Результат пошуку "db22" : 148
Вид перегляду :
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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F873DB223J760Z | KEMET | Safety Capacitors 760V .022uF 5% LS=22.5mm |
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F873DB223K760L | KEMET |
Description: CAP FILM POLYPROP RAD X1 Packaging: Tape & Box (TB) |
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F873DB223K760R | KEMET |
Description: CAP FILM POLYPROP RAD X1 Packaging: Tape & Box (TB) |
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F873DB223K760Z | KEMET |
Description: CAP FILM POLYPROP RAD X1 Packaging: Tape & Box (TB) |
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F873DB223K760Z | KEMET | Safety Capacitors 760V .022uF 10% LS=22.5mm |
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F873DB223M760L | KEMET |
Description: CAP FILM POLYPROP RAD X1 Packaging: Tape & Box (TB) |
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F873DB223M760L | KEMET | Safety Capacitors 760V .022uF 20% LS=22.5mm |
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F873DB223M760R | KEMET |
Description: CAP FILM POLYPROP RAD X1 Packaging: Tape & Box (TB) |
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F873DB223M760R | KEMET | Safety Capacitors 760V .022uF 20% LS=22.5mm |
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F873DB223M760Z | KEMET |
Description: CAP FILM POLYPROP RAD X1 Packaging: Tape & Box (TB) |
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FDB-2 24-M | OBO BETTERMANN |
Category: Surge Arresters Description: Surge arrestor; Type 2+3; Poles: 2; 22VAC; M20x1.5; -20÷70°C; 32VDC Mounting: M20x1.5 Operating temperature: -20...70°C IP rating: IP65; IP67 Leads: leads 250mm Kind of surge arrester: Type 2+3 Conform to the norm: ATEX Ex Type of protection: surge arrestor Number of poles: 2 Max. operating voltage: 22V AC; 32V DC кількість в упаковці: 1 шт |
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FDB-2 24-N | OBO BETTERMANN |
Category: Surge Arresters Description: Surge arrestor; Type 2+3; Poles: 2; 22VAC; 1/2" NPT; -20÷70°C IP rating: IP65; IP67 Operating temperature: -20...70°C Conform to the norm: ATEX Ex Mounting: 1/2" NPT Type of protection: surge arrestor Number of poles: 2 Max. operating voltage: 22V AC; 32V DC Leads: leads 250mm Kind of surge arrester: Type 2+3 кількість в упаковці: 1 шт |
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IS61DDB22M18A-250B4LI | ISSI | SRAM 36Mb, DDR II (Burst of 2) CIO, Sync SRAM, 2M x 18, 165 Ball FBGA (13x15 mm), RoHS |
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IS61DDB22M18C-250M3L | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 2Mx18bit Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube Operating voltage: 1.8V |
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IS61QDB22M36A-333B4LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.8V |
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MDB227093205BP | Amphenol ICC (Commercial Products) |
Description: RUGGED D DUST COVER - 9 POSN Packaging: Bag For Use With/Related Products: Micro D (MDB) Connectors Number of Positions: 9 Accessory Type: Cap (Cover), Dust |
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NP05DB220M | Taiyo Yuden |
Description: FIXED IND 22UH 1.2A 220 MOHM SMD Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: Nonstandard Size / Dimension: 0.240" L x 0.232" W (6.10mm x 5.90mm) Mounting Type: Surface Mount Shielding: Shielded Operating Temperature: -25°C ~ 105°C DC Resistance (DCR): 220mOhm Max Frequency - Self Resonant: 18MHz Inductance Frequency - Test: 1 kHz Height - Seated (Max): 0.110" (2.80mm) Part Status: Obsolete Inductance: 22 µH Current Rating (Amps): 1.2 A |
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NP06DB220M | Taiyo Yuden |
Description: FIXED IND 22UH 1.1A 170 MOHM SMD Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: Nonstandard Size / Dimension: 0.295" L x 0.287" W (7.50mm x 7.30mm) Mounting Type: Surface Mount Shielding: Shielded Operating Temperature: -25°C ~ 105°C DC Resistance (DCR): 170mOhm Max Frequency - Self Resonant: 13MHz Inductance Frequency - Test: 1 kHz Height - Seated (Max): 0.126" (3.20mm) Inductance: 22 µH Current Rating (Amps): 1.1 A |
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NTHCDB22Z10007C | Amphenol Commercial Products | Amphenol |
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CK-AZDB-22-ZG | LORLIN |
Category: Rotary Switches Description: Switch: rotary; Pos: 12; 0.15A/250VDC; Poles number: 1; 30°; 999MΩ Type of switch: rotary Number of positions: 12 DC contacts rating @R: 0.15A / 250V DC Poles number: 1 Indexed positions: 30° Operating temperature: -30...85°C Leads: for PCB Contact material: brass Switching method: MBB (shorting) Body material: polyamide Min. insulation resistance: 999MΩ Mechanical durability: 10000 cycles Shaft surface: smooth Shaft diameter: 6mm Fastening thread: M10x0,75 Contact plating: silver plated Stable positions number: 12 кількість в упаковці: 1 шт |
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IS61DDB22M18C-250M3L | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 2Mx18bit Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube Operating voltage: 1.8V кількість в упаковці: 105 шт |
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IS61QDB22M36A-333B4LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.8V кількість в упаковці: 144 шт |
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F873DB223K760L |
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F873DB223K760R |
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F873DB223K760Z |
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F873DB223M760L |
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F873DB223M760R |
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F873DB223M760Z |
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FDB-2 24-M |
Виробник: OBO BETTERMANN
Category: Surge Arresters
Description: Surge arrestor; Type 2+3; Poles: 2; 22VAC; M20x1.5; -20÷70°C; 32VDC
Mounting: M20x1.5
Operating temperature: -20...70°C
IP rating: IP65; IP67
Leads: leads 250mm
Kind of surge arrester: Type 2+3
Conform to the norm: ATEX Ex
Type of protection: surge arrestor
Number of poles: 2
Max. operating voltage: 22V AC; 32V DC
кількість в упаковці: 1 шт
Category: Surge Arresters
Description: Surge arrestor; Type 2+3; Poles: 2; 22VAC; M20x1.5; -20÷70°C; 32VDC
Mounting: M20x1.5
Operating temperature: -20...70°C
IP rating: IP65; IP67
Leads: leads 250mm
Kind of surge arrester: Type 2+3
Conform to the norm: ATEX Ex
Type of protection: surge arrestor
Number of poles: 2
Max. operating voltage: 22V AC; 32V DC
кількість в упаковці: 1 шт
товар відсутній
FDB-2 24-N |
Виробник: OBO BETTERMANN
Category: Surge Arresters
Description: Surge arrestor; Type 2+3; Poles: 2; 22VAC; 1/2" NPT; -20÷70°C
IP rating: IP65; IP67
Operating temperature: -20...70°C
Conform to the norm: ATEX Ex
Mounting: 1/2" NPT
Type of protection: surge arrestor
Number of poles: 2
Max. operating voltage: 22V AC; 32V DC
Leads: leads 250mm
Kind of surge arrester: Type 2+3
кількість в упаковці: 1 шт
Category: Surge Arresters
Description: Surge arrestor; Type 2+3; Poles: 2; 22VAC; 1/2" NPT; -20÷70°C
IP rating: IP65; IP67
Operating temperature: -20...70°C
Conform to the norm: ATEX Ex
Mounting: 1/2" NPT
Type of protection: surge arrestor
Number of poles: 2
Max. operating voltage: 22V AC; 32V DC
Leads: leads 250mm
Kind of surge arrester: Type 2+3
кількість в упаковці: 1 шт
товар відсутній
IS61DDB22M18A-250B4LI |
Виробник: ISSI
SRAM 36Mb, DDR II (Burst of 2) CIO, Sync SRAM, 2M x 18, 165 Ball FBGA (13x15 mm), RoHS
SRAM 36Mb, DDR II (Burst of 2) CIO, Sync SRAM, 2M x 18, 165 Ball FBGA (13x15 mm), RoHS
товар відсутній
IS61DDB22M18C-250M3L |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
товар відсутній
IS61QDB22M36A-333B4LI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
товар відсутній
MDB227093205BP |
Виробник: Amphenol ICC (Commercial Products)
Description: RUGGED D DUST COVER - 9 POSN
Packaging: Bag
For Use With/Related Products: Micro D (MDB) Connectors
Number of Positions: 9
Accessory Type: Cap (Cover), Dust
Description: RUGGED D DUST COVER - 9 POSN
Packaging: Bag
For Use With/Related Products: Micro D (MDB) Connectors
Number of Positions: 9
Accessory Type: Cap (Cover), Dust
товар відсутній
NP05DB220M |
Виробник: Taiyo Yuden
Description: FIXED IND 22UH 1.2A 220 MOHM SMD
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard
Size / Dimension: 0.240" L x 0.232" W (6.10mm x 5.90mm)
Mounting Type: Surface Mount
Shielding: Shielded
Operating Temperature: -25°C ~ 105°C
DC Resistance (DCR): 220mOhm Max
Frequency - Self Resonant: 18MHz
Inductance Frequency - Test: 1 kHz
Height - Seated (Max): 0.110" (2.80mm)
Part Status: Obsolete
Inductance: 22 µH
Current Rating (Amps): 1.2 A
Description: FIXED IND 22UH 1.2A 220 MOHM SMD
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard
Size / Dimension: 0.240" L x 0.232" W (6.10mm x 5.90mm)
Mounting Type: Surface Mount
Shielding: Shielded
Operating Temperature: -25°C ~ 105°C
DC Resistance (DCR): 220mOhm Max
Frequency - Self Resonant: 18MHz
Inductance Frequency - Test: 1 kHz
Height - Seated (Max): 0.110" (2.80mm)
Part Status: Obsolete
Inductance: 22 µH
Current Rating (Amps): 1.2 A
товар відсутній
NP06DB220M |
Виробник: Taiyo Yuden
Description: FIXED IND 22UH 1.1A 170 MOHM SMD
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard
Size / Dimension: 0.295" L x 0.287" W (7.50mm x 7.30mm)
Mounting Type: Surface Mount
Shielding: Shielded
Operating Temperature: -25°C ~ 105°C
DC Resistance (DCR): 170mOhm Max
Frequency - Self Resonant: 13MHz
Inductance Frequency - Test: 1 kHz
Height - Seated (Max): 0.126" (3.20mm)
Inductance: 22 µH
Current Rating (Amps): 1.1 A
Description: FIXED IND 22UH 1.1A 170 MOHM SMD
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard
Size / Dimension: 0.295" L x 0.287" W (7.50mm x 7.30mm)
Mounting Type: Surface Mount
Shielding: Shielded
Operating Temperature: -25°C ~ 105°C
DC Resistance (DCR): 170mOhm Max
Frequency - Self Resonant: 13MHz
Inductance Frequency - Test: 1 kHz
Height - Seated (Max): 0.126" (3.20mm)
Inductance: 22 µH
Current Rating (Amps): 1.1 A
товар відсутній
CK-AZDB-22-ZG |
Виробник: LORLIN
Category: Rotary Switches
Description: Switch: rotary; Pos: 12; 0.15A/250VDC; Poles number: 1; 30°; 999MΩ
Type of switch: rotary
Number of positions: 12
DC contacts rating @R: 0.15A / 250V DC
Poles number: 1
Indexed positions: 30°
Operating temperature: -30...85°C
Leads: for PCB
Contact material: brass
Switching method: MBB (shorting)
Body material: polyamide
Min. insulation resistance: 999MΩ
Mechanical durability: 10000 cycles
Shaft surface: smooth
Shaft diameter: 6mm
Fastening thread: M10x0,75
Contact plating: silver plated
Stable positions number: 12
кількість в упаковці: 1 шт
Category: Rotary Switches
Description: Switch: rotary; Pos: 12; 0.15A/250VDC; Poles number: 1; 30°; 999MΩ
Type of switch: rotary
Number of positions: 12
DC contacts rating @R: 0.15A / 250V DC
Poles number: 1
Indexed positions: 30°
Operating temperature: -30...85°C
Leads: for PCB
Contact material: brass
Switching method: MBB (shorting)
Body material: polyamide
Min. insulation resistance: 999MΩ
Mechanical durability: 10000 cycles
Shaft surface: smooth
Shaft diameter: 6mm
Fastening thread: M10x0,75
Contact plating: silver plated
Stable positions number: 12
кількість в упаковці: 1 шт
товар відсутній
IS61DDB22M18C-250M3L |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
кількість в упаковці: 105 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
кількість в упаковці: 105 шт
товар відсутній
IS61QDB22M36A-333B4LI |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
кількість в упаковці: 144 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
кількість в упаковці: 144 шт
товар відсутній