Виробник: Knowles Novacap
Multilayer Ceramic Capacitors MLCC - Leaded 0.1uF 500V 10%

Виробник: Knowles Novacap
Multilayer Ceramic Capacitors MLCC - SMD/SMT Multilayer Ceramic Capacitor

Виробник: Microchip Technology
EEPROM Serial-SPI 4K-bit 512 x 8 5V 8-Pin SOIC

Виробник: Microchip Technology
EEPROM Serial-SPI 4K-bit 512 x 8 5V 8-Pin SOIC

Виробник: Microchip Technology
EEPROM Serial-SPI 4K-bit 512 x 8 3.3V/5V 8-Pin SOIC

Виробник: Microchip Technology
512x8 CMOS 2.7Vp SO-8 SPI-Serial EEPROM

Виробник: Microchip Technology
SPI SERIAL AUTOMOTIVE EEPROMS

Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 104W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 104W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced

Виробник: Infineon Technologies
Trans MOSFET N-CH 100V 100A Automotive 8-Pin TDSON EP T/R

Виробник: Infineon Technologies
Trans MOSFET N-CH 100V 140A T/R

Виробник: Infineon Technologies
OPTIMOS SMALL-SIGNAL-TRANSISTOR

Виробник: ON Semiconductor
Trans MOSFET N-CH 100V 210A 9-Pin(8+Tab) TO-LL T/R

Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 99A
Pulsed drain current: 560A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhanced

Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 99A
Pulsed drain current: 560A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт

Виробник: ON Semiconductor
Trans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-3P Tube

Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 160A; 62W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 160A
Power dissipation: 62W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhanced

Виробник: Infineon Technologies
SP005423087

Виробник: Infineon Technologies
MOSFET MOSFET_(75V 120V(

Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced

Виробник: Infineon Technologies
Trans MOSFET N-CH 100V 40A Automotive 8-Pin TSDSON EP T/R

Виробник: Vicor
Module DC-DC 48VIN 1-OUT 12V 40A 500W 5-Pin 1/8-Brick

Виробник: Vicor
Intermediate Bus Converters

Виробник: Vicor
Module DC-DC 48VIN 1-OUT 9.6V 40A 300W 5-Pin 1/8-Brick

Виробник: Vicor
500Watts Output DC to DC Converter

Виробник: Littelfuse
Trans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-247

Виробник: Littelfuse
Trans MOSFET N-CH 100V 140A 3-Pin(2+Tab) TO-268

Виробник: IXYS
MOSFET N CHAN 100V TO-268-3

Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns

Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
кількість в упаковці: 1 шт

Виробник: Littelfuse
Trans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-3P

Виробник: IXYS
MOSFET 140 Amps 100V 0.011 Rds

Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns

Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
кількість в упаковці: 1 шт

Виробник: Littelfuse
Trans MOSFET N-CH 100V 140A 3-Pin(2+Tab) TO-268

Виробник: Littelfuse
Trans MOSFET N-CH 100V 140A 3-Pin(2+Tab) TO-268 T/R

Виробник: IXYS
Discrete Semiconductor Modules IXTT140N10P TRL

Виробник: Micro Commercial Components
MCG40N10Y-TP

Виробник: Micro Commercial Components (MCC)
MOSFET N-CHANNEL MOSFET, DFN3333

Виробник: Micro Commercial Components
MCG40N10YHE3-TP

Виробник: Micro Commercial Components
N-Channel Enhancement Mode Field Effect Transistor

Виробник: Micro Commercial Components
N-CHANNEL MOSFET DPAK (TO-252) AEC-Q101 Qualified

Виробник: Micro Commercial Components
Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) DPAK T/R

Виробник: Micro Commercial Components (MCC)
MOSFET N-CHANNEL MOSFET,TO-247

Виробник: Renesas
Trans MOSFET N-CH 100V 40A Automotive 3-Pin(2+Tab) D2PAK T/R

Виробник: Renesas
Trans MOSFET N-CH 100V 40A Automotive 3-Pin(2+Tab) MP-3ZP T/R

Виробник: Renesas
Trans MOSFET N-CH 100V 40A Automotive 8-Pin HSON T/R

Виробник: ON Semiconductor
NVMFS040N10MCLT1G

Виробник: ON Semiconductor
Power MOSFET, Single N-Channel

Виробник: onsemi
MOSFET MOSFET - Power, Single, N-Channel,

Виробник: Panjit
MOSFET DFN5060-8L/MOS/NFET-100FKMNH

Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced

Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт

Виробник: RELPOL
Category: Power Electromagnetic Relays
Description: Relay: electromagnetic; SPDT; Ucoil: 5VDC; 40A; Series: R40N; PCB
Mounting: PCB
Operating temperature: -55...100°C
Switched voltage: max. 110V DC; max. 300V AC
Contact current max.: 40A
Contact resistance: 30mΩ
OEM number: 2614808
Mechanical durability: 100000000 cycles
IP rating: IP64
Electrical life: 1000000 cycles
Body dimensions: 32.5x27.6x20.5mm
Contact material: AgCdO
Coil resistance: 28Ω
Contacts configuration: SPDT
AC contacts rating @R: 40A / 240V AC
DC contacts rating @R: 40A / 30V DC
Type of relay: electromagnetic
Relay variant: power
Relay series: R40N
Rated coil voltage: 5V DC
Coil power consumption: 0.9W
Operate time: 15ms
Release time: 10ms

Виробник: RELPOL
Category: Power Electromagnetic Relays
Description: Relay: electromagnetic; SPDT; Ucoil: 5VDC; 40A; Series: R40N; PCB
Mounting: PCB
Operating temperature: -55...100°C
Switched voltage: max. 110V DC; max. 300V AC
Contact current max.: 40A
Contact resistance: 30mΩ
OEM number: 2614808
Mechanical durability: 100000000 cycles
IP rating: IP64
Electrical life: 1000000 cycles
Body dimensions: 32.5x27.6x20.5mm
Contact material: AgCdO
Coil resistance: 28Ω
Contacts configuration: SPDT
AC contacts rating @R: 40A / 240V AC
DC contacts rating @R: 40A / 30V DC
Type of relay: electromagnetic
Relay variant: power
Relay series: R40N
Rated coil voltage: 5V DC
Coil power consumption: 0.9W
Operate time: 15ms
Release time: 10ms
кількість в упаковці: 1 шт

Виробник: Rectron
MOSFET MOSFET D-PAK

Виробник: Vishay
Trans MOSFET N-CH 100V 40A Automotive 3-Pin(2+Tab) TO-252

Виробник: Vishay / Siliconix
MOSFET RECOMMENDED ALT SQD70140EL_GE3

Виробник: Vishay
Trans MOSFET N-CH 100V 40A Automotive 3-Pin(2+Tab) TO-252

Виробник: Vishay / Siliconix
MOSFET RECOMMENDED ALT SQM40N10-30_GE3

Виробник: Vishay
Trans MOSFET N-CH 100V 40A Automotive 3-Pin(2+Tab) TO-263 T/R