Результат пошуку "2sk41" : 106

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без ПДВ
2SK41NPE
на замовлення 26000 шт:
термін постачання 14-28 дні (днів)
2SK41NPF
на замовлення 26000 шт:
термін постачання 14-28 дні (днів)
2SK41NPG
на замовлення 26000 шт:
термін постачання 14-28 дні (днів)
2SK28372SK4108
на замовлення 20000 шт:
термін постачання 14-28 дні (днів)
NTE451 NTE451 NTE Electronics nte451.pdf Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 20mA; 0.35W; TO92; Igt: 30mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 20mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: -25V
Mounting: THT
Kind of package: bulk
Gate current: 30mA
на замовлення 52 шт:
термін постачання 21-30 дні (днів)
3+134.91 грн
8+ 102.23 грн
22+ 96.66 грн
Мінімальне замовлення: 3
2SK4103
Код товару: 83547 		Транзистори > Польові N-канальні
товар відсутній
2SK4106
Код товару: 163596 		Транзистори > Польові N-канальні
товар відсутній
2SK4107 (транзистор)
Код товару: 51721 		Транзистори > Польові N-канальні
товар відсутній
2SK4111
Код товару: 162476 		Транзистори > Польові N-канальні
товар відсутній
2SK4115
Код товару: 103452 		Транзистори > Польові N-канальні
товар відсутній
2SK4103(TE16L1,NQ) 2SK4103(TE16L1,NQ) Toshiba 2sk4103_en_wm_20100413.pdf Trans MOSFET N-CH Si 500V 5A 3-Pin(2+Tab) New PW-Mold T/R
товар відсутній
2SK4107(F) 2SK4107(F) Toshiba 2sk4107_en_datasheet_090929.pdf Trans MOSFET N-CH Si 500V 15A 3-Pin(3+Tab) TO-3PN
товар відсутній
2SK4108(F) 2SK4108(F) Toshiba 2sk4108_en_datasheet_090929.pdf Trans MOSFET N-CH Si 500V 20A 3-Pin(3+Tab) TO-3PN
товар відсутній
2SK4115(F) 2SK4115(F) Toshiba 392sk4115_datasheet_en_20131101.pdf.pdf Trans MOSFET N-CH Si 900V 7A 3-Pin(3+Tab) TO-3PN
товар відсутній
2SK4115(F) 2SK4115(F) Toshiba MOSFET
товар відсутній
2SK4116LS 2SK4116LS onsemi 2SK4116LS.pdf Description: MOSFET N-CH 400V 8.9A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V
товар відсутній
2SK4117LS 2SK4117LS onsemi 2SK4117LS.pdf Description: MOSFET N-CH 400V 10.4A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 30 V
товар відсутній
2SK4124 2SK4124 onsemi 869-1070.jpg Description: MOSFET N-CH 500V 20A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товар відсутній
2SK4124-1E 2SK4124-1E onsemi Description: MOSFET N-CH 500V 20A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товар відсутній
2SK4125 2SK4125 onsemi 869-1070.jpg Description: MOSFET N-CH 600V 17A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товар відсутній
2SK4125-1E 2SK4125-1E onsemi Description: MOSFET N-CH 600V 17A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товар відсутній
2SK4125-1E 2SK4125-1E ON Semiconductor 2sk4125-d.pdf Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-3P Tube
товар відсутній
2SK4125-1EX ON Semiconductor 2sk4125-d.pdf Trans MOSFET N-CH 600V 17A
товар відсутній
2SK4125-1EX 2SK4125-1EX onsemi Description: MOSFET N-CH 600V 17A TO3P-3L
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товар відсутній
2SK4126 2SK4126 onsemi 2SK4126.pdf Description: MOSFET N-CH 650V 15A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товар відсутній
2SK4150TZ-E 2SK4150TZ-E Renesas Electronics Corporation 2sk4150-datasheet?language=en Description: MOSFET N-CH 250V 400MA TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 5.7Ohm @ 200mA, 4V
Power Dissipation (Max): 750mW (Ta)
Supplier Device Package: TO-92
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 25 V
товар відсутній
2SK4151TZ-E 2SK4151TZ-E Renesas Electronics Corporation 2sk4151-datasheet?language=en Description: MOSFET N-CH 150V 1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 1.95Ohm @ 500mA, 4V
Power Dissipation (Max): 750mW (Ta)
Supplier Device Package: TO-92
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 98 pF @ 10 V
товар відсутній
2SK4161D Sanken Electric USA Inc. 2sk4161d_ds_en.pdf Description: MOS FET 60V/100A/0.0038
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 10 V
товар відсутній
2SK4161D Sanken Electric Co. 81800598457506622sk4161d_ds_en.pdf N Channel Trench Power Mosfet
товар відсутній
2SK4171 2SK4171 onsemi 2SK4171.pdf Description: MOSFET N-CH 60V 100A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 50A, 10V
Power Dissipation (Max): 1.75W (Ta), 75W (Tc)
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 20 V
товар відсутній
2SK4177-DL-1E 2SK4177-DL-1E ON Semiconductor 51ena0869-d.pdf Trans MOSFET N-CH Si 1.5KV 2A 3-Pin(2+Tab) D2PAK T/R
товар відсутній
2SK4177-DL-1E 2SK4177-DL-1E onsemi ena0869-d.pdf Description: MOSFET N-CH 1500V 2A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 80W (Tc)
Supplier Device Package: TO-263-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
товар відсутній
2SK4177-DL-E ON Semiconductor ena0869.pdf Trans MOSFET N-CH Si 1.5KV 2A 3-Pin(2+Tab) SMP-FD T/R
товар відсутній
2SK4177-DL-E 2SK4177-DL-E onsemi ena0869-d.pdf Description: MOSFET N-CH 1500V 2A SMP-FD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 80W (Tc)
Supplier Device Package: SMP-FD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
товар відсутній
2SK4177-E 2SK4177-E onsemi ena0869-d.pdf Description: MOSFET N-CH 1500V 2A SMP-FD
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SMP-FD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
товар відсутній
2SK4177-E ON Semiconductor ena0869.pdf NCH 4V DRIVE SERIES
товар відсутній
2SK4196LS 2SK4196LS onsemi Description: MOSFET N-CH 500V 5.5A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 2.8A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 30 V
товар відсутній
2SK4196LS-1E 2SK4196LS-1E onsemi Description: MOSFET N-CH 500V 5A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 2.8A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 30 V
товар відсутній
2SK4197FS 2SK4197FS ON Semiconductor 2017ena1368-d.pdf Trans MOSFET N-CH Si 600V 3.3A 3-Pin(3+Tab) TO-220F-3FS Tube
товар відсутній
2SK4197FS 2SK4197FS onsemi Description: MOSFET N-CH 600V 3.3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1.8A, 10V
Power Dissipation (Max): 2W (Ta), 28W (Tc)
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 30 V
товар відсутній
2SK4197LS 2SK4197LS ON Semiconductor ena1223.pdf Trans MOSFET N-CH Si 600V 3.5A 3-Pin(3+Tab) TO-220FI Bag
товар відсутній
2SK4198FS ON Semiconductor 1383ena1370-d.pdf Trans MOSFET N-CH Si 600V 4A 3-Pin(3+Tab) TO-220F-3FS Tube
товар відсутній
2SK4198FS 2SK4198FS ON Semiconductor 1383ena1370-d.pdf Trans MOSFET N-CH Si 600V 4A 3-Pin(3+Tab) TO-220F-3FS Tube
товар відсутній
2SK4198FS 2SK4198FS onsemi Description: MOSFET N-CH 600V 4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.34Ohm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 30 V
товар відсутній
2SK4198LS 2SK4198LS onsemi 2SK4198LS.pdf Description: MOSFET N-CH 600V 5A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.34Ohm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 30 V
товар відсутній
NTE312 NTE312 NTE Electronics nte312.pdf Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 15mA; 0.36W; TO92; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15mA
Power dissipation: 0.36W
Case: TO92
Gate-source voltage: -30V
Mounting: THT
Kind of package: bulk
Gate current: 50mA
товар відсутній
2SK41NPE
на замовлення 26000 шт:
термін постачання 14-28 дні (днів)
2SK41NPF
на замовлення 26000 шт:
термін постачання 14-28 дні (днів)
2SK41NPG
на замовлення 26000 шт:
термін постачання 14-28 дні (днів)
2SK28372SK4108
на замовлення 20000 шт:
термін постачання 14-28 дні (днів)
NTE451 nte451.pdf
NTE451
Виробник: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 20mA; 0.35W; TO92; Igt: 30mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 20mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: -25V
Mounting: THT
Kind of package: bulk
Gate current: 30mA
на замовлення 52 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+134.91 грн
8+ 102.23 грн
22+ 96.66 грн
Мінімальне замовлення: 3
2SK4103
Код товару: 83547
Транзистори > Польові N-канальні
товар відсутній
2SK4106
Код товару: 163596
Транзистори > Польові N-канальні
товар відсутній
2SK4107 (транзистор)
Код товару: 51721
Транзистори > Польові N-канальні
товар відсутній
2SK4111
Код товару: 162476
Транзистори > Польові N-канальні
товар відсутній
2SK4115
Код товару: 103452
Транзистори > Польові N-канальні
товар відсутній
2SK4103(TE16L1,NQ) 2sk4103_en_wm_20100413.pdf
2SK4103(TE16L1,NQ)
Виробник: Toshiba
Trans MOSFET N-CH Si 500V 5A 3-Pin(2+Tab) New PW-Mold T/R
товар відсутній
2SK4107(F) 2sk4107_en_datasheet_090929.pdf
2SK4107(F)
Виробник: Toshiba
Trans MOSFET N-CH Si 500V 15A 3-Pin(3+Tab) TO-3PN
товар відсутній
2SK4108(F) 2sk4108_en_datasheet_090929.pdf
2SK4108(F)
Виробник: Toshiba
Trans MOSFET N-CH Si 500V 20A 3-Pin(3+Tab) TO-3PN
товар відсутній
2SK4115(F) 392sk4115_datasheet_en_20131101.pdf.pdf
2SK4115(F)
Виробник: Toshiba
Trans MOSFET N-CH Si 900V 7A 3-Pin(3+Tab) TO-3PN
товар відсутній
2SK4115(F)
2SK4115(F)
Виробник: Toshiba
MOSFET
товар відсутній
2SK4116LS 2SK4116LS.pdf
2SK4116LS
Виробник: onsemi
Description: MOSFET N-CH 400V 8.9A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V
товар відсутній
2SK4117LS 2SK4117LS.pdf
2SK4117LS
Виробник: onsemi
Description: MOSFET N-CH 400V 10.4A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 30 V
товар відсутній
2SK4124 869-1070.jpg
2SK4124
Виробник: onsemi
Description: MOSFET N-CH 500V 20A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товар відсутній
2SK4124-1E
2SK4124-1E
Виробник: onsemi
Description: MOSFET N-CH 500V 20A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товар відсутній
2SK4125 869-1070.jpg
2SK4125
Виробник: onsemi
Description: MOSFET N-CH 600V 17A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товар відсутній
2SK4125-1E
2SK4125-1E
Виробник: onsemi
Description: MOSFET N-CH 600V 17A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товар відсутній
2SK4125-1E 2sk4125-d.pdf
2SK4125-1E
Виробник: ON Semiconductor
Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-3P Tube
товар відсутній
2SK4125-1EX 2sk4125-d.pdf
Виробник: ON Semiconductor
Trans MOSFET N-CH 600V 17A
товар відсутній
2SK4125-1EX
2SK4125-1EX
Виробник: onsemi
Description: MOSFET N-CH 600V 17A TO3P-3L
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товар відсутній
2SK4126 2SK4126.pdf
2SK4126
Виробник: onsemi
Description: MOSFET N-CH 650V 15A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товар відсутній
2SK4150TZ-E 2sk4150-datasheet?language=en
2SK4150TZ-E
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 250V 400MA TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 5.7Ohm @ 200mA, 4V
Power Dissipation (Max): 750mW (Ta)
Supplier Device Package: TO-92
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 25 V
товар відсутній
2SK4151TZ-E 2sk4151-datasheet?language=en
2SK4151TZ-E
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 150V 1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 1.95Ohm @ 500mA, 4V
Power Dissipation (Max): 750mW (Ta)
Supplier Device Package: TO-92
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 98 pF @ 10 V
товар відсутній
2SK4161D 2sk4161d_ds_en.pdf
Виробник: Sanken Electric USA Inc.
Description: MOS FET 60V/100A/0.0038
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 10 V
товар відсутній
2SK4161D 81800598457506622sk4161d_ds_en.pdf
Виробник: Sanken Electric Co.
N Channel Trench Power Mosfet
товар відсутній
2SK4171 2SK4171.pdf
2SK4171
Виробник: onsemi
Description: MOSFET N-CH 60V 100A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 50A, 10V
Power Dissipation (Max): 1.75W (Ta), 75W (Tc)
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 20 V
товар відсутній
2SK4177-DL-1E 51ena0869-d.pdf
2SK4177-DL-1E
Виробник: ON Semiconductor
Trans MOSFET N-CH Si 1.5KV 2A 3-Pin(2+Tab) D2PAK T/R
товар відсутній
2SK4177-DL-1E ena0869-d.pdf
2SK4177-DL-1E
Виробник: onsemi
Description: MOSFET N-CH 1500V 2A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 80W (Tc)
Supplier Device Package: TO-263-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
товар відсутній
2SK4177-DL-E ena0869.pdf
Виробник: ON Semiconductor
Trans MOSFET N-CH Si 1.5KV 2A 3-Pin(2+Tab) SMP-FD T/R
товар відсутній
2SK4177-DL-E ena0869-d.pdf
2SK4177-DL-E
Виробник: onsemi
Description: MOSFET N-CH 1500V 2A SMP-FD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 80W (Tc)
Supplier Device Package: SMP-FD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
товар відсутній
2SK4177-E ena0869-d.pdf
2SK4177-E
Виробник: onsemi
Description: MOSFET N-CH 1500V 2A SMP-FD
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SMP-FD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
товар відсутній
2SK4177-E ena0869.pdf
Виробник: ON Semiconductor
NCH 4V DRIVE SERIES
товар відсутній
2SK4196LS
2SK4196LS
Виробник: onsemi
Description: MOSFET N-CH 500V 5.5A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 2.8A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 30 V
товар відсутній
2SK4196LS-1E
2SK4196LS-1E
Виробник: onsemi
Description: MOSFET N-CH 500V 5A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 2.8A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 30 V
товар відсутній
2SK4197FS 2017ena1368-d.pdf
2SK4197FS
Виробник: ON Semiconductor
Trans MOSFET N-CH Si 600V 3.3A 3-Pin(3+Tab) TO-220F-3FS Tube
товар відсутній
2SK4197FS
2SK4197FS
Виробник: onsemi
Description: MOSFET N-CH 600V 3.3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1.8A, 10V
Power Dissipation (Max): 2W (Ta), 28W (Tc)
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 30 V
товар відсутній
2SK4197LS ena1223.pdf
2SK4197LS
Виробник: ON Semiconductor
Trans MOSFET N-CH Si 600V 3.5A 3-Pin(3+Tab) TO-220FI Bag
товар відсутній
2SK4198FS 1383ena1370-d.pdf
Виробник: ON Semiconductor
Trans MOSFET N-CH Si 600V 4A 3-Pin(3+Tab) TO-220F-3FS Tube
товар відсутній
2SK4198FS 1383ena1370-d.pdf
2SK4198FS
Виробник: ON Semiconductor
Trans MOSFET N-CH Si 600V 4A 3-Pin(3+Tab) TO-220F-3FS Tube
товар відсутній
2SK4198FS
2SK4198FS
Виробник: onsemi
Description: MOSFET N-CH 600V 4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.34Ohm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 30 V
товар відсутній
2SK4198LS 2SK4198LS.pdf
2SK4198LS
Виробник: onsemi
Description: MOSFET N-CH 600V 5A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.34Ohm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 30 V
товар відсутній
NTE312 nte312.pdf
NTE312
Виробник: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 15mA; 0.36W; TO92; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15mA
Power dissipation: 0.36W
Case: TO92
Gate-source voltage: -30V
Mounting: THT
Kind of package: bulk
Gate current: 50mA
товар відсутній
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