Продукція > B2M
| Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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| B2M-E3/45 | VISHAY | B2M-E3/45 SMD/THT sing. phase diode bridge rectif. | на замовлення 3040 шт: термін постачання 7-14 дні (днів) |
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| B2M-E3/45 | Vishay | Diode Rectifier Bridge Single 200V 0.5A 4-Pin Case MBM Tube | товар відсутній | |||||||||
| B2M-E3/45 | Vishay General Semiconductor | Bridge Rectifiers 0.5 Amp 200 Volt | на замовлення 8935 шт: термін постачання 21-30 дні (днів) |
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| B2M-E3/45 | Vishay General Semiconductor - Diodes Division | Description: BRIDGE RECT 1P 200V 500MA MBM | на замовлення 5556 шт: термін постачання 21-31 дні (днів) | |||||||||
| B2M035120YP | BASiC SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 115nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...18V Pulsed drain current: 190A Mounting: THT Case: TO247PLUS-4 Drain-source voltage: 1.2kV Drain current: 60A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 375W кількість в упаковці: 1 шт | товар відсутній | |||||||||
| B2M035120YP | BASiC SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 115nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...18V Pulsed drain current: 190A Mounting: THT Case: TO247PLUS-4 Drain-source voltage: 1.2kV Drain current: 60A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 375W | товар відсутній | |||||||||
| B2M065120H | BASiC SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W Polarisation: unipolar Case: TO247-3 Kind of package: tube Power dissipation: 250W Gate charge: 60nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...18V Pulsed drain current: 85A Mounting: THT Drain-source voltage: 1.2kV Drain current: 33A On-state resistance: 65mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт | на замовлення 11 шт: термін постачання 7-14 дні (днів) |
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| B2M065120H | BASiC SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W Polarisation: unipolar Case: TO247-3 Kind of package: tube Power dissipation: 250W Gate charge: 60nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...18V Pulsed drain current: 85A Mounting: THT Drain-source voltage: 1.2kV Drain current: 33A On-state resistance: 65mΩ Type of transistor: N-MOSFET | на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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| B2M065120R | BASiC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W Polarisation: unipolar Case: TO263-7 Kind of package: tube Power dissipation: 150W Features of semiconductor devices: Kelvin terminal Gate charge: 60nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...18V Pulsed drain current: 85A Mounting: SMD Drain-source voltage: 1.2kV Drain current: 24A On-state resistance: 65mΩ Type of transistor: N-MOSFET | на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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| B2M065120R | BASiC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W Polarisation: unipolar Case: TO263-7 Kind of package: tube Power dissipation: 150W Features of semiconductor devices: Kelvin terminal Gate charge: 60nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...18V Pulsed drain current: 85A Mounting: SMD Drain-source voltage: 1.2kV Drain current: 24A On-state resistance: 65mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт | на замовлення 50 шт: термін постачання 7-14 дні (днів) |
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| B2M065120Z | BASiC SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W Polarisation: unipolar Case: TO247-4 Kind of package: tube Power dissipation: 250W Features of semiconductor devices: Kelvin terminal Gate charge: 60nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...18V Pulsed drain current: 85A Mounting: THT Drain-source voltage: 1.2kV Drain current: 33A On-state resistance: 65mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт | товар відсутній | |||||||||
| B2M065120Z | BASiC SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W Polarisation: unipolar Case: TO247-4 Kind of package: tube Power dissipation: 250W Features of semiconductor devices: Kelvin terminal Gate charge: 60nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...18V Pulsed drain current: 85A Mounting: THT Drain-source voltage: 1.2kV Drain current: 33A On-state resistance: 65mΩ Type of transistor: N-MOSFET | товар відсутній | |||||||||
| B2M2S-D | Panduit | Cable Ties MKR Tie Metal Barb 8.0L (203mm) S | на замовлення 244 шт: термін постачання 21-30 дні (днів) |
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| B2M2S-D | Panduit Corp | Description: MARKER TIE NATURAL 50LBS 8" Packaging: Bulk Color: Natural Mounting Type: Free Hanging (In-Line) Material: Polyamide (PA66), Nylon 6/6 Tensile Strength: 50 lbs (22.68 kg) Wire/Cable Tie Type: Marker Strap/Flag Tie Width: 0.185" (4.70mm) Bundle Diameter: 2.00" (50.80mm) Part Status: Active Length - Actual: 0.667' (203.20mm, 8.00") Length - Approximate: 8" | на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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| B2M2S-D0 | Panduit | Cable Ties MKR Tie Metal Barb 8.0L (203mm) S | товар відсутній | |||||||||
| B2M2S-D0 | Panduit Corp | Description: MARKER TIE BLACK 50LBS 8" Packaging: Bulk Features: Weather Resistant Color: Black Mounting Type: Free Hanging (In-Line) Material: Polyamide (PA66), Nylon 6/6 Tensile Strength: 50 lbs (22.68 kg) Wire/Cable Tie Type: Marker Strap/Flag Tie Width: 0.185" (4.70mm) Bundle Diameter: 2.00" (50.80mm) Length - Actual: 0.667' (203.20mm, 8.00") Length - Approximate: 8" | товар відсутній | |||||||||
| B2MA4.5Z | NAIS | 07+ | на замовлення 20000 шт: термін постачання 14-28 дні (днів) |