Виробник: Weidmüller
Description: RELAY GEN PURPOSE DPDT 12A 24V
Packaging: Bulk
Features: Test Button
Mounting Type: Socketable
Coil Voltage: 24VAC
Operating Temperature: -40°C ~ 70°C
Termination Style: Plug In, Quick Connect - 0.110" (2.8mm)
Relay Type: General Purpose
Coil Current: 41.6 mA
Coil Type: Non Latching
Contact Material: Silver Nickel (AgNi)
Contact Form: DPDT (2 Form C)
Contact Rating (Current): 12 A
Switching Voltage: 400VAC - Max
Must Release Voltage: 7.2 VAC
Must Operate Voltage: 19.2 VAC
Operate Time: 15 ms
Release Time: 10 ms
Approval Agency: CSA, cURus, UKCA, VDE
Load - Max Switching: 4800VA

Виробник: Intel
PRO/1000 PF Server Adapter, retail unit

Виробник: Sensata-Airpax
Description: CIRCUIT BREAKER MAG-HYDR LEVER
Packaging: Bulk
Mounting Type: Panel Mount
Actuator Type: Lever
Breaker Type: Magnetic (Hydraulic Delay)
Number of Poles: 1

Виробник: Sensata-Airpax
Description: CIRCUIT BREAKER MAG-HYDR ROCKER
Packaging: Bulk

Виробник: Intel
Description: IC FPGA 552 I/O 1152FBGA
Packaging: Tray
Package / Case: 1152-BBGA, FCBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C (TJ)
Voltage - Supply: 0.82V ~ 0.88V
Number of Logic Elements/Cells: 622000
Supplier Device Package: 1152-FBGA (35x35)
Number of LABs/CLBs: 234720
Total RAM Bits: 51200000
Number of I/O: 552
DigiKey Programmable: Not Verified

Виробник: Brady Corporation
Description: (RAW) DRUM-65 GAL, SCREW TOP, 89
Packaging: Bulk

Виробник: Ampleon USA Inc.
Description: RF MOSFET LDMOS 28V 16HVSON
Packaging: Tape & Reel (TR)
Package / Case: 16-VDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.14GHz
Configuration: Dual, Common Source
Power - Output: 2W
Gain: 17dB
Technology: LDMOS
Supplier Device Package: 16-HVSON (6x4)
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 110 mA

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 20.3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 483 pF @ 25 V

Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 75A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 50A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5836 pF @ 25 V

Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 500V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V

Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 500V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V

Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 9A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V

Виробник: KEMET
Description: CAP CER 4.7UF 25V X8L SMD
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Lead Style: J-Lead
Features: Low ESL (Stacked), High Temperature
Voltage - Rated: 25V
Package / Case: Stacked SMD, 2 J-Lead
Temperature Coefficient: X8L
Size / Dimension: 0.236" L x 0.197" W (6.00mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 150°C
Applications: Automotive, Bypass, Decoupling, Boardflex Sensitive
Ratings: AEC-Q200
Thickness (Max): 0.217" (5.50mm)
Capacitance: 4.7 µF

Виробник: KEMET
Description: CAP CER 4.7UF 25V X8L SMD
Packaging: Cut Tape (CT)
Tolerance: ±20%
Lead Style: J-Lead
Features: Low ESL (Stacked), High Temperature
Voltage - Rated: 25V
Package / Case: Stacked SMD, 2 J-Lead
Temperature Coefficient: X8L
Size / Dimension: 0.236" L x 0.197" W (6.00mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 150°C
Applications: Automotive, Bypass, Decoupling, Boardflex Sensitive
Ratings: AEC-Q200
Thickness (Max): 0.217" (5.50mm)
Capacitance: 4.7 µF

Виробник: Samsung Electro-Mechanics
Description: FIXED IND 240NH 3.6A 23MOHM SMD
Packaging: Cut Tape (CT)
Tolerance: ±20%
Package / Case: 0806 (2016 Metric)
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Shielding: Shielded
Type: Thin Film
Operating Temperature: -40°C ~ 125°C
DC Resistance (DCR): 23mOhm Max
Current - Saturation (Isat): 4.7A
Material - Core: Metal Composite
Inductance Frequency - Test: 1 MHz
Supplier Device Package: 0806 (2016 Metric)
Height - Seated (Max): 0.031" (0.80mm)
Inductance: 240 nH
Current Rating (Amps): 3.6 A

Виробник: Samsung Electro-Mechanics
Description: FIXED IND 240NH 3.6A 23MOHM SMD
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: 0806 (2016 Metric)
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Shielding: Shielded
Type: Thin Film
Operating Temperature: -40°C ~ 125°C
DC Resistance (DCR): 23mOhm Max
Current - Saturation (Isat): 4.7A
Material - Core: Metal Composite
Inductance Frequency - Test: 1 MHz
Supplier Device Package: 0806 (2016 Metric)
Height - Seated (Max): 0.031" (0.80mm)
Inductance: 240 nH
Current Rating (Amps): 3.6 A

Виробник: TTM Technologies, Inc.
Description: RF DIR COUPLER 1.4-1.7GHZ 0805
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Frequency: 1.4GHz ~ 1.7GHz
Insertion Loss: 0.55dB
Power - Max: 2W
Coupling Factor: 5.5dB
Coupler Type: Standard
Return Loss: -28dB
Supplier Device Package: 0805

Виробник: ITT Cannon
Standard Circular Connector

Виробник: Renesas / Intersil
LED Lighting Development Tools ISL97687IRTZ-HEVALZ - EVALUATION BOARD - 28 LD TQFN -22 LEDs

Виробник: Renesas / Intersil
LED Lighting Development Tools ISL97687IRTZ -EVALUATION BOARD -28 LD TQFN - 12 LEDs/CH - RO

Виробник: OmniOn Power
Description: DC DC CONVERTER 28V 448W
Packaging: Tray
Features: Remote On/Off, OCP, OTP, OVP, UVLO
Package / Case: 9-DIP Module
Size / Dimension: 2.39" L x 2.27" W x 0.50" H (60.7mm x 57.7mm x 12.7mm)
Mounting Type: Through Hole
Type: Isolated Module
Operating Temperature: -40°C ~ 85°C
Applications: ITE (Commercial)
Voltage - Input (Max): 75V
Efficiency: 93.5%
Current - Output (Max): 16A
Voltage - Input (Min): 36V
Voltage - Output 1: 28V
Control Features: Enable, Active Low
Power (Watts): 448 W
Number of Outputs: 1
Voltage - Isolation: 1.5 kV

Виробник: Lineage Power
Module DC-DC 48VIN 1-OUT 28V 16A 450W 9-Pin Half-Brick

Виробник: Murata Electronics
Description: FIXED IND 4.9NH 1.2A 0.081OHM SM
Tolerance: ±0.2nH
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Size / Dimension: 0.065" L x 0.039" W (1.65mm x 0.99mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Type: Drum Core, Wirewound
Operating Temperature: -55°C ~ 125°C
DC Resistance (DCR): 81mOhm Max
Q @ Freq: 23 @ 250MHz
Frequency - Self Resonant: 7.3GHz
Material - Core: Non-Magnetic
Inductance Frequency - Test: 100 MHz
Height - Seated (Max): 0.039" (1.00mm)
Inductance: 4.9 nH
Current Rating (Amps): 1.2 A

Виробник: Murata Electronics
Description: FIXED IND 4.9NH 1.2A 0.081OHM SM
Packaging: Cut Tape (CT)
Tolerance: ±0.2nH
Package / Case: 0603 (1608 Metric)
Size / Dimension: 0.065" L x 0.039" W (1.65mm x 0.99mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Type: Drum Core, Wirewound
Operating Temperature: -55°C ~ 125°C
DC Resistance (DCR): 81mOhm Max
Q @ Freq: 23 @ 250MHz
Frequency - Self Resonant: 7.3GHz
Material - Core: Non-Magnetic
Inductance Frequency - Test: 100 MHz
Height - Seated (Max): 0.039" (1.00mm)
Inductance: 4.9 nH
Current Rating (Amps): 1.2 A

Виробник: TDK Corporation
Description: FIXED IND 5.1NH 350MA 400MOHM SM
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: 0201 (0603 Metric)
Size / Dimension: 0.026" L x 0.014" W (0.65mm x 0.35mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Type: Multilayer
Operating Temperature: -55°C ~ 125°C
DC Resistance (DCR): 400mOhm Max
Q @ Freq: 16 @ 500MHz
Frequency - Self Resonant: 5.5GHz
Material - Core: Ceramic, Non-Magnetic
Inductance Frequency - Test: 500 MHz
Supplier Device Package: 0201 (0603 Metric)
Height - Seated (Max): 0.016" (0.40mm)
Inductance: 5.1 nH
Current Rating (Amps): 350 mA

Виробник: Microchip Technology
Description: TVS DIODE 14VWM 23.2VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 129.4A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500

Виробник: NXP USA Inc.
Description: MOSFET N-CH 100V 67.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67.5A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
Power Dissipation (Max): 63.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V

Виробник: CUI Inc
Plug-In Adapter Single-OUT 24V 1.25A 30W

Виробник: CUI Inc.
Desktop AC Adapters 30W 24V 1.25A NAcord C8 CentPos 2.5 RA

Виробник: Texas Instruments
Description: IC RECEIVER 0/4 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/4
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 16-SOIC
Receiver Hysteresis: 50 mV

Виробник: Texas Instruments
Description: IC TXRX NON-INVERT 3.6V 54BGA
Packaging: Tape & Reel (TR)
Package / Case: 54-TFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 54-BGA Microstar Junior (8x5.5)

Виробник: Brady Corporation
Description: (SOC) SPC318, SOC, SKIMMER 3"X18
Packaging: Bulk

Виробник: Phoenix Contact
Connector Accessories Panel Mounting Frame Straight Metal Bare Metallic