Результат пошуку "25q80" : > 120
Вид перегляду :
Мінімальне замовлення: 30
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| MIG25Q804H | TOS | MODULE |
на замовлення 59 шт: термін постачання 14-28 дні (днів) |
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| MIG25Q804H(806H) | TOSHIBA | 07+; |
на замовлення 1000 шт: термін постачання 14-28 дні (днів) |
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| MIG25Q806H | TOS | MODULE |
на замовлення 237 шт: термін постачання 14-28 дні (днів) |
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| MIG25Q806H | TOSHIBA |
на замовлення 100 шт: термін постачання 14-28 дні (днів) |
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| MIG25Q806H | TOSHIBA | 25A/1200V/IPM/6U |
на замовлення 60 шт: термін постачання 14-28 дні (днів) |
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| MIG25Q806H | module |
на замовлення 2100 шт: термін постачання 14-28 дні (днів) |
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| MIG25Q806H | TOSHIBA | CDH6-3 |
на замовлення 19 шт: термін постачання 14-28 дні (днів) |
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| W25Q80 |
на замовлення 100 шт: термін постачання 14-28 дні (днів) |
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| W25Q80BLUXIG | Winbond |
на замовлення 1 шт: термін постачання 5 дні (днів) |
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| W25Q80BLZPIG |
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на замовлення 600 шт: термін постачання 14-28 дні (днів) |
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| W25Q80BV |
на замовлення 100000 шт: термін постачання 14-28 дні (днів) |
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| W25Q80BVSIG | WINBOND |
на замовлення 10000 шт: термін постачання 14-28 дні (днів) |
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| W25Q80BVSNIG |
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на замовлення 4940 шт: термін постачання 14-28 дні (днів) |
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| ZB25VQ80ASIG | ZBIT |
Serial FLASH, Dual/Quad SPI Int. 8Mbit (1M x 8-bit), 104MHz, 2.3?3.6V, -40?85°C Replacement for: W25Q80JVSSIQ ZB25VQ80ASIG PEF25vq80asig кількість в упаковці: 30 шт |
на замовлення 29 шт: термін постачання 28-31 дні (днів) |
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GD25Q80CTIGR Код товару: 184620 |
Мікросхеми > Пам'ять |
товар відсутній
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W25Q80DVSNIG Код товару: 149587 |
Мікросхеми > Інші мікросхеми |
товар відсутній
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W25Q80DVSSIG Код товару: 124111 |
Мікросхеми > Інші мікросхеми |
товар відсутній
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W25X80AVZPIG (W25Q80AVZPIG) (микросхема) Код товару: 49634 |
Різні комплектуючі > Різні комплектуючі 3 |
товар відсутній
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BY25Q80AWSIG(R) | BYTe Semiconductor |
Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 1M x 8 |
товар відсутній |
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BY25Q80AWSIG(T) | BYTe Semiconductor |
Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 1M x 8 |
товар відсутній |
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BY25Q80AWTIG(R) | BYTe Semiconductor |
Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 1M x 8 |
товар відсутній |
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BY25Q80AWTIG(R) | BYTe Semiconductor |
Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 1M x 8 |
товар відсутній |
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BY25Q80AWTIG(T) | BYTe Semiconductor |
Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 1M x 8 |
товар відсутній |
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BY25Q80AWUIG(R) | BYTe Semiconductor |
Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 1M x 8 |
товар відсутній |
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BY25Q80AWXIG(R) | BYTe Semiconductor |
Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 1M x 8 |
товар відсутній |
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BY25Q80AWYIG(R) | BYTe Semiconductor |
Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-USON (1.5x1.5) Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 1M x 8 |
товар відсутній |
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BY25Q80BSMIG(R) | BYTe Semiconductor |
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 1M x 8 |
товар відсутній |
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BY25Q80BSMIG(R) | BYTe Semiconductor |
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 1M x 8 |
товар відсутній |
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BY25Q80BSSIG(R) | BYTe Semiconductor |
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 1M x 8 |
товар відсутній |
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BY25Q80BSSIG(R) | BYTe Semiconductor |
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 1M x 8 |
товар відсутній |
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BY25Q80BSSIG(T) | BYTe Semiconductor |
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 1M x 8 |
товар відсутній |
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BY25Q80BSTIG(R) | BYTe Semiconductor |
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 1M x 8 |
товар відсутній |
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BY25Q80BSTIG(R) | BYTe Semiconductor |
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 1M x 8 |
товар відсутній |
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BY25Q80BSTIG(T) | BYTe Semiconductor |
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 1M x 8 |
товар відсутній |
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BY25Q80BSTJG(R) | BYTe Semiconductor |
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 1M x 8 |
товар відсутній |
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BY25Q80BSTJG(T) | BYTe Semiconductor |
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 1M x 8 |
товар відсутній |
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GD25Q80CNIGR | GigaDevice |
NOR Flash 8Mbit NOR Flash /3.3V /USON8 3*4mm /Industrial(-40? to +85?) /T&R |
товар відсутній |
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GD25Q80CS2GR | GigaDevice |
NOR Flash |
товар відсутній |
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GD25Q80CSIG | GigaDevice |
NOR Flash 8Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /Tube |
товар відсутній |
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GD25Q80CSIG | GigaDevice Semiconductor (HK) Limited |
Description: IC FLASH 8MBIT SPI/QUAD I/O 8SOP Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
товар відсутній |
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GD25Q80CSIGR | GigaDevice |
NOR Flash 8Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /T&R |
товар відсутній |
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GD25Q80CTIG | GigaDevice Semiconductor (HK) Limited |
Description: IC FLASH 8MBIT SPI/QUAD I/O 8SOP Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
товар відсутній |
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GD25Q80CTIG | GigaDevice |
NOR Flash 8Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /Tube |
товар відсутній |
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GD25Q80CTIGR | GigaDevice |
NOR Flash 8Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /T&R |
товар відсутній |
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GD25Q80CWIGR | GigaDevice |
NOR Flash 8Mbit NOR Flash /3.3V /WSON8 6*5mm /Industrial(-40? to +85?) /T&R |
товар відсутній |
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| GD25Q80EEAGR | GigaDevice | NOR Flash |
товар відсутній |
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| GD25Q80EEEGR | GigaDevice | NOR Flash |
товар відсутній |
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GD25Q80ENIGR | GigaDevice |
NOR Flash |
товар відсутній |
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| GD25Q80ENJGR | GigaDevice |
NOR Flash |
товар відсутній |
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| GD25Q80ES2GR | GigaDevice | NOR Flash |
товар відсутній |
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GD25Q80ESIGR | GigaDevice Semiconductor (HK) Limited |
Description: IC FLASH 8MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
товар відсутній |
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| GD25Q80ESJGR | GigaDevice |
NOR Flash |
товар відсутній |
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| GD25Q80ET2GR | GigaDevice | NOR Flash |
товар відсутній |
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| GD25Q80ETAGR | GigaDevice | NOR Flash |
товар відсутній |
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| GD25Q80ETEGR | GigaDevice |
NOR Flash |
товар відсутній |
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| GD25Q80ETJGR | GigaDevice | NOR Flash |
товар відсутній |
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GD25Q80EWIGR | GigaDevice Semiconductor (HK) Limited |
Description: IC FLASH 8MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
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| GD25Q80EWJGR | GigaDevice | NOR Flash |
товар відсутній |
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PRG5025Q-8061-B-T4 | Susumu |
Thin Film Resistors - SMD Thin Film Chip Resistors 2010 size, 2W, 8.06 Kohm, 0.1%, 50ppm |
товар відсутній |
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PRG5025Q-80R6-D-T4 | Susumu |
Thin Film Resistors - SMD Thin Film Chip Resistors 2010 size, 2W, 80.6Kohm, 0.5%, 50ppm |
товар відсутній |
| ZB25VQ80ASIG |
Виробник: ZBIT
Serial FLASH, Dual/Quad SPI Int. 8Mbit (1M x 8-bit), 104MHz, 2.3?3.6V, -40?85°C Replacement for: W25Q80JVSSIQ ZB25VQ80ASIG PEF25vq80asig
кількість в упаковці: 30 шт
Serial FLASH, Dual/Quad SPI Int. 8Mbit (1M x 8-bit), 104MHz, 2.3?3.6V, -40?85°C Replacement for: W25Q80JVSSIQ ZB25VQ80ASIG PEF25vq80asig
кількість в упаковці: 30 шт
на замовлення 29 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна без ПДВ |
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| 30+ | 18.05 грн |
| W25X80AVZPIG (W25Q80AVZPIG) (микросхема) Код товару: 49634 |
товар відсутній
| BY25Q80AWSIG(R) |
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Виробник: BYTe Semiconductor
Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V),
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 1M x 8
Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V),
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 1M x 8
товар відсутній
| BY25Q80AWSIG(T) |
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Виробник: BYTe Semiconductor
Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V),
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 1M x 8
Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V),
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 1M x 8
товар відсутній
| BY25Q80AWTIG(R) |
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Виробник: BYTe Semiconductor
Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V),
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 1M x 8
Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V),
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 1M x 8
товар відсутній
| BY25Q80AWTIG(R) |
|
Виробник: BYTe Semiconductor
Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V),
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 1M x 8
Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V),
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 1M x 8
товар відсутній
| BY25Q80AWTIG(T) |
|
Виробник: BYTe Semiconductor
Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V),
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 1M x 8
Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V),
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 1M x 8
товар відсутній
| BY25Q80AWUIG(R) |
|
Виробник: BYTe Semiconductor
Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V),
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (2x3)
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 1M x 8
Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V),
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (2x3)
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 1M x 8
товар відсутній
| BY25Q80AWXIG(R) |
|
Виробник: BYTe Semiconductor
Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V),
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (2x3)
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 1M x 8
Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V),
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (2x3)
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 1M x 8
товар відсутній
| BY25Q80AWYIG(R) |
|
Виробник: BYTe Semiconductor
Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V),
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (1.5x1.5)
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 1M x 8
Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V),
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (1.5x1.5)
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 1M x 8
товар відсутній
| BY25Q80BSMIG(R) |
|
Виробник: BYTe Semiconductor
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (2x3)
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 7 ns
Memory Organization: 1M x 8
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (2x3)
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 7 ns
Memory Organization: 1M x 8
товар відсутній
| BY25Q80BSMIG(R) |
|
Виробник: BYTe Semiconductor
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (2x3)
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 7 ns
Memory Organization: 1M x 8
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (2x3)
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 7 ns
Memory Organization: 1M x 8
товар відсутній
| BY25Q80BSSIG(R) |
|
Виробник: BYTe Semiconductor
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 7 ns
Memory Organization: 1M x 8
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 7 ns
Memory Organization: 1M x 8
товар відсутній
| BY25Q80BSSIG(R) |
|
Виробник: BYTe Semiconductor
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 7 ns
Memory Organization: 1M x 8
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 7 ns
Memory Organization: 1M x 8
товар відсутній
| BY25Q80BSSIG(T) |
|
Виробник: BYTe Semiconductor
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 7 ns
Memory Organization: 1M x 8
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 7 ns
Memory Organization: 1M x 8
товар відсутній
| BY25Q80BSTIG(R) |
|
Виробник: BYTe Semiconductor
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 7 ns
Memory Organization: 1M x 8
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 7 ns
Memory Organization: 1M x 8
товар відсутній
| BY25Q80BSTIG(R) |
|
Виробник: BYTe Semiconductor
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 7 ns
Memory Organization: 1M x 8
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 7 ns
Memory Organization: 1M x 8
товар відсутній
| BY25Q80BSTIG(T) |
|
Виробник: BYTe Semiconductor
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 7 ns
Memory Organization: 1M x 8
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 7 ns
Memory Organization: 1M x 8
товар відсутній
| BY25Q80BSTJG(R) |
|
Виробник: BYTe Semiconductor
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 60µs, 4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 7 ns
Memory Organization: 1M x 8
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 60µs, 4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 7 ns
Memory Organization: 1M x 8
товар відсутній
| BY25Q80BSTJG(T) |
|
Виробник: BYTe Semiconductor
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 60µs, 4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 7 ns
Memory Organization: 1M x 8
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 60µs, 4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 7 ns
Memory Organization: 1M x 8
товар відсутній
| GD25Q80CNIGR |
|
Виробник: GigaDevice
NOR Flash 8Mbit NOR Flash /3.3V /USON8 3*4mm /Industrial(-40? to +85?) /T&R
NOR Flash 8Mbit NOR Flash /3.3V /USON8 3*4mm /Industrial(-40? to +85?) /T&R
товар відсутній
| GD25Q80CSIG |
|
Виробник: GigaDevice
NOR Flash 8Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /Tube
NOR Flash 8Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /Tube
товар відсутній
| GD25Q80CSIG |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 8MBIT SPI/QUAD I/O 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 8MBIT SPI/QUAD I/O 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
товар відсутній
| GD25Q80CSIGR |
|
Виробник: GigaDevice
NOR Flash 8Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /T&R
NOR Flash 8Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /T&R
товар відсутній
| GD25Q80CTIG |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 8MBIT SPI/QUAD I/O 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 8MBIT SPI/QUAD I/O 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
товар відсутній
| GD25Q80CTIG |
|
Виробник: GigaDevice
NOR Flash 8Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /Tube
NOR Flash 8Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /Tube
товар відсутній
| GD25Q80CTIGR |
|
Виробник: GigaDevice
NOR Flash 8Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /T&R
NOR Flash 8Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /T&R
товар відсутній
| GD25Q80CWIGR |
|
Виробник: GigaDevice
NOR Flash 8Mbit NOR Flash /3.3V /WSON8 6*5mm /Industrial(-40? to +85?) /T&R
NOR Flash 8Mbit NOR Flash /3.3V /WSON8 6*5mm /Industrial(-40? to +85?) /T&R
товар відсутній
| GD25Q80ESIGR |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 8MBIT SPI/QUAD 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Part Status: Active
Write Cycle Time - Word, Page: 70µs, 2ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 8MBIT SPI/QUAD 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Part Status: Active
Write Cycle Time - Word, Page: 70µs, 2ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
товар відсутній
| GD25Q80EWIGR |
|
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 8MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Part Status: Active
Write Cycle Time - Word, Page: 70µs, 2ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 8MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Part Status: Active
Write Cycle Time - Word, Page: 70µs, 2ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
товар відсутній
| PRG5025Q-8061-B-T4 |
|
Виробник: Susumu
Thin Film Resistors - SMD Thin Film Chip Resistors 2010 size, 2W, 8.06 Kohm, 0.1%, 50ppm
Thin Film Resistors - SMD Thin Film Chip Resistors 2010 size, 2W, 8.06 Kohm, 0.1%, 50ppm
товар відсутній
| PRG5025Q-80R6-D-T4 |
|
Виробник: Susumu
Thin Film Resistors - SMD Thin Film Chip Resistors 2010 size, 2W, 80.6Kohm, 0.5%, 50ppm
Thin Film Resistors - SMD Thin Film Chip Resistors 2010 size, 2W, 80.6Kohm, 0.5%, 50ppm
товар відсутній