Результат пошуку "1n4935" : > 120

Обрати Сторінку:    << Попередня Сторінка ]  1 2 3  Наступна Сторінка >> ]
Вид перегляду :
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
1N4935 1N4935 onsemi 1n4933-d.pdf Description: DIODE FAST DO41 200V 200NS 150C
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935 1N4935 ON Semiconductor 1n4933-d.pdf Diode Switching 200V 1A 2-Pin DO-41 T/R
товар відсутній
1N4935 Diotec Semiconductor 1n4933.pdf Description: DIODE GEN PURP 200V 1A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935 1N4935 ON Semiconductor 1n4933-d.pdf Rectifier Diode Switching 200V 1A 300ns 2-Pin DO-41 T/R
товар відсутній
1N4935 1N4935 Taiwan Semiconductor 1n4933.pdf 1n4933-d.pdf Rectifiers Vr/200V Io/1A T/R
товар відсутній
1N4935 R0 1N4935 R0 Taiwan Semiconductor 12611313940083281n493320series_f13.pdf Diode Switching 200V 1A 2-Pin DO-41 T/R
товар відсутній
1N4935 R0 1N4935 R0 Taiwan Semiconductor Rectifiers 1A,200V,200NS,SILAST,FAST RECTIFIER
товар відсутній
1N4935 R0G 1N4935 R0G Taiwan Semiconductor Rectifiers 1A,200V,200NS FAST RECTIFIER
товар відсутній
1N4935 R0G 1N4935 R0G Taiwan Semiconductor 12611313940083281n493320series_f13.pdf Diode Switching 200V 1A 2-Pin DO-41 T/R
товар відсутній
1N4935-AP 1N4935-AP Micro Commercial Co 1N4933-1N4937%28DO-41%29.pdf Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935-E3/54 1N4935-E3/54 Vishay 1n4933.pdf Diode Switching 200V 1A 2-Pin DO-41 T/R
товар відсутній
1N4935-E3/73 1N4935-E3/73 Vishay General Semiconductor - Diodes Division 1n4933.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935-E3/73 1N4935-E3/73 Vishay 1n4933.pdf Diode Switching 200V 1A 2-Pin DO-41 Ammo
товар відсутній
1N4935-E3/73 1N4935-E3/73 Vishay General Semiconductor - Diodes Division 1n4933.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935-T 1N4935-T Rectron ds26002.pdf Rectifiers DO 41 1A 200V 200ns
товар відсутній
1N4935-T 1N4935-T Rectron 1n4933-4937.pdf Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 T/R
товар відсутній
1N4935-T 1N4935-T Diodes Inc ds26002.pdf Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 T/R
товар відсутній
1N4935-TP 1N4935-TP Micro Commercial Co 1N4933-1N4937%28DO-41%29.pdf Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G 1N4935G ON Semiconductor 1n4933-d.pdf Diode Switching 200V 1A 2-Pin DO-41 Bag
товар відсутній
1N4935G 1N4935G Taiwan Semiconductor Corporation 1N4933G SERIES_I2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G 1N4935G Taiwan Semiconductor 1n4933-d.pdf 1N4933G SERIES_I2104.pdf Rectifiers 200ns, 1A, 200V, Fast Recovery Rectifier
товар відсутній
1N4935G 1N4935G ON Semiconductor 1n4933-d.pdf Diode Switching 200V 1A 2-Pin DO-41 Bag
товар відсутній
1N4935G 1N4935G ON Semiconductor 1n4933-d.pdf Rectifier Diode Switching 200V 1A 300ns 2-Pin DO-41 Bag
товар відсутній
1N4935G A0G 1N4935G A0G Taiwan Semiconductor Corporation 1N4933G%20SERIES_I2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G B0G 1N4935G B0G Taiwan Semiconductor Corporation 1N4933G%20SERIES_I2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G R0 1N4935G R0 Taiwan Semiconductor 1n4933g20series_f13.pdf Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41
товар відсутній
1N4935G R0G 1N4935G R0G Taiwan Semiconductor 1n4933gseries_i2104.pdf Diode Switching 200V 1A 2-Pin DO-41 T/R
товар відсутній
1N4935G R0G 1N4935G R0G Taiwan Semiconductor 4981n4933g20series_f13.pdf Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41
товар відсутній
1N4935G R0G 1N4935G R0G Taiwan Semiconductor Corporation 1N4933G%20SERIES_I2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G R1G 1N4935G R1G Taiwan Semiconductor Corporation 1N4933G%20SERIES_I2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G-B 1N4935G-B Rectron rect_s_a0002848374_1-2281424.pdf Rectifiers Vr/200V Io/1A BULK
товар відсутній
1N4935G-K 1N4935G-K Taiwan Semiconductor Corporation 1N4933G-K SERIES_B2104.pdf Description: 200NS, 1A, 200V, FAST RECOVERY R
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G-K 1N4935G-K Taiwan Semiconductor 1N4933G-K SERIES_B2104.pdf Rectifiers 200ns, 1A, 200V, Fast Recovery Rectifier
товар відсутній
1N4935G-K A0G 1N4935G-K A0G Taiwan Semiconductor 1n4933g-k20series_b2104.pdf Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 Ammo
товар відсутній
1N4935G-K A0G 1N4935G-K A0G Taiwan Semiconductor Rectifiers 200ns, 1A, 200V, Fast Recovery Rectifier
товар відсутній
1N4935G-T 1N4935G-T Diodes Incorporated ds27002.pdf Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G-T 1N4935G-T Rectron rect_s_a0002848374_1-2281424.pdf Rectifiers DO 41 1A 200V 200ns GP
товар відсутній
1N4935G-T 1N4935G-T Rectron 1n4933g-4937g.pdf Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 T/R
товар відсутній
1N4935G-T 1N4935G-T Diodes Inc ds27002.pdf Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 T/R
товар відсутній
1N4935GH 1N4935GH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
1N4935GH 1N4935GH Taiwan Semiconductor Rectifiers 200ns, 1A, 200V, Fast Recovery Rectifier
товар відсутній
1N4935GHA0G 1N4935GHA0G Taiwan Semiconductor Corporation 1N4933G%20SERIES_I2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
1N4935GHB0G 1N4935GHB0G Taiwan Semiconductor Corporation 1N4933G%20SERIES_I2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1N4935GHR0G 1N4935GHR0G Taiwan Semiconductor Corporation 1N4933G%20SERIES_I2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
1N4935GHR0G 1N4935GHR0G Taiwan Semiconductor 1n4933gseries_i2104.pdf Rectifier Diode Switching 200V 1A 200ns Automotive 2-Pin DO-41 T/R
товар відсутній
1N4935GHR1G 1N4935GHR1G Taiwan Semiconductor Corporation 1N4933G%20SERIES_I2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1N4935GL-T 1N4935GL-T Diodes Incorporated ds27002.pdf Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP 1N4935GP onsemi 1N4933GP - 37GP.pdf Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP-AP 1N4935GP-AP Micro Commercial Co 1N4933GP-1N4937GP(DO-41).pdf Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP-BP 1N4935GP-BP Micro Commercial Components 1n4933gp-1n4937gpdo-41.pdf Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 Bulk
товар відсутній
1N4935GP-BP 1N4935GP-BP Micro Commercial Co 1N4933GP-1N4937GP(DO-41).pdf Description: Interface
Packaging: Bulk
Part Status: Active
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP-BP Micro Commercial Components (MCC) 1N4933GP-1N4937GP(DO-41).pdf Rectifiers Fast Recovery Rectifiers
товар відсутній
1N4935GP-E3/54 1N4935GP-E3/54 Vishay 1n4933gp.pdf Diode Switching 200V 1A 2-Pin DO-41 T/R
товар відсутній
1N4935GP-E3/54 1N4935GP-E3/54 Vishay General Semiconductor - Diodes Division 1n4933gp.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP-E3/54 1N4935GP-E3/54 Vishay 1n4933gp.pdf Diode Switching 200V 1A 2-Pin DO-41 T/R
товар відсутній
1N4935GP-E3/73 1N4935GP-E3/73 Vishay 1n4933gp.pdf Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 Ammo
товар відсутній
1N4935GP-E3/73 1N4935GP-E3/73 Vishay General Semiconductor - Diodes Division 1n4933gp.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP-E3/73 1N4935GP-E3/73 Vishay General Semiconductor 1n4933gp.pdf Rectifiers 1.0 Amp 200 Volt Glass Passivated
товар відсутній
1N4935GP-M3/54 1N4935GP-M3/54 Vishay General Semiconductor - Diodes Division 1n4933gp.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP-M3/73 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
товар відсутній
1N4935 1n4933-d.pdf
1N4935
Виробник: onsemi
Description: DIODE FAST DO41 200V 200NS 150C
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935 1n4933-d.pdf
1N4935
Виробник: ON Semiconductor
Diode Switching 200V 1A 2-Pin DO-41 T/R
товар відсутній
1N4935 1n4933.pdf
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 200V 1A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935 1n4933-d.pdf
1N4935
Виробник: ON Semiconductor
Rectifier Diode Switching 200V 1A 300ns 2-Pin DO-41 T/R
товар відсутній
1N4935 1n4933.pdf 1n4933-d.pdf
1N4935
Виробник: Taiwan Semiconductor
Rectifiers Vr/200V Io/1A T/R
товар відсутній
1N4935 R0 12611313940083281n493320series_f13.pdf
1N4935 R0
Виробник: Taiwan Semiconductor
Diode Switching 200V 1A 2-Pin DO-41 T/R
товар відсутній
1N4935 R0
1N4935 R0
Виробник: Taiwan Semiconductor
Rectifiers 1A,200V,200NS,SILAST,FAST RECTIFIER
товар відсутній
1N4935 R0G
1N4935 R0G
Виробник: Taiwan Semiconductor
Rectifiers 1A,200V,200NS FAST RECTIFIER
товар відсутній
1N4935 R0G 12611313940083281n493320series_f13.pdf
1N4935 R0G
Виробник: Taiwan Semiconductor
Diode Switching 200V 1A 2-Pin DO-41 T/R
товар відсутній
1N4935-AP 1N4933-1N4937%28DO-41%29.pdf
1N4935-AP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935-E3/54 1n4933.pdf
1N4935-E3/54
Виробник: Vishay
Diode Switching 200V 1A 2-Pin DO-41 T/R
товар відсутній
1N4935-E3/73 1n4933.pdf
1N4935-E3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935-E3/73 1n4933.pdf
1N4935-E3/73
Виробник: Vishay
Diode Switching 200V 1A 2-Pin DO-41 Ammo
товар відсутній
1N4935-E3/73 1n4933.pdf
1N4935-E3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935-T ds26002.pdf
1N4935-T
Виробник: Rectron
Rectifiers DO 41 1A 200V 200ns
товар відсутній
1N4935-T 1n4933-4937.pdf
1N4935-T
Виробник: Rectron
Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 T/R
товар відсутній
1N4935-T ds26002.pdf
1N4935-T
Виробник: Diodes Inc
Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 T/R
товар відсутній
1N4935-TP 1N4933-1N4937%28DO-41%29.pdf
1N4935-TP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G 1n4933-d.pdf
1N4935G
Виробник: ON Semiconductor
Diode Switching 200V 1A 2-Pin DO-41 Bag
товар відсутній
1N4935G 1N4933G SERIES_I2104.pdf
1N4935G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G 1n4933-d.pdf 1N4933G SERIES_I2104.pdf
1N4935G
Виробник: Taiwan Semiconductor
Rectifiers 200ns, 1A, 200V, Fast Recovery Rectifier
товар відсутній
1N4935G 1n4933-d.pdf
1N4935G
Виробник: ON Semiconductor
Diode Switching 200V 1A 2-Pin DO-41 Bag
товар відсутній
1N4935G 1n4933-d.pdf
1N4935G
Виробник: ON Semiconductor
Rectifier Diode Switching 200V 1A 300ns 2-Pin DO-41 Bag
товар відсутній
1N4935G A0G 1N4933G%20SERIES_I2104.pdf
1N4935G A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G B0G 1N4933G%20SERIES_I2104.pdf
1N4935G B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G R0 1n4933g20series_f13.pdf
1N4935G R0
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41
товар відсутній
1N4935G R0G 1n4933gseries_i2104.pdf
1N4935G R0G
Виробник: Taiwan Semiconductor
Diode Switching 200V 1A 2-Pin DO-41 T/R
товар відсутній
1N4935G R0G 4981n4933g20series_f13.pdf
1N4935G R0G
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41
товар відсутній
1N4935G R0G 1N4933G%20SERIES_I2104.pdf
1N4935G R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G R1G 1N4933G%20SERIES_I2104.pdf
1N4935G R1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G-B rect_s_a0002848374_1-2281424.pdf
1N4935G-B
Виробник: Rectron
Rectifiers Vr/200V Io/1A BULK
товар відсутній
1N4935G-K 1N4933G-K SERIES_B2104.pdf
1N4935G-K
Виробник: Taiwan Semiconductor Corporation
Description: 200NS, 1A, 200V, FAST RECOVERY R
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G-K 1N4933G-K SERIES_B2104.pdf
1N4935G-K
Виробник: Taiwan Semiconductor
Rectifiers 200ns, 1A, 200V, Fast Recovery Rectifier
товар відсутній
1N4935G-K A0G 1n4933g-k20series_b2104.pdf
1N4935G-K A0G
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 Ammo
товар відсутній
1N4935G-K A0G
1N4935G-K A0G
Виробник: Taiwan Semiconductor
Rectifiers 200ns, 1A, 200V, Fast Recovery Rectifier
товар відсутній
1N4935G-T ds27002.pdf
1N4935G-T
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G-T rect_s_a0002848374_1-2281424.pdf
1N4935G-T
Виробник: Rectron
Rectifiers DO 41 1A 200V 200ns GP
товар відсутній
1N4935G-T 1n4933g-4937g.pdf
1N4935G-T
Виробник: Rectron
Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 T/R
товар відсутній
1N4935G-T ds27002.pdf
1N4935G-T
Виробник: Diodes Inc
Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 T/R
товар відсутній
1N4935GH
1N4935GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
1N4935GH
1N4935GH
Виробник: Taiwan Semiconductor
Rectifiers 200ns, 1A, 200V, Fast Recovery Rectifier
товар відсутній
1N4935GHA0G 1N4933G%20SERIES_I2104.pdf
1N4935GHA0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
1N4935GHB0G 1N4933G%20SERIES_I2104.pdf
1N4935GHB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1N4935GHR0G 1N4933G%20SERIES_I2104.pdf
1N4935GHR0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
1N4935GHR0G 1n4933gseries_i2104.pdf
1N4935GHR0G
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 200V 1A 200ns Automotive 2-Pin DO-41 T/R
товар відсутній
1N4935GHR1G 1N4933G%20SERIES_I2104.pdf
1N4935GHR1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1N4935GL-T ds27002.pdf
1N4935GL-T
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP 1N4933GP - 37GP.pdf
1N4935GP
Виробник: onsemi
Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP-AP 1N4933GP-1N4937GP(DO-41).pdf
1N4935GP-AP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP-BP 1n4933gp-1n4937gpdo-41.pdf
1N4935GP-BP
Виробник: Micro Commercial Components
Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 Bulk
товар відсутній
1N4935GP-BP 1N4933GP-1N4937GP(DO-41).pdf
1N4935GP-BP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Part Status: Active
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP-BP 1N4933GP-1N4937GP(DO-41).pdf
Виробник: Micro Commercial Components (MCC)
Rectifiers Fast Recovery Rectifiers
товар відсутній
1N4935GP-E3/54 1n4933gp.pdf
1N4935GP-E3/54
Виробник: Vishay
Diode Switching 200V 1A 2-Pin DO-41 T/R
товар відсутній
1N4935GP-E3/54 1n4933gp.pdf
1N4935GP-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP-E3/54 1n4933gp.pdf
1N4935GP-E3/54
Виробник: Vishay
Diode Switching 200V 1A 2-Pin DO-41 T/R
товар відсутній
1N4935GP-E3/73 1n4933gp.pdf
1N4935GP-E3/73
Виробник: Vishay
Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 Ammo
товар відсутній
1N4935GP-E3/73 1n4933gp.pdf
1N4935GP-E3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP-E3/73 1n4933gp.pdf
1N4935GP-E3/73
Виробник: Vishay General Semiconductor
Rectifiers 1.0 Amp 200 Volt Glass Passivated
товар відсутній
1N4935GP-M3/54 1n4933gp.pdf
1N4935GP-M3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP-M3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
товар відсутній
Обрати Сторінку:    << Попередня Сторінка ]  1 2 3  Наступна Сторінка >> ]