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Мінімальне замовлення: 30
Мінімальне замовлення: 20
Мінімальне замовлення: 40
Мінімальне замовлення: 29
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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TAS3218IPZPR | Texas Instruments |
Description: IC DGTL AUDIO PROCESSOR 100HTQFP Packaging: Bulk Package / Case: 100-TQFP Exposed Pad Mounting Type: Surface Mount Interface: I2C Type: Fixed Point Operating Temperature: -40°C ~ 85°C (TA) On-Chip RAM: 48.59kB Voltage - I/O: 3.30V Voltage - Core: 3.30V Clock Rate: 135MHz Supplier Device Package: 100-HTQFP (14x14) |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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BAS321,115 | NXP/Nexperia/We-En | Випрямний діод SMD; Io, A = 0,25; Uзвор, В = 200; Uf (max), В = 200; If, А = 0,2; C, пФ @ Ur, В; F, МГц = 2 @ 0; 1 кГц; trr, нс = 50 мс; Тексп, °C = -65...+150; Час станд. відн., (нс)/струм, мА = 500 мс; I, мкА @ Ur, В = 0,1 @ 200; SOD-323 |
на замовлення 20 шт: термін постачання 2-3 дні (днів) |
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BAS321/A7 | NXP | 0916+ SOT-0805 |
на замовлення 3000 шт: термін постачання 14-28 дні (днів) |
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BAS321/T1 | BAS321/T1 PBF Диоды Fast recovery |
на замовлення 93 шт: термін постачання 2-3 дні (днів) |
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DAS321SA | 19.680MHZ |
на замовлення 2000 шт: термін постачання 14-28 дні (днів) |
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DAS321SA | 19.680MHZ |
на замовлення 2000 шт: термін постачання 14-28 дні (днів) |
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MTV212AS32-150 |
на замовлення 5750 шт: термін постачання 14-28 дні (днів) |
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TAS3218IPZP | TI |
на замовлення 117 шт: термін постачання 14-28 дні (днів) |
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TAS3218IPZP | TI | 10+ HTQFP100 |
на замовлення 5 шт: термін постачання 14-28 дні (днів) |
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BAS32L,115 | Nexperia | Diodes - General Purpose, Power, Switching BAS32L/SOD80/LLDS |
на замовлення 119228 шт: термін постачання 21-30 дні (днів) |
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BAS32L,135 | Nexperia | Diodes - General Purpose, Power, Switching BAS32L/SOD80/LLDS |
на замовлення 6829 шт: термін постачання 21-30 дні (днів) |
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AS3210015 Код товару: 164261 |
Пасивні компоненти > Термістори |
товар відсутній
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BAS321.115 Код товару: 79864 |
Різні комплектуючі > Різні комплектуючі 3 |
товар відсутній
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AS-321 | Amgis, LLC |
Description: CURR SENSE XFMR 15A 1:100 VRT Packaging: Bulk Size / Dimension: 0.701" L x 0.902" W (17.80mm x 22.90mm) Height - Seated (Max): 0.701" (17.80mm) |
товар відсутній |
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AS321 | Diodes Incorporated | Operational Amplifiers - Op Amps |
товар відсутній |
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AS321KTR-E1 | Diodes Inc | Op Amp Single Low Power Amplifier ±18V/36V 5-Pin SOT-25 T/R |
товар відсутній |
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AS321KTR-E1 | Diodes Zetex | Op Amp Single Low Power Amplifier ±18V/36V 5-Pin SOT-25 T/R |
товар відсутній |
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BAS321,115 | Nexperia USA Inc. |
Description: DIODE GEN PURP 200V 250MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
товар відсутній |
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BAS321,135 | Nexperia USA Inc. |
Description: DIODE GEN PURP 200V 250MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
товар відсутній |
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BAS321-HF | Comchip Technology |
Description: DIODE SWITCHING 250V 200MA 250MW Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 µs Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
товар відсутній |
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BAS321-QF | Nexperia USA Inc. |
Description: DIODE GEN PURP 200V 250MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Qualification: AEC-Q101 |
товар відсутній |
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BAS321-QF | Nexperia | Diodes - General Purpose, Power, Switching BAS321-Q/SOD323/SOD2 |
товар відсутній |
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BAS321-QX | Nexperia USA Inc. |
Description: DIODE GEN PURP 200V 250MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Qualification: AEC-Q101 |
товар відсутній |
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BAS321-QZ | Nexperia USA Inc. |
Description: BAS321-Q/SOD323/SOD2 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Qualification: AEC-Q101 |
товар відсутній |
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BAS321-QZ | Nexperia | Diodes - General Purpose, Power, Switching BAS321-Q/SOD323/SOD2 |
товар відсутній |
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BAS321/8F | Nexperia | Diodes - General Purpose, Power, Switching BAS321/SOD323/SOD2 |
товар відсутній |
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BAS321/8F | Nexperia USA Inc. |
Description: DIODE GEN PURP 200V 250MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
товар відсутній |
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BAS321/8X | Nexperia | Diodes - General Purpose, Power, Switching Bipolar Discretes SOD323 |
товар відсутній |
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BAS321/8X | Nexperia USA Inc. |
Description: DIODE GEN PURP 200V 250MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
товар відсутній |
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BAS321/ZLF | NXP USA Inc. |
Description: DIODE GEN PURP 200V 250MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
товар відсутній |
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BAS321/ZLX | NXP USA Inc. |
Description: DIODE GEN PURP 200V 250MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
товар відсутній |
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BAS321J-Q | Nexperia | Nexperia DIODE-SML SIGNAL SOD323F/SOD32 |
товар відсутній |
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BAS321J-QF | Nexperia USA Inc. |
Description: BAS321J-Q/SOD323F/SOD323F Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323F Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Qualification: AEC-Q101 |
товар відсутній |
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BAS321J-QF | Nexperia | Diodes - General Purpose, Power, Switching DIODE-SML SIGNAL SOD323F/SOD32 |
товар відсутній |
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BAS321J-QX | Nexperia | Diodes - General Purpose, Power, Switching DIODE-SML SIGNAL SOD323F/SOD32 |
товар відсутній |
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HRPG-AS32#13F | Broadcom / Avago | Encoders RPG SMT 32CPR |
товар відсутній |
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HRPG-AS32#14C | Broadcom / Avago | Encoders RPG SMT 32CPR |
товар відсутній |
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HRPG-AS32#14R | Broadcom / Avago | Encoders RPG SMT 32CPR |
товар відсутній |
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SAS3210RB | Apex Tool Group |
Description: REPLACLEMENT BLADE FOR SAS3210 Packaging: Bulk Type: Accessory, Replacement Blade Cable Type: 10 ~ 32 AWG |
товар відсутній |
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TAS3218IPZP | Texas Instruments |
Description: IC DGTL AUDIO PROCESSOR 100-TQFP Packaging: Tray Package / Case: 100-TQFP Exposed Pad Mounting Type: Surface Mount Interface: I2C Type: Fixed Point Operating Temperature: -40°C ~ 85°C (TA) On-Chip RAM: 48.59kB Voltage - I/O: 3.30V Voltage - Core: 3.30V Clock Rate: 135MHz Supplier Device Package: 100-HTQFP (14x14) |
товар відсутній |
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TAS3218IPZPR | Texas Instruments |
Description: IC DGTL AUDIO PROCESSOR 100HTQFP Packaging: Tape & Reel (TR) Package / Case: 100-TQFP Exposed Pad Mounting Type: Surface Mount Interface: I2C Type: Fixed Point Operating Temperature: -40°C ~ 85°C (TA) On-Chip RAM: 48.59kB Voltage - I/O: 3.30V Voltage - Core: 3.30V Clock Rate: 135MHz Supplier Device Package: 100-HTQFP (14x14) |
товар відсутній |
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TAS3218PZPR | Texas Instruments |
Description: IC DGTL AUDIO PROCESSOR 100HTQFP Packaging: Tape & Reel (TR) Package / Case: 100-TQFP Exposed Pad Mounting Type: Surface Mount Interface: I2C Type: Fixed Point Operating Temperature: -40°C ~ 85°C (TA) On-Chip RAM: 48.59kB Voltage - I/O: 3.30V Voltage - Core: 3.30V Clock Rate: 135MHz Supplier Device Package: 100-HTQFP (14x14) |
товар відсутній |
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THAS321M150AB0C | Cornell Dubilier Electronics (CDE) |
Description: CAP ALUM 320UF 20% 150V FLATPACK Packaging: Bulk Tolerance: ±20% Package / Case: FlatPack Size / Dimension: 1.807" L x 1.000" W (45.90mm x 25.40mm) Polarization: Polar Mounting Type: Through Hole Operating Temperature: -55°C ~ 105°C Applications: General Purpose Lead Spacing: 0.394" (10.00mm) ESR (Equivalent Series Resistance): 580mOhm @ 120Hz Lifetime @ Temp.: 5000 Hrs @ 105°C Height - Seated (Max): 0.366" (9.30mm) Capacitance: 320 µF Voltage - Rated: 150 V Ripple Current @ Low Frequency: 800 mA @ 120 Hz Ripple Current @ High Frequency: 1.36 A @ 20 kHz |
товар відсутній |
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THAS321M150AB0C | Cornell Dubilier - CDE | Aluminium Electrolytic Capacitors - Radial Leaded 320uF 20% 150V Aluminum Capacitor |
товар відсутній |
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THAS321M150AB1C | Cornell Dubilier Electronics (CDE) |
Description: CAP ALUM 320UF 20% 150V FLATPACK Packaging: Bulk Tolerance: ±20% Package / Case: FlatPack Size / Dimension: 1.807" L x 1.000" W (45.90mm x 25.40mm) Polarization: Polar Mounting Type: Through Hole Operating Temperature: -55°C ~ 105°C Applications: General Purpose Lead Spacing: 0.394" (10.00mm) ESR (Equivalent Series Resistance): 580mOhm @ 120Hz Lifetime @ Temp.: 5000 Hrs @ 105°C Height - Seated (Max): 0.366" (9.30mm) Capacitance: 320 µF Voltage - Rated: 150 V Ripple Current @ Low Frequency: 800 mA @ 120 Hz Ripple Current @ High Frequency: 1.36 A @ 20 kHz |
товар відсутній |
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THAS321M150AB1C | Cornell Dubilier - CDE | Aluminium Electrolytic Capacitors - Radial Leaded THINPACK |
товар відсутній |
TAS3218IPZPR |
Виробник: Texas Instruments
Description: IC DGTL AUDIO PROCESSOR 100HTQFP
Packaging: Bulk
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Fixed Point
Operating Temperature: -40°C ~ 85°C (TA)
On-Chip RAM: 48.59kB
Voltage - I/O: 3.30V
Voltage - Core: 3.30V
Clock Rate: 135MHz
Supplier Device Package: 100-HTQFP (14x14)
Description: IC DGTL AUDIO PROCESSOR 100HTQFP
Packaging: Bulk
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Fixed Point
Operating Temperature: -40°C ~ 85°C (TA)
On-Chip RAM: 48.59kB
Voltage - I/O: 3.30V
Voltage - Core: 3.30V
Clock Rate: 135MHz
Supplier Device Package: 100-HTQFP (14x14)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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30+ | 684.96 грн |
BAS321,115 |
Виробник: NXP/Nexperia/We-En
Випрямний діод SMD; Io, A = 0,25; Uзвор, В = 200; Uf (max), В = 200; If, А = 0,2; C, пФ @ Ur, В; F, МГц = 2 @ 0; 1 кГц; trr, нс = 50 мс; Тексп, °C = -65...+150; Час станд. відн., (нс)/струм, мА = 500 мс; I, мкА @ Ur, В = 0,1 @ 200; SOD-323
Випрямний діод SMD; Io, A = 0,25; Uзвор, В = 200; Uf (max), В = 200; If, А = 0,2; C, пФ @ Ur, В; F, МГц = 2 @ 0; 1 кГц; trr, нс = 50 мс; Тексп, °C = -65...+150; Час станд. відн., (нс)/струм, мА = 500 мс; I, мкА @ Ur, В = 0,1 @ 200; SOD-323
на замовлення 20 шт:
термін постачання 2-3 дні (днів)Кількість | Ціна без ПДВ |
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20+ | 31.2 грн |
100+ | 6.24 грн |
BAS32L,115 |
Виробник: Nexperia
Diodes - General Purpose, Power, Switching BAS32L/SOD80/LLDS
Diodes - General Purpose, Power, Switching BAS32L/SOD80/LLDS
на замовлення 119228 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
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40+ | 7.94 грн |
54+ | 5.76 грн |
122+ | 2.2 грн |
1000+ | 1.47 грн |
2500+ | 0.93 грн |
10000+ | 0.8 грн |
25000+ | 0.73 грн |
BAS32L,135 |
Виробник: Nexperia
Diodes - General Purpose, Power, Switching BAS32L/SOD80/LLDS
Diodes - General Purpose, Power, Switching BAS32L/SOD80/LLDS
на замовлення 6829 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
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29+ | 10.9 грн |
44+ | 7.14 грн |
100+ | 2.67 грн |
1000+ | 1.54 грн |
2500+ | 1.4 грн |
10000+ | 1.13 грн |
20000+ | 1 грн |
AS-321 |
Виробник: Amgis, LLC
Description: CURR SENSE XFMR 15A 1:100 VRT
Packaging: Bulk
Size / Dimension: 0.701" L x 0.902" W (17.80mm x 22.90mm)
Height - Seated (Max): 0.701" (17.80mm)
Description: CURR SENSE XFMR 15A 1:100 VRT
Packaging: Bulk
Size / Dimension: 0.701" L x 0.902" W (17.80mm x 22.90mm)
Height - Seated (Max): 0.701" (17.80mm)
товар відсутній
AS321KTR-E1 |
Виробник: Diodes Inc
Op Amp Single Low Power Amplifier ±18V/36V 5-Pin SOT-25 T/R
Op Amp Single Low Power Amplifier ±18V/36V 5-Pin SOT-25 T/R
товар відсутній
AS321KTR-E1 |
Виробник: Diodes Zetex
Op Amp Single Low Power Amplifier ±18V/36V 5-Pin SOT-25 T/R
Op Amp Single Low Power Amplifier ±18V/36V 5-Pin SOT-25 T/R
товар відсутній
BAS321,115 |
Виробник: Nexperia USA Inc.
Description: DIODE GEN PURP 200V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE GEN PURP 200V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
товар відсутній
BAS321,135 |
Виробник: Nexperia USA Inc.
Description: DIODE GEN PURP 200V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE GEN PURP 200V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
товар відсутній
BAS321-HF |
Виробник: Comchip Technology
Description: DIODE SWITCHING 250V 200MA 250MW
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 µs
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE SWITCHING 250V 200MA 250MW
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 µs
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
товар відсутній
BAS321-QF |
Виробник: Nexperia USA Inc.
Description: DIODE GEN PURP 200V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
товар відсутній
BAS321-QF |
Виробник: Nexperia
Diodes - General Purpose, Power, Switching BAS321-Q/SOD323/SOD2
Diodes - General Purpose, Power, Switching BAS321-Q/SOD323/SOD2
товар відсутній
BAS321-QX |
Виробник: Nexperia USA Inc.
Description: DIODE GEN PURP 200V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
товар відсутній
BAS321-QZ |
Виробник: Nexperia USA Inc.
Description: BAS321-Q/SOD323/SOD2
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
Description: BAS321-Q/SOD323/SOD2
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
товар відсутній
BAS321-QZ |
Виробник: Nexperia
Diodes - General Purpose, Power, Switching BAS321-Q/SOD323/SOD2
Diodes - General Purpose, Power, Switching BAS321-Q/SOD323/SOD2
товар відсутній
BAS321/8F |
Виробник: Nexperia
Diodes - General Purpose, Power, Switching BAS321/SOD323/SOD2
Diodes - General Purpose, Power, Switching BAS321/SOD323/SOD2
товар відсутній
BAS321/8F |
Виробник: Nexperia USA Inc.
Description: DIODE GEN PURP 200V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE GEN PURP 200V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
товар відсутній
BAS321/8X |
Виробник: Nexperia
Diodes - General Purpose, Power, Switching Bipolar Discretes SOD323
Diodes - General Purpose, Power, Switching Bipolar Discretes SOD323
товар відсутній
BAS321/8X |
Виробник: Nexperia USA Inc.
Description: DIODE GEN PURP 200V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE GEN PURP 200V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
товар відсутній
BAS321/ZLF |
Виробник: NXP USA Inc.
Description: DIODE GEN PURP 200V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE GEN PURP 200V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
товар відсутній
BAS321/ZLX |
Виробник: NXP USA Inc.
Description: DIODE GEN PURP 200V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE GEN PURP 200V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
товар відсутній
BAS321J-QF |
Виробник: Nexperia USA Inc.
Description: BAS321J-Q/SOD323F/SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
Description: BAS321J-Q/SOD323F/SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
товар відсутній
BAS321J-QF |
Виробник: Nexperia
Diodes - General Purpose, Power, Switching DIODE-SML SIGNAL SOD323F/SOD32
Diodes - General Purpose, Power, Switching DIODE-SML SIGNAL SOD323F/SOD32
товар відсутній
BAS321J-QX |
Виробник: Nexperia
Diodes - General Purpose, Power, Switching DIODE-SML SIGNAL SOD323F/SOD32
Diodes - General Purpose, Power, Switching DIODE-SML SIGNAL SOD323F/SOD32
товар відсутній
SAS3210RB |
Виробник: Apex Tool Group
Description: REPLACLEMENT BLADE FOR SAS3210
Packaging: Bulk
Type: Accessory, Replacement Blade
Cable Type: 10 ~ 32 AWG
Description: REPLACLEMENT BLADE FOR SAS3210
Packaging: Bulk
Type: Accessory, Replacement Blade
Cable Type: 10 ~ 32 AWG
товар відсутній
TAS3218IPZP |
Виробник: Texas Instruments
Description: IC DGTL AUDIO PROCESSOR 100-TQFP
Packaging: Tray
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Fixed Point
Operating Temperature: -40°C ~ 85°C (TA)
On-Chip RAM: 48.59kB
Voltage - I/O: 3.30V
Voltage - Core: 3.30V
Clock Rate: 135MHz
Supplier Device Package: 100-HTQFP (14x14)
Description: IC DGTL AUDIO PROCESSOR 100-TQFP
Packaging: Tray
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Fixed Point
Operating Temperature: -40°C ~ 85°C (TA)
On-Chip RAM: 48.59kB
Voltage - I/O: 3.30V
Voltage - Core: 3.30V
Clock Rate: 135MHz
Supplier Device Package: 100-HTQFP (14x14)
товар відсутній
TAS3218IPZPR |
Виробник: Texas Instruments
Description: IC DGTL AUDIO PROCESSOR 100HTQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Fixed Point
Operating Temperature: -40°C ~ 85°C (TA)
On-Chip RAM: 48.59kB
Voltage - I/O: 3.30V
Voltage - Core: 3.30V
Clock Rate: 135MHz
Supplier Device Package: 100-HTQFP (14x14)
Description: IC DGTL AUDIO PROCESSOR 100HTQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Fixed Point
Operating Temperature: -40°C ~ 85°C (TA)
On-Chip RAM: 48.59kB
Voltage - I/O: 3.30V
Voltage - Core: 3.30V
Clock Rate: 135MHz
Supplier Device Package: 100-HTQFP (14x14)
товар відсутній
TAS3218PZPR |
Виробник: Texas Instruments
Description: IC DGTL AUDIO PROCESSOR 100HTQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Fixed Point
Operating Temperature: -40°C ~ 85°C (TA)
On-Chip RAM: 48.59kB
Voltage - I/O: 3.30V
Voltage - Core: 3.30V
Clock Rate: 135MHz
Supplier Device Package: 100-HTQFP (14x14)
Description: IC DGTL AUDIO PROCESSOR 100HTQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Fixed Point
Operating Temperature: -40°C ~ 85°C (TA)
On-Chip RAM: 48.59kB
Voltage - I/O: 3.30V
Voltage - Core: 3.30V
Clock Rate: 135MHz
Supplier Device Package: 100-HTQFP (14x14)
товар відсутній
THAS321M150AB0C |
Виробник: Cornell Dubilier Electronics (CDE)
Description: CAP ALUM 320UF 20% 150V FLATPACK
Packaging: Bulk
Tolerance: ±20%
Package / Case: FlatPack
Size / Dimension: 1.807" L x 1.000" W (45.90mm x 25.40mm)
Polarization: Polar
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 105°C
Applications: General Purpose
Lead Spacing: 0.394" (10.00mm)
ESR (Equivalent Series Resistance): 580mOhm @ 120Hz
Lifetime @ Temp.: 5000 Hrs @ 105°C
Height - Seated (Max): 0.366" (9.30mm)
Capacitance: 320 µF
Voltage - Rated: 150 V
Ripple Current @ Low Frequency: 800 mA @ 120 Hz
Ripple Current @ High Frequency: 1.36 A @ 20 kHz
Description: CAP ALUM 320UF 20% 150V FLATPACK
Packaging: Bulk
Tolerance: ±20%
Package / Case: FlatPack
Size / Dimension: 1.807" L x 1.000" W (45.90mm x 25.40mm)
Polarization: Polar
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 105°C
Applications: General Purpose
Lead Spacing: 0.394" (10.00mm)
ESR (Equivalent Series Resistance): 580mOhm @ 120Hz
Lifetime @ Temp.: 5000 Hrs @ 105°C
Height - Seated (Max): 0.366" (9.30mm)
Capacitance: 320 µF
Voltage - Rated: 150 V
Ripple Current @ Low Frequency: 800 mA @ 120 Hz
Ripple Current @ High Frequency: 1.36 A @ 20 kHz
товар відсутній
THAS321M150AB0C |
Виробник: Cornell Dubilier - CDE
Aluminium Electrolytic Capacitors - Radial Leaded 320uF 20% 150V Aluminum Capacitor
Aluminium Electrolytic Capacitors - Radial Leaded 320uF 20% 150V Aluminum Capacitor
товар відсутній
THAS321M150AB1C |
Виробник: Cornell Dubilier Electronics (CDE)
Description: CAP ALUM 320UF 20% 150V FLATPACK
Packaging: Bulk
Tolerance: ±20%
Package / Case: FlatPack
Size / Dimension: 1.807" L x 1.000" W (45.90mm x 25.40mm)
Polarization: Polar
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 105°C
Applications: General Purpose
Lead Spacing: 0.394" (10.00mm)
ESR (Equivalent Series Resistance): 580mOhm @ 120Hz
Lifetime @ Temp.: 5000 Hrs @ 105°C
Height - Seated (Max): 0.366" (9.30mm)
Capacitance: 320 µF
Voltage - Rated: 150 V
Ripple Current @ Low Frequency: 800 mA @ 120 Hz
Ripple Current @ High Frequency: 1.36 A @ 20 kHz
Description: CAP ALUM 320UF 20% 150V FLATPACK
Packaging: Bulk
Tolerance: ±20%
Package / Case: FlatPack
Size / Dimension: 1.807" L x 1.000" W (45.90mm x 25.40mm)
Polarization: Polar
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 105°C
Applications: General Purpose
Lead Spacing: 0.394" (10.00mm)
ESR (Equivalent Series Resistance): 580mOhm @ 120Hz
Lifetime @ Temp.: 5000 Hrs @ 105°C
Height - Seated (Max): 0.366" (9.30mm)
Capacitance: 320 µF
Voltage - Rated: 150 V
Ripple Current @ Low Frequency: 800 mA @ 120 Hz
Ripple Current @ High Frequency: 1.36 A @ 20 kHz
товар відсутній
THAS321M150AB1C |
Виробник: Cornell Dubilier - CDE
Aluminium Electrolytic Capacitors - Radial Leaded THINPACK
Aluminium Electrolytic Capacitors - Radial Leaded THINPACK
товар відсутній
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