на замовлення 2961 шт:
термін постачання 119-128 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 450.12 грн |
10+ | 380.19 грн |
25+ | 299.93 грн |
100+ | 275.39 грн |
250+ | 259.03 грн |
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Технічний опис FCB070N65S3 onsemi / Fairchild
Description: MOSFET N-CH 650V 44A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 22A, 10V, Power Dissipation (Max): 312W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4.4mA, Supplier Device Package: TO-263 (D2Pak), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V.
Інші пропозиції FCB070N65S3
Фото | Назва | Виробник | Інформація |
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FCB070N65S3 | Виробник : ON Semiconductor | Trans MOSFET N-CH 650V 44A 3-Pin(2+Tab) D2PAK T/R |
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FCB070N65S3 | Виробник : ON Semiconductor | Trans MOSFET N-CH 650V 44A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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FCB070N65S3 | Виробник : ON Semiconductor | Trans MOSFET N-CH 650V 44A 3-Pin(2+Tab) D2PAK T/R |
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FCB070N65S3 | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 44A Power dissipation: 312W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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FCB070N65S3 | Виробник : onsemi |
Description: MOSFET N-CH 650V 44A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 22A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4.4mA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V |
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FCB070N65S3 | Виробник : onsemi |
Description: MOSFET N-CH 650V 44A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 22A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4.4mA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V |
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FCB070N65S3 | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 44A Power dissipation: 312W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |