Результат пошуку "70n15" : 18
Вид перегляду :
Мінімальне замовлення: 6
Мінімальне замовлення: 4
| Фото | Назва | Виробник | Інформація |
Доступність |
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FDD770N15A | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 18A Power dissipation: 56.8W Case: DPAK Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 224 шт: термін постачання 21-30 дні (днів) |
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FDD770N15A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 18A Power dissipation: 56.8W Case: DPAK Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 224 шт: термін постачання 7-14 дні (днів) |
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| IXFH70N15 | IXYS |
09+ DFN |
на замовлення 2000 шт: термін постачання 14-28 дні (днів) |
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| IXFH70N15 | IXYS |
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на замовлення 2100 шт: термін постачання 14-28 дні (днів) |
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FDD770N15A Код товару: 100267 |
Транзистори > Польові N-канальні |
товар відсутній
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FQA70N15 Код товару: 103658 |
Транзистори > Польові N-канальні |
товар відсутній
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FDD770N15A | ON Semiconductor |
Trans MOSFET N-CH Si 150V 18A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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FDPF770N15A | ON Semiconductor |
Trans MOSFET N-CH Si 150V 10A 3-Pin(3+Tab) TO-220FP Tube |
товар відсутній |
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FQA70N15 | ON Semiconductor |
Trans MOSFET N-CH 150V 70A 3-Pin(3+Tab) TO-3P Tube |
товар відсутній |
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| IXFH170N15X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 150V Drain current: 170A Pulsed drain current: 340A Power dissipation: 520W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 90ns |
товар відсутній |
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| IXFH170N15X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 150V Drain current: 170A Pulsed drain current: 340A Power dissipation: 520W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 90ns кількість в упаковці: 1 шт |
товар відсутній |
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| IXFQ170N15X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 150V Drain current: 170A Pulsed drain current: 340A Power dissipation: 520W Case: TO3P Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 90ns |
товар відсутній |
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| IXFQ170N15X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 150V Drain current: 170A Pulsed drain current: 340A Power dissipation: 520W Case: TO3P Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 90ns кількість в упаковці: 1 шт |
товар відсутній |
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MKS4S034706J00KSSD | WIMA |
Category: THT Film Capacitors Description: Capacitor: polyester; 470nF; 400VAC; 1.5kVDC; 27.5mm; ±10%; THT Type of capacitor: polyester Capacitors series: MKT Capacitance: 0.47µF Body dimensions: 20x39.5x31.5mm Mounting: THT Tolerance: ±10% Terminal pitch: 27.5mm Capacitors features: increased service life capacitors Operating temperature: -55...100°C Pulse resistance: 20V/μs Kind of capacitor: low ESR Capacitor application: decoupling; energy storage; filtering Flammability rating: UL94V-0 Kind of material: flame retardant Max. operating voltage: 400V AC; 1.5kV DC кількість в упаковці: 486 шт |
товар відсутній |
| FDD770N15A |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 224 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 69.48 грн |
| 8+ | 47.45 грн |
| 21+ | 38.98 грн |
| 57+ | 36.9 грн |
| FDD770N15A |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 224 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.37 грн |
| 5+ | 59.13 грн |
| 21+ | 46.78 грн |
| 57+ | 44.28 грн |
| 500+ | 42.7 грн |
| FDD770N15A |
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Виробник: ON Semiconductor
Trans MOSFET N-CH Si 150V 18A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH Si 150V 18A 3-Pin(2+Tab) DPAK T/R
товар відсутній
| FDPF770N15A |
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Виробник: ON Semiconductor
Trans MOSFET N-CH Si 150V 10A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH Si 150V 10A 3-Pin(3+Tab) TO-220FP Tube
товар відсутній
| FQA70N15 |
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Виробник: ON Semiconductor
Trans MOSFET N-CH 150V 70A 3-Pin(3+Tab) TO-3P Tube
Trans MOSFET N-CH 150V 70A 3-Pin(3+Tab) TO-3P Tube
товар відсутній
| IXFH170N15X3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
товар відсутній
| IXFH170N15X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
кількість в упаковці: 1 шт
товар відсутній
| IXFQ170N15X3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
товар відсутній
| IXFQ170N15X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
кількість в упаковці: 1 шт
товар відсутній
| MKS4S034706J00KSSD |
|
Виробник: WIMA
Category: THT Film Capacitors
Description: Capacitor: polyester; 470nF; 400VAC; 1.5kVDC; 27.5mm; ±10%; THT
Type of capacitor: polyester
Capacitors series: MKT
Capacitance: 0.47µF
Body dimensions: 20x39.5x31.5mm
Mounting: THT
Tolerance: ±10%
Terminal pitch: 27.5mm
Capacitors features: increased service life capacitors
Operating temperature: -55...100°C
Pulse resistance: 20V/μs
Kind of capacitor: low ESR
Capacitor application: decoupling; energy storage; filtering
Flammability rating: UL94V-0
Kind of material: flame retardant
Max. operating voltage: 400V AC; 1.5kV DC
кількість в упаковці: 486 шт
Category: THT Film Capacitors
Description: Capacitor: polyester; 470nF; 400VAC; 1.5kVDC; 27.5mm; ±10%; THT
Type of capacitor: polyester
Capacitors series: MKT
Capacitance: 0.47µF
Body dimensions: 20x39.5x31.5mm
Mounting: THT
Tolerance: ±10%
Terminal pitch: 27.5mm
Capacitors features: increased service life capacitors
Operating temperature: -55...100°C
Pulse resistance: 20V/μs
Kind of capacitor: low ESR
Capacitor application: decoupling; energy storage; filtering
Flammability rating: UL94V-0
Kind of material: flame retardant
Max. operating voltage: 400V AC; 1.5kV DC
кількість в упаковці: 486 шт
товар відсутній