B2M065120R BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Polarisation: unipolar
Case: TO263-7
Kind of package: tube
Power dissipation: 150W
Features of semiconductor devices: Kelvin terminal
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: SMD
Drain-source voltage: 1.2kV
Drain current: 24A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Polarisation: unipolar
Case: TO263-7
Kind of package: tube
Power dissipation: 150W
Features of semiconductor devices: Kelvin terminal
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: SMD
Drain-source voltage: 1.2kV
Drain current: 24A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 729.51 грн |
2+ | 507.19 грн |
5+ | 479.51 грн |
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Технічний опис B2M065120R BASiC SEMICONDUCTOR
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W, Polarisation: unipolar, Case: TO263-7, Kind of package: tube, Power dissipation: 150W, Features of semiconductor devices: Kelvin terminal, Gate charge: 60nC, Technology: SiC, Kind of channel: enhanced, Gate-source voltage: -4...18V, Pulsed drain current: 85A, Mounting: SMD, Drain-source voltage: 1.2kV, Drain current: 24A, On-state resistance: 65mΩ, Type of transistor: N-MOSFET, кількість в упаковці: 1 шт.
Інші пропозиції B2M065120R за ціною від 575.41 грн до 875.42 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||
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B2M065120R | Виробник : BASiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W Polarisation: unipolar Case: TO263-7 Kind of package: tube Power dissipation: 150W Features of semiconductor devices: Kelvin terminal Gate charge: 60nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...18V Pulsed drain current: 85A Mounting: SMD Drain-source voltage: 1.2kV Drain current: 24A On-state resistance: 65mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
на замовлення 50 шт: термін постачання 7-14 дні (днів) |
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