BFN19H6327XTSA1

BFN19H6327XTSA1 Infineon Technologies


bfn19.pdf Виробник: Infineon Technologies
Trans GP BJT PNP 300V 0.2A 1000mW Automotive 4-Pin(3+Tab) SOT-89 T/R
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Description: TRANS PNP 300V 0.2A SOT89, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V, Frequency - Transition: 100MHz, Supplier Device Package: PG-SOT89, Grade: Automotive, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 1 W, Qualification: AEC-Q101.

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BFN19H6327XTSA1 BFN19H6327XTSA1 Виробник : Infineon Technologies bfn19.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449c1d62e0238 Description: TRANS PNP 300V 0.2A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Qualification: AEC-Q101
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BFN19H6327XTSA1 BFN19H6327XTSA1 Виробник : Infineon Technologies Infineon-BFN19-DS-v01_01-en-1226085.pdf Bipolar Transistors - BJT AF TRANSISTORS
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