Результат пошуку "mn300" : > 120
Вид перегляду :
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| 100B181JMN300XC20 | KYOCERA AVX |
 Silicon RF Capacitors / Thin Film |
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| 100B201FMN300XC20 | KYOCERA AVX |
Silicon RF Capacitors / Thin Film |
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| 100B201JMN300XC20 | KYOCERA AVX |
Silicon RF Capacitors / Thin Film |
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| 100C222JMN300XJ24 | KYOCERA AVX |
Silicon RF Capacitors / Thin Film |
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| 100C222KMN300XJ24 | KYOCERA AVX |
Silicon RF Capacitors / Thin Film |
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| 100C272FMN300XJ24 | KYOCERA AVX |
Silicon RF Capacitors / Thin Film |
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| 100C272GMN300XJ24 | KYOCERA AVX |
Silicon RF Capacitors / Thin Film |
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| 100C272JMN300XJ24 | KYOCERA AVX |
Silicon RF Capacitors / Thin Film |
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| 100C272KMN300XJ24 | KYOCERA AVX |
Silicon RF Capacitors / Thin Film |
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700B121FMN300XC20 | KYOCERA AVX |
Multilayer Ceramic Capacitors MLCC - SMD/SMT 300V 120pF Tol 1% Las Mkg |
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700B151FMN300XC20 | KYOCERA AVX |
Multilayer Ceramic Capacitors MLCC - SMD/SMT 300V 150pF Tol 1% Las Mkg |
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700B181FMN300XC20 | KYOCERA AVX |
Multilayer Ceramic Capacitors MLCC - SMD/SMT 300V 180pF Tol 1% Las Mkg |
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700B201FMN300XC20 | KYOCERA AVX |
Multilayer Ceramic Capacitors MLCC - SMD/SMT 300V 200pF Tol 1% Las Mkg |
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DMN3007LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 64A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Pulsed drain current: 64A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 64.2nC Kind of package: reel; tape Kind of channel: enhanced |
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DMN3007LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 64A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Pulsed drain current: 64A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 64.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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DMN3007LSS-13 | Diodes Inc |
Trans MOSFET N-CH 30V 16A 8-Pin SOP T/R |
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DMN3007LSSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 64A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Pulsed drain current: 64A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 64.2nC Kind of package: reel; tape Kind of channel: enhanced |
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DMN3007LSSQ-13 | Diodes Inc |
Trans MOSFET N-CH 30V 16A Automotive 8-Pin SO T/R |
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| DMN3008SCP10-7 | Diodes Inc |
Trans MOSFET N-CH 30V 14.6A 10-Pin X4-DSN T/R |
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| DMN3008SCP10-7 | Diodes Incorporated |
MOSFET MOSFETBVDSS: 25V-30V |
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| DMN3008SFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18.4A; Idm: 150A; 1.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 18.4A Pulsed drain current: 150A Power dissipation: 1.3W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhanced |
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DMN3008SFG-13 | Diodes Inc |
Trans MOSFET N-CH 30V 17.6A 8-Pin PowerDI EP T/R |
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| DMN3008SFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18.4A; Idm: 150A; 1.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 18.4A Pulsed drain current: 150A Power dissipation: 1.3W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhanced |
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| DMN3008SFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18.4A; Idm: 150A; 1.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 18.4A Pulsed drain current: 150A Power dissipation: 1.3W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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DMN3008SFG-7 | Diodes Inc |
Trans MOSFET N-CH 30V 17.6A 8-Pin PowerDI EP T/R |
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| DMN3008SFGQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18.4A; Idm: 150A; 1.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 18.4A Pulsed drain current: 150A Power dissipation: 1.3W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhanced |
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DMN3008SFGQ-13 | Diodes Inc |
Trans MOSFET N-CH 30V 17.6A Automotive 8-Pin PowerDI EP T/R |
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DMN3008SFGQ-13 | Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V |
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DMN3008SFGQ-7 | Diodes Inc |
Trans MOSFET N-CH 30V 17.6A Automotive 8-Pin PowerDI EP T/R |
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DMN3009LFV-13 | Diodes Incorporated |
MOSFET MOSFETBVDSS: 25V-30V |
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| DMN3009LFV-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 90A; 2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Pulsed drain current: 90A Power dissipation: 2W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
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| DMN3009LFV-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 90A; 2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Pulsed drain current: 90A Power dissipation: 2W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| DMN3009LFV-7 | Diodes Inc |
Trans MOSFET N-CH 30V 60A 8-Pin PowerDI EP T/R |
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| DMN3009LFVQ-13 | Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 3K |
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| DMN3009LFVQ-7 | Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 2K |
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DMN3009LFVW-13 | Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V |
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| DMN3009LFVW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 48A Pulsed drain current: 90A Power dissipation: 2W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
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| DMN3009LFVW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 48A Pulsed drain current: 90A Power dissipation: 2W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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DMN3009LFVW-7 | Diodes Inc |
Trans MOSFET N-CH 30V 60A 8-Pin PowerDI EP T/R |
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| DMN3009LFVWQ-13 | Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 3K |
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| DMN3009LFVWQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 48A Pulsed drain current: 90A Power dissipation: 2W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
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| DMN3009LFVWQ-7 | Diodes Inc |
MOSFET BVDSS: 25V30V PowerDI3333-8 T&R 2K |
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| DMN3009LFVWQ-7 | Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 2K |
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| DMN3009SFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Pulsed drain current: 80A Power dissipation: 1.4W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
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DMN3009SFG-13 | Diodes Inc |
30V N-CHANNEL ENHANCEMENT MODE MOSFET |
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DMN3009SFG-13 | Diodes Incorporated |
MOSFET 30V N-Ch Enh FET 20Vgs Low Rdson |
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| DMN3009SFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Pulsed drain current: 80A Power dissipation: 1.4W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
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| DMN3009SFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Pulsed drain current: 80A Power dissipation: 1.4W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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DMN3009SFG-7 | Diodes Inc |
30V N-CHANNEL ENHANCEMENT MODE MOSFET |
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DMN3009SFGQ-13 | Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V |
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| DMN3009SFGQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Pulsed drain current: 80A Power dissipation: 1.4W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
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| DMN3009SFGQ-7 | Diodes Inc |
Trans MOSFET N-CH 30V 16A Automotive 8-Pin PowerDI EP T/R |
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DMN3009SK3-13 | Diodes Inc |
Trans MOSFET N-CH 30V 20A 3-Pin(2+Tab) DPAK T/R |
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DMN3009SSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 80A; 1.8W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12A Pulsed drain current: 80A Power dissipation: 1.8W Case: SO8 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
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DMN3009SSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 80A; 1.8W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12A Pulsed drain current: 80A Power dissipation: 1.8W Case: SO8 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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DMN3009SSS-13 | Diodes Inc |
Trans MOSFET N-CH 30V 15A 8-Pin SO T/R |
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NCV8154MN300300TBG | ON Semiconductor |
LDO Regulator Pos 3.3V3.3V 0.3A/0.3A Automotive 10-Pin DFN EP T/R |
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NCV8535MN300R2G | ON Semiconductor |
LDO Regulator Pos 3V 0.5A Automotive 10-Pin DFN EP T/R |
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NCV8570BMN300R2G | ON Semiconductor |
LDO Regulator Pos 3V 0.2A Automotive 6-Pin DFN EP T/R |
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| NCV8570MN300R2G | ON Semiconductor |
LDO Regulator Pos 3V 0.2A Automotive 6-Pin DFN EP T/R |
товар відсутній |
| 700B121FMN300XC20 |
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Виробник: KYOCERA AVX
Multilayer Ceramic Capacitors MLCC - SMD/SMT 300V 120pF Tol 1% Las Mkg
Multilayer Ceramic Capacitors MLCC - SMD/SMT 300V 120pF Tol 1% Las Mkg
товар відсутній
| 700B151FMN300XC20 |
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Виробник: KYOCERA AVX
Multilayer Ceramic Capacitors MLCC - SMD/SMT 300V 150pF Tol 1% Las Mkg
Multilayer Ceramic Capacitors MLCC - SMD/SMT 300V 150pF Tol 1% Las Mkg
товар відсутній
| 700B181FMN300XC20 |
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Виробник: KYOCERA AVX
Multilayer Ceramic Capacitors MLCC - SMD/SMT 300V 180pF Tol 1% Las Mkg
Multilayer Ceramic Capacitors MLCC - SMD/SMT 300V 180pF Tol 1% Las Mkg
товар відсутній
| 700B201FMN300XC20 |
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Виробник: KYOCERA AVX
Multilayer Ceramic Capacitors MLCC - SMD/SMT 300V 200pF Tol 1% Las Mkg
Multilayer Ceramic Capacitors MLCC - SMD/SMT 300V 200pF Tol 1% Las Mkg
товар відсутній
| DMN3007LSS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 64A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 64A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 64.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 64A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 64A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 64.2nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| DMN3007LSS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 64A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 64A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 64.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 64A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 64A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 64.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| DMN3007LSSQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 64A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 64A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 64.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 64A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 64A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 64.2nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| DMN3007LSSQ-13 |
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Виробник: Diodes Inc
Trans MOSFET N-CH 30V 16A Automotive 8-Pin SO T/R
Trans MOSFET N-CH 30V 16A Automotive 8-Pin SO T/R
товар відсутній
| DMN3008SFG-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18.4A; Idm: 150A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18.4A
Pulsed drain current: 150A
Power dissipation: 1.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18.4A; Idm: 150A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18.4A
Pulsed drain current: 150A
Power dissipation: 1.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| DMN3008SFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18.4A; Idm: 150A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18.4A
Pulsed drain current: 150A
Power dissipation: 1.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18.4A; Idm: 150A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18.4A
Pulsed drain current: 150A
Power dissipation: 1.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| DMN3008SFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18.4A; Idm: 150A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18.4A
Pulsed drain current: 150A
Power dissipation: 1.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18.4A; Idm: 150A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18.4A
Pulsed drain current: 150A
Power dissipation: 1.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| DMN3008SFGQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18.4A; Idm: 150A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18.4A
Pulsed drain current: 150A
Power dissipation: 1.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18.4A; Idm: 150A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18.4A
Pulsed drain current: 150A
Power dissipation: 1.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| DMN3008SFGQ-13 |
|
Виробник: Diodes Inc
Trans MOSFET N-CH 30V 17.6A Automotive 8-Pin PowerDI EP T/R
Trans MOSFET N-CH 30V 17.6A Automotive 8-Pin PowerDI EP T/R
товар відсутній
| DMN3008SFGQ-7 |
|
Виробник: Diodes Inc
Trans MOSFET N-CH 30V 17.6A Automotive 8-Pin PowerDI EP T/R
Trans MOSFET N-CH 30V 17.6A Automotive 8-Pin PowerDI EP T/R
товар відсутній
| DMN3009LFV-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 90A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 90A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| DMN3009LFV-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 90A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 90A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| DMN3009LFVQ-13 |
|
Виробник: Diodes Incorporated
MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 3K
MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 3K
товар відсутній
| DMN3009LFVQ-7 |
|
Виробник: Diodes Incorporated
MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 2K
MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 2K
товар відсутній
| DMN3009LFVW-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 48A
Pulsed drain current: 90A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 48A
Pulsed drain current: 90A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| DMN3009LFVW-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 48A
Pulsed drain current: 90A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 48A
Pulsed drain current: 90A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| DMN3009LFVWQ-13 |
|
Виробник: Diodes Incorporated
MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 3K
MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 3K
товар відсутній
| DMN3009LFVWQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 48A
Pulsed drain current: 90A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 48A
Pulsed drain current: 90A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| DMN3009LFVWQ-7 |
|
Виробник: Diodes Incorporated
MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 2K
MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 2K
товар відсутній
| DMN3009SFG-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 1.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 1.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| DMN3009SFG-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 1.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 1.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| DMN3009SFG-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 1.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 1.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| DMN3009SFGQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 1.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 80A; 1.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 1.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| DMN3009SFGQ-7 |
|
Виробник: Diodes Inc
Trans MOSFET N-CH 30V 16A Automotive 8-Pin PowerDI EP T/R
Trans MOSFET N-CH 30V 16A Automotive 8-Pin PowerDI EP T/R
товар відсутній
| DMN3009SSS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 80A; 1.8W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 80A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 80A; 1.8W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 80A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| DMN3009SSS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 80A; 1.8W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 80A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 80A; 1.8W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 80A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| NCV8154MN300300TBG |
|
Виробник: ON Semiconductor
LDO Regulator Pos 3.3V3.3V 0.3A/0.3A Automotive 10-Pin DFN EP T/R
LDO Regulator Pos 3.3V3.3V 0.3A/0.3A Automotive 10-Pin DFN EP T/R
товар відсутній
| NCV8535MN300R2G |
|
Виробник: ON Semiconductor
LDO Regulator Pos 3V 0.5A Automotive 10-Pin DFN EP T/R
LDO Regulator Pos 3V 0.5A Automotive 10-Pin DFN EP T/R
товар відсутній
| NCV8570BMN300R2G |
|
Виробник: ON Semiconductor
LDO Regulator Pos 3V 0.2A Automotive 6-Pin DFN EP T/R
LDO Regulator Pos 3V 0.2A Automotive 6-Pin DFN EP T/R
товар відсутній
| NCV8570MN300R2G |
|
Виробник: ON Semiconductor
LDO Regulator Pos 3V 0.2A Automotive 6-Pin DFN EP T/R
LDO Regulator Pos 3V 0.2A Automotive 6-Pin DFN EP T/R
товар відсутній