Результат пошуку "58999" : 125
Вид перегляду :
,TO-226_straightlead.jpg "PBRN113ES,126")
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| OS3-40-000000002400T6T6-VBBY9U | Hirschmann | Managed Ethernet Switches OS3-40-000000002400T6T6-VBBY9U |
товар відсутній |
||
| OS3-44-080008000800T6T6-VQQY99 | Hirschmann | Managed Ethernet Switches OS3-44-080008000800T6T6-VQQY99 |
товар відсутній |
||
| OS3-44-240024002400T6T6-VPPY9M | Hirschmann | Managed Ethernet Switches OS3-44-240024002400T6T6-VPPY9M |
товар відсутній |
||
| OS3-44-240024002400T6T6-VQQY99 | Hirschmann | Managed Ethernet Switches OS3-44-240024002400T6T6-VQQY99 |
товар відсутній |
||
|
|
PBRN113ES,126 | NXP USA Inc. |
 Description: TRANS PREBIAS NPN 40V TO92-3Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 300mA, 5V Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 700 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
товар відсутній |
| OS3-40-000000002400T6T6-VBBY9U |
Виробник: Hirschmann
Managed Ethernet Switches OS3-40-000000002400T6T6-VBBY9U
Managed Ethernet Switches OS3-40-000000002400T6T6-VBBY9U
товар відсутній
| OS3-44-080008000800T6T6-VQQY99 |
Виробник: Hirschmann
Managed Ethernet Switches OS3-44-080008000800T6T6-VQQY99
Managed Ethernet Switches OS3-44-080008000800T6T6-VQQY99
товар відсутній
| OS3-44-240024002400T6T6-VPPY9M |
Виробник: Hirschmann
Managed Ethernet Switches OS3-44-240024002400T6T6-VPPY9M
Managed Ethernet Switches OS3-44-240024002400T6T6-VPPY9M
товар відсутній
| OS3-44-240024002400T6T6-VQQY99 |
Виробник: Hirschmann
Managed Ethernet Switches OS3-44-240024002400T6T6-VQQY99
Managed Ethernet Switches OS3-44-240024002400T6T6-VQQY99
товар відсутній
| PBRN113ES,126 |
|
Виробник: NXP USA Inc.
Description: TRANS PREBIAS NPN 40V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 300mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 700 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Description: TRANS PREBIAS NPN 40V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 300mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 700 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
товар відсутній