Результат пошуку "ES3D" : > 180
Вид перегляду :
Мінімальне замовлення: 7
Мінімальне замовлення: 7
Мінімальне замовлення: 3500
Мінімальне замовлення: 7
Мінімальне замовлення: 750
Мінімальне замовлення: 10
Мінімальне замовлення: 3000
Мінімальне замовлення: 3000
Мінімальне замовлення: 10
Мінімальне замовлення: 23
Мінімальне замовлення: 14
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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ES3DHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 3A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 516 шт: термін постачання 21-31 дні (днів) |
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ES3DHE3_A/I | Vishay General Semiconductor | Rectifiers 200 Volt 3.0A 20ns Glass Passivated |
на замовлення 2408 шт: термін постачання 21-30 дні (днів) |
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ES3DHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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ES3DHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 3A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 4980 шт: термін постачання 21-31 дні (днів) |
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ES3DSMB | Diotec Semiconductor |
Description: DIODE GEN PURP 200V 3A SMB Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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ES3DV | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ES3DV | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ES3DVH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ES3DVH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ES3D-13 |
на замовлення 6000 шт: термін постачання 14-28 дні (днів) |
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ES3D-19AT | VISHY |
на замовлення 45600 шт: термін постачання 14-28 дні (днів) |
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ES3D-7 |
на замовлення 7650 шт: термін постачання 14-28 дні (днів) |
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ES3D-E3/9AT | VISHAY |
на замовлення 7000 шт: термін постачання 14-28 дні (днів) |
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ES3D/9BT | VISHAY | DO214AB |
на замовлення 5070 шт: термін постачання 14-28 дні (днів) |
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ES3D/9T |
на замовлення 3500 шт: термін постачання 14-28 дні (днів) |
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ES3D/FSC | FSC | 08+; |
на замовлення 3000 шт: термін постачання 14-28 дні (днів) |
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ES3DB-13-F |
на замовлення 3080 шт: термін постачання 14-28 дні (днів) |
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CES-3-D1 | TE Connectivity / Raychem | Heat Shrink Cable Boots & End Caps HS BREAKOUT CES 2 LEGS, 15.24-4.32mm |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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CES-3-D1 | TE Connectivity Aerospace, Defense and Marine |
Description: CABLE GRIP 4.3-15.2MM Packaging: Bulk Features: Accomodates 2 Wires For Use With/Related Products: Cable, Wires Accessory Type: Seal, Heat Shrinkable Part Status: Active |
на замовлення 65 шт: термін постачання 21-31 дні (днів) |
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FES3DT TRTB | FAGOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 35ns; DO214AB; Ufmax: 900mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Reverse recovery time: 35ns Semiconductor structure: single diode Capacitance: 45pF Case: DO214AB Max. forward voltage: 0.9V Max. forward impulse current: 100A Leakage current: 0.1mA |
на замовлення 6977 шт: термін постачання 21-30 дні (днів) |
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FES3DT TRTB | FAGOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 35ns; DO214AB; Ufmax: 900mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Reverse recovery time: 35ns Semiconductor structure: single diode Capacitance: 45pF Case: DO214AB Max. forward voltage: 0.9V Max. forward impulse current: 100A Leakage current: 0.1mA кількість в упаковці: 1 шт |
на замовлення 6977 шт: термін постачання 7-14 дні (днів) |
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ES3D Код товару: 19191 |
TSC |
Діоди, діодні мости, стабілітрони > Діоди супершвидкі Корпус: SMC/DO-214AB Vrr, V: 200 V Iav, A: 3 A |
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ES3D-E3/57T Код товару: 108167 |
Діоди, діодні мости, стабілітрони > Діоди супершвидкі |
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ES3D-E3/9AT Код товару: 49986 |
Різні комплектуючі > Різні комплектуючі 2 |
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Механічний 3D пазл "Модель Комбайн Код товару: 109325 |
Модульні елементи > Конструктори, набори для збирання електронних пристроїв |
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Механічний 3D пазл "Модель Трамвай з рейками Код товару: 109324 |
Модульні елементи > Конструктори, набори для збирання електронних пристроїв |
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ES3D | ON Semiconductor | Rectifier Diode Switching 200V 3A 30ns 2-Pin SMC T/R |
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ES3D | Diotec Semiconductor | Diode Switching 200V 3A 2-Pin SMC T/R |
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ES3D | Diotec Semiconductor |
Description: DIODE GEN PURP 200V 3A SMC Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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ES3D | Diotec Semiconductor | Rectifier Diode Switching 200V 3A 20ns 2-Pin SMC T/R |
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ES3D | Good-Ark | Rectifier Diode Switching 200V 3A 35ns 2-Pin SMC |
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ES3D | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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ES3D | ON Semiconductor | Rectifier Diode Switching 200V 3A 30ns 2-Pin SMC T/R |
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ES3D M6 | Taiwan Semiconductor | Rectifiers 35ns, 3A, 200V, Super Fast Recovery Rectifier |
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ES3D M6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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ES3D R6 | Taiwan Semiconductor | Rectifier Diode Switching 200V 3A 35ns 2-Pin SMC T/R |
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ES3D R6 | Taiwan Semiconductor | Rectifiers 35ns 3A 200V Super F ast Recovery Rect |
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ES3D R6G | Taiwan Semiconductor | Diode Switching 200V 3A 2-Pin SMC T/R |
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ES3D R6G | Taiwan Semiconductor | Rectifiers 35ns, 3A, 200V, Super Fast Recovery Rectifier |
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ES3D R7 | Taiwan Semiconductor | Rectifier Diode Switching 200V 3A 35ns 2-Pin SMC T/R |
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ES3D R7 | Taiwan Semiconductor | Rectifier Diode Switching 200V 3A 35ns 2-Pin SMC T/R |
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ES3D R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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ES3D R7G | Taiwan Semiconductor | Rectifiers 35ns, 3A, 200V, Super Fast Recovery Rectifier |
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ES3D R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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ES3D R7G | Taiwan Semiconductor | Rectifier Diode Switching 200V 3A 35ns 2-Pin SMC T/R |
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ES3D V6G | Taiwan Semiconductor | Rectifiers 35ns 3A 200V Super F ast Recovery Rect |
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ES3D V6G | Taiwan Semiconductor | Rectifier Diode Switching 200V 3A 35ns 2-Pin SMC T/R |
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ES3D V7G | Taiwan Semiconductor | Rectifier Diode Switching 200V 3A 35ns 2-Pin SMC |
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ES3D V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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ES3D V7G | Taiwan Semiconductor | Rectifiers 35ns, 3A, 200V, Super Fast Recovery Rectifier |
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ES3D V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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ES3D-13 | Diodes Incorporated |
Description: DIODE GEN PURP 200V 3A SMC Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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ES3D-13 | Diodes Incorporated |
Description: DIODE GEN PURP 200V 3A SMC Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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ES3D-13-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMC; Ufmax: 0.9V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; superfast switching Capacitance: 45pF Case: SMC Max. forward voltage: 0.9V Max. forward impulse current: 100A Kind of package: reel; tape |
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ES3D-13-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMC; Ufmax: 0.9V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; superfast switching Capacitance: 45pF Case: SMC Max. forward voltage: 0.9V Max. forward impulse current: 100A Kind of package: reel; tape кількість в упаковці: 3000 шт |
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ES3D-13-F | Diodes Zetex | Rectifier Diode Switching 200V 3A 25ns 2-Pin SMC T/R |
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ES3D-13-F | Diodes Inc | Rectifier Diode Switching 200V 3A 25ns 2-Pin SMC T/R |
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ES3D-A | Taiwan Semiconductor Corporation |
Description: 35NS, 3A, 200V, SUPER FAST RECOV Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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ES3D-A | Taiwan Semiconductor | Rectifiers 35ns, 3A, 200V, Super Fast Recovery Rectifier |
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ES3D-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 20ns; SMA; Ufmax: 0.9V; Ifsm: 115A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Max. load current: 15A Reverse recovery time: 20ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Capacitance: 20pF Case: SMA Max. forward voltage: 0.9V Max. forward impulse current: 115A Leakage current: 0.5mA Kind of package: reel; tape Application: automotive industry |
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ES3DHE3_A/H |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 516 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 47.42 грн |
10+ | 39.3 грн |
100+ | 27.23 грн |
ES3DHE3_A/I |
Виробник: Vishay General Semiconductor
Rectifiers 200 Volt 3.0A 20ns Glass Passivated
Rectifiers 200 Volt 3.0A 20ns Glass Passivated
на замовлення 2408 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 50.45 грн |
10+ | 43.16 грн |
100+ | 26.04 грн |
500+ | 21.72 грн |
1000+ | 18.47 грн |
3500+ | 16.47 грн |
7000+ | 15.54 грн |
ES3DHE3_A/I |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3500+ | 17.91 грн |
ES3DHE3_A/I |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 47.42 грн |
10+ | 39.3 грн |
100+ | 27.23 грн |
500+ | 21.36 грн |
1000+ | 18.18 грн |
ES3DSMB |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 200V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
750+ | 62.78 грн |
1500+ | 44 грн |
3000+ | 28.89 грн |
6000+ | 25.59 грн |
ES3DV |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.62 грн |
11+ | 26.22 грн |
100+ | 18.24 грн |
500+ | 13.36 грн |
1000+ | 10.86 грн |
ES3DV |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 10.74 грн |
ES3DVH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 10.74 грн |
ES3DVH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.62 грн |
11+ | 26.22 грн |
100+ | 18.24 грн |
500+ | 13.36 грн |
1000+ | 10.86 грн |
CES-3-D1 |
Виробник: TE Connectivity / Raychem
Heat Shrink Cable Boots & End Caps HS BREAKOUT CES 2 LEGS, 15.24-4.32mm
Heat Shrink Cable Boots & End Caps HS BREAKOUT CES 2 LEGS, 15.24-4.32mm
на замовлення 14 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4166.23 грн |
10+ | 3769.07 грн |
20+ | 3189.77 грн |
60+ | 3131.31 грн |
100+ | 2876.9 грн |
260+ | 2754.68 грн |
500+ | 2730.76 грн |
CES-3-D1 |
Виробник: TE Connectivity Aerospace, Defense and Marine
Description: CABLE GRIP 4.3-15.2MM
Packaging: Bulk
Features: Accomodates 2 Wires
For Use With/Related Products: Cable, Wires
Accessory Type: Seal, Heat Shrinkable
Part Status: Active
Description: CABLE GRIP 4.3-15.2MM
Packaging: Bulk
Features: Accomodates 2 Wires
For Use With/Related Products: Cable, Wires
Accessory Type: Seal, Heat Shrinkable
Part Status: Active
на замовлення 65 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3889.5 грн |
10+ | 3436.91 грн |
FES3DT TRTB |
Виробник: FAGOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; DO214AB; Ufmax: 900mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Capacitance: 45pF
Case: DO214AB
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Leakage current: 0.1mA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; DO214AB; Ufmax: 900mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Capacitance: 45pF
Case: DO214AB
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Leakage current: 0.1mA
на замовлення 6977 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 16.92 грн |
32+ | 11.14 грн |
90+ | 9.07 грн |
247+ | 8.57 грн |
3500+ | 8.23 грн |
FES3DT TRTB |
Виробник: FAGOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; DO214AB; Ufmax: 900mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Capacitance: 45pF
Case: DO214AB
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Leakage current: 0.1mA
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; DO214AB; Ufmax: 900mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Capacitance: 45pF
Case: DO214AB
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Leakage current: 0.1mA
кількість в упаковці: 1 шт
на замовлення 6977 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 20.3 грн |
19+ | 13.88 грн |
90+ | 10.89 грн |
247+ | 10.29 грн |
3500+ | 9.88 грн |
ES3D Код товару: 19191 |
Виробник: TSC
Діоди, діодні мости, стабілітрони > Діоди супершвидкі
Корпус: SMC/DO-214AB
Vrr, V: 200 V
Iav, A: 3 A
Діоди, діодні мости, стабілітрони > Діоди супершвидкі
Корпус: SMC/DO-214AB
Vrr, V: 200 V
Iav, A: 3 A
товар відсутній
Механічний 3D пазл "Модель Комбайн Код товару: 109325 |
товар відсутній
Механічний 3D пазл "Модель Трамвай з рейками Код товару: 109324 |
товар відсутній
ES3D |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 200V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
ES3D |
Виробник: Diotec Semiconductor
Rectifier Diode Switching 200V 3A 20ns 2-Pin SMC T/R
Rectifier Diode Switching 200V 3A 20ns 2-Pin SMC T/R
товар відсутній
ES3D |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
ES3D M6 |
Виробник: Taiwan Semiconductor
Rectifiers 35ns, 3A, 200V, Super Fast Recovery Rectifier
Rectifiers 35ns, 3A, 200V, Super Fast Recovery Rectifier
товар відсутній
ES3D M6G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
ES3D R6 |
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 200V 3A 35ns 2-Pin SMC T/R
Rectifier Diode Switching 200V 3A 35ns 2-Pin SMC T/R
товар відсутній
ES3D R6 |
Виробник: Taiwan Semiconductor
Rectifiers 35ns 3A 200V Super F ast Recovery Rect
Rectifiers 35ns 3A 200V Super F ast Recovery Rect
товар відсутній
ES3D R6G |
Виробник: Taiwan Semiconductor
Rectifiers 35ns, 3A, 200V, Super Fast Recovery Rectifier
Rectifiers 35ns, 3A, 200V, Super Fast Recovery Rectifier
товар відсутній
ES3D R7 |
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 200V 3A 35ns 2-Pin SMC T/R
Rectifier Diode Switching 200V 3A 35ns 2-Pin SMC T/R
товар відсутній
ES3D R7 |
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 200V 3A 35ns 2-Pin SMC T/R
Rectifier Diode Switching 200V 3A 35ns 2-Pin SMC T/R
товар відсутній
ES3D R7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
ES3D R7G |
Виробник: Taiwan Semiconductor
Rectifiers 35ns, 3A, 200V, Super Fast Recovery Rectifier
Rectifiers 35ns, 3A, 200V, Super Fast Recovery Rectifier
товар відсутній
ES3D R7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
ES3D R7G |
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 200V 3A 35ns 2-Pin SMC T/R
Rectifier Diode Switching 200V 3A 35ns 2-Pin SMC T/R
товар відсутній
ES3D V6G |
Виробник: Taiwan Semiconductor
Rectifiers 35ns 3A 200V Super F ast Recovery Rect
Rectifiers 35ns 3A 200V Super F ast Recovery Rect
товар відсутній
ES3D V6G |
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 200V 3A 35ns 2-Pin SMC T/R
Rectifier Diode Switching 200V 3A 35ns 2-Pin SMC T/R
товар відсутній
ES3D V7G |
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 200V 3A 35ns 2-Pin SMC
Rectifier Diode Switching 200V 3A 35ns 2-Pin SMC
товар відсутній
ES3D V7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
ES3D V7G |
Виробник: Taiwan Semiconductor
Rectifiers 35ns, 3A, 200V, Super Fast Recovery Rectifier
Rectifiers 35ns, 3A, 200V, Super Fast Recovery Rectifier
товар відсутній
ES3D V7G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
ES3D-13 |
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 200V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
ES3D-13 |
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 200V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
ES3D-13-F |
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMC; Ufmax: 0.9V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMC; Ufmax: 0.9V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Kind of package: reel; tape
товар відсутній
ES3D-13-F |
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMC; Ufmax: 0.9V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Kind of package: reel; tape
кількість в упаковці: 3000 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMC; Ufmax: 0.9V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Kind of package: reel; tape
кількість в упаковці: 3000 шт
товар відсутній
ES3D-13-F |
Виробник: Diodes Zetex
Rectifier Diode Switching 200V 3A 25ns 2-Pin SMC T/R
Rectifier Diode Switching 200V 3A 25ns 2-Pin SMC T/R
товар відсутній
ES3D-A |
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 3A, 200V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: 35NS, 3A, 200V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
ES3D-A |
Виробник: Taiwan Semiconductor
Rectifiers 35ns, 3A, 200V, Super Fast Recovery Rectifier
Rectifiers 35ns, 3A, 200V, Super Fast Recovery Rectifier
товар відсутній
ES3D-AQ |
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 20ns; SMA; Ufmax: 0.9V; Ifsm: 115A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Max. load current: 15A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 20pF
Case: SMA
Max. forward voltage: 0.9V
Max. forward impulse current: 115A
Leakage current: 0.5mA
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 20ns; SMA; Ufmax: 0.9V; Ifsm: 115A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Max. load current: 15A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 20pF
Case: SMA
Max. forward voltage: 0.9V
Max. forward impulse current: 115A
Leakage current: 0.5mA
Kind of package: reel; tape
Application: automotive industry
товар відсутній