Production > 2SA

Part numberManufacturerDescriptionAvailabilityPrice VAT not included
2SAWELLER EREMDescription: WELLER EREM - 2SA - Pinzette, Präzisionspinzette, gerade, spitz, Edelstahl, 115mm
tariffCode: 82032000
productTraceability: No
Pinzettenmaterial: Edelstahl
Pinzettentyp: Präzision
rohsCompliant: NA
Pinzettenspitzenmaterial: Edelstahl
euEccn: NLR
Pinzettenspitze: Gerade, spitz
Gesamtlänge: 115
hazardous: false
Ausführung der Spitzen: -
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Produktpalette: -
SVHC: No SVHC (27-Jun-2018)
available 12 pc(s)
lead time 21-31 days
1+ 1435.68 UAH
5+ 1363.89 UAH
2SAApex Tool GroupPliers & Tweezers Erem 4.5" Tweezer Anti-Magntic Fine Ptavailable 5 pc(s)
lead time 14-21 days
2SAWellerTools and Accessories, Access Tweezer And Anti-Magnetic And Fine Pointavailable 4 pc(s)
lead time 21-31 days
1+ 1797 UAH
2SAWELLERMaterial: WEL.2SA Precision Tweezersout of stock
2SAApex Tool GroupDescription: TWEEZER POINTED MEDIUM 4.50"out of stock
2SAWELLERMaterial: WEL.2SA Precision Tweezersout of stock
2SA(MSA)1162GT1MOTavailable 6000 pc(s)
lead time 14-28 days
2SA00025Cavailable 1500 pc(s)
lead time 14-28 days
2SA06830RPanasonic Electronic ComponentsDescription: TRANS PNP 25V 1A TO-92Lout of stock
2SA06840RPanasonic Electronic ComponentsDescription: TRANS PNP 50V 1A TO-92Lout of stock
2SA06840SPanasonic Electronic ComponentsDescription: TRANS PNP 50V 1A TO-92Lout of stock
2SA07200RAPanasonic Electronic ComponentsDescription: TRANS PNP 50V 0.5A TO-92out of stock
2SA07200RAPanasonic Electronic ComponentsDescription: TRANS PNP 50V 0.5A TO-92out of stock
2SA0720ARAPanasonic Electronic ComponentsDescription: TRANS PNP 70V 0.5A TO-92out of stock
2SA0720ARAPanasonic Electronic ComponentsDescription: TRANS PNP 70V 0.5A TO-92available 86 pc(s)
lead time 21-31 days
2SA07770QPanasonic Electronic ComponentsDescription: TRANS PNP 80V 0.5A TO-92Lout of stock
2SA07770RPanasonic Electronic ComponentsDescription: TRANS PNP 80V 0.5A TO-92Lout of stock
2SA07940RPanasonic Electronic ComponentsDescription: TRANS PNP 100V 0.5A TO-126out of stock
2SA0794ARPanasonic Electronic ComponentsDescription: TRANS PNP 120V 0.5A TO126B-A1
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 150mA, 10V
Frequency - Transition: 120MHz
Supplier Device Package: TO-126B-A1
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.2 W
out of stock
2SA08790QPanasonic Electronic ComponentsDescription: TRANS PNP 200V 0.07A TO-92Lout of stock
2SA08850RPanasonic Electronic ComponentsDescription: TRANS PNP 35V 1A TO126B-A1out of stock
2SA08860QPanasonic Electronic ComponentsDescription: TRANS PNP 40V 1.5A TO-126out of stock
2SA09000RPanasonic Electronic ComponentsDescription: TRANS PNP 18V 1A TO-126out of stock
2SA09140RPanasonic Electronic ComponentsDescription: TRANS PNP 150V 0.05A TO-126out of stock
2SA0963Panasonic Electronic ComponentsDescription: TRANS PNP 40V 1.5A TO126A-A1
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126A-A1
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 10 W
out of stock
2SA100NECCANavailable 627 pc(s)
lead time 14-28 days
2SA1001TOS03+ TO-3available 2500 pc(s)
lead time 14-28 days
2SA1002TOS03+ TO-3available 2500 pc(s)
lead time 14-28 days
2SA1003TOS03+ TO-3available 2500 pc(s)
lead time 14-28 days
2SA1006B-AZRenesas Electronics America IncDescription: POWER BIPOLAR TRANSISTOR, PNPout of stock
2SA1007TOS03+ TO-3available 2500 pc(s)
lead time 14-28 days
2SA1007Aavailable 100 pc(s)
lead time 14-28 days
2SA1008(4)-S6-AZRenesas Electronics America IncDescription: POWER BIPOLAR TRANSISTOR, PNPavailable 3370 pc(s)
lead time 21-31 days
309+ 63.49 UAH
2SA1008-AZRenesas Electronics America IncDescription: POWER BIPOLAR TRANSISTOR, PNPavailable 25668 pc(s)
lead time 21-31 days
309+ 63.49 UAH
2SA1008-YOFSCavailable 60000 pc(s)
lead time 14-28 days
2SA1009-AZRenesas ElectronicsRenesas Electronicsout of stock
2SA1009-AZRenesas Electronics America IncDescription: POWER BIPOLAR TRANSISTOR, PNPavailable 3973 pc(s)
lead time 21-31 days
198+ 99.49 UAH
2SA1009ANECTO-220Favailable 740 pc(s)
lead time 14-28 days
2SA1009A
Product id: 168655
Transistors > Bipolar PNP
2SA1009Aavailable 2100 pc(s)
lead time 14-28 days
2SA1009ANECTO-220available 8200 pc(s)
lead time 14-28 days
2SA1009ANECavailable 2100 pc(s)
lead time 14-28 days
2SA101N/Aavailable 6200 pc(s)
lead time 14-28 days
2SA101available 6200 pc(s)
lead time 14-28 days
2SA101NECCANavailable 837 pc(s)
lead time 14-28 days
2SA1010(0)-S12-AZRenesas ElectronicsBipolar Transistors - BJTout of stock
2SA1010(05)-AZRenesas ElectronicsRenesas Electronicsout of stock
2SA1010-AZRenesas ElectronicsBipolar Transistors - BJTout of stock
2SA1011
Product id: 152622
SavanticTransistors > Bipolar PNP
Корпус: TO-220C
fT: 100 MHz
Uке, В: 160 V
Uкб, В: 180 V
Iк, А: 1,15 A
2SA1012HTC10+available 10000 pc(s)
lead time 14-28 days
2SA1012
Product id: 30147
Transistors > Bipolar PNP
Корпус: TO-220
fT: 60 MHz
Uке, В: 50 V
Uкб, В: 60 V
Iк, А: 5 A
h21,max: 240
7 pcs - stock Kyiv
16 pcs - RADIOMAG-Kyiv
11 pcs - RADIOMAG-Lviv
17 pcs - RADIOMAG-Kharkiv
6 pcs - RADIOMAG-Dnipro
5 pcs - waiting
1+ 22.5 UAH
10+ 20.9 UAH
2SA1012available 2500 pc(s)
lead time 14-28 days
2SA1012Toshiban/aavailable 51 pc(s)
lead time 14-28 days
2SA1012-APMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1012-APMicro Commercial CoDescription: TRANS PNP 50V 5A TO220AB
Packaging: Tape & Box (TB)
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 1V
Frequency - Transition: 60MHz
Supplier Device Package: TO-220AB
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 25 W
out of stock
2SA1012-BPMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1012-TPMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1012-Yavailable 1574 pc(s)
lead time 14-28 days
2SA1012-YTOS09+available 16648 pc(s)
lead time 14-28 days
2SA1012-YToshibaBipolar Transistors - BJT Pb 220AB2 PLS PLN-N,DISCON(03-04)/PHASE-OUT(04-07)/OBSOLETE(07-07),DISCON-->2007-04-27out of stock
2SA1012LUTC05+ TO252available 2500 pc(s)
lead time 14-28 days
2SA1012L-TM3-RUTC07+available 10000 pc(s)
lead time 14-28 days
2SA1012L-TN3-RUTC07+available 10000 pc(s)
lead time 14-28 days
2SA1012RDiotec SemiconductorDescription: BJT, DPAK, -50V, -5000MA, 0
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 1V
Frequency - Transition: 60MHz
Supplier Device Package: TO-252-3 (DPAK)
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 15 W
out of stock
2SA1012RDIOTEC SEMICONDUCTORMaterial: 2SA1012R-DIO PNP SMD transistorsout of stock
2SA1012RDiotec SemiconductorBipolar Transistors - BJT BJT, DPAK, -50V, -5000mA, PNPavailable 2990 pc(s)
lead time 176-183 days
4+ 88.56 UAH
10+ 74.31 UAH
25+ 57.28 UAH
100+ 48.56 UAH
500+ 43.35 UAH
1000+ 41.66 UAH
3000+ 41.59 UAH
2SA1012RDIOTEC SEMICONDUCTORMaterial: 2SA1012R-DIO PNP SMD transistorsout of stock
2SA1013 (KSA1013); биполярный; PNP; 160V; 1A; 0,9W; 50Mhz; Корпус: TO-92L; KEC (Korea)available 126 pc(s)
lead time 2-3 days
110+ 5.76 UAH
2SA1013-OKESENES09+available 35334 pc(s)
lead time 14-28 days
2SA1013-OTOSHIBA07+ TSOPavailable 192 pc(s)
lead time 14-28 days
2SA1013-O,T6MIBF(JToshiba Semiconductor and StorageDescription: TRANS PNP 160V 1A TO92L
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92L
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
out of stock
2SA1013-O-APMicro Commercial CoDescription: TRANS PNP 160V 1A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
out of stock
2SA1013-O-BPMicro Commercial ComponentsTrans GP BJT PNP 160V 1A 900mW 3-Pin TO-92 Mod Bulkout of stock
2SA1013-O-BPMicro Commercial CoDescription: TRANS PNP 160V 1A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
out of stock
2SA1013-R-APMicro Commercial CoDescription: TRANS PNP 160V 1A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
out of stock
2SA1013-Y
Product id: 30631
ToshibaTransistors > Bipolar PNP
Корпус: TO-92L
fT: 50 MHz
Uке, В: 160 V
Uкб, В: 160 V
Iк, А: 1 A
h21,max: 200
492 pcs - stock Kyiv
87 pcs - RADIOMAG-Kyiv
24 pcs - RADIOMAG-Lviv
22 pcs - RADIOMAG-Kharkiv
20 pcs - RADIOMAG-Odesa
177 pcs - RADIOMAG-Dnipro
1+ 6 UAH
10+ 5 UAH
100+ 4.3 UAH
2SA1013-Y(ROHS)available 82000 pc(s)
lead time 14-28 days
2SA1013-Y(ROHS)TOSHIBAavailable 82000 pc(s)
lead time 14-28 days
2SA1013-Y-APMicro Commercial CoDescription: TRANS PNP 160V 1A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
out of stock
2SA1013-Y-BPMicro Commercial CoDescription: TRANS PNP 160V 1A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
out of stock
2SA1013-YOavailable 60000 pc(s)
lead time 14-28 days
2SA1015(ROHS)available 78000 pc(s)
lead time 14-28 days
2SA1015(ROHS)TOSHIBAavailable 78000 pc(s)
lead time 14-28 days
2SA1015-GRTOSHIBA0918+ TO-92available 3000 pc(s)
lead time 14-28 days
2SA1015-GRToshibaBipolar Transistors - BJT TO-92 PLN(LF),DISCON(07-10)/PHASE-OUT(10-04)/OBSOLETE(10-07),out of stock
2SA1015-GRavailable 50000 pc(s)
lead time 14-28 days
2SA1015-GRTOS08+;available 1200 pc(s)
lead time 14-28 days
2SA1015-GRTOSHIBA 0916+ TO-92available 6000 pc(s)
lead time 14-28 days
2SA1015-GR(F,T)ToshibaBipolar Transistors - BJT Discrete Semiconductor Products - TRANS PNP 50V 150MA TO-92 - Transistors (BJT) - Singleout of stock
2SA1015-GR(ROHS)TOSHIBAavailable 2100 pc(s)
lead time 14-28 days
2SA1015-GR(ROHS)available 2100 pc(s)
lead time 14-28 days
2SA1015-GR(TE2,F,TToshibaTrans GP BJT PNP 50V 0.15A 3-Pin TO-92 T/Rout of stock
2SA1015-GR(TE2,F,T)ToshibaBipolar Transistors - BJT Discrete Semiconductor Products - TRANS PNP 50V 150MA TO-92 - Transistors (BJT) - Singleout of stock
2SA1015-GR(TE2FTToshibaBipolar Transistors - BJTout of stock
2SA1015-GR(TPE2)ToshibaBipolar Transistors - BJT TO-92 PLN(LF),DISCON(07-10)/PHASE-OUT(09-07)/OBSOLETE(10-04),out of stock
2SA1015-GR(TPE2,F)ToshibaBipolar Transistors - BJT Pb-F TO-92 PLN(LF),ACTIVE,out of stock
2SA1015-GR-APMicro Commercial ComponentsTrans GP BJT PNP 50V 0.15A 400mW 3-Pin TO-92 Ammoout of stock
2SA1015-GR-APMicro Commercial CoDescription: TRANS PNP 50V 0.15A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
out of stock
2SA1015-GR-APMicro Commercial Components (MCC)Bipolar Transistors - BJT PNP Silicon Plastic-Encapsulate Transistoravailable 19789 pc(s)
lead time 14-21 days
9+ 33.67 UAH
11+ 26.98 UAH
100+ 16 UAH
500+ 11.98 UAH
2SA1015-GR-BPMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1015-GR-BPMicro Commercial CoDescription: TRANS PNP 50V 0.15A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
out of stock
2SA1015-GR-TPMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1015-GRYavailable 50000 pc(s)
lead time 14-28 days
2SA1015-OMicro Commercial Components (MCC)MCC PNP TRANSISTORout of stock
2SA1015-O(F,T)ToshibaBipolar Transistors - BJT Discrete Semiconductor Products - TRANS PNP 50V 150MA TO-92 - Transistors (BJT) - Singleout of stock
2SA1015-O(TE2,F,T)ToshibaBipolar Transistors - BJT Discrete Semiconductor Products - TRANS PNP 50V 150MA TO-92 - Transistors (BJT) - Singleout of stock
2SA1015-O-APMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1015-O-APMicro Commercial CoDescription: TRANS PNP 50V 0.15A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
out of stock
2SA1015-O-BPMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1015-O-TPMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1015-TIBavailable 1450 pc(s)
lead time 14-28 days
2SA1015-YToshibaBipolar Transistors - BJT TO-92 PLN(LF),DISCON(07-10)/PHASE-OUT(10-04)/OBSOLETE(10-07),out of stock
2SA1015-Yavailable 20000 pc(s)
lead time 14-28 days
2SA1015-Y(F)TOSHIBATO92available 5400 pc(s)
lead time 14-28 days
2SA1015-Y(F,T)ToshibaBipolar Transistors - BJT Discrete Semiconductor Products - TRANS PNP 50V 150MA TO-92 - Transistors (BJT) - Singleout of stock
2SA1015-Y(TE2)available 2100 pc(s)
lead time 14-28 days
2SA1015-Y(TE2)TOSHIBAavailable 2100 pc(s)
lead time 14-28 days
2SA1015-Y(TE2,F,T)ToshibaBipolar Transistors - BJT Discrete Semiconductor Products - TRANS PNP 50V 150MA TO-92 - Transistors (BJT) - Singleout of stock
2SA1015-Y(TE2,T)ToshibaBipolar Transistors - BJT TO-92 PLN(LF),ACTIVE,DISCON(07-10)/PHASE-OUT(09-01)/OBSOLETE(09-04),out of stock
2SA1015-Y(TPE2)ToshibaBipolar Transistors - BJT TO-92 PLN(LF),DISCON(07-10)/PHASE-OUT(10-04)/OBSOLETE(10-07),out of stock
2SA1015-Y-APMicro Commercial Components (MCC)Bipolar Transistors - BJT PNP Silicon Plastic-Encapsulate Transistorout of stock
2SA1015-Y-APMicro Commercial CoDescription: TRANS PNP 50V 0.15A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
out of stock
2SA1015-Y-APMicro Commercial ComponentsTrans GP BJT PNP 50V 0.15A 400mW 3-Pin TO-92 Ammoout of stock
2SA1015-Y-APMicro Commercial ComponentsTrans GP BJT PNP 50V 0.15A 3-Pin TO-92 Ammoout of stock
2SA1015-Y-BPMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1015-Y-BPMicro Commercial CoDescription: TRANS PNP 50V 0.15A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
out of stock
2SA1015-Y-TPMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1015-Y/GRavailable 60000 pc(s)
lead time 14-28 days
2SA1015-Y/GRTOSHIBAavailable 60000 pc(s)
lead time 14-28 days
2SA1015-YT2SPTTOS07+;available 3000 pc(s)
lead time 14-28 days
2SA1015GR
Product id: 25436
ToshibaTransistors > Bipolar PNP
Корпус: TO-92
fT: 80 MHz
Uке, В: 50 V
Uкб, В: 50 V
Iк, А: 0,15 A
h21,max: 200...400
3 pcs - RADIOMAG-Kyiv
66 pcs - RADIOMAG-Kharkiv
3 pcs - RADIOMAG-Dnipro
300 pcs - waiting 23.06.2023
1+ 5 UAH
10+ 4.5 UAH
100+ 4.1 UAH
2SA1015LT1 BASOT23/SOT323available 1578 pc(s)
lead time 14-28 days
2SA1015OTE2TToshibaBipolar Transistors - BJT x34 Pb Small Signal Transistorout of stock
2SA1015Y
Product id: 108505
ToshibaTransistors > Bipolar PNP
Корпус: TO-92
fT: 80 MHz
Uке, В: 50 V
Uкб, В: 50 V
Iк, А: 0,15 A
13 pcs - stock Kyiv
50 pcs - RADIOMAG-Kyiv
20 pcs - RADIOMAG-Lviv
28 pcs - RADIOMAG-Dnipro
1+ 5 UAH
10+ 4.5 UAH
100+ 3.9 UAH
2SA1015Yavailable 50000 pc(s)
lead time 14-28 days
2SA1015YLEADFREE(BULK)available 27000 pc(s)
lead time 14-28 days
2SA1015YLEADFREE(BULK)TOSHIBAavailable 27000 pc(s)
lead time 14-28 days
2SA1016KGON SemiconductorTrans GP BJT PNP 120V 0.05A 400mW 3-Pin NPout of stock
2SA1016KGavailable 3107 pc(s)
lead time 14-28 days
2SA1016KG-AAonsemiDescription: SMALL SIGNAL BIPOLAR TRANS PNP
Packaging: Bulk
Part Status: Active
available 18070 pc(s)
lead time 21-31 days
2404+ 8.14 UAH
2SA1016KG-AAONSEMIDescription: ONSEMI - 2SA1016KG-AA - 2SA1016KG-AA, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: To Be Advised
available 18070 pc(s)
lead time 21-31 days
2680+ 10.42 UAH
2SA1018PanasonicTO-92available 6000 pc(s)
lead time 14-28 days
2SA10180RAPanasonic Electronic ComponentsDescription: TRANS PNP 200V 0.07A TO92-B1
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
out of stock
2SA10180RAPanasonic Electronic ComponentsDescription: TRANS PNP 200V 0.07A TO92-B1
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
out of stock
2SA1019available 16000 pc(s)
lead time 14-28 days
2SA102available 11500 pc(s)
lead time 14-28 days
2SA102NECCANavailable 461 pc(s)
lead time 14-28 days
2SA1020ToshibaToshibaout of stock
2SA1020LUGUANG ELECTRONICMaterial: 2SA1020-LGE PNP THT transistorsavailable 2785 pc(s)
lead time 21-30 days
540+ 2.61 UAH
734+ 1.78 UAH
815+ 1.6 UAH
1002+ 1.31 UAH
1520+ 1.23 UAH
2SA1020onsemiDescription: TRANS PNP 50V 2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020onsemiBipolar Transistors - BJT 1W High Current PNPout of stock
2SA1020-Transistor 2SA1020available 1400 pc(s)
lead time 5 days
2SA1020LUGUANG ELECTRONICMaterial: 2SA1020-LGE PNP THT transistorsavailable 2785 pc(s)
lead time 7-14 days
81+ 3.13 UAH
111+ 2.22 UAH
500+ 1.93 UAH
555+ 1.57 UAH
1520+ 1.48 UAH
2SA1020
Product id: 36910
ONTransistors > Bipolar PNP
Корпус: TO-92L
fT: 100 MHz
Uке, В: 50 V
Uкб, В: 50 V
Iк, А: 2 A
h21,max: 240
465 pcs - stock Kyiv
50 pcs - RADIOMAG-Kyiv
30 pcs - RADIOMAG-Lviv
1+ 10 UAH
10+ 8 UAH
2SA1020-O(F,M)ToshibaToshibaout of stock
2SA1020-O(F,M)Toshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-O(TE6,F,M)ToshibaToshibaout of stock
2SA1020-O(TE6,F,M)Toshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-O,CKF(JToshibaToshibaout of stock
2SA1020-O,CKF(JToshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-O,F(JToshibaToshibaout of stock
2SA1020-O,F(JToshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-O,T6CSF(JToshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-O,T6CSF(JToshibaToshibaout of stock
2SA1020-O-APMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1020-O-APMicro Commercial CoDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-O-BPMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1020-O-TPMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1020-Yavailable 3080 pc(s)
lead time 14-28 days
2SA1020-YTOSHIBA2007 TO-92available 3127 pc(s)
lead time 14-28 days
2SA1020-Y(6MBH1,AFToshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-Y(6MBH1,AFToshibaToshibaout of stock
2SA1020-Y(F,M)Toshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-Y(F,M)ToshibaToshibaout of stock
2SA1020-Y(HIT,F,M)Toshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-Y(HIT,F,M)ToshibaToshibaout of stock
2SA1020-Y(ND1,AF)Toshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-Y(ND1,AF)ToshibaToshibaout of stock
2SA1020-Y(T6CANO,CToshibaBipolar Transistors - BJT LSTM PLSPW PLN-N,DISCON(07-10)/PHASE-OUT(09-01)/OBSOLETE(10-04),out of stock
2SA1020-Y(T6CANOAFToshibaToshibaout of stock
2SA1020-Y(T6CANOAFToshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-Y(T6CANOFMToshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-Y(T6CANOFMToshibaToshibaout of stock
2SA1020-Y(T6CN,A,FToshibaToshibaout of stock
2SA1020-Y(T6CN,A,FToshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-Y(T6FJT,AFToshibaToshibaout of stock
2SA1020-Y(T6FJT,AFToshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-Y(T6ND1,AFToshibaToshibaout of stock
2SA1020-Y(T6ND1,AFToshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-Y(T6ND3,AFToshibaToshibaout of stock
2SA1020-Y(T6ND3,AFToshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-Y(T6OMI,FMToshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-Y(T6OMI,FMToshibaToshibaout of stock
2SA1020-Y(T6TOJ,FMToshibaToshibaout of stock
2SA1020-Y(T6TOJ,FMToshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-Y(T6TR,A,FToshibaToshibaout of stock
2SA1020-Y(T6TR,A,FToshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-Y(T6TR1,AFToshibaToshibaout of stock
2SA1020-Y(T6TR1,AFToshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-Y(TE6,C,M)ToshibaBipolar Transistors - BJT LSTM PLSPW PLN-N,ACTIVE,DISCON(07-10)/PHASE-OUT(09-01)/OBSOLETE(09-04),out of stock
2SA1020-Y(TE6,F,M)Toshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO-92out of stock
2SA1020-Y(TE6,F,M)ToshibaBipolar Transistors - BJT PNP -50V -2A 900mWout of stock
2SA1020-Y(TPE6,C)ToshibaBipolar Transistors - BJT LSTM PLSPW PLN-N,DISCON(07-10)/PHASE-OUT(10-04)/OBSOLETE(10-07),out of stock
2SA1020-Y(TPE6,F)ToshibaBipolar Transistors - BJT Pb-F LSTM PLSPW PLN-N,ACTIVE,out of stock
2SA1020-Y,F(JToshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-Y,F(JToshibaToshibaout of stock
2SA1020-Y,F(MToshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-Y,HOF(MToshibaToshibaout of stock
2SA1020-Y,HOF(MToshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-Y,T6F(JToshibaToshibaout of stock
2SA1020-Y,T6F(JToshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-Y,T6KEHF(MToshibaToshibaout of stock
2SA1020-Y,T6KEHF(MToshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-Y,T6NSF(JToshibaToshibaout of stock
2SA1020-Y,T6NSF(JToshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-Y,T6WNLF(JToshibaToshibaout of stock
2SA1020-Y,T6WNLF(JToshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-Y-APMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1020-Y-APMicro Commercial CoDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020-Y-BPMicro Commercial ComponentsTrans GP BJT PNP 50V 2A 900mW 3-Pin TO-92 Mod Bulkout of stock
2SA1020-Y-BPMicro Commercial Components (MCC)Bipolar Transistors - BJT PNP Medium Power Bipolar Transistorsout of stock
2SA1020-Y-TPMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1020A,NSEIKIF(JToshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020A,NSEIKIF(JToshibaToshibaout of stock
2SA1020A,T6CSF(JToshiba Semiconductor and StorageDescription: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020A,T6CSF(JToshibaToshibaout of stock
2SA1020GonsemiDescription: TRANS PNP 50V 2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020GonsemiBipolar Transistors - BJT 1W High Current PNPout of stock
2SA1020L-O-APMicro Commercial CoDescription: TRANS PNP 50V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020L-O-APMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1020L-O-BPMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1020L-O-TPMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1020L-Y-APMicro Commercial CoDescription: TRANS PNP 50V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020L-Y-APMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1020L-Y-BPMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1020L-Y-TPMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1020RLRAONSEMIDescription: ONSEMI - 2SA1020RLRA - 2SA1020RLRA, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: To Be Advised
available 310000 pc(s)
lead time 21-31 days
4580+ 6.4 UAH
2SA1020RLRAonsemiBipolar Transistors - BJT 1W High Current PNPout of stock
2SA1020RLRAON Semiconductoravailable 994 pc(s)
lead time 14-28 days
2SA1020RLRAonsemiDescription: TRANSISTOR SS PNP 50V 2A TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
available 310000 pc(s)
lead time 21-31 days
4121+ 4.75 UAH
2SA1020RLRAGonsemiDescription: TRANS PNP 50V 2A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020RLRAGON SemiconductorTrans GP BJT PNP 50V 2A 900mW 3-Pin TO-92 T/Rout of stock
2SA1020RLRAGON SemiconductorTrans GP BJT PNP 50V 2A 900mW 3-Pin TO-92 T/Rout of stock
2SA1020RLRAGonsemiDescription: TRANS PNP 50V 2A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
out of stock
2SA1020RLRAGON SemiconductorTrans GP BJT PNP 50V 2A 900mW 3-Pin TO-92 T/Rout of stock
2SA1020RLRAGonsemiDescription: TRANS PNP 50V 2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
available 48048 pc(s)
lead time 21-31 days
1803+ 11.54 UAH
2SA1020RLRAGON SemiconductorTrans GP BJT PNP 50V 2A 900mW 3-Pin TO-92 T/Rout of stock
2SA1020RLRAGONSEMIDescription: ONSEMI - 2SA1020RLRAG - TRANSISTOR, PNP, -50V, -2A, TO-92-3
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: To Be Advised
available 48048 pc(s)
lead time 21-31 days
2010+ 13.58 UAH
2SA1020RLRAGON SemiconductorTrans GP BJT PNP 50V 2A 900mW 3-Pin TO-92 T/Rout of stock
2SA1020RLRAGonsemiBipolar Transistors - BJT 1W High Current PNPout of stock
2SA1020YTOSHIBAavailable 2000 pc(s)
lead time 14-28 days
2SA1022-Bpanasonic09+available 6018 pc(s)
lead time 14-28 days
2SA1022-B(TX)PANASONIC03+ SOT-23available 2560 pc(s)
lead time 14-28 days
2SA1022-B(TX)PanasonicBipolar Transistors - BJT Discrete Semiconductor Products Transistors (BJT) - Single - TRANS PNP 20VCEO 30MA MINI-3Pout of stock
2SA1022-C(TX)PanasonicBipolar Transistors - BJT Discrete Semiconductor Products Transistors (BJT) - Single - TRANS PNP 20VCEO 30MA MINI-3Pout of stock
2SA10220BLPanasonic Electronic ComponentsDescription: TRANS PNP 20V 0.03A MINI-3Pout of stock
2SA10220BLPanasonic Electronic ComponentsDescription: TRANS PNP 20V 0.03A MINI-3Pout of stock
2SA10220CLPanasonic Electronic ComponentsDescription: TRANS PNP 20V 0.03A MINI-3Pavailable 3848 pc(s)
lead time 21-31 days
14+ 19.68 UAH
21+ 12.61 UAH
100+ 9.07 UAH
500+ 7.14 UAH
1000+ 6.71 UAH
2SA10220CLPanasonic Electronic ComponentsDescription: TRANS PNP 20V 0.03A MINI-3Pout of stock
2SA1023
Product id: 35499
Transistors > Bipolar PNP
2SA1024NECCANavailable 295 pc(s)
lead time 14-28 days
2SA1024
Product id: 153273
Transistors > Bipolar PNP
Корпус: TO-92
fT: 120 MHz
Uке, В: 150 V
Uкб, В: 150 V
Iк, А: 0,05 A
23 pcs - stock Kyiv
10 pcs - RADIOMAG-Lviv
1+ 18 UAH
2SA103NECCANavailable 843 pc(s)
lead time 14-28 days
2SA1034-SPANSOT-23available 400 pc(s)
lead time 14-28 days
2SA1034-S(TX)PANASONIC95+ SOT-23available 1230 pc(s)
lead time 14-28 days
2SA1034-TPANASONICN/A SOT-23available 2705 pc(s)
lead time 14-28 days
2SA1034-TF.TPANASONIC94+ SOT-23available 6100 pc(s)
lead time 14-28 days
2SA10340SLPanasonic Electronic ComponentsDescription: TRANS PNP 35V 0.05A MINI-3available 3000 pc(s)
lead time 21-31 days
2SA10340SLPanasonic Electronic ComponentsDescription: TRANS PNP 35V 0.05A MINI-3available 4518 pc(s)
lead time 21-31 days
2SA1035PANASONICavailable 4432 pc(s)
lead time 14-28 days
2SA1035-RTavailable 50 pc(s)
lead time 14-28 days
2SA1035-R<TX>PANASONICSOT23available 1150 pc(s)
lead time 14-28 days
2SA1035-S/HSPANASONICavailable 3000 pc(s)
lead time 14-28 days
2SA10350SLPanasonic Electronic ComponentsDescription: TRANS PNP 55V 0.05A MINI-3out of stock
2SA10350SLPanasonic Electronic ComponentsDescription: TRANS PNP 55V 0.05A MINI-3out of stock
2SA1036LUGUANG ELECTRONICMaterial: 2SA1036-LGE PNP SMD transistorsavailable 459 pc(s)
lead time 7-14 days
81+ 3.13 UAH
124+ 1.98 UAH
500+ 1.71 UAH
625+ 1.39 UAH
1710+ 1.32 UAH
2SA1036LUGUANG ELECTRONICMaterial: 2SA1036-LGE PNP SMD transistorsavailable 459 pc(s)
lead time 21-30 days
459+ 1.59 UAH
500+ 1.42 UAH
625+ 1.16 UAH
1710+ 1.1 UAH
2SA1036 T146RROHMSOT23available 6000 pc(s)
lead time 14-28 days
2SA1036-Kavailable 9800 pc(s)
lead time 14-28 days
2SA1036-P-APMicro Commercial CoDescription: TRANS PNP 32V 0.5A SOT23
Packaging: Tape & Box (TB)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
out of stock
2SA1036-QROHMSOT23available 15000 pc(s)
lead time 14-28 days
2SA1036-Q-TPMicro Commercial CoDescription: TRANSISTOR PNP SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
out of stock
2SA1036-RROHMSOT23available 9000 pc(s)
lead time 14-28 days
2SA1036-R-TPMicro Commercial CoDescription: TRANSISTOR PNP SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 10mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
out of stock
2SA1036/RROHMSOT-23available 3000 pc(s)
lead time 14-28 days
2SA1036AKROHM09+available 12038 pc(s)
lead time 14-28 days
2SA1036KROHMavailable 18000 pc(s)
lead time 14-28 days
2SA1036KROHMSOT23available 3000 pc(s)
lead time 14-28 days
2SA1036Kavailable 6000 pc(s)
lead time 14-28 days
2SA1036KROHM99+ SOT23available 3000 pc(s)
lead time 14-28 days
2SA1036KROHM SemiconductorBipolar Transistors - BJTout of stock
2SA1036KROHMSOT23/available 1909 pc(s)
lead time 14-28 days
2SA1036K T146QROHMSOT23available 1850 pc(s)
lead time 14-28 days
2SA1036K T146QROHMSOT-23available 12000 pc(s)
lead time 14-28 days
2SA1036K T146QROHMSOT23/SOT323available 2210 pc(s)
lead time 14-28 days
2SA1036K-QROHMSOT23available 3000 pc(s)
lead time 14-28 days
2SA1036K-RROHMSOT23available 2940 pc(s)
lead time 14-28 days
2SA1036K/RROHMSOT-23available 153000 pc(s)
lead time 14-28 days
2SA1036KFRAT146ROHMDescription: ROHM - 2SA1036KFRAT146 - Bipolarer Einzeltransistor (BJT), PNP, 32 V, 500 mA, 200 mW, SOT-346, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 120
hazardous: false
rohsPhthalatesCompliant: YES
DC-Stromverstärkung hFE: 120
Qualifikation: AEC-Q101
Dauer-Kollektorstrom: 500
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 200
Bauform - Transistor: SOT-346
Anzahl der Pins: 3
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 32
productTraceability: No
Wandlerpolarität: PNP
Übergangsfrequenz: 200
Betriebstemperatur, max.: 150
SVHC: No SVHC (17-Jan-2023)
available 2701 pc(s)
lead time 21-31 days
50+ 14.15 UAH
61+ 11.68 UAH
100+ 7.88 UAH
500+ 4.94 UAH
1000+ 3.58 UAH
2SA1036KFRAT146ROHMDescription: ROHM - 2SA1036KFRAT146 - Bipolarer Einzeltransistor (BJT), PNP, 32 V, 500 mA, 200 mW, SOT-346, Oberflächenmontage
tariffCode: 85412100
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 120
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Dauer-Kollektorstrom: 500
usEccn: EAR99
euEccn: NLR
Verlustleistung: 200
Kollektor-Emitter-Spannung, max.: 32
productTraceability: No
SVHC: No SVHC (17-Jan-2023)
available 2701 pc(s)
lead time 21-31 days
500+ 4.94 UAH
1000+ 3.58 UAH
2SA1036KFS T146QROHMSOT23available 6000 pc(s)
lead time 14-28 days
2SA1036KT146Pavailable 8500 pc(s)
lead time 14-28 days
2SA1036KT146PRohm SemiconductorDescription: TRANS PNP 32V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: SMT3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
out of stock
2SA1036KT146QROHM SEMICONDUCTORMaterial: 2SA1036KT146Q PNP SMD transistorsout of stock
2SA1036KT146QROHMDescription: ROHM - 2SA1036KT146Q - Bipolarer Einzeltransistor (BJT), PNP, 32 V, 500 mA, 200 mW, SOT-346, Oberflächenmontage
tariffCode: 85412100
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 120
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 500
usEccn: EAR99
euEccn: NLR
Verlustleistung: 200
Kollektor-Emitter-Spannung, max.: 32
productTraceability: Yes-Date/Lot Code
SVHC: No SVHC (17-Jan-2023)
available 2364 pc(s)
lead time 21-31 days
100+ 13.09 UAH
500+ 9.15 UAH
1000+ 6.39 UAH
2SA1036KT146Qavailable 75000 pc(s)
lead time 14-28 days
2SA1036KT146QRohm SemiconductorTrans GP BJT PNP 32V 0.5A 200mW 3-Pin SMT T/Ravailable 5100 pc(s)
lead time 21-31 days
750+ 13.61 UAH
2SA1036KT146QROHM SemiconductorBipolar Transistors - BJT PNP 32V 0.5Aavailable 257 pc(s)
lead time 14-21 days
10+ 30.3 UAH
12+ 24.67 UAH
100+ 14.62 UAH
500+ 10.98 UAH
1000+ 8.28 UAH
3000+ 7.03 UAH
9000+ 6.59 UAH
2SA1036KT146QRohm SemiconductorDescription: TRANS PNP 32V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
out of stock
2SA1036KT146QROHM SEMICONDUCTORMaterial: 2SA1036KT146Q PNP SMD transistorsout of stock
2SA1036KT146QROHMDescription: ROHM - 2SA1036KT146Q - Bipolarer Einzeltransistor (BJT), PNP, 32 V, 500 mA, 200 mW, SOT-346, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 120
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 500
usEccn: EAR99
euEccn: NLR
Verlustleistung: 200
Kollektor-Emitter-Spannung, max.: 32
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150
SVHC: No SVHC (17-Jan-2023)
available 2364 pc(s)
lead time 21-31 days
31+ 23.29 UAH
37+ 19.28 UAH
100+ 13.09 UAH
500+ 9.15 UAH
1000+ 6.39 UAH
2SA1036KT146QRohm SemiconductorTrans GP BJT PNP 32V 0.5A 200mW 3-Pin SMT T/Ravailable 1408 pc(s)
lead time 21-31 days
584+ 17.5 UAH
606+ 16.87 UAH
1000+ 16.32 UAH
2SA1036KT146QROHMSOT23available 6000 pc(s)
lead time 14-28 days
2SA1036KT146QRohm SemiconductorDescription: TRANS PNP 32V 0.5A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
available 2973 pc(s)
lead time 21-31 days
10+ 29.86 UAH
12+ 23.07 UAH
100+ 15.72 UAH
500+ 11.07 UAH
1000+ 8.3 UAH
2SA1036KT146RRohm SemiconductorDescription: TRANS PNP 32V 0.5A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
available 4 pc(s)
lead time 21-31 days
2SA1036KT146RROHM10+ SOT-23available 147800 pc(s)
lead time 14-28 days
2SA1036KT146RROHM SEMICONDUCTORMaterial: 2SA1036KT146R PNP SMD transistorsout of stock
2SA1036KT146RRohm SemiconductorTrans GP BJT PNP 32V 0.5A 200mW 3-Pin SMT T/Ravailable 15000 pc(s)
lead time 21-31 days
3000+ 3.82 UAH
2SA1036KT146R
Product id: 119370
Transistors > Bipolar PNP
2SA1036KT146RRohm SemiconductorDescription: TRANS PNP 32V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
out of stock
2SA1036KT146Ravailable 200790 pc(s)
lead time 14-28 days
2SA1036KT146RROHMSOT-23available 72000 pc(s)
lead time 14-28 days
2SA1036KT146RRohm SemiconductorTrans GP BJT PNP 32V 0.5A 200mW 3-Pin SMT T/Ravailable 12597 pc(s)
lead time 21-31 days
1669+ 6.12 UAH
1675+ 6.1 UAH
1987+ 5.14 UAH
2101+ 4.69 UAH
12000+ 3.91 UAH
2SA1036KT146RROHM SemiconductorBipolar Transistors - BJT PNP 32V 0.5Aavailable 2617 pc(s)
lead time 14-21 days
10+ 30.3 UAH
12+ 24.67 UAH
100+ 14.62 UAH
500+ 10.98 UAH
1000+ 8.28 UAH
3000+ 7.03 UAH
9000+ 6.59 UAH
2SA1036KT146RROHM SEMICONDUCTORMaterial: 2SA1036KT146R PNP SMD transistorsout of stock
2SA1036KT146Savailable 1500 pc(s)
lead time 14-28 days
2SA1037LUGUANG ELECTRONICMaterial: 2SA1037-LGE PNP SMD transistorsavailable 3935 pc(s)
lead time 21-30 days
540+ 2.61 UAH
824+ 1.59 UAH
918+ 1.42 UAH
1121+ 1.17 UAH
1700+ 1.1 UAH
2SA1037LUGUANG ELECTRONICMaterial: 2SA1037-LGE PNP SMD transistorsavailable 3935 pc(s)
lead time 7-14 days
81+ 3.13 UAH
124+ 1.98 UAH
500+ 1.71 UAH
620+ 1.4 UAH
1700+ 1.32 UAH
2SA1037-QYangjie Electronic Technology2SA1037-Qavailable 60000 pc(s)
lead time 21-31 days
11905+ 0.86 UAH
2SA1037-QYANGJIE TECHNOLOGYMaterial: 2SA1037-Q-YAN PNP SMD transistorsavailable 2600 pc(s)
lead time 21-30 days
675+ 2.09 UAH
1349+ 0.97 UAH
1499+ 0.87 UAH
1973+ 0.66 UAH
3000+ 0.63 UAH
2SA1037-QYangjie TechnologyDescription: Transistors - Bipolar (BJT) - Siavailable 300000 pc(s)
lead time 21-31 days
3000+ 0.99 UAH
15000+ 0.9 UAH
30000+ 0.84 UAH
60000+ 0.73 UAH
120000+ 0.67 UAH
300000+ 0.62 UAH
2SA1037-QYANGJIE TECHNOLOGYMaterial: 2SA1037-Q-YAN PNP SMD transistorsavailable 2600 pc(s)
lead time 7-14 days
102+ 2.5 UAH
203+ 1.21 UAH
500+ 1.05 UAH
1100+ 0.8 UAH
3000+ 0.75 UAH
2SA1037-Q-TPMicro Commercial CoDescription: Interfaceout of stock
2SA1037-Q-TPMicro Commercial Components (MCC)Bipolar Transistors - BJT PNP Plastic-Encapsulate Transistorsout of stock
2SA1037-RYANGJIE TECHNOLOGYMaterial: 2SA1037-R-YAN PNP SMD transistorsout of stock
2SA1037-RYANGJIE TECHNOLOGYMaterial: 2SA1037-R-YAN PNP SMD transistorsout of stock
2SA1037-RYangjie Electronic Technology2SA1037-Ravailable 48000 pc(s)
lead time 21-31 days
15307+ 0.67 UAH
2SA1037-RYangjie TechnologyDescription: SOT-23 PNP 0.2W -0.15A -60V Tranavailable 300000 pc(s)
lead time 21-31 days
3000+ 0.87 UAH
15000+ 0.78 UAH
30000+ 0.72 UAH
60000+ 0.62 UAH
120000+ 0.56 UAH
300000+ 0.5 UAH
2SA1037-R-TPMicro Commercial Components (MCC)Bipolar Transistors - BJT PNP Plastic-Encapsulate Transistorsout of stock
2SA1037-R-TPMicro Commercial ComponentsTrans GP BJT PNP 50V 0.15A 200mW 3-Pin SOT-23 T/Rout of stock
2SA1037-R-TPMicro Commercial CoDescription: Interfaceout of stock
2SA1037-SYangjie TechnologyDescription: Transistors - Bipolar (BJT) - Siavailable 300000 pc(s)
lead time 21-31 days
3000+ 0.93 UAH
15000+ 0.84 UAH
30000+ 0.78 UAH
60000+ 0.67 UAH
120000+ 0.62 UAH
300000+ 0.56 UAH
2SA1037-SYangjie Electronic Technology2SA1037-Savailable 60000 pc(s)
lead time 21-31 days
13393+ 0.76 UAH
2SA1037-SYANGJIE TECHNOLOGYMaterial: 2SA1037-S-YAN PNP SMD transistorsout of stock
2SA1037-SYANGJIE TECHNOLOGYMaterial: 2SA1037-S-YAN PNP SMD transistorsout of stock
2SA1037-S-APMicro Commercial CoDescription: TRANS PNP 50V 0.15A SOT23out of stock
2SA1037/2SC2412ROHMSOT-23available 10 pc(s)
lead time 14-28 days
2SA1037/2SC2412??ROHMSOT-23available 10000 pc(s)
lead time 14-28 days
2SA1037/FQROHMavailable 69371 pc(s)
lead time 14-28 days
2SA1037/RROHMSOT-23available 12000 pc(s)
lead time 14-28 days
2SA1037/SROHMSOT-23available 6000 pc(s)
lead time 14-28 days
2SA1037AROHM09+available 149018 pc(s)
lead time 14-28 days
2SA1037A/RROHMSOT-23available 6000 pc(s)
lead time 14-28 days
2SA1037AKROHMSOT23/SOT323available 2585 pc(s)
lead time 14-28 days
2SA1037AKavailable 4920 pc(s)
lead time 14-28 days
2SA1037AKROHM09+available 192038 pc(s)
lead time 14-28 days
2SA1037AKROHMSOT23/available 5824 pc(s)
lead time 14-28 days
2SA1037AKROHMavailable 49100 pc(s)
lead time 14-28 days
2SA1037AKROHM SemiconductorROHM Semiconductorout of stock
2SA1037AKROHMSOT23available 4531 pc(s)
lead time 14-28 days
2SA1037AK T146QROHM00+ SOT-23available 2142 pc(s)
lead time 14-28 days
2SA1037AK T146SROHM00+ SOT-23available 1642 pc(s)
lead time 14-28 days
2SA1037AK T146QROHMSOT23/SOT323available 1248 pc(s)
lead time 14-28 days
2SA1037AK T146QROHMSOT23available 11198 pc(s)
lead time 14-28 days
2SA1037AK T146QROHMavailable 3000 pc(s)
lead time 14-28 days
2SA1037AK T146RROHMSOT23/SOT323available 5807 pc(s)
lead time 14-28 days
2SA1037AK T146RROHMSOT23-FR PB-FREEavailable 14306 pc(s)
lead time 14-28 days
2SA1037AK T146R SOT23-FRROHMavailable 2773 pc(s)
lead time 14-28 days
2SA1037AK T146SROHMSOT-23 0435+available 15000 pc(s)
lead time 14-28 days
2SA1037AK T146SROHMSOT23-FSavailable 3000 pc(s)
lead time 14-28 days
2SA1037AK T146SROHMSOT23available 9000 pc(s)
lead time 14-28 days
2SA1037AK-QROHM07+ SOT-23available 1200 pc(s)
lead time 14-28 days
2SA1037AK-RROHM06+ SOT-23available 3000 pc(s)
lead time 14-28 days
2SA1037AK-R/2SA1037K-RROHM00+ SOT-23available 18000 pc(s)
lead time 14-28 days
2SA1037AK-SROHM06+ SOT-23available 3000 pc(s)
lead time 14-28 days
2SA1037AK-T146-RROHMavailable 1000 pc(s)
lead time 14-28 days
2SA1037AK-T146-Ravailable 1000 pc(s)
lead time 14-28 days
2SA1037AK-T146RROHMSOT23available 18780 pc(s)
lead time 14-28 days
2SA1037AK/FQROHMavailable 2000 pc(s)
lead time 14-28 days
2SA1037AK/FRavailable 1650 pc(s)
lead time 14-28 days
2SA1037AK/QROHMSOT-23available 78000 pc(s)
lead time 14-28 days
2SA1037AK/RROHMSOT-23available 6000 pc(s)
lead time 14-28 days
2SA1037AK/R/Xavailable 559 pc(s)
lead time 14-28 days
2SA1037AK/SROHMSOT-23available 3000 pc(s)
lead time 14-28 days
2SA1037AK146RROHMSOT23available 1040 pc(s)
lead time 14-28 days
2SA1037AK<T146Q>ROHMSOT23available 2866 pc(s)
lead time 14-28 days
2SA1037AKFROHMSOT23available 2639 pc(s)
lead time 14-28 days
2SA1037AKF-QROHMSOT23available 48000 pc(s)
lead time 14-28 days
2SA1037AKF-QROHM09+available 24018 pc(s)
lead time 14-28 days
2SA1037AKFRROHM00+ 23available 1600 pc(s)
lead time 14-28 days
2SA1037AKFSROHMSOT23available 493 pc(s)
lead time 14-28 days
2SA1037AKLT1LRC02+ SOT23available 30000 pc(s)
lead time 14-28 days
2SA1037AKQLT1GLRCSOT23available 45000 pc(s)
lead time 14-28 days
2SA1037AKRTOSHIBA00+ SOT23available 1987 pc(s)
lead time 14-28 days
2SA1037AKRLT1LRCSOT-23available 6000 pc(s)
lead time 14-28 days
2SA1037AKRLT1available 1000 pc(s)
lead time 14-28 days
2SA1037AKRLT1/2SA1037AK-RLRC07+ SOT-23available 3000 pc(s)
lead time 14-28 days
2SA1037AKT-146QROHM available 3000 pc(s)
lead time 14-28 days
2SA1037AKT-146Qavailable 3000 pc(s)
lead time 14-28 days
2SA1037AKT146ROHM SemiconductorROHM Semiconductorout of stock
2SA1037AKT146QRohm SemiconductorTrans GP BJT PNP 50V 0.15A 200mW 3-Pin SMT T/Ravailable 20900 pc(s)
lead time 21-31 days
1439+ 7.1 UAH
1487+ 6.87 UAH
2500+ 6.66 UAH
5000+ 6.25 UAH
10000+ 5.65 UAH
2SA1037AKT146Q
Product id: 177681
Other components
2SA1037AKT146QROHM SEMICONDUCTORMaterial: 2SA1037AKT146Q PNP SMD transistorsout of stock
2SA1037AKT146QRohm SemiconductorTrans GP BJT PNP 50V 0.15A 200mW 3-Pin SMT T/Ravailable 18000 pc(s)
lead time 21-31 days
5358+ 1.91 UAH
2SA1037AKT146QRohm SemiconductorDescription: TRANS PNP 50V 0.15A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
available 18000 pc(s)
lead time 21-31 days
3000+ 3.47 UAH
6000+ 2.91 UAH
15000+ 2.47 UAH
2SA1037AKT146QROHMSOT-23available 72000 pc(s)
lead time 14-28 days
2SA1037AKT146QRohm SemiconductorTrans GP BJT PNP 50V 0.15A 200mW 3-Pin SMT T/Ravailable 1595 pc(s)
lead time 21-31 days
1439+ 7.1 UAH
1487+ 6.87 UAH
2SA1037AKT146QROHM SEMICONDUCTORMaterial: 2SA1037AKT146Q PNP SMD transistorsout of stock
2SA1037AKT146QRohm SemiconductorTrans GP BJT PNP 50V 0.15A 200mW 3-Pin SMT T/Ravailable 31500 pc(s)
lead time 21-31 days
1439+ 7.1 UAH
1487+ 6.87 UAH
2500+ 6.66 UAH
5000+ 6.25 UAH
10000+ 5.65 UAH
25000+ 5.3 UAH
2SA1037AKT146Qavailable 100 pc(s)
lead time 14-28 days
2SA1037AKT146QRohm SemiconductorTrans GP BJT PNP 50V 0.15A 200mW 3-Pin SMT T/Ravailable 16655 pc(s)
lead time 21-31 days
1311+ 7.79 UAH
1316+ 7.76 UAH
1619+ 6.31 UAH
2000+ 5.69 UAH
12000+ 4.67 UAH
2SA1037AKT146QROHM SemiconductorBipolar Transistors - BJT PNP 50V 0.15Aavailable 8575 pc(s)
lead time 14-21 days
17+ 17.86 UAH
21+ 14.14 UAH
100+ 6.52 UAH
500+ 4.33 UAH
1000+ 2.95 UAH
3000+ 2.2 UAH
2SA1037AKT146QRohm SemiconductorDescription: TRANS PNP 50V 0.15A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
available 18758 pc(s)
lead time 21-31 days
15+ 19 UAH
18+ 15.23 UAH
100+ 8.06 UAH
500+ 4.97 UAH
1000+ 3.38 UAH
2SA1037AKT146QROHMSOT-23 03+available 5000 pc(s)
lead time 14-28 days
2SA1037AKT146RRohm SemiconductorDescription: TRANS PNP 50V 0.15A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
available 23808 pc(s)
lead time 21-31 days
15+ 19 UAH
18+ 15.23 UAH
100+ 8.06 UAH
500+ 4.97 UAH
1000+ 3.38 UAH
2SA1037AKT146RROHM SEMICONDUCTORMaterial: 2SA1037AKT146R PNP SMD transistorsout of stock
2SA1037AKT146RROHMSOT23available 1000 pc(s)
lead time 14-28 days
2SA1037AKT146RROHM SemiconductorBipolar Transistors - BJT PNP 50V 0.15Aavailable 23521 pc(s)
lead time 14-21 days
16+ 19.25 UAH
19+ 15.44 UAH
100+ 7.03 UAH
500+ 4.33 UAH
1000+ 2.95 UAH
3000+ 2.57 UAH
9000+ 2.2 UAH
2SA1037AKT146RRohm SemiconductorDescription: TRANS PNP 50V 0.15A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
available 18000 pc(s)
lead time 21-31 days
3000+ 3.47 UAH
6000+ 2.91 UAH
15000+ 2.47 UAH
2SA1037AKT146RROHMSOT23available 30000 pc(s)
lead time 14-28 days
2SA1037AKT146R
Product id: 27962
RohmTransistors > Bipolar PNP
Корпус: SOT-23
fT: 140 MHz
Uке, В: 50 V
Uкб, В: 50 V
Iк, А: 0,15 A
h21,max: 560
2 pcs - RADIOMAG-Lviv
20 pcs - RADIOMAG-Kharkiv
1 pcs - RADIOMAG-Odesa
7 pcs - RADIOMAG-Dnipro
2+ 3.5 UAH
10+ 2.8 UAH
2SA1037AKT146RROHM SEMICONDUCTORMaterial: 2SA1037AKT146R PNP SMD transistorsout of stock
2SA1037AKT146RROHMDescription: ROHM - 2SA1037AKT146R - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 150 mA, 200 mW, SC-59, Oberflächenmontage
Transistormontage: Oberflächenmontage
DC-Stromverstärkung hFE: 120
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 200
Übergangsfrequenz ft: 140
Bauform - Transistor: SC-59
Kollektor-Emitter-Spannung V(br)ceo: 50
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: PNP
DC-Kollektorstrom: 150
Betriebstemperatur, max.: -
SVHC: No SVHC (08-Jul-2021)
available 1935 pc(s)
lead time 21-31 days
40+ 17.88 UAH
49+ 14.43 UAH
100+ 7.32 UAH
500+ 4.48 UAH
1000+ 2.5 UAH
2SA1037AKT146RROHMavailable 99000 pc(s)
lead time 14-28 days
2SA1037AKT146RRohm SemiconductorTrans GP BJT PNP 50V 0.15A 200mW 3-Pin SMD T/Ravailable 70185 pc(s)
lead time 21-31 days
1359+ 7.51 UAH
1364+ 7.49 UAH
1676+ 6.09 UAH
2000+ 5.5 UAH
12000+ 4.51 UAH
24000+ 4.04 UAH
2SA1037AKT146RROHM11+ SOT-23available 193360 pc(s)
lead time 14-28 days
2SA1037AKT146SROHM SemiconductorBipolar Transistors - BJT PNP 50V 0.15Aavailable 14 pc(s)
lead time 14-21 days
12+ 26.13 UAH
14+ 20.92 UAH
100+ 9.66 UAH
500+ 6.4 UAH
1000+ 4.33 UAH
3000+ 3.39 UAH
2SA1037AKT146SROHM00+available 4642 pc(s)
lead time 14-28 days
2SA1037AKT146SRohm SemiconductorDescription: TRANS PNP 50V 0.15A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
available 22 pc(s)
lead time 21-31 days
11+ 25.11 UAH
14+ 19.54 UAH
2SA1037AKT146SRohm SemiconductorDescription: TRANS PNP 50V 0.15A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
out of stock
2SA1037AKT146SROHMSOT-23available 3000 pc(s)
lead time 14-28 days
2SA1037AKT146SSOT23-FSROHMavailable 3000 pc(s)
lead time 14-28 days
2SA1037ALFS T146RROHMSOT23available 1692 pc(s)
lead time 14-28 days
2SA1037ARROHMavailable 300 pc(s)
lead time 14-28 days
2SA1037KROHMavailable 3000 pc(s)
lead time 14-28 days
2SA1037KROHMSOT23/available 5614 pc(s)
lead time 14-28 days
2SA1037KROHMSOT23available 50 pc(s)
lead time 14-28 days
2SA1037K T146EROHM95+ SOT-23available 5800 pc(s)
lead time 14-28 days
2SA1037K T147RROHM00+ SOT-23available 9240 pc(s)
lead time 14-28 days
2SA1037K FRLT146RROHMSOT23available 3000 pc(s)
lead time 14-28 days
2SA1037K HRLT146RROHMSOT23/SOT323available 2406 pc(s)
lead time 14-28 days
2SA1037K QROHMSOT23available 6000 pc(s)
lead time 14-28 days
2SA1037K T146RROHM99+available 3000 pc(s)
lead time 14-28 days
2SA1037K-QROHMSOT23available 21000 pc(s)
lead time 14-28 days
2SA1037K-RROHMSOT-23available 48000 pc(s)
lead time 14-28 days
2SA1037K-RROHMSOT23available 3000 pc(s)
lead time 14-28 days
2SA1037K/FQavailable 3000 pc(s)
lead time 14-28 days
2SA1037K/FSavailable 5000 pc(s)
lead time 14-28 days
2SA1037KFS T146QROHMSOT23available 42000 pc(s)
lead time 14-28 days
2SA1037KKROHMSOT23available 3000 pc(s)
lead time 14-28 days
2SA1037KLNROHMSOT23available 6000 pc(s)
lead time 14-28 days
2SA1037KLNROHMavailable 6000 pc(s)
lead time 14-28 days
2SA1037KLNT146RROHMavailable 3010 pc(s)
lead time 14-28 days
2SA1037KMCT146R/FRROHMavailable 51000 pc(s)
lead time 14-28 days
2SA1037KT146available 2980 pc(s)
lead time 14-28 days
2SA1037KT147RROHM00+available 9240 pc(s)
lead time 14-28 days
2SA1037K\FQROHMSOT-23available 3100 pc(s)
lead time 14-28 days
2SA1037RTavailable 100 pc(s)
lead time 14-28 days
2SA1037RROHM09+available 2018 pc(s)
lead time 14-28 days
2SA1037T146ROHM01+available 6010 pc(s)
lead time 14-28 days
2SA1037T146QROHMSOT23available 6000 pc(s)
lead time 14-28 days
2SA1037T146SROHMSOT23available 6000 pc(s)
lead time 14-28 days
2SA1038available 20000 pc(s)
lead time 14-28 days
2SA1038SROHM SemiconductorROHM Semiconductorout of stock
2SA1038STPROHM SemiconductorROHM Semiconductorout of stock
2SA1038STPRRohm SemiconductorDescription: TRANS GP BJT PNP 120V 0.05A 3-PI
Packaging: Tape & Box (TB)
Package / Case: SC-72 Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Supplier Device Package: SPT
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
out of stock
2SA1038STPRROHM SemiconductorBipolar Transistors - BJT TRANS GP BJT PNP 120V 0.05A 3PINout of stock
2SA1038STPSROHM SemiconductorBipolar Transistors - BJT TRANS GP BJT PNP 120V 0.05A 3PINout of stock
2SA1038STPSRohm SemiconductorDescription: TRANS PNP 120V 0.05A SPT
Packaging: Tape & Reel (TR)
Package / Case: SC-72 Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
out of stock
2SA104NECCANavailable 691 pc(s)
lead time 14-28 days
2SA1040available 1200 pc(s)
lead time 14-28 days
2SA1040TOS03+ TO-3available 2500 pc(s)
lead time 14-28 days
2SA1040FUJITSUavailable 1200 pc(s)
lead time 14-28 days
2SA1041TOS03+ TO-3available 2500 pc(s)
lead time 14-28 days
2SA1042TOS03+ TO-3available 2500 pc(s)
lead time 14-28 days
2SA1043TOS03+ TO-3available 2500 pc(s)
lead time 14-28 days
2SA1044TOS03+ TO-3available 2500 pc(s)
lead time 14-28 days
2SA1045TOS03+ TO-3available 2500 pc(s)
lead time 14-28 days
2SA1046TOS03+ TO-3available 2500 pc(s)
lead time 14-28 days
2SA1046 (KA1046)
Product id: 29977
NECTransistors > Bipolar PNP
Корпус: TO-220F
Uке, В: 100 V
Uкб, В: 100 V
Iк, А: 15 A
Прим: Дарлингтон
2SA1046 (KTA1046); биполярный; PNP; 60V; 3A; 20W; 30Mhz; Корпус: TO-220FP; KEC (Korea)available 95 pc(s)
lead time 2-3 days
36+ 17.8 UAH
2SA1048available 10000 pc(s)
lead time 14-28 days
2SA1048
Product id: 153275
SecosTransistors > Bipolar PNP
Корпус: TO-92S
fT: 80 MHz
Uке, В: 50 V
Uкб, В: 50 V
Iк, А: 0,15 A
h21,max: 400
72 pcs - stock Kyiv
7 pcs - RADIOMAG-Lviv
6 pcs - RADIOMAG-Dnipro
1+ 44 UAH
10+ 39.6 UAH
2SA1048(T4MATT)ToshibaBipolar Transistors - BJT N-MINI PLN(LF),ACTIVE,DISCON(07-10)/PHASE-OUT(09-01)/OBSOLETE(09-04),out of stock
2SA1048-GRToshibaBipolar Transistors - BJT N-MINI PLN(LF),DISCON(07-10)/PHASE-OUT(09-01)/OBSOLETE(09-07),out of stock
2SA1048-GR(F)available 1000 pc(s)
lead time 14-28 days
2SA1048-GR(T4PAIKFToshibaBipolar Transistors - BJT Pb-F N-MINI PLN(LF),ACTIVE,out of stock
2SA1048-GR(T4PAIOKToshibaBipolar Transistors - BJT N-MINI PLN(LF),ACTIVE,DISCON(07-10)/PHASE-OUT(09-01)/OBSOLETE(09-04),out of stock
2SA1048-GR(TPE4)ToshibaBipolar Transistors - BJT N-MINI PLN(LF),DISCON(07-10)/PHASE-OUT(10-04)/OBSOLETE(10-07),out of stock
2SA1048-GR-APMicro Commercial CoDescription: TRANS PNP 50V 0.15A TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
out of stock
2SA1048-GR-APMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1048-GR-BPMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1048-GR-BPMicro Commercial CoDescription: TRANS PNP 50V 0.15A TO92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
out of stock
2SA1048-GR-TPMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1048-YToshibaBipolar Transistors - BJT N-MINI PLN(LF),DISCON(07-10)/PHASE-OUT(10-04)/OBSOLETE(10-07),out of stock
2SA1048-Y(TP4SONY)ToshibaBipolar Transistors - BJT N-MINI PLN(LF),DISCON,DISCON(07-10)/OBSOLETE(09-01),out of stock
2SA1048-Y(TPE4)ToshibaBipolar Transistors - BJT N-MINI PLN(LF),DISCON(07-10)/PHASE-OUT(10-04)/OBSOLETE(10-07),out of stock
2SA1048-Y-APMicro Commercial CoDescription: TRANS PNP 50V 0.15A TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
out of stock
2SA1048-Y-APMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1048-Y-BPMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1048-Y-TPMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1049-GR(TPE4)ToshibaBipolar Transistors - BJT N-MINI PLN(LF),DISCON(07-10)/PHASE-OUT(09-07)/OBSOLETE(10-04),out of stock
2SA1050ATOS03+ TO-3available 2500 pc(s)
lead time 14-28 days
2SA1051TOS03+ TO-3available 2500 pc(s)
lead time 14-28 days
2SA1051ATOS03+ TO-3available 2500 pc(s)
lead time 14-28 days
2SA1052HITACHIavailable 3045 pc(s)
lead time 14-28 days
2SA1052MCHITACHISOT-23available 3000 pc(s)
lead time 14-28 days
2SA1052MC2LHITACHISOT23available 3000 pc(s)
lead time 14-28 days
2SA1052MCTLHITACHI97+ SOT-23available 3000 pc(s)
lead time 14-28 days
2SA1052MCTL SOT23-MCHITACHIavailable 6000 pc(s)
lead time 14-28 days
2SA1052MCTRHITACHISOT23/SOT323available 2625 pc(s)
lead time 14-28 days
2SA1052MCTR-ERenesas Electronics America IncDescription: SMALL SIGNAL BIPOLAR TRANSISTORavailable 27666 pc(s)
lead time 21-31 days
2929+ 6.55 UAH
2SA1052MDTR-ERENESASSOT23/SOT323available 3000 pc(s)
lead time 14-28 days
2SA1052MDTR-ERenesas Electronics America IncDescription: TRANS PNP 30V 0.1A 3MPAKavailable 8501 pc(s)
lead time 21-31 days
2929+ 6.55 UAH
2SA1060NEC00+ TO-3available 5000 pc(s)
lead time 14-28 days
2SA1061NEC00+ TO-3available 5000 pc(s)
lead time 14-28 days
2SA1062NEC00+ TO-3available 5000 pc(s)
lead time 14-28 days
2SA1063A-T111-1RSOT323available 3000 pc(s)
lead time 14-28 days
2SA1067TOS03+ TO-3available 2500 pc(s)
lead time 14-28 days
2SA1068TOS03+ TO-3available 2500 pc(s)
lead time 14-28 days
2SA1069NECPNP 5A 80V 30W 50MHz 2SA1069 T2SA1069
package quantity: 89 pc(s)
available 89 pc(s)
lead time 28-31 days
89+ 21.1 UAH
2SA1069ANEC00+ TO220available 5000 pc(s)
lead time 14-28 days
2SA1069A-Z-E1RenesasTrans GP BJT PNP 80V 5A 1500mW Automotive 3-Pin(3+Tab) TO-220AB T/Rout of stock
2SA1072TOS03+ TO-3available 2500 pc(s)
lead time 14-28 days
2SA1072ATOS03+ TO-3available 2500 pc(s)
lead time 14-28 days
2SA1073TOS03+ TO-3available 2500 pc(s)
lead time 14-28 days
2SA1074TOS03+ TO-3available 2500 pc(s)
lead time 14-28 days
2SA1075available 200 pc(s)
lead time 14-28 days
2SA1075
Product id: 140381
SavanticTransistors > Bipolar PNP
Корпус: MT-200
Uке, В: 120 V
Uкб, В: 120 V
Iк, А: 12 A
7 pcs - RADIOMAG-Dnipro
1+ 39 UAH
2SA1079TOS00+ TO220available 5000 pc(s)
lead time 14-28 days
2SA1083-D-APMicro Commercial CoDescription: TRANS PNP 60V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 12V
Frequency - Transition: 90MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
out of stock
2SA1083-D-APMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1083-D-BPMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1083-D-TPMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1083-E-APMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1083-E-APMicro Commercial CoDescription: TRANS PNP 60V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 12V
Frequency - Transition: 90MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
out of stock
2SA1083-E-BPMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1083-E-TPMicro Commercial Components (MCC)Bipolar Transistors - BJTout of stock
2SA1084ETZRenesas Electronics AmericaDescription: TRANS PNP 90V 0.1A TO-92out of stock
2SA1084ETZ-ERenesasTrans GP BJT PNP 90V 0.1A 3-Pin TO-92 Tape and Boxout of stock
2SA1084ETZ-ERenesas Electronics AmericaDescription: TRANS PNP 90V 0.1A TO-92out of stock
2SA1085
Product id: 87213
Transistors > Bipolar PNP
2SA1085EHITACHIavailable 2100 pc(s)
lead time 14-28 days
2SA1085Eavailable 2100 pc(s)
lead time 14-28 days
2SA1090TO-39available 587 pc(s)
lead time 14-28 days
2SA1091TOSHIBATO-92available 85000 pc(s)
lead time 14-28 days
2SA1091-0?T2SONY,F?TOSHIBATO92available 2441 pc(s)
lead time 14-28 days
2SA1091-OToshibaavailable 934 pc(s)
lead time 14-28 days
2SA1091-O(TPE2)ToshibaBipolar Transistors - BJT TO-92 PLN(LF),DISCON(07-10)/PHASE-OUT(09-07)/OBSOLETE(09-10),out of stock
2SA1091-O(TPE2,F)ToshibaBipolar Transistors - BJT Pb-F TO-92 PLN(LF),ACTIVE,out of stock
2SA1091-R(TPE2,F)Toshiba Semiconductor and StorageDescription: TRANS PNP 300V 0.1A TO-92out of stock
2SA1091-R(TPE2,F)ToshibaBipolar Transistors - BJT Bipolar Small Signal Transistorsout of stock
2SA1093TOS00+ TO-3available 5000 pc(s)
lead time 14-28 days
2SA1094TOS00+available 5000 pc(s)
lead time 14-28 days
2SA1094available 2100 pc(s)
lead time 14-28 days
2SA1094TOSHIBAavailable 2100 pc(s)
lead time 14-28 days
2SA1095TOS00+available 5000 pc(s)
lead time 14-28 days
2SA1095available 2100 pc(s)
lead time 14-28 days
2SA1095TOSHIBAavailable 2100 pc(s)
lead time 14-28 days
2SA1096SANKEN00+ TO126available 5000 pc(s)
lead time 14-28 days
2SA10960QPanasonic Electronic ComponentsDescription: TRANS PNP 50V 2A TO-126out of stock
2SA10960RPanasonic Electronic ComponentsDescription: TRANS PNP 50V 2A TO-126out of stock
2SA1096AQPanasonic Electronic ComponentsDescription: TRANS PNP 60V 2A TO-126out of stock
2SA110TO-39available 590 pc(s)
lead time 14-28 days
2SA1102
Product id: 160964
SankenTransistors > Bipolar PNP
Корпус: TO-3PN
fT: 20 MHz
Uке, В: 80 V
Uкб, В: 80 V
Iк, А: 6 A
h21,max: 50
5 pcs - stock Kyiv
1+ 27.5 UAH
2SA1104
Product id: 160967
SankenTransistors > Bipolar PNP
Корпус: TO-3PN
Uке, В: 120 V
Uкб, В: 120 V
Iк, А: 8 A
h21,max: 180
9 pcs - stock Kyiv
1+ 36 UAH
2SA1105SK2002 TO-3PHavailable 5000 pc(s)
lead time 14-28 days
2SA1106SK2002 TO-3PHavailable 5000 pc(s)
lead time 14-28 days
2SA1109TOS03+ TO-3available 2500 pc(s)
lead time 14-28 days
2SA111TO-39available 719 pc(s)
lead time 14-28 days
2SA11100QPanasonicPanasonicout of stock
2SA11100QPanasonic Electronic ComponentsDescription: TRANS PNP 120V 0.5A TO126B-A1out of stock
2SA1115available 20000 pc(s)
lead time 14-28 days
2SA1116TOS03+ TO-3available 2500 pc(s)
lead time 14-28 days
2SA1117TOS03+ TO-3available 2500 pc(s)
lead time 14-28 days
2SA112TO-39available 697 pc(s)
lead time 14-28 days
2SA1120TOS00+ Z-8HIAavailable 5000 pc(s)
lead time 14-28 days
2SA1121available 3000 pc(s)
lead time 14-28 days
2SA1121CTLHITACHISOT23-SCavailable 2346 pc(s)
lead time 14-28 days
2SA1121CTL SOT23-SCHITACHIavailable 2346 pc(s)
lead time 14-28 days
2SA1121SCTLHITACHIN/A SOT-23available 1800 pc(s)
lead time 14-28 days
2SA1121SCTL-ERENESASSOT23/SOT323available 2183 pc(s)
lead time 14-28 days
2SA1121SCTLSOT23-SCHITACHIavailable 2346 pc(s)
lead time 14-28 days
2SA1121SCTRHITSOT23available 6000 pc(s)
lead time 14-28 days
2SA1122available 6300 pc(s)
lead time 14-28 days
2SA1122CCHITACHISOT23available 2108 pc(s)
lead time 14-28 days
2SA1122CCTL-ERenesas Electronics America IncDescription: SMALL SIGNAL BIPOLAR TRANS PNP
Packaging: Bulk
Part Status: Active
available 75000 pc(s)
lead time 21-31 days
2929+ 6.79 UAH
2SA1122CCTR-ERenesas Electronics America IncDescription: SMALL SIGNAL BIPOLAR TRANS PNP
Packaging: Bulk
Part Status: Active
available 48000 pc(s)
lead time 21-31 days
2929+ 6.79 UAH
2SA1122CDHITACHIavailable 3000 pc(s)
lead time 14-28 days
2SA1122CDTL-ERenesas Electronics America IncDescription: SMALL SIGNAL BIPOLAR TRANS PNP
Packaging: Bulk
Part Status: Active
available 66000 pc(s)
lead time 21-31 days
1603+ 12.89 UAH
2SA1122CDTR-ERenesas Electronics America IncDescription: SMALL SIGNAL BIPOLAR TRANS PNP
Packaging: Bulk
Part Status: Active
available 18000 pc(s)
lead time 21-31 days
2929+ 6.79 UAH
2SA1123
Product id: 153274
PanasonicTransistors > Bipolar PNP
Корпус: TO-92B
fT: 200 MHz
Uке, В: 150 V
Uкб, В: 150 V
Iк, А: 0,05 A
h21,max: 450
8 pcs - RADIOMAG-Lviv
1+ 14 UAH
2SA11230RAPanasonic Electronic ComponentsDescription: TRANS PNP 150V 0.05A TO92-B1
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 10mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 750 mW
out of stock
2SA11230RAPanasonic Electronic ComponentsDescription: TRANS PNP 150V 0.05A TO92-B1
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 10mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 750 mW
out of stock
2SA1124KESENES09+available 200018 pc(s)
lead time 14-28 days
2SA1124available 200000 pc(s)
lead time 14-28 days
2SA11240RPanasonic Electronic ComponentsDescription: TRANS PNP 150V 0.05A TO92L-A1
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92L-A1
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
out of stock
2SA11240RPanasonicPanasonicout of stock
2SA1126TO-39available 655 pc(s)
lead time 14-28 days
2SA11270RAPanasonic Electronic ComponentsDescription: TRANS PNP 55V 0.1A TO92-B1
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 55 V
Power - Max: 400 mW
out of stock
2SA11270RAPanasonic Electronic ComponentsDescription: TRANS PNP 55V 0.1A TO92-B1
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 55 V
Power - Max: 400 mW
out of stock
2SA1129available 1000 pc(s)
lead time 14-28 days
2SA113TO-39available 587 pc(s)
lead time 14-28 days
2SA1133
Product id: 58042
Transistors > Bipolar PNP
2SA1133NEC00+ TO220ABavailable 5000 pc(s)
lead time 14-28 days
2SA1133-Pavailable 2370 pc(s)
lead time 14-28 days
2SA1142-Y
Product id: 169296
Transistors > Bipolar PNP
2SA1145-O
Product id: 112787
ToshibaTransistors > Bipolar PNP
Корпус: TO-92MOD
fT: 200 MHz
Uке, В: 150 V
Uкб, В: 150 V
Iк, А: 0,05 A
2SA1145-O (TE6,F,M)ROHM SemiconductorBipolar Transistors - BJTout of stock
2SA1145-O (TPE6,F)ToshibaBipolar Transistors - BJTout of stock
2SA1145-O(T6HMN,F)ToshibaBipolar Transistors - BJT Pb-F PLS-PW,PRE-ACTIVE,out of stock
2SA1145-O(T6HMN,FMToshibaBipolar Transistors - BJT Pb-F LSTM PLSPW PLN-N,ACTIVE,out of stock
2SA1145-O(TE6,C,M)ToshibaBipolar Transistors - BJT LSTM PLSPW PLN-N,ACTIVE,DISCON(07-10)/PHASE-OUT(09-01)/OBSOLETE(09-04),out of stock
2SA1145-O(TE6,F,M)ToshibaBipolar Transistors - BJT Transistor PNP 150V 0.05Aout of stock
2SA1145-O(TPE6,C)ToshibaBipolar Transistors - BJT LSTM PLSPW PLN-N,DISCON(07-10)/PHASE-OUT(10-04)/OBSOLETE(10-07),out of stock
2SA1145-O(TPE6,F)ToshibaBipolar Transistors - BJT Transistor PNP, -140V, -0.05A, TO-92MODout of stock
2SA1145-O(TPE6F)ToshibaBipolar Transistors - BJTout of stock
2SA1145-O,T6F(JToshibaBipolar Transistors - BJTout of stock
2SA1145-O,T6F(MToshibaBipolar Transistors - BJTout of stock
2SA1145-OTPE6CToshibaBipolar Transistors - BJT LSTM PLSPW PLN-N,DISCON(07-10)/PHASE-OUT(10-04)/OBSOLETE(10-07),out of stock
2SA1145-Y
Product id: 112786
Transistors > Bipolar PNP
Корпус: TO-92MOD
fT: 200 MHz
Uке, В: 150 V
Uкб, В: 150 V
Iк, А: 0,05 A
12 pcs - RADIOMAG-Kharkiv
68 pcs - RADIOMAG-Odesa
1+ 13.5 UAH
2SA1145-Y(ROHS)TOSHIBAavailable 37700 pc(s)
lead time 14-28 days
2SA1145-Y(ROHS)available 37700 pc(s)
lead time 14-28 days
2SA1145-Y(TPE6,C)ToshibaBipolar Transistors - BJT LSTM PLSPW PLN-N,ACTIVE,DISCON(07-10)/PHASE-OUT(09-01)/OBSOLETE(09-04),out of stock
2SA1145-Y,T6F(JToshibaBipolar Transistors - BJTout of stock
2SA115TO-39available 590 pc(s)
lead time 14-28 days
2SA1150-O(T4PAIO-KToshibaBipolar Transistors - BJT N-MINI PLN(LF),ACTIVE,DISCON(07-10)/PHASE-OUT(09-01)/OBSOLETE(09-04),out of stock
2SA1150-Y(TPE4)ToshibaBipolar Transistors - BJT N-MINI PLN(LF),ACTIVE,DISCON(07-10)/PHASE-OUT(09-01)/OBSOLETE(09-04),out of stock
2SA1152available 3000 pc(s)
lead time 14-28 days
2SA1152-ARenesas Electronics America IncDescription: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
available 29745 pc(s)
lead time 21-31 days
926+ 21.72 UAH
2SA1156NECPNP 0.5A 400V 10W 2SA1156 T2SA1156
package quantity: 25 pc(s)
available 6 pc(s)
lead time 28-31 days
25+ 18.91 UAH
2SA1156NECPNP 0.5A 400V 10W 2SA1156 T2SA1156
package quantity: 25 pc(s)
available 50 pc(s)
lead time 28-31 days
50+ 18.91 UAH
2SA1156-AZRenesas Electronics America IncDescription: SMALL SIGNAL BIPOLAR TRANS PNP
Packaging: Bulk
Part Status: Active
out of stock
2SA1156-AZRenesas ElectronicsRenesas Electronicsout of stock
2SA1156-M(KM)available 9850 pc(s)
lead time 14-28 days
2SA1156-Y
Product id: 112789
NECTransistors > Bipolar PNP
Корпус: TO-126
Uке, В: 400 V
Uкб, В: 400 V
Iк, А: 0,5 A
9 pcs - stock Kyiv
1+ 20 UAH
10+ 17.9 UAH
2SA116TO-39available 719 pc(s)
lead time 14-28 days
2SA1160
Product id: 184995
Transistors > Bipolar PNP
Корпус: TO-92MOD
fT: 140 MHz
Uке, В: 10 V
Uкб, В: 20 V
Iк, А: 2 A
h21,max: 120
8 pcs - stock Kyiv
1+ 11 UAH
2SA1160-B (TE6,F,M)Diodes IncorporatedBipolar Transistors - BJTout of stock
2SA1160-B (TE6,F,M)ToshibaBipolar Transistors - BJTout of stock
2SA1160-B(TE6,C,M)ToshibaBipolar Transistors - BJT LSTM PLSPW PLN-N,ACTIVE,DISCON(07-10)/PHASE-OUT(09-01)/OBSOLETE(09-04),out of stock
2SA1160-B(TE6,F,M)ToshibaBipolar Transistors - BJT PNP 10V 2A Transistorout of stock
2SA1160-B(TE6FM)ToshibaBipolar Transistors - BJTout of stock
2SA1162
Product id: 27587
ToshibaTransistors > Bipolar PNP
Корпус: SOT-23
fT: 80 MHz
Uке, В: 50 V
Uкб, В: 50 V
Iк, А: 0,15 A
h21,max: 400
1 pcs - RADIOMAG-Kharkiv
1+ 7 UAH
10+ 5.2 UAH
2SA1162ToshibaToshibaout of stock
2SA1162-GATOSHIBAavailable 3000 pc(s)
lead time 14-28 days
2SA1162-GRToshibaBipolar Transistors - BJTout of stock
2SA1162-GRTOSHIBASOT23available 32428 pc(s)
lead time 14-28 days
2SA1162-GRavailable 3900 pc(s)
lead time 14-28 days
2SA1162-GRTOSHIBAS-MINIavailable 36000 pc(s)
lead time 14-28 days
2SA1162-GRTOSHIBAavailable 2816 pc(s)
lead time 14-28 days
2SA1162-GR(T5L,F,T)ToshibaTrans GP BJT PNP 50V 0.15A 150mW Automotive 3-Pin S-Mini T/Rout of stock
2SA1162-GR(T5L,F,T)TOSHIBA0750+available 2000 pc(s)
lead time 14-28 days
2SA1162-GR(TE85L,FTOSHIBAMaterial: 2SA1162-GR PNP SMD transistorsout of stock
2SA1162-GR(TE85L,FToshibaTrans GP BJT PNP 50V 0.15A 150mW Automotive 3-Pin S-Mini T/Rout of stock
2SA1162-GR(TE85L,FTOSHIBAMaterial: 2SA1162-GR PNP SMD transistorsout of stock
2SA1162-GR,LFToshiba Semiconductor and StorageDescription: TRANS PNP 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
available 63000 pc(s)
lead time 21-31 days
3000+ 2.14 UAH
6000+ 1.86 UAH
15000+ 1.62 UAH
30000+ 1.36 UAH
2SA1162-GR,LFToshibaTrans GP BJT PNP 50V 0.15A 200mW Automotive 3-Pin S-Mini T/Rout of stock
2SA1162-GR,LFToshibaTrans GP BJT PNP 50V 0.15A 200mW 3-Pin S-Mini T/Ravailable 3000 pc(s)
lead time 21-31 days
3000+ 1.99 UAH
2SA1162-GR,LFToshibaTrans GP BJT PNP 50V 0.15A 200mW 3-Pin S-Mini T/Ravailable 3000 pc(s)
lead time 21-31 days
2SA1162-GR,LFToshiba Semiconductor and StorageDescription: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
available 63587 pc(s)
lead time 21-31 days
23+ 12.22 UAH
25+ 10.59 UAH
100+ 5.78 UAH
500+ 3.34 UAH
1000+ 2.27 UAH
2SA1162-GR,LFToshibaBipolar Transistors - BJT PNP Transistor -50V S-Mini -0.15A -0.3Vavailable 190668 pc(s)
lead time 14-21 days
24+ 12.37 UAH
26+ 11.4 UAH
100+ 5.4 UAH
500+ 3.32 UAH
1000+ 2.32 UAH
3000+ 1.69 UAH
9000+ 1.51 UAH
2SA1162-GR,LFToshibaTrans GP BJT PNP 50V 0.15A 200mW 3-Pin S-Mini T/Rout of stock
2SA1162-GR,LF(BToshibaTrans GP BJT PNP 50V 0.15A 150mW Automotive 3-Pin S-Mini T/Ravailable 2840 pc(s)
lead time 21-31 days
2505+ 4.08 UAH
2578+ 3.96 UAH
2SA1162-GR,LF(TToshibaTrans GP BJT PNP 50V 0.15A 150mW Automotive 3-Pin S-Mini T/Ravailable 9200 pc(s)
lead time 21-31 days
3326+ 3.07 UAH
3334+ 3.06 UAH
3887+ 2.63 UAH
4099+ 2.4 UAH
6000+ 2.08 UAH
2SA1162-GR,LXHFToshiba Semiconductor and StorageDescription: TRANS PNP 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
out of stock
2SA1162-GR,LXHFToshibaBipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-346 (S-Mini)available 14042 pc(s)
lead time 14-21 days
11+ 26.86 UAH
15+ 20.13 UAH
100+ 9.91 UAH
500+ 6.59 UAH
1000+ 5.08 UAH
3000+ 3.89 UAH
9000+ 3.45 UAH
2SA1162-GR,LXHFToshibaTrans GP BJT PNP 50V 0.15A 150mW T/Rout of stock
2SA1162-GR,LXHFToshiba Semiconductor and StorageDescription: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
available 454 pc(s)
lead time 21-31 days
11+ 26.47 UAH
14+ 18.82 UAH
100+ 10.67 UAH
2SA1162-GR-TPMicro Commercial CoDescription: TRANSISTOR PNP SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
out of stock
2SA1162-GR-TPMicro Commercial Components (MCC)Bipolar Transistors - BJT PNP Plastic-Encapsulate Transistorsout of stock
2SA1162-GR-TPMicro Commercial ComponentsTrans GP BJT PNP 50V 0.15A 150mW 3-Pin SOT-23 T/Rout of stock
2SA1162-GRTE85LFToshibaTrans GP BJT PNP 50V 0.15A 150mW Automotive 3-Pin S-Mini T/Rout of stock
2SA1162-O(TE85L,F)ToshibaBipolar Transistors - BJT PNP Transistor -50V S-Mini -0.15A -0.3Vavailable 1714 pc(s)
lead time 14-21 days
2SA1162-O,LFToshiba Semiconductor and StorageDescription: TRANS PNP 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
out of stock
2SA1162-O,LFToshibaBipolar Transistors - BJT Bias Resistor Built-in transistoravailable 19868 pc(s)
lead time 14-21 days
25+ 11.71 UAH
26+ 11.4 UAH
100+ 7.15 UAH
500+ 4.45 UAH
1000+ 3.07 UAH
3000+ 1.88 UAH
9000+ 1.51 UAH
2SA1162-O,LFToshibaTrans GP BJT PNP 50V 0.15A 200mW 3-Pin S-Mini T/Rout of stock
2SA1162-O,LFToshiba Semiconductor and StorageDescription: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
available 2630 pc(s)
lead time 21-31 days
24+ 11.54 UAH
2SA1162-O,LXHFToshibaTrans GP BJT PNP 50V 0.15A 150mW T/Rout of stock
2SA1162-O,LXHFToshiba Semiconductor and StorageDescription: TRANS PNP 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
available 5975 pc(s)
lead time 21-31 days
3000+ 4.89 UAH
2SA1162-O,LXHFToshibaBipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:70-140 SOT-346 (S-Mini)available 6000 pc(s)
lead time 14-21 days
11+ 26.86 UAH
15+ 20.13 UAH
100+ 9.91 UAH
500+ 6.59 UAH
1000+ 5.08 UAH
3000+ 3.89 UAH
2SA1162-O,LXHFToshiba Semiconductor and StorageDescription: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
available 5975 pc(s)
lead time 21-31 days
11+ 26.47 UAH
14+ 18.82 UAH
100+ 10.67 UAH
500+ 6.63 UAH
1000+ 5.09 UAH
2SA1162-O-APMicro Commercial CoDescription: TRANS PNP 50V 0.15A SOT23
Packaging: Tape & Box (TB)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
out of stock
2SA1162-YTOSHIBASOT23-SYavailable 12000 pc(s)
lead time 14-28 days
2SA1162-YTOSHSOT25/available 17948 pc(s)
lead time 14-28 days
2SA1162-YToshibaBipolar Transistors - BJTout of stock
2SA1162-YTOSHIBA10+ROHS SOT-23available 150929 pc(s)
lead time 14-28 days
2SA1162-YTOSHIBASOT23available 107750 pc(s)
lead time 14-28 days
2SA1162-YTOSHSOT23available 20481 pc(s)
lead time 14-28 days
2SA1162-YTOSHIBASOT23/SOT323available 13392 pc(s)
lead time 14-28 days
2SA1162-YTOSHIBA06+ SOT-23available 9000 pc(s)
lead time 14-28 days
2SA1162-YTOSHIBAN/A 04+available 5000 pc(s)
lead time 14-28 days
2SA1162-Y(T5L,F,T)ToshibaTrans GP BJT PNP 50V 0.15A 150mW Automotive 3-Pin S-Mini T/Rout of stock
2SA1162-Y(T5LCANOF)TOSHIBASOT23/SOT323available 5146 pc(s)
lead time 14-28 days
2SA1162-Y(T5LND,F)TOSHIBASOT23/SOT323available 1852 pc(s)
lead time 14-28 days
2SA1162-Y(T5RTORKF)TOSHIBASOT23/SOT323available 2527 pc(s)
lead time 14-28 days
2SA1162-Y(TE85L)TOSHIBASOT23/SOT323available 2653 pc(s)
lead time 14-28 days
2SA1162-Y(TE85L)ToshibaTrans GP BJT PNP 50V 0.15A 150mW Automotive 3-Pin S-Mini T/Rout of stock
2SA1162-Y(TE85L,F)TOSHIBASOT23available 2742 pc(s)
lead time 14-28 days
2SA1162-Y(TE85L,F)TOSHIBA1221+available 3000 pc(s)
lead time 14-28 days
2SA1162-Y(TE85L,F)ToshibaTrans GP BJT PNP 50V 0.15A 150mW Automotive 3-Pin S-Mini T/Rout of stock
2SA1162-Y(TE85LЈ©TOSHIBATOSHIBAavailable 5788 pc(s)
lead time 14-28 days
2SA1162-Y(TE85R,F)ToshibaTrans GP BJT PNP 50V 0.15A 150mW Automotive 3-Pin S-Mini T/Rout of stock
2SA1162-Y(TLSPF,T)ToshibaBipolar Transistors - BJT SM SIG POWER TRANSout of stock
2SA1162-Y,LFToshibaBipolar Transistors - BJT PNP Transistor -50V S-Mini -0.15A -0.3Vavailable 22432 pc(s)
lead time 14-21 days
24+ 12.37 UAH
26+ 11.33 UAH
100+ 5.4 UAH
500+ 3.32 UAH
1000+ 2.32 UAH
3000+ 1.88 UAH
9000+ 1.63 UAH
2SA1162-Y,LFToshiba Semiconductor and StorageDescription: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
out of stock
2SA1162-Y,LFToshibaTrans GP BJT PNP 50V 0.15A 200mW 3-Pin S-Mini T/Rout of stock
2SA1162-Y,LFToshibaTrans GP BJT PNP 50V 0.15A 150mW Automotive 3-Pin S-Mini T/Rout of stock
2SA1162-Y,LFToshiba Semiconductor and StorageDescription: TRANS PNP 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
out of stock
2SA1162-Y,LF(BToshibaTrans GP BJT PNP 50V 0.15A 200mW Automotive 3-Pin S-Mini T/Ravailable 5440 pc(s)
lead time 21-31 days
2505+ 4.08 UAH
2578+ 3.96 UAH
5000+ 3.85 UAH
2SA1162-Y,LF(TToshibaTrans GP BJT PNP 50V 0.15A 200mW Automotive 3-Pin S-Mini T/Rout of stock
2SA1162-Y,LF(TToshibaTrans GP BJT PNP 50V 0.15A 200mW Automotive 3-Pin S-Mini T/Ravailable 24980 pc(s)
lead time 21-31 days
3326+ 3.07 UAH
3334+ 3.06 UAH
3887+ 2.63 UAH
4099+ 2.4 UAH
6000+ 2.08 UAH
24000+ 1.87 UAH
2SA1162-Y,LXHFToshibaBipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-346 (S-Mini)available 8895 pc(s)
lead time 14-21 days
11+ 26.86 UAH
15+ 20.13 UAH
100+ 9.91 UAH
500+ 6.59 UAH
1000+ 5.08 UAH
3000+ 3.89 UAH
9000+ 3.45 UAH
2SA1162-Y,LXHFToshiba Semiconductor and StorageDescription: TRANS PNP 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
available 3000 pc(s)
lead time 21-31 days
3000+ 4.89 UAH
2SA1162-Y,LXHFToshibaTrans GP BJT PNP 50V 0.15A 150mW T/Rout of stock
2SA1162-Y,LXHFToshiba Semiconductor and StorageDescription: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
available 5923 pc(s)
lead time 21-31 days
11+ 26.47 UAH
14+ 18.82 UAH
100+ 10.67 UAH
500+ 6.63 UAH
1000+ 5.09 UAH
2SA1162-Y-TPMicro Commercial CoDescription: TRANSISTOR PNP SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
out of stock
2SA1162-Y-TPMicro Commercial Components (MCC)Bipolar Transistors - BJT PNP Plastic-Encapsulate Transistorsout of stock
2SA1162-YTE85LFToshibaTrans GP BJT PNP 50V 0.15A 150mW Automotive 3-Pin S-Mini T/Rout of stock
2SA1162GRavailable 96000 pc(s)
lead time 14-28 days
2SA1162GRTOSHIBA07+ SOT-23available 88000 pc(s)
lead time 14-28 days
2SA1162GRNEC10+available 3000 pc(s)
lead time 14-28 days
2SA1162GT1onsemiDescription: TRANS PNP 50V 0.15A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-59
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
available 137980 pc(s)
lead time 21-31 days
15000+ 1.36 UAH
2SA1162GT1onsemiDescription: TRANS PNP 50V 0.15A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-59
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
out of stock
2SA1162S-GR,LFToshibaBipolar Transistors - BJT SM Sig PNP Trans VCEO -50V IC -150mAavailable 231 pc(s)
lead time 14-21 days
2SA1162S-GR,LF(DToshiba Semiconductor and StorageDescription: TRANS PNP 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
out of stock
2SA1162S-Y, LF(DToshiba Semiconductor and StorageDescription: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
out of stock
2SA1162S-Y, LF(DToshiba Semiconductor and StorageDescription: TRANS PNP 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
out of stock
2SA1162S-Y,LFToshiba Semiconductor and StorageDescription: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
out of stock
2SA1162S-Y,LFToshiba Semiconductor and StorageDescription: TRANS PNP 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
out of stock
2SA1162YN/A09+available 12018 pc(s)
lead time 14-28 days
2SA1162YTOSHIBASOT23/SOT323available 2143 pc(s)
lead time 14-28 days
2SA1162YSOT-23available 100 pc(s)
lead time 14-28 days
2SA1162Y(SY)TOSHIBAavailable 35370 pc(s)
lead time 14-28 days
2SA1162YT1onsemiDescription: TRANS PNP 50V 0.15A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-59
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
out of stock
2SA1162YT1onsemiDescription: TRANS PNP 50V 0.15A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-59
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
available 130820 pc(s)
lead time 21-31 days
15000+ 1.36 UAH
2SA1163TOSHIBASOT-23available 33000 pc(s)
lead time 14-28 days
2SA1163ToshibaToshibaout of stock
2SA1163-BLTOSHIBASOT-23available 6000 pc(s)
lead time 14-28 days
2SA1163-BL(5LGH,FTToshibaBipolar Transistors - BJTout of stock
2SA1163-BL(TE85L,FToshibaBipolar Transistors - BJT PNP Trans -0.1A LN -120V VCEOavailable 379 pc(s)
lead time 14-21 days
2SA1163-BL(TE85L,FToshibaTrans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/Rout of stock
2SA1163-BL(TE85R)TOSHIBASOT23/SOT323available 1596 pc(s)
lead time 14-28 days
2SA1163-BL,LFToshibaTrans GP BJT PNP 120V 0.1A 150mW Automotive 3-Pin S-Mini T/Rout of stock
2SA1163-BL,LFToshiba Semiconductor and StorageDescription: TRANS PNP 120V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
out of stock
2SA1163-BL,LFToshibaBipolar Transistors - BJT Transistor for Low Freq. Amplificationavailable 171907 pc(s)
lead time 14-21 days
13+ 23.42 UAH
16+ 18.61 UAH
100+ 8.53 UAH
500+ 5.65 UAH
1000+ 3.83 UAH
3000+ 2.95 UAH
9000+ 2.51 UAH
2SA1163-BL,LFToshibaTrans GP BJT PNP 120V 0.1A 150mW Automotive 3-Pin S-Mini T/Rout of stock
2SA1163-BL,LFToshibaTrans GP BJT PNP 120V 0.1A 150mW 3-Pin S-Mini T/Rout of stock
2SA1163-BL,LFToshiba Semiconductor and StorageDescription: TRANS PNP 120V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
out of stock
2SA1163-BL,LF(TToshibaTrans GP BJT PNP 120V 0.1A 150mW 3-Pin S-Mini T/Rout of stock
2SA1163-BL,LF(TToshibaTrans GP BJT PNP 120V 0.1A 150mW 3-Pin S-Mini T/Ravailable 1055 pc(s)
lead time 21-31 days
2SA1163-GRTOSHIBAN/A SOT-23available 1537 pc(s)
lead time 14-28 days
2SA1163-GR(T5L,F,TToshibaTrans GP BJT PNP 120V 0.1A 150mW 3-Pin S-Mini T/Rout of stock
2SA1163-GR(TE85L,FToshibaTrans GP BJT PNP 120V 0.1A 150mW 3-Pin S-Mini T/Rout of stock
2SA1163-GR,LFToshibaTrans GP BJT PNP 120V 0.1A 150mW Automotive 3-Pin S-Mini T/Rout of stock
2SA1163-GR,LFToshiba Semiconductor and StorageDescription: TRANS PNP 120V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
available 16965 pc(s)
lead time 21-31 days
14+ 20.36 UAH
17+ 15.95 UAH
100+ 8.44 UAH
500+ 5.21 UAH
1000+ 3.54 UAH
2SA1163-GR,LFToshibaTrans GP BJT PNP 120V 0.1A 150mW 3-Pin S-Mini T/Rout of stock
2SA1163-GR,LFToshibaBipolar Transistors - BJT 120V 100MA PNP TRANSISTORavailable 14969 pc(s)
lead time 14-21 days
14+ 21.3 UAH
17+ 17.03 UAH
100+ 7.84 UAH
500+ 5.21 UAH
1000+ 3.51 UAH
3000+ 2.7 UAH
9000+ 2.32 UAH
2SA1163-GR,LFToshibaTrans GP BJT PNP 120V 0.1A 150mW Automotive 3-Pin S-Mini T/Rout of stock
2SA1163-GR,LFToshiba Semiconductor and StorageDescription: TRANS PNP 120V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
available 15000 pc(s)
lead time 21-31 days
3000+ 3.54 UAH
6000+ 2.96 UAH
15000+ 2.52 UAH
2SA1163-GR,LFToshibaTrans GP BJT PNP 120V 0.1A 150mW Automotive 3-Pin S-Mini T/Ravailable 5 pc(s)
lead time 21-31 days
2SA1163-GR,LF(BToshibaTrans GP BJT PNP 120V 0.1A 150mW 3-Pin S-Mini T/Ravailable 3000 pc(s)
lead time 21-31 days
1684+ 6.06 UAH
1741+ 5.87 UAH
2500+ 5.7 UAH
2SA1163-GR,LF(TToshibaTrans GP BJT PNP 120V 0.1A 150mW 3-Pin S-Mini T/Ravailable 3000 pc(s)
lead time 21-31 days
1177+ 8.68 UAH
2SA1163-GRTE85LFToshibaTrans GP BJT PNP 120V 0.1A 150mW 3-Pin S-Mini T/Rout of stock
2SA1163-GRTE85LFToshibaBipolar Transistors - BJT VCEO -120V Audio IC -100mA IB 10dBout of stock
2SA11630BLTOSHIBASOT23available 1574 pc(s)
lead time 14-28 days
2SA117TO-39available 697 pc(s)
lead time 14-28 days
2SA1171PEPHILIPS02+available 2810 pc(s)
lead time 14-28 days
2SA1171PETRavailable 3000 pc(s)
lead time 14-28 days
2SA1173NECavailable 7000 pc(s)
lead time 14-28 days
2SA1173-T1NECSOT-89available 10000 pc(s)
lead time 14-28 days
2SA1173-T2KEC09+available 6018 pc(s)
lead time 14-28 days
2SA1173-T2/PLNECavailable 3800 pc(s)
lead time 14-28 days
2SA1174NECavailable 1200 pc(s)
lead time 14-28 days
2SA1174available 2080 pc(s)
lead time 14-28 days
2SA1174 TLROHMavailable 280 pc(s)
lead time 14-28 days
2SA1174TLROHMavailable 280 pc(s)
lead time 14-28 days
2SA1175 (F94M)
Product id: 185050
Transistors > Bipolar PNP
Корпус: TO-92
fT: 180 MHZ
Uке, В: 50 V
Uкб, В: 60 V
Iк, А: 0,1 A
30 pcs - stock Kyiv
1+ 20 UAH
10+ 17.9 UAH
2SA1175-ARenesas ElectronicsRenesas Electronicsout of stock
2SA1175-T-ARenesas ElectronicsRenesas Electronicsout of stock
2SA1178SK00+ TO126available 5000 pc(s)
lead time 14-28 days
2SA1178M5-TBavailable 6000 pc(s)
lead time 14-28 days
2SA117907+ SOT-23available 3000 pc(s)
lead time 14-28 days
2SA1179SANYOavailable 3000 pc(s)
lead time 14-28 days
2SA1179NECSOT23available 2403 pc(s)
lead time 14-28 days
2SA1179-6-TB-ESanyoDescription: PNP SILICON TRANSISTOR
Packaging: Bulk
Part Status: Active
available 30000 pc(s)
lead time 21-31 days
5770+ 3.39 UAH
2SA1179-7-TBavailable 2985 pc(s)
lead time 14-28 days
2SA1179-M5-TBSANYOSOT-23 92+available 3000 pc(s)
lead time 14-28 days
2SA1179-M6SOT223-3available 411 pc(s)
lead time 14-28 days
2SA1179/M6SANYOSOT-23available 24000 pc(s)
lead time 14-28 days
2SA1179M5SANYOSOT-23available 600 pc(s)
lead time 14-28 days
2SA1179M5-TBSANYON/A SOT-23available 2750 pc(s)
lead time 14-28 days
2SA1179M6-TASANYOSOT23-M6available 2460 pc(s)
lead time 14-28 days
2SA1179M6-TAavailable 14910 pc(s)
lead time 14-28 days
2SA1179M6-TA SOT23-M6SANYOavailable 2460 pc(s)
lead time 14-28 days
2SA1179M6-TASOT23-M6SANYOavailable 2400 pc(s)
lead time 14-28 days
2SA1179M6-TBSANYON/A SOT-23available 1630 pc(s)
lead time 14-28 days
2SA1179M6\M6SANYOSOT-23available 11200 pc(s)
lead time 14-28 days
2SA1179M7-TBSANYOavailable 99000 pc(s)
lead time 14-28 days
2SA1179M7-TBSANYO09+available 102018 pc(s)
lead time 14-28 days
2SA1179N6-CPASANYO07+ SOT-23available 2000 pc(s)
lead time 14-28 days
2SA1179N6-CPA-TBSONYOSOT23available 1021 pc(s)
lead time 14-28 days
2SA1179N6-CPA-TB2002available 3000 pc(s)
lead time 14-28 days
2SA1179N6-CPA-TBavailable 45000 pc(s)
lead time 14-28 days
2SA1179N6-CPA-TB-EonsemiDescription: TRANS PNP 50V 0.15A
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 180MHz
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
out of stock
2SA1179N6-CPA-TB-EonsemiDescription: TRANS PNP 50V 0.15A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 180MHz
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
available 6408525 pc(s)
lead time 21-31 days
7212+ 2.71 UAH
2SA1179N6-TB-EonsemiDescription: TRANS PNP 50V 0.15A 3CP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
available 247962 pc(s)
lead time 21-31 days
7212+ 2.71 UAH
2SA1179N6-TB-EonsemiDescription: TRANS PNP 50V 0.15A 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
out of stock
2SA1179N6-TB-EON SemiconductorTrans GP BJT PNP 50V 0.15A 200mW 3-Pin SOT-23 T/Rout of stock
2SA1179RM6-TBSANYON/Aavailable 2760 pc(s)
lead time 14-28 days
2SA118TO-39available 587 pc(s)
lead time 14-28 days
2SA1180N/Aavailable 1000 pc(s)
lead time 14-28 days
2SA1180available 1000 pc(s)
lead time 14-28 days
2SA1182ROHM09+available 5018 pc(s)
lead time 14-28 days
2SA1182ToshibaToshibaout of stock
2SA1182-GR(TE85L,FToshiba Semiconductor and StorageDescription: TRANS PNP 30V 0.5A S-MINIout of stock
2SA1182-GR(TE85L,FToshiba Semiconductor and StorageDescription: TRANS PNP 30V 0.5A S-MINIout of stock
2SA1182-GR(TE85L,FToshiba Semiconductor and StorageDescription: TRANS PNP 30V 0.5A S-MINIout of stock
2SA1182-GR,LFToshiba Semiconductor and StorageDescription: TRANS PNP 30V 0.5A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
available 5774 pc(s)
lead time 21-31 days
13+ 21.72 UAH
16+ 17.38 UAH
100+ 9.21 UAH
500+ 5.69 UAH
1000+ 3.87 UAH
2SA1182-GR,LFToshibaBipolar Transistors - BJT PNP TRANSISTORavailable 5820 pc(s)
lead time 14-21 days
13+ 23.42 UAH
16+ 18.9 UAH
100+ 8.85 UAH
500+ 5.83 UAH
1000+ 4.08 UAH
3000+ 3.14 UAH
9000+ 2.51 UAH
2SA1182-GR,LFToshiba Semiconductor and StorageDescription: TRANS PNP 30V 0.5A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
available 3000 pc(s)
lead time 21-31 days
3000+ 3.86 UAH
2SA1182-OTOSHIBASOT23available 9000 pc(s)
lead time 14-28 days
2SA1182-O TE85RTOSHIBASOT23-ZOavailable 66000 pc(s)
lead time 14-28 days
2SA1182-O(TE85L,F)Toshiba Semiconductor and StorageDescription: TRANS PNP 30V 0.5A S-MINIout of stock
2SA1182-O(TE85L,F)Toshiba Semiconductor and StorageDescription: TRANS PNP 30V 0.5A S-MINIout of stock
2SA1182-O(TE85L,F)Toshiba Semiconductor and StorageDescription: TRANS PNP 30V 0.5A S-MINIout of stock
2SA1182-O(TE85R)TOSHIBASOT23-ZOavailable 54000 pc(s)
lead time 14-28 days
2SA1182-O(TE85R) SOT23-ZTOSHIBAavailable 54000 pc(s)
lead time 14-28 days
2SA1182-YTOSHIBASOT23available 93032 pc(s)
lead time 14-28 days
2SA1182-YTOSHIBASOT23/SOT323available 2624 pc(s)
lead time 14-28 days
2SA1182-Y(T5L,F,T)TOSHIBAavailable 3000 pc(s)
lead time 14-28 days
2SA1182-Y(TE85L,F)TOSHIBASOT23/SOT323available 3000 pc(s)
lead time 14-28 days
2SA1182-Y(TE85L,F)ToshibaTrans GP BJT PNP 30V 0.5A 150mW Automotive 3-Pin S-Mini T/Rout of stock
2SA1182-Y(TE85L,F)TOSHIBASOT23available 794 pc(s)
lead time 14-28 days
2SA1182-Y(TE85L,F)ToshibaBipolar Transistors - BJT PNP Transistor -30V S-Mini -0.5A -0.25Vavailable 521 pc(s)
lead time 14-21 days
2SA1182-Y(TE85L,F)TOSHIBAavailable 9000 pc(s)
lead time 14-28 days
2SA1182-Y,LFToshibaBipolar Transistors - BJT Bias Resistor Built-in transistoravailable 17875 pc(s)
lead time 14-21 days
13+ 22.87 UAH
3000+ 3.7 UAH
9000+ 3.07 UAH
24000+ 2.95 UAH
45000+ 2.26 UAH
2SA1182-Y,LFToshiba Semiconductor and StorageDescription: TRANS PNP 30V 0.5A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
out of stock
2SA1182-Y,LFToshiba Semiconductor and StorageDescription: TRANS PNP 30V 0.5A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
out of stock
2SA1186
Product id: 168261
Transistors > Bipolar PNP
2SA1186SankenDescription: TRANS PNP 150V 10A TO3P
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3A, 4V
Frequency - Transition: 60MHz
Supplier Device Package: TO-3P
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 100 W
available 808 pc(s)
lead time 21-31 days
2+ 199.52 UAH
10+ 172.65 UAH
100+ 141.45 UAH
500+ 113 UAH
2SA1186Sanken Electric Co.Trans GP BJT PNP 150V 10A 100000mW 3-Pin(3+Tab) TO-3Pout of stock
2SA119TO-39available 655 pc(s)
lead time 14-28 days
2SA119NEC/TOSavailable 25500 pc(s)
lead time 14-28 days
2SA119available 25500 pc(s)
lead time 14-28 days
2SA119NECCANavailable 466 pc(s)
lead time 14-28 days
2SA1190DTZ-ERenesas Electronics America IncDescription: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
available 116079 pc(s)
lead time 21-31 days
1599+ 12.89 UAH
2SA1194KVRenesas Electronics America IncDescription: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
out of stock
2SA1197SANYOavailable 3000 pc(s)
lead time 14-28 days
2SA1198TO-92available 3300 pc(s)
lead time 14-28 days
2SA12TO-39available 719 pc(s)
lead time 14-28 days
2SA12HARRISCANavailable 985 pc(s)
lead time 14-28 days
2SA120TO-39available 698 pc(s)
lead time 14-28 days
2SA120NECCANavailable 485 pc(s)
lead time 14-28 days
2SA1200-Y(T2LHM,CF)ToshibaTrans GP BJT PNP 150V 0.05A 800mW 4-Pin(3+Tab) PW-Mini T/Rout of stock
2SA1201TOSHIBAavailable 120000 pc(s)
lead time 14-28 days
2SA1201KEXIN09+available 200018 pc(s)
lead time 14-28 days
2SA1201ToshibaToshibaout of stock
2SA1201-O-APMicro Commercial CoDescription: TRANS PNP 120V 0.8A SOT89
Packaging: Tape & Box (TB)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-89
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
out of stock
2SA1201-O-TPMicro Commercial ComponentsTrans GP BJT PNP 120V 0.8A 1000mW 4-Pin(3+Tab) SOT-89 T/Rout of stock
2SA1201-O-TPMicro Commercial ComponentsTrans GP BJT PNP 120V 0.8A 1000mW 4-Pin(3+Tab) SOT-89 T/Rout of stock
2SA1201-YN/A09+available 200018 pc(s)
lead time 14-28 days
2SA1201-Yavailable 2080 pc(s)
lead time 14-28 days
2SA1201-Y(T2RTORIF)TOSHIBASOT89available 788 pc(s)
lead time 14-28 days
2SA1201-Y(TE12L,CFToshiba Semiconductor and StorageDescription: TRANS PNP 120V 0.8A SC-62out of stock
2SA1201-Y(TE12L,CF)ToshibaTrans GP BJT PNP 120V 0.8A 4-Pin(3+Tab) PW-Mini T/Rout of stock
2SA1201-Y(TE12L,ZCToshiba Semiconductor and StorageDescription: PB-F POWER TRANSISTOR PW-MINI PD
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PW-MINI
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
available 639 pc(s)
lead time 21-31 days
8+ 35.29 UAH
10+ 29.02 UAH
100+ 21.68 UAH
500+ 15.98 UAH
2SA1201-Y(TE12L,ZCToshibaTrans GP BJT PNP 120V 0.8A 4-Pin(3+Tab) PW-Mini T/Rout of stock
2SA1201-Y(TE12L,ZCToshibaTrans GP BJT PNP 120V 0.8A 4-Pin(3+Tab) PW-Mini T/Ravailable 1126 pc(s)
lead time 21-31 days
563+ 18.14 UAH
566+ 18.05 UAH
697+ 14.67 UAH
1000+ 13.22 UAH
2SA1201-Y(TE12L,ZCToshibaBipolar Transistors - BJT TRANS POWERavailable 40362 pc(s)
lead time 14-21 days
8+ 37.18 UAH
10+ 33.33 UAH
1000+ 20.89 UAH
2000+ 20.64 UAH
5000+ 17.19 UAH
2SA1201-Y(TE12L,ZCToshiba Semiconductor and StorageDescription: PB-F POWER TRANSISTOR PW-MINI PD
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PW-MINI
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
out of stock
2SA1201-Y(TE12L,ZCToshibaTrans GP BJT PNP 120V 0.8A 4-Pin(3+Tab) PW-Mini T/Rout of stock
2SA1201-Y(TE12L,ZCToshibaTrans GP BJT PNP 120V 0.8A 4-Pin(3+Tab) PW-Mini T/Rout of stock
2SA1201-Y(TE12R,C)TOSHIBASOT89available 237 pc(s)
lead time 14-28 days
2SA1201-Y-TPMicro Commercial ComponentsTrans GP BJT PNP 120V 0.8A 1000mW 4-Pin(3+Tab) SOT-89 T/Rout of stock
2SA1201-Y-TPMicro Commercial Components (MCC)Bipolar Transistors - BJT PNP Medium Power Bipolar Transistorsout of stock
2SA1201-Y-TPMicro Commercial ComponentsTrans GP BJT PNP 120V 0.8A 1000mW 4-Pin(3+Tab) SOT-89 T/Rout of stock
2SA1201-Y-TPMicro Commercial CoDescription: TRANS PNP 120V 0.8A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-89
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
out of stock
2SA1201Y
Product id: 62191
Transistors > Bipolar PNP
2SA1202available 36000 pc(s)
lead time 14-28 days
2SA1202TOSHIBASOT-89available 1000 pc(s)
lead time 14-28 days
2SA1202TOSHIBAavailable 36000 pc(s)
lead time 14-28 days
2SA1202-YTOSHIBASOT-89available 2000 pc(s)
lead time 14-28 days
2SA1202-YTOSHIBAavailable 890 pc(s)
lead time 14-28 days
2SA1202-YN/A09+available 200018 pc(s)
lead time 14-28 days
2SA1202-Y(C)ToshibaBipolar Transistors - BJT PW-MINI-PLN,ACTIVE,DISCON(07-10)/PHASE-OUT(09-01)/OBSOLETE(09-04),out of stock
2SA1202-Y(T2LCRYDCToshibaBipolar Transistors - BJT PW-MINI-PLN,ACTIVE,DISCON(07-10)/PHASE-OUT(09-01)/OBSOLETE(09-04),out of stock
2SA1202-Y(TE12L,C)ToshibaBipolar Transistors - BJT PW-MINI-PLN,DISCON(07-10)/PHASE-OUT(11-01)/OBSOLETE(11-04),out of stock
2SA1203KESENES09+available 200018 pc(s)
lead time 14-28 days
2SA1203TOSHIBASOT89available 486 pc(s)
lead time 14-28 days
2SA1203available 36000 pc(s)
lead time 14-28 days
2SA1203TOSHIBAavailable 36000 pc(s)
lead time 14-28 days
2SA1203-0TOSHSOT223available 900 pc(s)
lead time 14-28 days
2SA1203-YTOSHIBAN/A SOT-89available 936 pc(s)
lead time 14-28 days
2SA1203-Y(TE12L,CFToshibaTrans GP BJT PNP 30V 1.5A 1000mW 4-Pin(3+Tab) PW-Mini T/Rout of stock
2SA1203-Y(TE12R,C)ToshibaBipolar Transistors - BJT PW-MINI-PLN,DISCON(07-10)/PHASE-OUT(10-01)/OBSOLETE(10-04),out of stock
2SA1204-YTOSHIBAavailable 38750 pc(s)
lead time 14-28 days
2SA1204-Yavailable 7000 pc(s)
lead time 14-28 days
2SA1204-YN/A09+available 200018 pc(s)
lead time 14-28 days
2SA1204-YKESENES09+available 7018&nbs