Продукція > YANGZHOU YANGJIE ELECTRONIC TECHNOLOGY CO.,LTD > Всі товари виробника YANGZHOU YANGJIE ELECTRONIC TECHNOLOGY CO.,LTD (1774) > Сторінка 13 з 30
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
HER208G-D1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: DIODE GEN PURP 1000V 2A DO15 |
товар відсутній |
||||||||||||||
HER208G-D1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: DIODE GEN PURP 1000V 2A DO15 |
товар відсутній |
||||||||||||||
HER303G-D1-3000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: DIODE GEN PURP 200V 3A DO201AD |
товар відсутній |
||||||||||||||
HER303G-D1-3000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: DIODE GEN PURP 200V 3A DO201AD |
товар відсутній |
||||||||||||||
HER307G-D1-3000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: DIODE GEN PURP 800V 3A DO201AD |
товар відсутній |
||||||||||||||
HER307G-D1-3000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: DIODE GEN PURP 800V 3A DO201AD |
товар відсутній |
||||||||||||||
HER508G | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 1KV 5A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 52pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-201AD (DO-27) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current - Reverse Leakage @ Vr: 2.5 µA @ 1000 V |
товар відсутній |
||||||||||||||
HER508G | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 1KV 5A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 52pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-201AD (DO-27) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current - Reverse Leakage @ Vr: 2.5 µA @ 1000 V |
товар відсутній |
||||||||||||||
HS1B-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: DIODE GEN PURP 100V 1A DO214AC |
товар відсутній |
||||||||||||||
HS1B-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: DIODE GEN PURP 100V 1A DO214AC |
товар відсутній |
||||||||||||||
HS1M-F1-3000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: DIODE GEN PURP 1000V 1A DO214AC |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
HS1M-F1-3000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: DIODE GEN PURP 1000V 1A DO214AC |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
HS2J-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: DIODE GEN PURP 600V 2A DO214AA |
товар відсутній |
||||||||||||||
HS2J-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: DIODE GEN PURP 600V 2A DO214AA |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
HS2K-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: DIODE GEN PURP 800V 2A DO214AA |
товар відсутній |
||||||||||||||
HS2K-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: DIODE GEN PURP 800V 2A DO214AA |
товар відсутній |
||||||||||||||
HS2MA-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: HE DIODE 1000V 2A SMA |
товар відсутній |
||||||||||||||
HS2MA-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: HE DIODE 1000V 2A SMA |
товар відсутній |
||||||||||||||
HS2M-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: DIODE GEN PURP 1000V 2A DO214AA |
товар відсутній |
||||||||||||||
HS2M-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: DIODE GEN PURP 1000V 2A DO214AA |
товар відсутній |
||||||||||||||
HS3F | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 300V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
товар відсутній |
||||||||||||||
HS3F | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 300V 3A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
товар відсутній |
||||||||||||||
HS3F-F1-3000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: DIODE GEN PURP 300V 3A DO214AB |
товар відсутній |
||||||||||||||
HS3F-F1-3000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: DIODE GEN PURP 300V 3A DO214AB |
товар відсутній |
||||||||||||||
HS3K | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 800V 3A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товар відсутній |
||||||||||||||
HS3K | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 800V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товар відсутній |
||||||||||||||
HS3M-F1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: DIODE GEN PURP 1000V 3A DO214AB |
товар відсутній |
||||||||||||||
HS3M-F1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: DIODE GEN PURP 1000V 3A DO214AB |
товар відсутній |
||||||||||||||
HS5G | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 400V 5A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 85pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товар відсутній |
||||||||||||||
HS5G | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 400V 5A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 85pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товар відсутній |
||||||||||||||
HS5M-F1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: DIODE GEN PURP 1000V 5A DO214AB |
товар відсутній |
||||||||||||||
HS5M-F1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: DIODE GEN PURP 1000V 5A DO214AB |
товар відсутній |
||||||||||||||
KBJ1006 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: RECT BRIDGE 600V 10A 4KBJ |
товар відсутній |
||||||||||||||
KBJ1010 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 10A 4KBJ Packaging: Tube Package / Case: 4-ESIP, KBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4KBJ Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товар відсутній |
||||||||||||||
KBJ1510 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 15A 4KBJ Packaging: Tube Package / Case: 4-ESIP, KBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4KBJ Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товар відсутній |
||||||||||||||
KBJ1510-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: RECT BRIDGE 1000V 15A 4KBJ |
товар відсутній |
||||||||||||||
KBJ406-B1-3000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: RECT BRIDGE 600V 4A 4KBJ |
товар відсутній |
||||||||||||||
KBJ408 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: RECT BRIDGE 800V 4A 4KBJ |
товар відсутній |
||||||||||||||
KBJ408-B1-3000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: RECT BRIDGE 800V 4A 4KBJ |
товар відсутній |
||||||||||||||
KBJ606 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 600V 6A 4KBJ Packaging: Tube Package / Case: 4-ESIP, KBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4KBJ Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товар відсутній |
||||||||||||||
KBJ610 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 6A 4KBJ Packaging: Tube Package / Case: 4-ESIP, KBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4KBJ Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товар відсутній |
||||||||||||||
KBJ610-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: RECT BRIDGE 1000V 6A 4KBJ |
товар відсутній |
||||||||||||||
KBJ810-B1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: RECT BRIDGE 1000V 8A 4KBJ |
товар відсутній |
||||||||||||||
KBL406-A1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: RECT BRIDGE 600V 4A KBL |
на замовлення 498 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
KBL410-A1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: RECT BRIDGE 1000V 4A KBL |
на замовлення 332 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
KBL610-A1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: RECT BRIDGE 1000V 6A KBL |
на замовлення 85 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
KBP208-A1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: RECT BRIDGE 800V 2A KBP |
на замовлення 498 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
KBP210-A1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: RECT BRIDGE 1000V 2A KBP |
на замовлення 58 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
KBP306 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: RECT BRIDGE 600V 3A KBP |
товар відсутній |
||||||||||||||
KBP306-A1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: RECT BRIDGE 600V 3A KBP |
товар відсутній |
||||||||||||||
KBP308 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: RECT BRIDGE 800V 3A KBP |
товар відсутній |
||||||||||||||
KBP308-A1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: RECT BRIDGE 800V 3A KBP |
товар відсутній |
||||||||||||||
KBP310-A1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: RECT BRIDGE 1000V 3A KBP |
на замовлення 298 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
KBPC1506W-A1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: RECT BRIDGE 600V 15A GBPCW-G |
товар відсутній |
||||||||||||||
KBPC1510-A1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: RECT BRIDGE 1000V 15A GBPC25 |
товар відсутній |
||||||||||||||
KBPC2510-A1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: RECT BRIDGE 1000V 25A GBPC25 |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
||||||||||||||
KBPC2510W-A1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: RECT BRIDGE 1000V 25A GBPCW-G |
товар відсутній |
||||||||||||||
KBPC3506-A1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: RECT BRIDGE 600V 35A GBPC25 |
товар відсутній |
||||||||||||||
KBPC5006-A1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: RECT BRIDGE 600V 50A GBPC50-G |
товар відсутній |
||||||||||||||
KBPC5008-A1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: RECT BRIDGE 800V 50A GBPC50-G |
товар відсутній |
HER208G-D1-0000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 2A DO15
Description: DIODE GEN PURP 1000V 2A DO15
товар відсутній
HER208G-D1-0000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 2A DO15
Description: DIODE GEN PURP 1000V 2A DO15
товар відсутній
HER303G-D1-3000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 3A DO201AD
Description: DIODE GEN PURP 200V 3A DO201AD
товар відсутній
HER303G-D1-3000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 3A DO201AD
Description: DIODE GEN PURP 200V 3A DO201AD
товар відсутній
HER307G-D1-3000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 3A DO201AD
Description: DIODE GEN PURP 800V 3A DO201AD
товар відсутній
HER307G-D1-3000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 3A DO201AD
Description: DIODE GEN PURP 800V 3A DO201AD
товар відсутній
HER508G |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 52pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD (DO-27)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 2.5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 52pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD (DO-27)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 2.5 µA @ 1000 V
товар відсутній
HER508G |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 52pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD (DO-27)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 2.5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 52pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD (DO-27)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 2.5 µA @ 1000 V
товар відсутній
HS1B-F1-0000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 100V 1A DO214AC
Description: DIODE GEN PURP 100V 1A DO214AC
товар відсутній
HS1B-F1-0000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 100V 1A DO214AC
Description: DIODE GEN PURP 100V 1A DO214AC
товар відсутній
HS1M-F1-3000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 1A DO214AC
Description: DIODE GEN PURP 1000V 1A DO214AC
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 5.86 грн |
HS1M-F1-3000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 1A DO214AC
Description: DIODE GEN PURP 1000V 1A DO214AC
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 34.09 грн |
12+ | 24.33 грн |
100+ | 13.82 грн |
500+ | 8.58 грн |
1000+ | 6.58 грн |
2000+ | 5.72 грн |
HS2J-F1-0000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 2A DO214AA
Description: DIODE GEN PURP 600V 2A DO214AA
товар відсутній
HS2J-F1-0000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 600V 2A DO214AA
Description: DIODE GEN PURP 600V 2A DO214AA
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 32.61 грн |
13+ | 23.41 грн |
100+ | 13.27 грн |
500+ | 8.25 грн |
1000+ | 6.32 грн |
HS2K-F1-0000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 2A DO214AA
Description: DIODE GEN PURP 800V 2A DO214AA
товар відсутній
HS2K-F1-0000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 2A DO214AA
Description: DIODE GEN PURP 800V 2A DO214AA
товар відсутній
HS2MA-F1-0000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: HE DIODE 1000V 2A SMA
Description: HE DIODE 1000V 2A SMA
товар відсутній
HS2MA-F1-0000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: HE DIODE 1000V 2A SMA
Description: HE DIODE 1000V 2A SMA
товар відсутній
HS2M-F1-0000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 2A DO214AA
Description: DIODE GEN PURP 1000V 2A DO214AA
товар відсутній
HS2M-F1-0000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 2A DO214AA
Description: DIODE GEN PURP 1000V 2A DO214AA
товар відсутній
HS3F |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 300V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
HS3F |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 300V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
HS3F-F1-3000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 300V 3A DO214AB
Description: DIODE GEN PURP 300V 3A DO214AB
товар відсутній
HS3F-F1-3000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 300V 3A DO214AB
Description: DIODE GEN PURP 300V 3A DO214AB
товар відсутній
HS3K |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
HS3K |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
HS3M-F1-0000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 3A DO214AB
Description: DIODE GEN PURP 1000V 3A DO214AB
товар відсутній
HS3M-F1-0000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 3A DO214AB
Description: DIODE GEN PURP 1000V 3A DO214AB
товар відсутній
HS5G |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 400V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
HS5G |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 400V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
HS5M-F1-0000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 5A DO214AB
Description: DIODE GEN PURP 1000V 5A DO214AB
товар відсутній
HS5M-F1-0000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1000V 5A DO214AB
Description: DIODE GEN PURP 1000V 5A DO214AB
товар відсутній
KBJ1006 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 10A 4KBJ
Description: RECT BRIDGE 600V 10A 4KBJ
товар відсутній
KBJ1010 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 10A 4KBJ
Packaging: Tube
Package / Case: 4-ESIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4KBJ
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: RECT BRIDGE 1000V 10A 4KBJ
Packaging: Tube
Package / Case: 4-ESIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4KBJ
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
KBJ1510 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 15A 4KBJ
Packaging: Tube
Package / Case: 4-ESIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4KBJ
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: RECT BRIDGE 1000V 15A 4KBJ
Packaging: Tube
Package / Case: 4-ESIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4KBJ
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
KBJ1510-B1-0000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 15A 4KBJ
Description: RECT BRIDGE 1000V 15A 4KBJ
товар відсутній
KBJ406-B1-3000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 4A 4KBJ
Description: RECT BRIDGE 600V 4A 4KBJ
товар відсутній
KBJ408 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 4A 4KBJ
Description: RECT BRIDGE 800V 4A 4KBJ
товар відсутній
KBJ408-B1-3000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 4A 4KBJ
Description: RECT BRIDGE 800V 4A 4KBJ
товар відсутній
KBJ606 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 6A 4KBJ
Packaging: Tube
Package / Case: 4-ESIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4KBJ
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: RECT BRIDGE 600V 6A 4KBJ
Packaging: Tube
Package / Case: 4-ESIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4KBJ
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
KBJ610 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 6A 4KBJ
Packaging: Tube
Package / Case: 4-ESIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4KBJ
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: RECT BRIDGE 1000V 6A 4KBJ
Packaging: Tube
Package / Case: 4-ESIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4KBJ
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
KBJ610-B1-0000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 6A 4KBJ
Description: RECT BRIDGE 1000V 6A 4KBJ
товар відсутній
KBJ810-B1-0000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 8A 4KBJ
Description: RECT BRIDGE 1000V 8A 4KBJ
товар відсутній
KBL406-A1-0000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 4A KBL
Description: RECT BRIDGE 600V 4A KBL
на замовлення 498 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 51.13 грн |
10+ | 43.17 грн |
100+ | 33.07 грн |
KBL410-A1-0000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 4A KBL
Description: RECT BRIDGE 1000V 4A KBL
на замовлення 332 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 50.39 грн |
10+ | 42.67 грн |
100+ | 32.71 грн |
KBL610-A1-0000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 6A KBL
Description: RECT BRIDGE 1000V 6A KBL
на замовлення 85 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 54.84 грн |
10+ | 46.53 грн |
KBP208-A1-0000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 2A KBP
Description: RECT BRIDGE 800V 2A KBP
на замовлення 498 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.12 грн |
11+ | 25.97 грн |
100+ | 19.4 грн |
KBP210-A1-0000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 2A KBP
Description: RECT BRIDGE 1000V 2A KBP
на замовлення 58 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.86 грн |
11+ | 26.4 грн |
KBP306 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 3A KBP
Description: RECT BRIDGE 600V 3A KBP
товар відсутній
KBP306-A1-0000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 3A KBP
Description: RECT BRIDGE 600V 3A KBP
товар відсутній
KBP308 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 3A KBP
Description: RECT BRIDGE 800V 3A KBP
товар відсутній
KBP308-A1-0000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 3A KBP
Description: RECT BRIDGE 800V 3A KBP
товар відсутній
KBP310-A1-0000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 3A KBP
Description: RECT BRIDGE 1000V 3A KBP
на замовлення 298 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 37.79 грн |
10+ | 30.83 грн |
100+ | 23.04 грн |
KBPC1506W-A1-0000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 15A GBPCW-G
Description: RECT BRIDGE 600V 15A GBPCW-G
товар відсутній
KBPC1510-A1-0000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 15A GBPC25
Description: RECT BRIDGE 1000V 15A GBPC25
товар відсутній
KBPC2510-A1-0000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 25A GBPC25
Description: RECT BRIDGE 1000V 25A GBPC25
на замовлення 1 шт:
термін постачання 21-31 дні (днів)KBPC2510W-A1-0000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 25A GBPCW-G
Description: RECT BRIDGE 1000V 25A GBPCW-G
товар відсутній
KBPC3506-A1-0000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 35A GBPC25
Description: RECT BRIDGE 600V 35A GBPC25
товар відсутній
KBPC5006-A1-0000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 600V 50A GBPC50-G
Description: RECT BRIDGE 600V 50A GBPC50-G
товар відсутній
KBPC5008-A1-0000 |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 50A GBPC50-G
Description: RECT BRIDGE 800V 50A GBPC50-G
товар відсутній