Результат пошуку "fr210" : 117
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| Фото | Назва | Виробник | Інформація |
Доступність |
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| FEBFSFR2100-D015V1-GEVB | onsemi |
 Description: EVAL BOARD FOR FSFR2100Packaging: Box Voltage - Output: 24V Voltage - Input: 340V ~ 400V Current - Output: 8A Regulator Topology: Resonant Board Type: Fully Populated Utilized IC / Part: FSFR2100 Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side Outputs and Type: 1, Isolated Part Status: Active Power - Output: 192 W |
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FSFR2100 | ON Semiconductor |
AC to DC Switching Converters, Offline Regulators |
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FSFR2100 | onsemi |
Description: IC OFFLINE SW HALF-BRIDGE 9SIP Packaging: Tube Package / Case: 10-SIP Module, 9 Leads, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 130°C (TJ) Duty Cycle: 50% Frequency - Switching: Up to 300kHz Internal Switch(s): Yes Voltage - Breakdown: 600V Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 11.3V ~ 25V Supplier Device Package: 9-SIP Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 14.5 V Control Features: Frequency Control Part Status: Last Time Buy Power (Watts): 450 W |
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FSFR2100U | onsemi |
Description: IC OFFLINE SW HALF-BRIDGE 9SIP Packaging: Tube Package / Case: 10-SIP Module, 9 Leads, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 130°C (TJ) Duty Cycle: 50% Frequency - Switching: Up to 300kHz Internal Switch(s): Yes Voltage - Breakdown: 500V Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 11.3V ~ 25V Supplier Device Package: 9-SIP Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 14.5 V Control Features: EN, Frequency Control Part Status: Obsolete Power (Watts): 400 W |
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FSFR2100US | onsemi |
Description: IC OFFLINE SW HALF-BRIDGE 9SIP Packaging: Tube Package / Case: 10-SSIP Module, 9 Leads, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 130°C (TJ) Duty Cycle: 50% Frequency - Switching: Up to 300kHz Internal Switch(s): Yes Voltage - Breakdown: 500V Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 10V ~ 25V Supplier Device Package: 9-SIP Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 12.5 V Control Features: Frequency Control Power (Watts): 400 W |
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FSFR2100US | ON Semiconductor |
Power Switch Hi Side/Lo Side 1-OUT 0.41Ohm 9-Pin SIP Tube |
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FSFR2100USL | onsemi |
Description: IC OFFLINE SW HALF-BRIDGE 9SIP Packaging: Tube Package / Case: 10-SIP Module, 9 Leads, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 130°C (TJ) Duty Cycle: 50% Frequency - Switching: Up to 300kHz Internal Switch(s): Yes Voltage - Breakdown: 500V Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 10V ~ 25V Supplier Device Package: 9-SIP (L forming) Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 12.5 V Control Features: Frequency Control Power (Watts): 400 W |
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| FSFR2100XS | ON Semiconductor |
Power Switch Hi Side/Lo Side 1-OUT 10.5A 0.41Ohm 9-Pin SIP Tube |
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FSFR2100XS | ON Semiconductor |
Power Switch Hi Side/Lo Side 1-OUT 10.5A 0.41Ohm 9-Pin SIP Tube |
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FSFR2100XSL | onsemi |
Description: IC OFFLINE SW HALF-BRIDGE 9SIP Packaging: Tube Package / Case: 10-SIP Module, 9 Leads, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 130°C (TJ) Duty Cycle: 50% Frequency - Switching: Up to 300kHz Internal Switch(s): Yes Voltage - Breakdown: 500V Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 10V ~ 25V Supplier Device Package: 9-SIP (L forming) Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 12.5 V Control Features: Frequency Control Part Status: Obsolete Power (Watts): 400 W |
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FSFR2100XSL | ON Semiconductor |
Power Switch Hi Side/Lo Side 1-OUT 10.5A 0.41Ohm 9-Pin SIP Tube |
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IRFR210 | Vishay |
Trans MOSFET N-CH 200V 2.6A 3-Pin(2+Tab) DPAK |
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IRFR210 | Vishay Siliconix |
Description: MOSFET N-CH 200V 2.6A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V |
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IRFR210BTM-FP001 | ON Semiconductor |
Trans MOSFET N-CH 200V 2.7A 3-Pin(2+Tab) DPAK T/R |
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IRFR210BTM_FP001 | onsemi |
Description: MOSFET N-CH 200V 2.7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.35A, 10V Power Dissipation (Max): 2.5W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V |
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IRFR210TR | Vishay Siliconix |
Description: MOSFET N-CH 200V 2.6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V |
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IRFR210TR | Vishay |
Trans MOSFET N-CH 200V 2.6A 3-Pin(2+Tab) DPAK T/R |
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| IRFR210TRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 2.6A Pulsed drain current: 10A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced |
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IRFR210TRLPBF | Vishay |
Trans MOSFET N-CH 200V 2.6A 3-Pin(2+Tab) DPAK T/R |
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| IRFR210TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 2.6A Pulsed drain current: 10A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFR210TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 2.6A Pulsed drain current: 10A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFR210TRPBF | Vishay |
Trans MOSFET N-CH 200V 2.6A 3-Pin(2+Tab) DPAK T/R |
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IRFR210TRR | Vishay Siliconix |
Description: MOSFET N-CH 200V 2.6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V |
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IRFR210TRRPBF | Vishay Siliconix |
Description: MOSFET N-CH 200V 2.6A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V |
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IRFR210TRRPBF | Vishay Siliconix |
Description: MOSFET N-CH 200V 2.6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V |
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IRFR210TRRPBF | Vishay Semiconductors |
MOSFET N-Chan 200V 2.6 Amp |
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| IUC76-F203-M-FR2 10PCS | Pepperl+Fuchs, Inc. |
Description: IDENT RFID (INDUCTIVE) Packaging: Box |
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| IUC76-F205-M-FR2 10PCS | Pepperl+Fuchs, Inc. |
Description: IDENT RFID (INDUCTIVE) Packaging: Box |
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| IUC76-F209-M-FR2 10PCS | Pepperl+Fuchs, Inc. |
Description: IDENT RFID (INDUCTIVE) Packaging: Box |
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| IUC77-34-M-FR2 10PCS | Pepperl+Fuchs, Inc. |
Description: IDENT RFID (INDUCTIVE) Packaging: Box |
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| IUC77-50-FR2 10PCS | Pepperl+Fuchs, Inc. |
Description: IDENT RFID (INDUCTIVE) Packaging: Box |
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| IUC87-F257-T17-M-FR2 10PCS | Pepperl+Fuchs, Inc. |
Description: IDENT RFID (INDUCTIVE) Packaging: Box |
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| IUC87-F257-T18-M-FR2 10PCS | Pepperl+Fuchs, Inc. |
Description: IDENT RFID (INDUCTIVE) Packaging: Box |
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| IUC87-F257-T19-M-FR2 10PCS | Pepperl+Fuchs, Inc. |
Description: IDENT RFID (INDUCTIVE) Packaging: Box |
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MSP430FR2100IPW16 | Texas Instruments |
MCU 16-bit MSP430 RISC 1KB Flash 3.3V 16-Pin TSSOP Tube |
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MSP430FR2100IPW16R | Texas Instruments |
MCU 16-bit MSP430 RISC 1KB Flash 3.3V 16-Pin TSSOP T/R |
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MSP430FR2100IRLLR | Texas Instruments |
Description: IC MCU 16BIT 1KB FRAM 24VQFN Packaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 1KB (1K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FRAM Core Processor: MSP430 CPU16 Data Converters: A/D 8x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: IrDA, SCI, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 24-VQFN (3x3) Part Status: Active Number of I/O: 12 DigiKey Programmable: Not Verified |
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MSP430FR2100IRLLR | Texas Instruments |
Description: IC MCU 16BIT 1KB FRAM 24VQFN Packaging: Tape & Reel (TR) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 1KB (1K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FRAM Core Processor: MSP430 CPU16 Data Converters: A/D 8x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: IrDA, SCI, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 24-VQFN (3x3) Part Status: Active Number of I/O: 12 DigiKey Programmable: Not Verified |
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MSP430FR2100IRLLR | Texas Instruments |
MCU 16-bit MSP430 RISC 1KB Flash 3.3V 24-Pin VQFN EP T/R |
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MSP430FR2100IRLLT | Texas Instruments |
MCU 16-bit MSP430 RISC 1KB Flash 3.3V 24-Pin VQFN EP T/R |
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MSP430FR2100IRLLT | Texas Instruments |
16-bit Microcontrollers - MCU 16 MHz Ultra-LP Microcontroller |
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| NFR210W-10A | IDEC |
Circuit Breakers |
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| PFR-2100-400 | CUI Inc. |
Description: AC/DC CONVERTER 400V 2100W Packaging: Box Power (Watts): 2100W Features: Adjustable Output, Remote On/Of Size / Dimension: 11.50" L x 5.20" W x 2.50" H (292.1mm x 132.1mm x 63.5mm) Mounting Type: Rack Mount Voltage - Input: 180 ~ 264 VAC Type: Front End Operating Temperature: 0°C ~ 50°C Applications: ITE (Commercial) Approval Agency: CE, cTUVus Efficiency: 93% Voltage - Output 1: 400V Part Status: Obsolete Number of Outputs: 1 Current - Output 1: 5.125 A |
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PJRB461F_R2_10001 | Panjit |
Schottky Diodes & Rectifiers 25V Schottky 0.7A |
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SIHFR210-GE3 | Vishay / Siliconix | MOSFET |
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| SIHFR210TRL-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 1.7A; Idm: 10A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 1.7A Pulsed drain current: 10A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIHFR210TRL-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 1.7A; Idm: 10A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 1.7A Pulsed drain current: 10A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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SIHFR210TRL-GE3 | Vishay / Siliconix | MOSFET |
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SIHFR210TRL-GE3 | Vishay |
Trans MOSFET N-CH 200V 2.6A 3-Pin(2+Tab) DPAK T/R |
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SIHFR210TRR-GE3 | Vishay / Siliconix | MOSFET |
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SS3040FL-F_R2_10001 | Panjit |
Schottky Diodes & Rectifiers 40V Schottky 2.4A |
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| IRFR210TRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 2.6A Pulsed drain current: 10A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| FEB212 | onsemi |
Description: BOARD EVAL FOR FSFR2100 Packaging: Bulk Voltage - Output: 24V Voltage - Input: 340V ~ 400V Current - Output: 8A Frequency - Switching: 300kHz Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: FSFR2100 Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side Outputs and Type: 1, Isolated Part Status: Obsolete Power - Output: 192 W |
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| FEBFSFR2100-D015V1-GEVB |
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Виробник: onsemi
Description: EVAL BOARD FOR FSFR2100
Packaging: Box
Voltage - Output: 24V
Voltage - Input: 340V ~ 400V
Current - Output: 8A
Regulator Topology: Resonant
Board Type: Fully Populated
Utilized IC / Part: FSFR2100
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1, Isolated
Part Status: Active
Power - Output: 192 W
Description: EVAL BOARD FOR FSFR2100
Packaging: Box
Voltage - Output: 24V
Voltage - Input: 340V ~ 400V
Current - Output: 8A
Regulator Topology: Resonant
Board Type: Fully Populated
Utilized IC / Part: FSFR2100
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1, Isolated
Part Status: Active
Power - Output: 192 W
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| FSFR2100 |
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Виробник: ON Semiconductor
AC to DC Switching Converters, Offline Regulators
AC to DC Switching Converters, Offline Regulators
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| FSFR2100 |
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Виробник: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 600V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 11.3V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 14.5 V
Control Features: Frequency Control
Part Status: Last Time Buy
Power (Watts): 450 W
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 600V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 11.3V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 14.5 V
Control Features: Frequency Control
Part Status: Last Time Buy
Power (Watts): 450 W
товар відсутній
| FSFR2100U |
Виробник: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 11.3V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 14.5 V
Control Features: EN, Frequency Control
Part Status: Obsolete
Power (Watts): 400 W
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 11.3V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 14.5 V
Control Features: EN, Frequency Control
Part Status: Obsolete
Power (Watts): 400 W
товар відсутній
| FSFR2100US |
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Виробник: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SSIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 400 W
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SSIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 400 W
товар відсутній
| FSFR2100US |
|
Виробник: ON Semiconductor
Power Switch Hi Side/Lo Side 1-OUT 0.41Ohm 9-Pin SIP Tube
Power Switch Hi Side/Lo Side 1-OUT 0.41Ohm 9-Pin SIP Tube
товар відсутній
| FSFR2100USL |
|
Виробник: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 400 W
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 400 W
товар відсутній
| FSFR2100XS |
|
Виробник: ON Semiconductor
Power Switch Hi Side/Lo Side 1-OUT 10.5A 0.41Ohm 9-Pin SIP Tube
Power Switch Hi Side/Lo Side 1-OUT 10.5A 0.41Ohm 9-Pin SIP Tube
товар відсутній
| FSFR2100XS |
|
Виробник: ON Semiconductor
Power Switch Hi Side/Lo Side 1-OUT 10.5A 0.41Ohm 9-Pin SIP Tube
Power Switch Hi Side/Lo Side 1-OUT 10.5A 0.41Ohm 9-Pin SIP Tube
товар відсутній
| FSFR2100XSL |
|
Виробник: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Obsolete
Power (Watts): 400 W
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Obsolete
Power (Watts): 400 W
товар відсутній
| FSFR2100XSL |
|
Виробник: ON Semiconductor
Power Switch Hi Side/Lo Side 1-OUT 10.5A 0.41Ohm 9-Pin SIP Tube
Power Switch Hi Side/Lo Side 1-OUT 10.5A 0.41Ohm 9-Pin SIP Tube
товар відсутній
| IRFR210 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Description: MOSFET N-CH 200V 2.6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
товар відсутній
| IRFR210BTM-FP001 |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 200V 2.7A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 200V 2.7A 3-Pin(2+Tab) DPAK T/R
товар відсутній
| IRFR210BTM_FP001 |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 2.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.35A, 10V
Power Dissipation (Max): 2.5W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
Description: MOSFET N-CH 200V 2.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.35A, 10V
Power Dissipation (Max): 2.5W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
товар відсутній
| IRFR210TR |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Description: MOSFET N-CH 200V 2.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
товар відсутній
| IRFR210TRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR210TRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR210TRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IRFR210TRR |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Description: MOSFET N-CH 200V 2.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
товар відсутній
| IRFR210TRRPBF |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Description: MOSFET N-CH 200V 2.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
товар відсутній
| IRFR210TRRPBF |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Description: MOSFET N-CH 200V 2.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
товар відсутній
| IUC76-F203-M-FR2 10PCS |
товар відсутній
| IUC76-F205-M-FR2 10PCS |
товар відсутній
| IUC76-F209-M-FR2 10PCS |
товар відсутній
| IUC77-34-M-FR2 10PCS |
товар відсутній
| IUC77-50-FR2 10PCS |
товар відсутній
| IUC87-F257-T17-M-FR2 10PCS |
товар відсутній
| IUC87-F257-T18-M-FR2 10PCS |
товар відсутній
| IUC87-F257-T19-M-FR2 10PCS |
товар відсутній
| MSP430FR2100IPW16 |
|
Виробник: Texas Instruments
MCU 16-bit MSP430 RISC 1KB Flash 3.3V 16-Pin TSSOP Tube
MCU 16-bit MSP430 RISC 1KB Flash 3.3V 16-Pin TSSOP Tube
товар відсутній
| MSP430FR2100IPW16R |
|
Виробник: Texas Instruments
MCU 16-bit MSP430 RISC 1KB Flash 3.3V 16-Pin TSSOP T/R
MCU 16-bit MSP430 RISC 1KB Flash 3.3V 16-Pin TSSOP T/R
товар відсутній
| MSP430FR2100IRLLR |
|
Виробник: Texas Instruments
Description: IC MCU 16BIT 1KB FRAM 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 1KB (1K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FRAM
Core Processor: MSP430 CPU16
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: IrDA, SCI, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-VQFN (3x3)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 1KB FRAM 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 1KB (1K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FRAM
Core Processor: MSP430 CPU16
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: IrDA, SCI, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-VQFN (3x3)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
товар відсутній
| MSP430FR2100IRLLR |
|
Виробник: Texas Instruments
Description: IC MCU 16BIT 1KB FRAM 24VQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 1KB (1K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FRAM
Core Processor: MSP430 CPU16
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: IrDA, SCI, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-VQFN (3x3)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 1KB FRAM 24VQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 1KB (1K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FRAM
Core Processor: MSP430 CPU16
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: IrDA, SCI, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-VQFN (3x3)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
товар відсутній
| MSP430FR2100IRLLR |
|
Виробник: Texas Instruments
MCU 16-bit MSP430 RISC 1KB Flash 3.3V 24-Pin VQFN EP T/R
MCU 16-bit MSP430 RISC 1KB Flash 3.3V 24-Pin VQFN EP T/R
товар відсутній
| MSP430FR2100IRLLT |
|
Виробник: Texas Instruments
MCU 16-bit MSP430 RISC 1KB Flash 3.3V 24-Pin VQFN EP T/R
MCU 16-bit MSP430 RISC 1KB Flash 3.3V 24-Pin VQFN EP T/R
товар відсутній
| MSP430FR2100IRLLT |
|
Виробник: Texas Instruments
16-bit Microcontrollers - MCU 16 MHz Ultra-LP Microcontroller
16-bit Microcontrollers - MCU 16 MHz Ultra-LP Microcontroller
товар відсутній
| PFR-2100-400 |
Виробник: CUI Inc.
Description: AC/DC CONVERTER 400V 2100W
Packaging: Box
Power (Watts): 2100W
Features: Adjustable Output, Remote On/Of
Size / Dimension: 11.50" L x 5.20" W x 2.50" H (292.1mm x 132.1mm x 63.5mm)
Mounting Type: Rack Mount
Voltage - Input: 180 ~ 264 VAC
Type: Front End
Operating Temperature: 0°C ~ 50°C
Applications: ITE (Commercial)
Approval Agency: CE, cTUVus
Efficiency: 93%
Voltage - Output 1: 400V
Part Status: Obsolete
Number of Outputs: 1
Current - Output 1: 5.125 A
Description: AC/DC CONVERTER 400V 2100W
Packaging: Box
Power (Watts): 2100W
Features: Adjustable Output, Remote On/Of
Size / Dimension: 11.50" L x 5.20" W x 2.50" H (292.1mm x 132.1mm x 63.5mm)
Mounting Type: Rack Mount
Voltage - Input: 180 ~ 264 VAC
Type: Front End
Operating Temperature: 0°C ~ 50°C
Applications: ITE (Commercial)
Approval Agency: CE, cTUVus
Efficiency: 93%
Voltage - Output 1: 400V
Part Status: Obsolete
Number of Outputs: 1
Current - Output 1: 5.125 A
товар відсутній
| SIHFR210TRL-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 1.7A; Idm: 10A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 1.7A
Pulsed drain current: 10A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 1.7A; Idm: 10A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 1.7A
Pulsed drain current: 10A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIHFR210TRL-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 1.7A; Idm: 10A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 1.7A
Pulsed drain current: 10A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 1.7A; Idm: 10A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 1.7A
Pulsed drain current: 10A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IRFR210TRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| FEB212 |
|
Виробник: onsemi
Description: BOARD EVAL FOR FSFR2100
Packaging: Bulk
Voltage - Output: 24V
Voltage - Input: 340V ~ 400V
Current - Output: 8A
Frequency - Switching: 300kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: FSFR2100
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 192 W
Description: BOARD EVAL FOR FSFR2100
Packaging: Bulk
Voltage - Output: 24V
Voltage - Input: 340V ~ 400V
Current - Output: 8A
Frequency - Switching: 300kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: FSFR2100
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 192 W
товар відсутній
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