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B2D30120HC1 B2D30120HC1 BASiC SEMICONDUCTOR B2D30120HC1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 95W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Max. load current: 30A
Power dissipation: 95W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 135A
Max. forward voltage: 1.75V
Leakage current: 40µA
кількість в упаковці: 1 шт
на замовлення 46 шт:
термін постачання 7-14 дні (днів)
1+681.9 грн
3+ 466.73 грн
7+ 424.43 грн
150+ 421.84 грн
600+ 408.9 грн
B2D40065H1 BASiC SEMICONDUCTOR B2D40065H1 THT Schottky diodes
на замовлення 31 шт:
термін постачання 7-14 дні (днів)
1+922.52 грн
2+ 559.87 грн
5+ 529.68 грн
B2D40065HC1 BASiC SEMICONDUCTOR B2D40065HC1 THT Schottky diodes
на замовлення 62 шт:
термін постачання 7-14 дні (днів)
1+679.11 грн
3+ 426.16 грн
7+ 402.86 грн
B2D40120H1 B2D40120H1 BASiC SEMICONDUCTOR B2D40120H1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
1+1060.63 грн
2+ 705.95 грн
4+ 667.84 грн
10+ 667.13 грн
B2D40120H1 B2D40120H1 BASiC SEMICONDUCTOR B2D40120H1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 7-14 дні (днів)
1+1272.76 грн
2+ 879.72 грн
4+ 801.41 грн
10+ 800.55 грн
B2D40120HC1 B2D40120HC1 BASiC SEMICONDUCTOR B2D40120HC1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 112W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Max. load current: 40A
Power dissipation: 112W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 180A
Max. forward voltage: 1.92V
Leakage current: 30µA
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
1+757.15 грн
2+ 491.72 грн
5+ 464.4 грн
B2D40120HC1 B2D40120HC1 BASiC SEMICONDUCTOR B2D40120HC1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 112W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Max. load current: 40A
Power dissipation: 112W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 180A
Max. forward voltage: 1.92V
Leakage current: 30µA
кількість в упаковці: 1 шт
на замовлення 77 шт:
термін постачання 7-14 дні (днів)
1+908.58 грн
2+ 612.76 грн
5+ 557.28 грн
600+ 544.34 грн
B2D60120H1 B2D60120H1 BASiC SEMICONDUCTOR B2D60120H1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; 361W; TO247-2
Type of diode: Schottky rectifying
Case: TO247-2
Mounting: THT
Max. forward voltage: 2.1V
Power dissipation: 361W
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 60A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 70µA
Max. forward impulse current: 340A
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+923.6 грн
3+ 810.9 грн
B2D60120H1 B2D60120H1 BASiC SEMICONDUCTOR B2D60120H1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; 361W; TO247-2
Type of diode: Schottky rectifying
Case: TO247-2
Mounting: THT
Max. forward voltage: 2.1V
Power dissipation: 361W
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 60A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 70µA
Max. forward impulse current: 340A
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 7-14 дні (днів)
1+1108.32 грн
3+ 1010.51 грн
B2M035120YP B2M035120YP BASiC SEMICONDUCTOR B2M035120YP.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 60A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 115nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 190A
Case: TO247PLUS-4
товар відсутній
B2M035120YP B2M035120YP BASiC SEMICONDUCTOR B2M035120YP.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 60A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 115nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 190A
Case: TO247PLUS-4
кількість в упаковці: 1 шт
товар відсутній
B2M065120H B2M065120H BASiC SEMICONDUCTOR B2M065120H.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Polarisation: unipolar
Case: TO247-3
Power dissipation: 250W
Kind of package: tube
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 33A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
1+725.41 грн
2+ 514 грн
5+ 485.97 грн
B2M065120H B2M065120H BASiC SEMICONDUCTOR B2M065120H.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Polarisation: unipolar
Case: TO247-3
Power dissipation: 250W
Kind of package: tube
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 33A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 7-14 дні (днів)
1+870.49 грн
2+ 640.53 грн
5+ 583.16 грн
30+ 577.12 грн
B2M065120R B2M065120R BASiC SEMICONDUCTOR B2M065120R.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Polarisation: unipolar
Case: TO263-7
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: SMD
Drain-source voltage: 1.2kV
Drain current: 24A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
1+751.73 грн
2+ 534.13 грн
5+ 504.66 грн
30+ 500.34 грн
B2M065120R B2M065120R BASiC SEMICONDUCTOR B2M065120R.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Polarisation: unipolar
Case: TO263-7
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: SMD
Drain-source voltage: 1.2kV
Drain current: 24A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 7-14 дні (днів)
1+902.08 грн
2+ 665.61 грн
5+ 605.59 грн
30+ 600.41 грн
B2M065120Z B2M065120Z BASiC SEMICONDUCTOR B2M065120Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Polarisation: unipolar
Case: TO247-4
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 33A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
товар відсутній
B2M065120Z B2M065120Z BASiC SEMICONDUCTOR B2M065120Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Polarisation: unipolar
Case: TO247-4
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 33A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
BGH40N120HF BGH40N120HF BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
BGH40N120HF BGH40N120HF BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
BGH40N120HS1 BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
BGH40N120HS1 BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
BGH50N65HF1 BGH50N65HF1 BASiC SEMICONDUCTOR BGH50N65HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 256ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
BGH50N65HF1 BGH50N65HF1 BASiC SEMICONDUCTOR BGH50N65HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 256ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
BGH50N65HS1 BGH50N65HS1 BASiC SEMICONDUCTOR BGH50N65HS1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 256ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
1+874.83 грн
2+ 594.52 грн
4+ 561.45 грн
BGH50N65HS1 BGH50N65HS1 BASiC SEMICONDUCTOR BGH50N65HS1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 256ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 37 шт:
термін постачання 7-14 дні (днів)
1+1049.79 грн
2+ 740.86 грн
4+ 673.74 грн
150+ 648.72 грн
600+ 647.86 грн
BGH50N65ZF1 BGH50N65ZF1 BASiC SEMICONDUCTOR BGH50N65ZF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 476ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
1+771.86 грн
2+ 531.98 грн
5+ 502.5 грн
BGH50N65ZF1 BGH50N65ZF1 BASiC SEMICONDUCTOR BGH50N65ZF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 476ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 26 шт:
термін постачання 7-14 дні (днів)
1+926.23 грн
2+ 662.92 грн
5+ 603 грн
150+ 580.57 грн
BGH75N120HF1 BGH75N120HF1 BASiC SEMICONDUCTOR BGH75N120HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 568W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 398nC
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 443ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
BGH75N120HF1 BGH75N120HF1 BASiC SEMICONDUCTOR BGH75N120HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 568W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 398nC
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 443ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
BGH75N65HF1 BGH75N65HF1 BASiC SEMICONDUCTOR BGH75N65HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 405W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-on time: 104ns
Turn-off time: 376ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
BGH75N65HF1 BGH75N65HF1 BASiC SEMICONDUCTOR BGH75N65HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 405W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-on time: 104ns
Turn-off time: 376ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
BGH75N65ZF1 BGH75N65ZF1 BASiC SEMICONDUCTOR BGH75N65ZF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 405W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 565ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+853.15 грн
2+ 585.89 грн
4+ 553.54 грн
BGH75N65ZF1 BGH75N65ZF1 BASiC SEMICONDUCTOR BGH75N65ZF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 405W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 565ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 7-14 дні (днів)
1+1023.78 грн
2+ 730.11 грн
4+ 664.25 грн
150+ 638.37 грн
BTD21520EAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520EAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520EAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520EAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520EBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520EBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520EBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520EBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520MAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520MAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520MAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520MAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520MBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520MBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520MBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520MBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520SAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520SAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520SAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520SAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520SBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520SBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520SBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520SBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD5350EBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP8; 10A; Ch: 1; 3÷18VDC; 3kV
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: 10A
Type of integrated circuit: driver
Number of channels: 1
Insulation voltage: 3kV
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOP8
Supply voltage: 3...18V DC
товар відсутній
BTD5350EBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP8; 10A; Ch: 1; 3÷18VDC; 3kV
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: 10A
Type of integrated circuit: driver
Number of channels: 1
Insulation voltage: 3kV
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOP8
Supply voltage: 3...18V DC
кількість в упаковці: 1 шт
товар відсутній
BTD5350EBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW8; 10A; Ch: 1; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: 10A
Type of integrated circuit: driver
Number of channels: 1
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW8
Supply voltage: 3...18V DC
товар відсутній
B2D30120HC1 B2D30120HC1.pdf
B2D30120HC1
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 95W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Max. load current: 30A
Power dissipation: 95W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 135A
Max. forward voltage: 1.75V
Leakage current: 40µA
кількість в упаковці: 1 шт
на замовлення 46 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+681.9 грн
3+ 466.73 грн
7+ 424.43 грн
150+ 421.84 грн
600+ 408.9 грн
B2D40065H1
Виробник: BASiC SEMICONDUCTOR
B2D40065H1 THT Schottky diodes
на замовлення 31 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+922.52 грн
2+ 559.87 грн
5+ 529.68 грн
B2D40065HC1
Виробник: BASiC SEMICONDUCTOR
B2D40065HC1 THT Schottky diodes
на замовлення 62 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+679.11 грн
3+ 426.16 грн
7+ 402.86 грн
B2D40120H1 B2D40120H1.pdf
B2D40120H1
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1060.63 грн
2+ 705.95 грн
4+ 667.84 грн
10+ 667.13 грн
B2D40120H1 B2D40120H1.pdf
B2D40120H1
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+1272.76 грн
2+ 879.72 грн
4+ 801.41 грн
10+ 800.55 грн
B2D40120HC1 B2D40120HC1.pdf
B2D40120HC1
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 112W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Max. load current: 40A
Power dissipation: 112W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 180A
Max. forward voltage: 1.92V
Leakage current: 30µA
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+757.15 грн
2+ 491.72 грн
5+ 464.4 грн
B2D40120HC1 B2D40120HC1.pdf
B2D40120HC1
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 112W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Max. load current: 40A
Power dissipation: 112W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 180A
Max. forward voltage: 1.92V
Leakage current: 30µA
кількість в упаковці: 1 шт
на замовлення 77 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+908.58 грн
2+ 612.76 грн
5+ 557.28 грн
600+ 544.34 грн
B2D60120H1 B2D60120H1.pdf
B2D60120H1
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; 361W; TO247-2
Type of diode: Schottky rectifying
Case: TO247-2
Mounting: THT
Max. forward voltage: 2.1V
Power dissipation: 361W
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 60A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 70µA
Max. forward impulse current: 340A
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+923.6 грн
3+ 810.9 грн
B2D60120H1 B2D60120H1.pdf
B2D60120H1
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; 361W; TO247-2
Type of diode: Schottky rectifying
Case: TO247-2
Mounting: THT
Max. forward voltage: 2.1V
Power dissipation: 361W
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 60A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 70µA
Max. forward impulse current: 340A
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+1108.32 грн
3+ 1010.51 грн
B2M035120YP B2M035120YP.pdf
B2M035120YP
Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 60A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 115nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 190A
Case: TO247PLUS-4
товар відсутній
B2M035120YP B2M035120YP.pdf
B2M035120YP
Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 60A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 115nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 190A
Case: TO247PLUS-4
кількість в упаковці: 1 шт
товар відсутній
B2M065120H B2M065120H.pdf
B2M065120H
Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Polarisation: unipolar
Case: TO247-3
Power dissipation: 250W
Kind of package: tube
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 33A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+725.41 грн
2+ 514 грн
5+ 485.97 грн
B2M065120H B2M065120H.pdf
B2M065120H
Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Polarisation: unipolar
Case: TO247-3
Power dissipation: 250W
Kind of package: tube
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 33A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+870.49 грн
2+ 640.53 грн
5+ 583.16 грн
30+ 577.12 грн
B2M065120R B2M065120R.pdf
B2M065120R
Виробник: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Polarisation: unipolar
Case: TO263-7
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: SMD
Drain-source voltage: 1.2kV
Drain current: 24A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+751.73 грн
2+ 534.13 грн
5+ 504.66 грн
30+ 500.34 грн
B2M065120R B2M065120R.pdf
B2M065120R
Виробник: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Polarisation: unipolar
Case: TO263-7
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: SMD
Drain-source voltage: 1.2kV
Drain current: 24A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+902.08 грн
2+ 665.61 грн
5+ 605.59 грн
30+ 600.41 грн
B2M065120Z B2M065120Z.pdf
B2M065120Z
Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Polarisation: unipolar
Case: TO247-4
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 33A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
товар відсутній
B2M065120Z B2M065120Z.pdf
B2M065120Z
Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Polarisation: unipolar
Case: TO247-4
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 33A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
BGH40N120HF
BGH40N120HF
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
BGH40N120HF
BGH40N120HF
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
BGH40N120HS1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
BGH40N120HS1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
BGH50N65HF1 BGH50N65HF1.pdf
BGH50N65HF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 256ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
BGH50N65HF1 BGH50N65HF1.pdf
BGH50N65HF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 256ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
BGH50N65HS1 BGH50N65HS1.pdf
BGH50N65HS1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 256ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+874.83 грн
2+ 594.52 грн
4+ 561.45 грн
BGH50N65HS1 BGH50N65HS1.pdf
BGH50N65HS1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 256ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 37 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+1049.79 грн
2+ 740.86 грн
4+ 673.74 грн
150+ 648.72 грн
600+ 647.86 грн
BGH50N65ZF1 BGH50N65ZF1.pdf
BGH50N65ZF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 476ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+771.86 грн
2+ 531.98 грн
5+ 502.5 грн
BGH50N65ZF1 BGH50N65ZF1.pdf
BGH50N65ZF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 476ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 26 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+926.23 грн
2+ 662.92 грн
5+ 603 грн
150+ 580.57 грн
BGH75N120HF1 BGH75N120HF1.pdf
BGH75N120HF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 568W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 398nC
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 443ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
BGH75N120HF1 BGH75N120HF1.pdf
BGH75N120HF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 568W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 398nC
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 443ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
BGH75N65HF1 BGH75N65HF1.pdf
BGH75N65HF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 405W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-on time: 104ns
Turn-off time: 376ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
BGH75N65HF1 BGH75N65HF1.pdf
BGH75N65HF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 405W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-on time: 104ns
Turn-off time: 376ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
BGH75N65ZF1 BGH75N65ZF1.pdf
BGH75N65ZF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 405W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 565ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+853.15 грн
2+ 585.89 грн
4+ 553.54 грн
BGH75N65ZF1 BGH75N65ZF1.pdf
BGH75N65ZF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 405W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 565ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+1023.78 грн
2+ 730.11 грн
4+ 664.25 грн
150+ 638.37 грн
BTD21520EAPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520EAPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520EAWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520EAWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520EBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520EBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520EBWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520EBWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520MAPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520MAPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520MAWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520MAWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520MBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520MBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520MBWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520MBWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520SAPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520SAPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520SAWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520SAWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520SBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520SBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520SBWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520SBWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD5350EBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP8; 10A; Ch: 1; 3÷18VDC; 3kV
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: 10A
Type of integrated circuit: driver
Number of channels: 1
Insulation voltage: 3kV
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOP8
Supply voltage: 3...18V DC
товар відсутній
BTD5350EBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP8; 10A; Ch: 1; 3÷18VDC; 3kV
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: 10A
Type of integrated circuit: driver
Number of channels: 1
Insulation voltage: 3kV
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOP8
Supply voltage: 3...18V DC
кількість в упаковці: 1 шт
товар відсутній
BTD5350EBWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW8; 10A; Ch: 1; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: 10A
Type of integrated circuit: driver
Number of channels: 1
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW8
Supply voltage: 3...18V DC
товар відсутній
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