Продукція > SEMTECH CORPORATION > Всі товари виробника SEMTECH CORPORATION (4314) > Сторінка 37 з 72
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| S3BR20 | Semtech Corporation |
 Description: BRIDGE RECT 500MA 2KV PCB |
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| S3BR25F | Semtech Corporation |
Description: BRIDGE RECT 500MA 2.5KV PCB |
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| S3BR2F | Semtech Corporation |
Description: BRIDGE RECT 2A 200V PCB |
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| S3BR4 | Semtech Corporation |
Description: BRIDGE RECT 2A 400V PCB |
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| S3BR6 | Semtech Corporation |
Description: BRIDGE RECT 2A 600V PCB |
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| S3BR8F | Semtech Corporation | Description: BRIDGE RECT 800V 2A |
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| S3HVM10 | Semtech Corporation |
Description: DIODE GEN PURP 10KV 1.2A MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Technology: Standard Current - Average Rectified (Io): 1.2A Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 10000 V Voltage - Forward (Vf) (Max) @ If: 11.5 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 10000 V |
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| S3HVM2.5 | Semtech Corporation |
Description: DIODE GEN PURP 2.5KV 3A MODULE |
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| S3HVM2.5F | Semtech Corporation |
Description: DIODE GEN PURP 2.5KV 3A MODULE |
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| S3HVM5 | Semtech Corporation |
Description: DIODE GEN PURP 5KV 2.4A MODULE |
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| S3HVM5F | Semtech Corporation |
Description: DIODE GEN PURP 5KV 2.4A MODULE |
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| S3HVM7.5 | Semtech Corporation |
Description: DIODE GEN PURP 7.5KV 1.5A MODULE |
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| S4F | Semtech Corporation |
Description: DIODE GEN PURP 400V 2A AXIAL |
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| S4KW10C-5D | Semtech Corporation |
Description: DIODE GEN PURP 10KV 6A MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 6A Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 10000 V Voltage - Forward (Vf) (Max) @ If: 10 V @ 6 A Current - Reverse Leakage @ Vr: 4 µA @ 10000 V |
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| S4KW10C-5N | Semtech Corporation |
Description: DIODE GEN PURP 10KV 12A MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 12A Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 10000 V Voltage - Forward (Vf) (Max) @ If: 10 V @ 12 A Current - Reverse Leakage @ Vr: 4 µA @ 10000 V |
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| S4KW10C-5P | Semtech Corporation |
Description: DIODE GEN PURP 10KV 12A MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 12A Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 10000 V Voltage - Forward (Vf) (Max) @ If: 10 V @ 12 A Current - Reverse Leakage @ Vr: 4 µA @ 10000 V |
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| S4KW12C-6D | Semtech Corporation |
Description: DIODE GEN PURP 12KV 6A MODULE |
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| S4KW12C-6N | Semtech Corporation |
Description: DIODE GEN PURP 12KV 12A MODULE |
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| S4KW12C-6P | Semtech Corporation |
Description: DIODE GEN PURP 12KV 12A MODULE |
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| S4KW16KA-4 | Semtech Corporation |
Description: DIODE GEN PURP 16KV 6A MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 6A Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 16000 V Voltage - Forward (Vf) (Max) @ If: 16 V @ 12 A Current - Reverse Leakage @ Vr: 4 µA @ 16000 V |
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| S4KW2C-1D | Semtech Corporation |
Description: RECT ASSY DOUBLER 2KV 8A STD |
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| S4KW2C-1N | Semtech Corporation |
Description: RECT ASSY -CT 16A 2KV STD |
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| S4KW2C-1P | Semtech Corporation |
Description: RECT ASSY -+CT 16A 2KV STD |
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| S4KW4C-2D | Semtech Corporation |
Description: RECT ASSY DOUBLER 4KV 6A STD |
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| S4KW4C-2N | Semtech Corporation |
Description: RECT ASSY -CT 12A 4KV STD |
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| S4KW4C-2P | Semtech Corporation |
Description: RECT ASSY -+CT 12A 4KV STD |
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| S4KW4KA-1 | Semtech Corporation |
Description: DIODE GEN PURP 4KV 8A MODULE |
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| S4KW6C-3D | Semtech Corporation |
Description: RECT ASSY DOUBLER 6KV 6A STD |
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| S4KW6C-3N | Semtech Corporation |
Description: RECT ASSY -CT 12A 6KV STD |
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| S4KW6C-3P | Semtech Corporation |
Description: RECT ASSY -+CT 12A 6KV STD |
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| S4KW8C-4D | Semtech Corporation |
Description: RECT ASSY DOUBLER 8KV 6A STD |
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| S4KW8C-4N | Semtech Corporation |
Description: RECT ASSY -CT 12A 8KV STD |
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| S4KW8C-4P | Semtech Corporation |
Description: RECT ASSY -+CT 12A 8KV STD |
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| S6HVM2.5 | Semtech Corporation |
Description: DIODE GEN PURP 2.5KV 4A MODULE |
товар відсутній |
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| S6HVM2.5F | Semtech Corporation |
Description: DIODE GEN PURP 2.5KV 4A MODULE |
товар відсутній |
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| S6HVM5 | Semtech Corporation |
Description: DIODE GEN PURP 5KV 2.4A MODULE |
товар відсутній |
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| S6M | Semtech Corporation |
Description: DIODE GEN PURP 600V 2A AXIAL |
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| SBMA05F | Semtech Corporation |
Description: BRIDGE RECT 1PHASE 50V 1.5A |
товар відсутній |
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| SBMA1 | Semtech Corporation | Description: BRIDGE RECT 1PHASE 100V 1.5A |
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| SBMA1F | Semtech Corporation |
Description: BRIDGE RECT 1PHASE 100V 1.5A |
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| SBMA2F | Semtech Corporation |
Description: BRIDGE RECT 1PHASE 200V 1.5A |
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| SBMA4F | Semtech Corporation |
Description: BRIDGE RECT 1.5A 400V |
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| SBMA6F | Semtech Corporation |
Description: BRIDGE RECT 1PHASE 600V 1.5A |
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| SBMB1 | Semtech Corporation | Description: BRIDGE RECT 1PHASE 100V 1.5A |
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| SBMB1F | Semtech Corporation |
Description: BRIDGE RECT 1.5A 100V 4SIP |
товар відсутній |
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| SBMB4F | Semtech Corporation |
Description: BRIDGE RECT 1.5A 400V 4SIP |
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| SBMB6F | Semtech Corporation |
Description: BRIDGE RECT 1PHASE 600V 1.5A Packaging: Bulk Package / Case: 4-SIP Mounting Type: Through Hole Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 600 V |
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| SBMB8 | Semtech Corporation |
Description: BRIDGE RECT 1.5A 800V 4SIP |
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| SBMC1F | Semtech Corporation |
Description: BRIDGE RECT 1PHASE 100V 1.5A |
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| SBMC4 | Semtech Corporation |
Description: BRIDGE RECT 1PHASE 400V 1.5A |
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| SBMC6 | Semtech Corporation |
Description: BRIDGE RECT 1.5A 600V 4SIP |
товар відсутній |
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| SBMC6F | Semtech Corporation |
Description: BRIDGE RECT 1PHASE 600V 1.5A |
товар відсутній |
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| SBR05 | Semtech Corporation |
Description: BRIDGE RECT 1.5A 50V |
товар відсутній |
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| SBR1 | Semtech Corporation |
Description: BRIDGE RECT 1.5A 100V |
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| SBR10 | Semtech Corporation |
Description: BRIDGE RECT 1.5A 100V |
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| SBR10F | Semtech Corporation |
Description: BRIDGE RECT 1PHASE 100V 1.5A Packaging: Bulk Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 1000 V |
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| SBR1F | Semtech Corporation |
Description: BRIDGE RECT 1.5A 100V |
товар відсутній |
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| SBR2 | Semtech Corporation |
Description: BRIDGE RECT 1.5A 200V |
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| SBR2F | Semtech Corporation |
Description: BRIDGE RECT 1.5A 200V |
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| SBR4 | Semtech Corporation |
Description: BRIDGE RECT 1.5A 400V |
товар відсутній |
| S3HVM10 |
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Виробник: Semtech Corporation
Description: DIODE GEN PURP 10KV 1.2A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Current - Average Rectified (Io): 1.2A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 11.5 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 10000 V
Description: DIODE GEN PURP 10KV 1.2A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Current - Average Rectified (Io): 1.2A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 11.5 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 10000 V
товар відсутній
| S4KW10C-5D |
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Виробник: Semtech Corporation
Description: DIODE GEN PURP 10KV 6A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 6 A
Current - Reverse Leakage @ Vr: 4 µA @ 10000 V
Description: DIODE GEN PURP 10KV 6A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 6 A
Current - Reverse Leakage @ Vr: 4 µA @ 10000 V
товар відсутній
| S4KW10C-5N |
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Виробник: Semtech Corporation
Description: DIODE GEN PURP 10KV 12A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 12A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 12 A
Current - Reverse Leakage @ Vr: 4 µA @ 10000 V
Description: DIODE GEN PURP 10KV 12A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 12A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 12 A
Current - Reverse Leakage @ Vr: 4 µA @ 10000 V
товар відсутній
| S4KW10C-5P |
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Виробник: Semtech Corporation
Description: DIODE GEN PURP 10KV 12A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 12A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 12 A
Current - Reverse Leakage @ Vr: 4 µA @ 10000 V
Description: DIODE GEN PURP 10KV 12A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 12A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 12 A
Current - Reverse Leakage @ Vr: 4 µA @ 10000 V
товар відсутній
| S4KW16KA-4 |
Виробник: Semtech Corporation
Description: DIODE GEN PURP 16KV 6A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 16000 V
Voltage - Forward (Vf) (Max) @ If: 16 V @ 12 A
Current - Reverse Leakage @ Vr: 4 µA @ 16000 V
Description: DIODE GEN PURP 16KV 6A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 16000 V
Voltage - Forward (Vf) (Max) @ If: 16 V @ 12 A
Current - Reverse Leakage @ Vr: 4 µA @ 16000 V
товар відсутній
| SBMB6F |
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Виробник: Semtech Corporation
Description: BRIDGE RECT 1PHASE 600V 1.5A
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 1.5A
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
товар відсутній
| SBR10F |
Виробник: Semtech Corporation
Description: BRIDGE RECT 1PHASE 100V 1.5A
Packaging: Bulk
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 100V 1.5A
Packaging: Bulk
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
товар відсутній