Результат пошуку "ES2D" : > 180
Вид перегляду :
Мінімальне замовлення: 100
Мінімальне замовлення: 8
Мінімальне замовлення: 10
Мінімальне замовлення: 7500
Мінімальне замовлення: 12
Мінімальне замовлення: 12
Мінімальне замовлення: 10
Мінімальне замовлення: 14000
Мінімальне замовлення: 6000
Мінімальне замовлення: 10000
Мінімальне замовлення: 12
Мінімальне замовлення: 14000
Мінімальне замовлення: 10
Мінімальне замовлення: 1000
Мінімальне замовлення: 3000
Мінімальне замовлення: 10
Мінімальне замовлення: 7
Мінімальне замовлення: 4
Мінімальне замовлення: 9
Мінімальне замовлення: 9
Мінімальне замовлення: 750
Мінімальне замовлення: 6400
Мінімальне замовлення: 6400
Мінімальне замовлення: 6400
Мінімальне замовлення: 9
Мінімальне замовлення: 3200
Мінімальне замовлення: 9
Мінімальне замовлення: 2959
Мінімальне замовлення: 8
Мінімальне замовлення: 7500
Мінімальне замовлення: 7500
Мінімальне замовлення: 7500
Мінімальне замовлення: 750
Мінімальне замовлення: 70
Мінімальне замовлення: 45
Мінімальне замовлення: 11
Мінімальне замовлення: 3000
Мінімальне замовлення: 10
Мінімальне замовлення: 3000
Мінімальне замовлення: 6662
Мінімальне замовлення: 10
Мінімальне замовлення: 40
Мінімальне замовлення: 25
Мінімальне замовлення: 1800
Мінімальне замовлення: 10
Мінімальне замовлення: 3000
Мінімальне замовлення: 11
Мінімальне замовлення: 11
Мінімальне замовлення: 3000
Мінімальне замовлення: 11
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ES2DAF | ONSEMI |
Description: ONSEMI - ES2DAF - Diode mit kurzer/ultrakurzer Erholzeit, 200 V, 2 A, Einfach, 950 mV, 35 ns, 50 A tariffCode: 85411000 Bauform - Diode: DO-214AD Durchlassstoßstrom: 50A rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 950mV Sperrverzögerungszeit: 35ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 2A euEccn: NLR Wiederkehrende Spitzensperrspannung: 200V Anzahl der Pins: 2 Pins Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C SVHC: Lead (14-Jun-2023) |
на замовлення 6324 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DAF | onsemi |
Description: DIODE GEN PURP 200V 2A DO214AD Packaging: Cut Tape (CT) Package / Case: DO-214AD, SMAF Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AD (SMAF) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 99651 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DAF | onsemi / Fairchild | Rectifiers 200V 2A SMA Super FastRectifiers |
на замовлення 8609 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
ES2DAF-T | Taiwan Semiconductor Corporation |
Description: 35NS, 2A, 200V, SUPER FAST RECOV Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 27pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DAF-T | Taiwan Semiconductor Corporation |
Description: 35NS, 2A, 200V, SUPER FAST RECOV Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 27pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DAH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6216 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DALH | Taiwan Semiconductor Corporation |
Description: 35NS, 2A, 200V, SUPER FAST RECOV Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 28pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 14000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DALH | Taiwan Semiconductor Corporation |
Description: 35NS, 2A, 200V, SUPER FAST RECOV Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 28pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 14000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DB | MDD |
Description: DIODE GEN PURP 200V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 3000000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DFL | Taiwan Semiconductor Corporation |
Description: 35NS, 2A, 200V, SUPER FAST RECOV Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 22pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DFL | Taiwan Semiconductor Corporation |
Description: 35NS, 2A, 200V, SUPER FAST RECOV Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 22pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DFSH | Taiwan Semiconductor Corporation |
Description: 35NS, 2A, 200V, SUPER FAST RECOV Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 28pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 14000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DFSH | Taiwan Semiconductor Corporation |
Description: 35NS, 2A, 200V, SUPER FAST RECOV Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 28pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 14000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DG | SHIKUES |
2A; 600V packaging: tape&reel ES2DG SHIKUES diode rectifying DP ES2DG SHK кількість в упаковці: 500 шт |
на замовлення 5000 шт: термін постачання 28-31 дні (днів) |
|
|||||||||||||||
ES2DH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DHE3_A/H | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 18pF Case: DO214AA; SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Leakage current: 0.35mA Kind of package: reel; tape |
на замовлення 400 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
ES2DHE3_A/H | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 18pF Case: DO214AA; SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Leakage current: 0.35mA Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 400 шт: термін постачання 7-14 дні (днів) |
|
|||||||||||||||
ES2DHE3_A/H | Vishay General Semiconductor | Rectifiers 2A,200V,20ns SMB, UF Rect, SMD |
на замовлення 2320 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
ES2DHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 2A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 1929 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DHE3_A/I | Vishay | Diode Switching 200V 2A Automotive 2-Pin SMB T/R |
на замовлення 28800 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DHE3_A/I | Vishay | Diode Switching 200V 2A Automotive 2-Pin SMB T/R |
на замовлення 25600 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DHE3_A/I | Vishay | Diode Switching 200V 2A Automotive 2-Pin SMB T/R |
на замовлення 25600 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 2A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 7223 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 3200 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DHE3_A/I | Vishay General Semiconductor | Rectifiers 2A,200V,20ns SMB, UF Rect, SMD |
на замовлення 8884 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
ES2DPX | Nexperia USA Inc. |
Description: DIODE GP 200V 2A SOD128/CFP5 Packaging: Bulk Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 200 nA @ 200 V |
на замовлення 87324 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DSMA | Diotec Semiconductor | Rectifiers Diode, Superfast, SMA, 200V, 2A, 150C |
на замовлення 5631 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
ES2DSMA | Diotec Semiconductor | Diode Switching 200V 3A 2-Pin SMA T/R |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DSMA | Diotec Semiconductor | ES2DSMA |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DSMA | Diotec Electronics | Diode Switching 200V 3A 2-Pin SMA T/R |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DSMA | Diotec Semiconductor |
Description: DIODE GEN PURP 200V 3A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 3 µA @ 200 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DTR | SMC DIODE SOLUTIONS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ir: 5uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMA Max. forward voltage: 0.95V Leakage current: 5µA Kind of package: reel; tape |
на замовлення 3895 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
ES2DTR | SMC DIODE SOLUTIONS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ir: 5uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMA Max. forward voltage: 0.95V Leakage current: 5µA Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 3895 шт: термін постачання 7-14 дні (днів) |
|
|||||||||||||||
ES2DV | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DV | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DVH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DVH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2DVRX | Nexperia USA Inc. |
Description: DIODE GEN PURP 200V 2A SOD123W Packaging: Bulk Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 200 nA @ 200 V |
на замовлення 58736 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2D_HF | Diodes Incorporated | Rectifiers Superfast Recovery Rectifier SMB T&R 3K |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
ES2D_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; superfast switching Case: SMA Max. forward voltage: 0.95V Max. forward impulse current: 50A Leakage current: 1µA Kind of package: reel; tape |
на замовлення 1775 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
ES2D_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; superfast switching Case: SMA Max. forward voltage: 0.95V Max. forward impulse current: 50A Leakage current: 1µA Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 1775 шт: термін постачання 7-14 дні (днів) |
|
|||||||||||||||
ES2D_R1_00001 | Panjit International Inc. |
Description: DIODE GEN PURP 200V 2A SMA Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 5400 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2D_R1_00001 | Panjit International Inc. |
Description: DIODE GEN PURP 200V 2A SMA Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 6654 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
ES2D | ES2D Диоды Ultra fast |
на замовлення 1010 шт: термін постачання 2-3 дні (днів) |
|||||||||||||||||
ES2D-13-F |
на замовлення 40000 шт: термін постачання 14-28 дні (днів) |
||||||||||||||||||
ES2D-E3 | VISHAY |
на замовлення 6400 шт: термін постачання 14-28 дні (днів) |
|||||||||||||||||
ES2D-E3 | VISHAY | 09+ |
на замовлення 3218 шт: термін постачання 14-28 дні (днів) |
||||||||||||||||
ES2D-E35T |
на замовлення 3200 шт: термін постачання 14-28 дні (днів) |
||||||||||||||||||
ES2D-T | MICRO | SMB |
на замовлення 600 шт: термін постачання 14-28 дні (днів) |
||||||||||||||||
ES2DA |
на замовлення 30000 шт: термін постачання 14-28 дні (днів) |
||||||||||||||||||
ES2DA-13 | DIODES | DO214AC |
на замовлення 20000 шт: термін постачання 14-28 дні (днів) |
||||||||||||||||
ES2DHE3/52T | Vishay |
на замовлення 622 шт: термін постачання 14-28 дні (днів) |
|||||||||||||||||
FES2DE-7 | Diodes Incorporated |
Description: DIODE GEN PURP 200V 2A F1A T&R Packaging: Tape & Reel (TR) Package / Case: DO-219AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 32pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: F1A (DO219AA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FES2DE-7 | Diodes Incorporated |
Description: DIODE GEN PURP 200V 2A F1A T&R Packaging: Cut Tape (CT) Package / Case: DO-219AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 32pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: F1A (DO219AA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FES2DEQ-7 | Diodes Incorporated | Rectifiers FRED GPP Rectifier DO-219AA T&R 3K |
на замовлення 2997 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
FES2DEQ-7 | Diodes Incorporated |
Description: DIODE GP 200V 2A DO219AA T&R Packaging: Tape & Reel (TR) Package / Case: DO-219AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 32pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-219AA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FES2DEQ-7 | Diodes Incorporated |
Description: DIODE GP 200V 2A DO219AA T&R Packaging: Cut Tape (CT) Package / Case: DO-219AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 32pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-219AA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 47960 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
SM5A27HES/2D | VISHAY |
на замовлення 6200 шт: термін постачання 14-28 дні (днів) |
ES2DAF |
Виробник: ONSEMI
Description: ONSEMI - ES2DAF - Diode mit kurzer/ultrakurzer Erholzeit, 200 V, 2 A, Einfach, 950 mV, 35 ns, 50 A
tariffCode: 85411000
Bauform - Diode: DO-214AD
Durchlassstoßstrom: 50A
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
Durchlassspannung, max.: 950mV
Sperrverzögerungszeit: 35ns
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 2A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 200V
Anzahl der Pins: 2 Pins
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
SVHC: Lead (14-Jun-2023)
Description: ONSEMI - ES2DAF - Diode mit kurzer/ultrakurzer Erholzeit, 200 V, 2 A, Einfach, 950 mV, 35 ns, 50 A
tariffCode: 85411000
Bauform - Diode: DO-214AD
Durchlassstoßstrom: 50A
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
Durchlassspannung, max.: 950mV
Sperrverzögerungszeit: 35ns
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 2A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 200V
Anzahl der Pins: 2 Pins
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
SVHC: Lead (14-Jun-2023)
на замовлення 6324 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
100+ | 21.31 грн |
500+ | 18.68 грн |
ES2DAF |
Виробник: onsemi
Description: DIODE GEN PURP 200V 2A DO214AD
Packaging: Cut Tape (CT)
Package / Case: DO-214AD, SMAF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AD (SMAF)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 2A DO214AD
Packaging: Cut Tape (CT)
Package / Case: DO-214AD, SMAF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AD (SMAF)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 99651 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 40.96 грн |
10+ | 34.18 грн |
100+ | 23.68 грн |
500+ | 18.58 грн |
1000+ | 15.81 грн |
2000+ | 14.08 грн |
5000+ | 13.12 грн |
ES2DAF |
Виробник: onsemi / Fairchild
Rectifiers 200V 2A SMA Super FastRectifiers
Rectifiers 200V 2A SMA Super FastRectifiers
на замовлення 8609 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 32.47 грн |
12+ | 26.81 грн |
100+ | 18.27 грн |
500+ | 16.67 грн |
1000+ | 14.35 грн |
5000+ | 13.62 грн |
10000+ | 12.95 грн |
ES2DAF-T |
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7500+ | 4.45 грн |
ES2DAF-T |
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.87 грн |
16+ | 17.44 грн |
100+ | 8.8 грн |
500+ | 6.74 грн |
1000+ | 5 грн |
2000+ | 4.21 грн |
ES2DAH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6216 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.15 грн |
15+ | 18.47 грн |
100+ | 11.1 грн |
500+ | 9.64 грн |
1000+ | 6.56 грн |
2000+ | 6.04 грн |
ES2DALH |
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 29.46 грн |
13+ | 22 грн |
100+ | 13.22 грн |
500+ | 11.48 грн |
1000+ | 7.81 грн |
2000+ | 7.19 грн |
5000+ | 6.78 грн |
ES2DALH |
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14000+ | 6.86 грн |
ES2DB |
Виробник: MDD
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 3000000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6000+ | 10.46 грн |
ES2DFL |
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 3.33 грн |
ES2DFL |
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.87 грн |
17+ | 16.95 грн |
100+ | 8.29 грн |
500+ | 6.49 грн |
1000+ | 4.51 грн |
2000+ | 3.91 грн |
5000+ | 3.57 грн |
ES2DFSH |
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14000+ | 6.86 грн |
ES2DFSH |
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 29.46 грн |
13+ | 22 грн |
100+ | 13.22 грн |
500+ | 11.48 грн |
1000+ | 7.81 грн |
2000+ | 7.19 грн |
5000+ | 6.78 грн |
ES2DG |
Виробник: SHIKUES
2A; 600V packaging: tape&reel ES2DG SHIKUES diode rectifying DP ES2DG SHK
кількість в упаковці: 500 шт
2A; 600V packaging: tape&reel ES2DG SHIKUES diode rectifying DP ES2DG SHK
кількість в упаковці: 500 шт
на замовлення 5000 шт:
термін постачання 28-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 0.96 грн |
ES2DH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 7.83 грн |
ES2DH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 28.74 грн |
13+ | 21.73 грн |
100+ | 13 грн |
500+ | 11.3 грн |
1000+ | 7.68 грн |
ES2DHE3_A/H |
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 18pF
Case: DO214AA; SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 18pF
Case: DO214AA; SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
на замовлення 400 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 58.87 грн |
15+ | 24.36 грн |
25+ | 21.45 грн |
44+ | 18.55 грн |
121+ | 17.54 грн |
ES2DHE3_A/H |
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 18pF
Case: DO214AA; SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 18pF
Case: DO214AA; SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 400 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 70.64 грн |
9+ | 30.35 грн |
25+ | 25.74 грн |
44+ | 22.26 грн |
121+ | 21.05 грн |
ES2DHE3_A/H |
Виробник: Vishay General Semiconductor
Rectifiers 2A,200V,20ns SMB, UF Rect, SMD
Rectifiers 2A,200V,20ns SMB, UF Rect, SMD
на замовлення 2320 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 36.73 грн |
10+ | 31.63 грн |
100+ | 19.06 грн |
500+ | 14.88 грн |
750+ | 12.09 грн |
2250+ | 10.83 грн |
9750+ | 10.43 грн |
ES2DHE3_A/H |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 1929 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 35.21 грн |
10+ | 28.92 грн |
100+ | 20.08 грн |
ES2DHE3_A/H |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
750+ | 16.28 грн |
1500+ | 12.74 грн |
ES2DHE3_A/I |
Виробник: Vishay
Diode Switching 200V 2A Automotive 2-Pin SMB T/R
Diode Switching 200V 2A Automotive 2-Pin SMB T/R
на замовлення 28800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6400+ | 14.26 грн |
ES2DHE3_A/I |
Виробник: Vishay
Diode Switching 200V 2A Automotive 2-Pin SMB T/R
Diode Switching 200V 2A Automotive 2-Pin SMB T/R
на замовлення 25600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6400+ | 13.88 грн |
ES2DHE3_A/I |
Виробник: Vishay
Diode Switching 200V 2A Automotive 2-Pin SMB T/R
Diode Switching 200V 2A Automotive 2-Pin SMB T/R
на замовлення 25600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6400+ | 14.76 грн |
ES2DHE3_A/I |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 7223 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 35.21 грн |
10+ | 28.92 грн |
100+ | 20.08 грн |
500+ | 14.71 грн |
1000+ | 11.96 грн |
ES2DHE3_A/I |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3200+ | 11.83 грн |
ES2DHE3_A/I |
Виробник: Vishay General Semiconductor
Rectifiers 2A,200V,20ns SMB, UF Rect, SMD
Rectifiers 2A,200V,20ns SMB, UF Rect, SMD
на замовлення 8884 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 36.73 грн |
10+ | 31.63 грн |
100+ | 19.06 грн |
500+ | 14.88 грн |
1000+ | 12.09 грн |
3200+ | 10.83 грн |
9600+ | 9.5 грн |
ES2DPX |
Виробник: Nexperia USA Inc.
Description: DIODE GP 200V 2A SOD128/CFP5
Packaging: Bulk
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
Description: DIODE GP 200V 2A SOD128/CFP5
Packaging: Bulk
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
на замовлення 87324 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2959+ | 6.73 грн |
ES2DSMA |
Виробник: Diotec Semiconductor
Rectifiers Diode, Superfast, SMA, 200V, 2A, 150C
Rectifiers Diode, Superfast, SMA, 200V, 2A, 150C
на замовлення 5631 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 43.24 грн |
11+ | 30.17 грн |
100+ | 18.33 грн |
500+ | 16.08 грн |
1000+ | 14.95 грн |
2500+ | 11.03 грн |
7500+ | 5.71 грн |
ES2DSMA |
Виробник: Diotec Semiconductor
Diode Switching 200V 3A 2-Pin SMA T/R
Diode Switching 200V 3A 2-Pin SMA T/R
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7500+ | 6.23 грн |
ES2DSMA |
Виробник: Diotec Semiconductor
ES2DSMA
ES2DSMA
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7500+ | 4.94 грн |
ES2DSMA |
Виробник: Diotec Electronics
Diode Switching 200V 3A 2-Pin SMA T/R
Diode Switching 200V 3A 2-Pin SMA T/R
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7500+ | 6.62 грн |
ES2DSMA |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 200V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
750+ | 64.84 грн |
1500+ | 24.76 грн |
2250+ | 16.51 грн |
3000+ | 11.62 грн |
3750+ | 9.29 грн |
7500+ | 9.2 грн |
ES2DTR |
Виробник: SMC DIODE SOLUTIONS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ir: 5uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.95V
Leakage current: 5µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ir: 5uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.95V
Leakage current: 5µA
Kind of package: reel; tape
на замовлення 3895 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
70+ | 5.44 грн |
80+ | 4.55 грн |
220+ | 3.74 грн |
600+ | 3.54 грн |
ES2DTR |
Виробник: SMC DIODE SOLUTIONS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ir: 5uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.95V
Leakage current: 5µA
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ir: 5uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.95V
Leakage current: 5µA
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 3895 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
45+ | 6.53 грн |
50+ | 5.67 грн |
220+ | 4.49 грн |
600+ | 4.25 грн |
5000+ | 4.09 грн |
ES2DV |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.3 грн |
13+ | 22.56 грн |
100+ | 15.65 грн |
500+ | 11.47 грн |
1000+ | 9.32 грн |
ES2DV |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 9.22 грн |
6000+ | 8.43 грн |
ES2DVH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 28.74 грн |
13+ | 21.73 грн |
100+ | 13 грн |
500+ | 11.3 грн |
1000+ | 7.68 грн |
ES2DVH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 7.83 грн |
6000+ | 7.22 грн |
ES2DVRX |
Виробник: Nexperia USA Inc.
Description: DIODE GEN PURP 200V 2A SOD123W
Packaging: Bulk
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
Description: DIODE GEN PURP 200V 2A SOD123W
Packaging: Bulk
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
на замовлення 58736 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6662+ | 3.36 грн |
ES2D_HF |
Виробник: Diodes Incorporated
Rectifiers Superfast Recovery Rectifier SMB T&R 3K
Rectifiers Superfast Recovery Rectifier SMB T&R 3K
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31 грн |
15+ | 21.24 грн |
100+ | 9.3 грн |
1000+ | 6.64 грн |
3000+ | 5.71 грн |
9000+ | 4.92 грн |
24000+ | 4.85 грн |
ES2D_R1_00001 |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Leakage current: 1µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1775 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.28 грн |
50+ | 7.47 грн |
100+ | 6.71 грн |
145+ | 5.6 грн |
400+ | 5.33 грн |
ES2D_R1_00001 |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Leakage current: 1µA
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Leakage current: 1µA
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 1775 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.34 грн |
30+ | 9.31 грн |
100+ | 8.05 грн |
145+ | 6.73 грн |
400+ | 6.39 грн |
1800+ | 6.31 грн |
3600+ | 6.14 грн |
ES2D_R1_00001 |
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 200V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1800+ | 7.83 грн |
3600+ | 6.75 грн |
5400+ | 6.6 грн |
ES2D_R1_00001 |
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 200V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 6654 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.62 грн |
13+ | 21.73 грн |
100+ | 10.93 грн |
500+ | 9.09 грн |
FES2DE-7 |
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 200V 2A F1A T&R
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: F1A (DO219AA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 2A F1A T&R
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: F1A (DO219AA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.8 грн |
FES2DE-7 |
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 200V 2A F1A T&R
Packaging: Cut Tape (CT)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: F1A (DO219AA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 2A F1A T&R
Packaging: Cut Tape (CT)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: F1A (DO219AA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 26.59 грн |
16+ | 17.92 грн |
100+ | 9.05 грн |
500+ | 7.53 грн |
1000+ | 5.86 грн |
FES2DEQ-7 |
Виробник: Diodes Incorporated
Rectifiers FRED GPP Rectifier DO-219AA T&R 3K
Rectifiers FRED GPP Rectifier DO-219AA T&R 3K
на замовлення 2997 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 30.3 грн |
13+ | 25.21 грн |
100+ | 15.28 грн |
500+ | 11.89 грн |
1000+ | 9.7 грн |
3000+ | 8.1 грн |
9000+ | 7.57 грн |
FES2DEQ-7 |
Виробник: Diodes Incorporated
Description: DIODE GP 200V 2A DO219AA T&R
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GP 200V 2A DO219AA T&R
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 9.45 грн |
6000+ | 8.64 грн |
9000+ | 8.02 грн |
30000+ | 7.35 грн |
FES2DEQ-7 |
Виробник: Diodes Incorporated
Description: DIODE GP 200V 2A DO219AA T&R
Packaging: Cut Tape (CT)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GP 200V 2A DO219AA T&R
Packaging: Cut Tape (CT)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 47960 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.02 грн |
13+ | 23.04 грн |
100+ | 16.04 грн |
500+ | 11.75 грн |
1000+ | 9.55 грн |