AEC-Q101
товар відсутній
| 1N4151W-HE3-18 |
Виробник: Vishay Semiconductors
Diodes - General Purpose, Power, Switching 75 Volt 500mA 2ns
Diodes - General Purpose, Power, Switching 75 Volt 500mA 2ns
товар відсутній
| 1N4151W-HE3-A-08 |
Виробник: Vishay
Diodes - General Purpose, Power, Switching SWITCHING DIODE SOD123
Diodes - General Purpose, Power, Switching SWITCHING DIODE SOD123
товар відсутній
| 1N4151W-HE3-A-18 |
Виробник: Vishay
Diodes - General Purpose, Power, Switching SWITCHING DIODE SOD123
Diodes - General Purpose, Power, Switching SWITCHING DIODE SOD123
товар відсутній
| 1N4151W-HE3_A-08 |
|
Виробник: Vishay
Description: SWITCHING DIODE GENPURP SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Qualification: AEC-Q101
Description: SWITCHING DIODE GENPURP SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Qualification: AEC-Q101
товар відсутній
| 1N4151W-HE3_A-18 |
|
Виробник: Vishay
Description: SWITCHING DIODE GENPURP SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Qualification: AEC-Q101
Description: SWITCHING DIODE GENPURP SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Qualification: AEC-Q101
товар відсутній
| 1N4151W-HE3_A-18 |
|
Виробник: Vishay Semiconductors
Diodes - General Purpose, Power, Switching SWITCHING DIODE GENPURP SOD123
Diodes - General Purpose, Power, Switching SWITCHING DIODE GENPURP SOD123
товар відсутній
| 1N4151WS-E3-08 |
|
Виробник: Vishay
Rectifier Diode Small Signal Switching 75V 0.15A 4ns 2-Pin SOD-323 T/R
Rectifier Diode Small Signal Switching 75V 0.15A 4ns 2-Pin SOD-323 T/R
товар відсутній
| 1N4151WS-E3-18 |
|
Виробник: Vishay
Diode Small Signal Switching 75V 0.15A 2-Pin SOD-323 T/R
Diode Small Signal Switching 75V 0.15A 2-Pin SOD-323 T/R
товар відсутній
| 1N4151WS-E3-18 |
|
Виробник: Vishay
Diode Small Signal Switching 75V 0.15A 2-Pin SOD-323 T/R
Diode Small Signal Switching 75V 0.15A 2-Pin SOD-323 T/R
товар відсутній
| 1N4151WS-G3-08 |
|
Виробник: Vishay
Diode Small Signal Switching 75V 0.15A 2-Pin SOD-323 T/R
Diode Small Signal Switching 75V 0.15A 2-Pin SOD-323 T/R
товар відсутній
| 1N4151WS-G3-08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Description: DIODE GEN PURP 50V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
товар відсутній
| 1N4151WS-G3-08 |
|
Виробник: Vishay
Diode Small Signal Switching 75V 0.15A 2-Pin SOD-323 T/R
Diode Small Signal Switching 75V 0.15A 2-Pin SOD-323 T/R
товар відсутній