| Фото | Назва | Виробник | Інформація |
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MC74LCX14DG | ONSEMI |
 Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 2÷3.6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS; TTL Mounting: SMD Case: SO14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: tube Kind of input: with Schmitt trigger Family: LCX |
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MC74LCX14DR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 2÷3.6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS; TTL Mounting: SMD Case: SO14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA Kind of input: with Schmitt trigger Family: LCX |
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MC74LCX14DTG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: tube Quiescent current: 10µA Kind of input: with Schmitt trigger Family: LCX |
на замовлення 316 шт: термін постачання 21-30 дні (днів) |
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MC74LCX14DTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; 10uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA Kind of input: with Schmitt trigger Family: LCX |
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| NCP606MN28T2G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 500mA; DFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.24V Output voltage: 2.8V Output current: 0.5A Case: DFN6 Mounting: SMD Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.5...6V Manufacturer series: NCP606 |
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| NCP606MN33T2G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; DFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.22V Output voltage: 3.3V Output current: 0.5A Case: DFN6 Mounting: SMD Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.5...6V Manufacturer series: NCP606 |
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| NCP606MN50T2G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 500mA; DFN6; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.2V Output voltage: 5V Output current: 0.5A Case: DFN6 Mounting: SMD Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.5...6V Manufacturer series: NCP606 |
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| NCP606MNADJT2G | ONSEMI |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 500mA Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 1.25...5V Output current: 0.5A Case: DFN6 Mounting: SMD Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 1.5...6V Manufacturer series: NCP606 |
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BD239CTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB Mounting: THT Case: TO220AB Kind of package: tube Collector-emitter voltage: 100V Current gain: 40 Collector current: 2A Type of transistor: NPN Power dissipation: 30W Polarisation: bipolar |
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FPF2107 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.4A; Ch: 1; P-Channel; SMD; SOT23-5 Supply voltage: 1.8...5.5V DC Mounting: SMD Output current: 0.4A Type of integrated circuit: power switch Kind of output: P-Channel Kind of package: reel; tape Case: SOT23-5 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 125mΩ |
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| FCH125N65S3R0-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 15A Pulsed drain current: 60A Power dissipation: 181W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.105Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhanced |
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| FCH165N65S3R0-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.3A Pulsed drain current: 47.5A Power dissipation: 154W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhanced |
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| CAT24C08HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Clock frequency: 400kHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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| CAT25010HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz; uDFN8 Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of interface: serial Memory: 1kb EEPROM Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 128x8bit Clock frequency: 20MHz |
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| CAT25080HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of interface: serial Memory: 8kb EEPROM Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 1024x8bit Clock frequency: 20MHz |
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| CAT25128HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of interface: serial Memory: 128kb EEPROM Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 16kx8bit Access time: 140ns Clock frequency: 20MHz |
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| CAT25160HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of interface: serial Memory: 16kb EEPROM Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 2048x8bit Access time: 40ns Clock frequency: 20MHz |
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| CAT25320HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 1.8÷5.5V; 10MHz; uDFN8 Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of interface: serial Memory: 32kb EEPROM Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 4kx8bit Access time: 40ns Clock frequency: 10MHz |
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| CAT25640HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; uDFN8 Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of interface: serial Memory: 64kb EEPROM Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 8kx8bit Access time: 40ns Clock frequency: 20MHz |
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| CAT34C02HU4IGT4A | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of interface: serial Memory: 2kb EEPROM Operating voltage: 1.7...5.5V Type of integrated circuit: EEPROM memory Interface: I2C Kind of memory: EEPROM Memory organisation: 256x8bit Access time: 900ns Clock frequency: 400kHz |
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| NCP51402MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Output voltage: -0.1...3.5V Application: for DDR memories Number of channels: 1 Output current: 3A Mounting: SMD Type of integrated circuit: PMIC Operating voltage: 0.5...1.8/2.375...5.5V Case: DFN10 Operating temperature: -40...125°C Kind of integrated circuit: DDR memory termination regulator |
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| NCP51403MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Output voltage: -0.1...3.5V Application: for DDR memories Number of channels: 1 Output current: 3A Mounting: SMD Type of integrated circuit: PMIC Operating voltage: 0.5...1.8/2.375...5.5V Case: DFN10 Operating temperature: max. 150°C Kind of integrated circuit: DDR memory termination regulator |
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| NCP51510MNTAG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10 Case: DFN10 Mounting: SMD Operating voltage: 1.1...3.6/2.7...3.6V Output voltage: 0.5...1.5V Output current: 3A Type of integrated circuit: PMIC Number of channels: 1 Application: for DDR memories Kind of integrated circuit: DDR memory termination regulator Operating temperature: -40...125°C |
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| NCV51198PDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V Output voltage: 0.675...1.35V Application: automotive industry; for DDR memories Number of channels: 1 Output current: 1.5A Mounting: SMD Type of integrated circuit: PMIC Operating voltage: 1.35...2.5/2.2...5.5V Case: SO8-EP Operating temperature: -40...125°C Kind of integrated circuit: DDR memory termination regulator |
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| NCV51199PDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: 0.75÷2.5V Output voltage: 0.75...2.5V Application: automotive industry; for DDR memories Number of channels: 1 Output current: 2A Mounting: SMD Type of integrated circuit: PMIC Operating voltage: 1.5...5.5/4.75...5.5V Case: SO8-EP Operating temperature: max. 125°C Kind of integrated circuit: DDR memory termination regulator |
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| NCV51400MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Output voltage: -0.1...3.5V Application: automotive industry; for DDR memories Number of channels: 1 Output current: 3A Mounting: SMD Type of integrated circuit: PMIC Operating voltage: 0.5...1.8/2.375...5.5V Case: DFN10 Operating temperature: max. 150°C Kind of integrated circuit: DDR memory termination regulator |
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| NCV51400MWTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Output voltage: -0.1...3.5V Application: automotive industry; for DDR memories Number of channels: 1 Output current: 3A Mounting: SMD Type of integrated circuit: PMIC Operating voltage: 0.5...1.8/2.375...5.5V Case: DFN10 Operating temperature: max. 150°C Kind of integrated circuit: DDR memory termination regulator |
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| NCV51510MNTAG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10 Case: DFN10 Mounting: SMD Operating voltage: 1.1...3.6/2.7...3.6V Output voltage: 0.5...1.5V Output current: 3A Type of integrated circuit: PMIC Number of channels: 1 Application: automotive industry; for DDR memories Kind of integrated circuit: DDR memory termination regulator Operating temperature: -40...125°C |
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FCP067N65S3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 28A Pulsed drain current: 110A Power dissipation: 312W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 67mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
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| NTH027N65S3F-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Pulsed drain current: 187.5A Power dissipation: 595W Case: TO247 Gate-source voltage: ±30V On-state resistance: 23mΩ Mounting: THT Gate charge: 259nC Kind of package: tube Kind of channel: enhanced |
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| NTHL027N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247 Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Pulsed drain current: 187.5A Power dissipation: 595W Case: TO247 Gate-source voltage: ±30V On-state resistance: 27.4mΩ Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhanced |
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1SMB5919BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 5.6V; 66.9mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 5.6V Zener current: 66.9mA Mounting: SMD Tolerance: ±5% Zener resistance: 2Ω Kind of package: reel; tape Case: SMB Semiconductor structure: single diode |
на замовлення 8725 шт: термін постачання 21-30 дні (днів) |
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MCT2EM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Case: DIP6 Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV CTR@If: 20%@10mA Type of optocoupler: optocoupler Collector-emitter voltage: 30V |
на замовлення 635 шт: термін постачання 21-30 дні (днів) |
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MJD127G | ONSEMI |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 100...12000 Mounting: SMD Kind of package: tube Frequency: 4MHz |
на замовлення 334 шт: термін постачання 21-30 дні (днів) |
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MCT9001 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8 Collector-emitter voltage: 55V Number of channels: 2 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-600%@5mA Type of optocoupler: optocoupler Mounting: THT Case: DIP8 |
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| BAS21M3T5G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOT723; Ufmax: 1.25V; 640mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOT723 Max. forward voltage: 1.25V Max. forward impulse current: 625mA Leakage current: 0.1mA Power dissipation: 640mW Kind of package: reel; tape |
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BAS21SLT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.225A; 50ns; SOT23; Ufmax: 1.25V; 300mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.225A Reverse recovery time: 50ns Semiconductor structure: double series Capacitance: 5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 625mA Power dissipation: 0.3W Kind of package: reel; tape |
на замовлення 1275 шт: термін постачання 21-30 дні (днів) |
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| SBAS21DW5T1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 200mA; 50ns; SC88A; Ufmax: 1.25V; 385mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: double independent Capacitance: 5pF Case: SC88A Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 0.1mA Power dissipation: 0.385W Kind of package: reel; tape Application: automotive industry |
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| SBAS21DW5T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 200mA; 50ns; SC88A; Ufmax: 1.25V; 385mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: double independent Capacitance: 5pF Case: SC88A Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 0.1mA Power dissipation: 0.385W Kind of package: reel; tape Application: automotive industry |
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NSVBAS21HT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Max. load current: 0.5A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry |
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MC33204DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 2.2MHz; Ch: 4; SO14; reel,tape Mounting: SMT Operating temperature: -40...105°C Type of integrated circuit: operational amplifier Number of channels: 4 Bandwidth: 2.2MHz Input offset voltage: 10mV Integrated circuit features: rail-to-rail Kind of package: reel; tape Slew rate: 1V/μs Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC Case: SO14 |
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KSC2383YTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92L Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.9W Case: TO92L Current gain: 160...320 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
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| NRVUD320VT4G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 35ns; DPAK; Ufmax: 0.95V; Ifsm: 75A Mounting: SMD Application: automotive industry Max. forward impulse current: 75A Max. forward voltage: 0.95V Max. off-state voltage: 200V Load current: 3A Max. load current: 6A Kind of package: reel; tape Semiconductor structure: single diode Case: DPAK Type of diode: rectifying Reverse recovery time: 35ns |
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| 74ALVC16245MTDX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver; Ch: 16; SMD; TSSOP48; 40uA Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 16 Mounting: SMD Case: TSSOP48 Supply voltage: 1.65...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA |
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MC78M05CDTRKG | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 5V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 7...20V Manufacturer series: MC78M00 |
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MC78M05CTG | ONSEMI |
 Category: Unregulated voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 5V; 0.5A; TO220AB; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 5V Output current: 0.5A Case: TO220AB Mounting: THT Kind of package: tube Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Heatsink thickness: 0.508...0.61mm Input voltage: 7...20V Manufacturer series: MC78M00 |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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BC847CWT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
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BCP53T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
на замовлення 560 шт: термін постачання 21-30 дні (днів) |
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SBCP53-10T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
на замовлення 80 шт: термін постачання 21-30 дні (днів) |
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SBCP53T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223 Current gain: 25...250 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
на замовлення 995 шт: термін постачання 21-30 дні (днів) |
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GBU4A | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
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FDP42AN15A0 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB Mounting: THT Kind of package: tube Drain current: 24A On-state resistance: 0.107Ω Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Gate charge: 39nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Case: TO220AB Drain-source voltage: 150V |
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| NCP57152DSADJR4G | ONSEMI |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.24÷13V; 1.5A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.52V Output voltage: 1.24...13V Output current: 1.5A Case: D2PAK-5 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 1.8...13.5V Manufacturer series: NCP57152 |
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FDN5630 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 0.5W; SuperSOT-3 Mounting: SMD Drain-source voltage: 60V Drain current: 1.7A On-state resistance: 0.18Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: logic level Gate charge: 10nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Case: SuperSOT-3 |
на замовлення 4695 шт: термін постачання 21-30 дні (днів) |
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BAT54SWT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT323; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Max. load current: 0.3A Reverse recovery time: 5ns Semiconductor structure: double series Capacitance: 7.6pF Max. forward voltage: 0.8V Case: SOT323 Kind of package: reel; tape Max. forward impulse current: 0.6A Power dissipation: 0.2W |
на замовлення 3288 шт: термін постачання 21-30 дні (днів) |
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H11G2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington Insulation voltage: 4.17kV CTR@If: 100%@10mA Collector-emitter voltage: 80V Case: DIP6 |
на замовлення 722 шт: термін постачання 21-30 дні (днів) |
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| FPF2411BUCX-F130 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C Case: WLCSP12 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape On-state resistance: 12mΩ Type of integrated circuit: power switch Number of channels: 1 Active logical level: low Supply voltage: 2.3...5.5V DC |
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FPF2124 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; 1.5A; Ch: 1; P-Channel; SMD; SOT23-5; reel,tape Case: SOT23-5 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape On-state resistance: 0.15Ω Output current: 1.5A Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Active logical level: high Integrated circuit features: thermal protection; undervoltage protection Supply voltage: 1.8...5.5V DC |
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MJF45H11G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 80V; 10A; 36W; TO220FP Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 36W Case: TO220FP Mounting: THT Kind of package: tube |
на замовлення 228 шт: термін постачання 21-30 дні (днів) |
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BZX84B5V6LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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| MC74LCX14DG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: LCX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: LCX
товар відсутній
| MC74LCX14DR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LCX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LCX
товар відсутній
| MC74LCX14DTG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LCX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LCX
на замовлення 316 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 53.65 грн |
| 10+ | 40.76 грн |
| 33+ | 24.65 грн |
| 91+ | 23.31 грн |
| MC74LCX14DTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LCX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LCX
товар відсутній
| NCP606MN28T2G |
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Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 500mA; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.24V
Output voltage: 2.8V
Output current: 0.5A
Case: DFN6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.5...6V
Manufacturer series: NCP606
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 500mA; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.24V
Output voltage: 2.8V
Output current: 0.5A
Case: DFN6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.5...6V
Manufacturer series: NCP606
товар відсутній
| NCP606MN33T2G |
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Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.22V
Output voltage: 3.3V
Output current: 0.5A
Case: DFN6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.5...6V
Manufacturer series: NCP606
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.22V
Output voltage: 3.3V
Output current: 0.5A
Case: DFN6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.5...6V
Manufacturer series: NCP606
товар відсутній
| NCP606MN50T2G |
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Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 500mA; DFN6; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.2V
Output voltage: 5V
Output current: 0.5A
Case: DFN6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.5...6V
Manufacturer series: NCP606
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 500mA; DFN6; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.2V
Output voltage: 5V
Output current: 0.5A
Case: DFN6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.5...6V
Manufacturer series: NCP606
товар відсутній
| NCP606MNADJT2G |
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Виробник: ONSEMI
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 500mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...5V
Output current: 0.5A
Case: DFN6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 1.5...6V
Manufacturer series: NCP606
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 500mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...5V
Output current: 0.5A
Case: DFN6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 1.5...6V
Manufacturer series: NCP606
товар відсутній
| BD239CTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Collector-emitter voltage: 100V
Current gain: 40
Collector current: 2A
Type of transistor: NPN
Power dissipation: 30W
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Collector-emitter voltage: 100V
Current gain: 40
Collector current: 2A
Type of transistor: NPN
Power dissipation: 30W
Polarisation: bipolar
товар відсутній
| FPF2107 |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; P-Channel; SMD; SOT23-5
Supply voltage: 1.8...5.5V DC
Mounting: SMD
Output current: 0.4A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
Case: SOT23-5
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 125mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; P-Channel; SMD; SOT23-5
Supply voltage: 1.8...5.5V DC
Mounting: SMD
Output current: 0.4A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
Case: SOT23-5
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 125mΩ
товар відсутній
| FCH125N65S3R0-F155 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FCH165N65S3R0-F155 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.3A
Pulsed drain current: 47.5A
Power dissipation: 154W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.3A
Pulsed drain current: 47.5A
Power dissipation: 154W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| CAT24C08HU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| CAT25010HU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of interface: serial
Memory: 1kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 128x8bit
Clock frequency: 20MHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of interface: serial
Memory: 1kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 128x8bit
Clock frequency: 20MHz
товар відсутній
| CAT25080HU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of interface: serial
Memory: 8kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 1024x8bit
Clock frequency: 20MHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of interface: serial
Memory: 8kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 1024x8bit
Clock frequency: 20MHz
товар відсутній
| CAT25128HU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of interface: serial
Memory: 128kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 140ns
Clock frequency: 20MHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of interface: serial
Memory: 128kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 140ns
Clock frequency: 20MHz
товар відсутній
| CAT25160HU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of interface: serial
Memory: 16kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 2048x8bit
Access time: 40ns
Clock frequency: 20MHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of interface: serial
Memory: 16kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 2048x8bit
Access time: 40ns
Clock frequency: 20MHz
товар відсутній
| CAT25320HU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 1.8÷5.5V; 10MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of interface: serial
Memory: 32kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 4kx8bit
Access time: 40ns
Clock frequency: 10MHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 1.8÷5.5V; 10MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of interface: serial
Memory: 32kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 4kx8bit
Access time: 40ns
Clock frequency: 10MHz
товар відсутній
| CAT25640HU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of interface: serial
Memory: 64kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 8kx8bit
Access time: 40ns
Clock frequency: 20MHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of interface: serial
Memory: 64kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 8kx8bit
Access time: 40ns
Clock frequency: 20MHz
товар відсутній
| CAT34C02HU4IGT4A |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of interface: serial
Memory: 2kb EEPROM
Operating voltage: 1.7...5.5V
Type of integrated circuit: EEPROM memory
Interface: I2C
Kind of memory: EEPROM
Memory organisation: 256x8bit
Access time: 900ns
Clock frequency: 400kHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of interface: serial
Memory: 2kb EEPROM
Operating voltage: 1.7...5.5V
Type of integrated circuit: EEPROM memory
Interface: I2C
Kind of memory: EEPROM
Memory organisation: 256x8bit
Access time: 900ns
Clock frequency: 400kHz
товар відсутній
| NCP51402MNTXG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Output voltage: -0.1...3.5V
Application: for DDR memories
Number of channels: 1
Output current: 3A
Mounting: SMD
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V
Case: DFN10
Operating temperature: -40...125°C
Kind of integrated circuit: DDR memory termination regulator
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Output voltage: -0.1...3.5V
Application: for DDR memories
Number of channels: 1
Output current: 3A
Mounting: SMD
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V
Case: DFN10
Operating temperature: -40...125°C
Kind of integrated circuit: DDR memory termination regulator
товар відсутній
| NCP51403MNTXG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Output voltage: -0.1...3.5V
Application: for DDR memories
Number of channels: 1
Output current: 3A
Mounting: SMD
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V
Case: DFN10
Operating temperature: max. 150°C
Kind of integrated circuit: DDR memory termination regulator
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Output voltage: -0.1...3.5V
Application: for DDR memories
Number of channels: 1
Output current: 3A
Mounting: SMD
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V
Case: DFN10
Operating temperature: max. 150°C
Kind of integrated circuit: DDR memory termination regulator
товар відсутній
| NCP51510MNTAG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Case: DFN10
Mounting: SMD
Operating voltage: 1.1...3.6/2.7...3.6V
Output voltage: 0.5...1.5V
Output current: 3A
Type of integrated circuit: PMIC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Operating temperature: -40...125°C
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Case: DFN10
Mounting: SMD
Operating voltage: 1.1...3.6/2.7...3.6V
Output voltage: 0.5...1.5V
Output current: 3A
Type of integrated circuit: PMIC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Operating temperature: -40...125°C
товар відсутній
| NCV51198PDR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V
Output voltage: 0.675...1.35V
Application: automotive industry; for DDR memories
Number of channels: 1
Output current: 1.5A
Mounting: SMD
Type of integrated circuit: PMIC
Operating voltage: 1.35...2.5/2.2...5.5V
Case: SO8-EP
Operating temperature: -40...125°C
Kind of integrated circuit: DDR memory termination regulator
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V
Output voltage: 0.675...1.35V
Application: automotive industry; for DDR memories
Number of channels: 1
Output current: 1.5A
Mounting: SMD
Type of integrated circuit: PMIC
Operating voltage: 1.35...2.5/2.2...5.5V
Case: SO8-EP
Operating temperature: -40...125°C
Kind of integrated circuit: DDR memory termination regulator
товар відсутній
| NCV51199PDR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.75÷2.5V
Output voltage: 0.75...2.5V
Application: automotive industry; for DDR memories
Number of channels: 1
Output current: 2A
Mounting: SMD
Type of integrated circuit: PMIC
Operating voltage: 1.5...5.5/4.75...5.5V
Case: SO8-EP
Operating temperature: max. 125°C
Kind of integrated circuit: DDR memory termination regulator
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.75÷2.5V
Output voltage: 0.75...2.5V
Application: automotive industry; for DDR memories
Number of channels: 1
Output current: 2A
Mounting: SMD
Type of integrated circuit: PMIC
Operating voltage: 1.5...5.5/4.75...5.5V
Case: SO8-EP
Operating temperature: max. 125°C
Kind of integrated circuit: DDR memory termination regulator
товар відсутній
| NCV51400MNTXG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Output voltage: -0.1...3.5V
Application: automotive industry; for DDR memories
Number of channels: 1
Output current: 3A
Mounting: SMD
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V
Case: DFN10
Operating temperature: max. 150°C
Kind of integrated circuit: DDR memory termination regulator
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Output voltage: -0.1...3.5V
Application: automotive industry; for DDR memories
Number of channels: 1
Output current: 3A
Mounting: SMD
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V
Case: DFN10
Operating temperature: max. 150°C
Kind of integrated circuit: DDR memory termination regulator
товар відсутній
| NCV51400MWTXG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Output voltage: -0.1...3.5V
Application: automotive industry; for DDR memories
Number of channels: 1
Output current: 3A
Mounting: SMD
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V
Case: DFN10
Operating temperature: max. 150°C
Kind of integrated circuit: DDR memory termination regulator
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Output voltage: -0.1...3.5V
Application: automotive industry; for DDR memories
Number of channels: 1
Output current: 3A
Mounting: SMD
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V
Case: DFN10
Operating temperature: max. 150°C
Kind of integrated circuit: DDR memory termination regulator
товар відсутній
| NCV51510MNTAG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Case: DFN10
Mounting: SMD
Operating voltage: 1.1...3.6/2.7...3.6V
Output voltage: 0.5...1.5V
Output current: 3A
Type of integrated circuit: PMIC
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Operating temperature: -40...125°C
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Case: DFN10
Mounting: SMD
Operating voltage: 1.1...3.6/2.7...3.6V
Output voltage: 0.5...1.5V
Output current: 3A
Type of integrated circuit: PMIC
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Operating temperature: -40...125°C
товар відсутній
| FCP067N65S3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 312W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 312W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NTH027N65S3F-F155 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NTHL027N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 27.4mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 27.4mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| 1SMB5919BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.6V; 66.9mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Zener current: 66.9mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 2Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.6V; 66.9mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Zener current: 66.9mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 2Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
на замовлення 8725 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 15.8 грн |
| 40+ | 9.69 грн |
| 100+ | 8.03 грн |
| 110+ | 7.33 грн |
| 305+ | 6.92 грн |
| 2500+ | 6.64 грн |
| MCT2EM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Case: DIP6
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Collector-emitter voltage: 30V
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Case: DIP6
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Collector-emitter voltage: 30V
на замовлення 635 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 26.45 грн |
| 19+ | 18.61 грн |
| 50+ | 16.47 грн |
| 58+ | 13.82 грн |
| 160+ | 13.06 грн |
| MJD127G |
|
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 100...12000
Mounting: SMD
Kind of package: tube
Frequency: 4MHz
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 100...12000
Mounting: SMD
Kind of package: tube
Frequency: 4MHz
на замовлення 334 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.79 грн |
| 22+ | 38.06 грн |
| 59+ | 35.98 грн |
| MCT9001 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8
Collector-emitter voltage: 55V
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@5mA
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP8
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8
Collector-emitter voltage: 55V
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@5mA
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP8
товар відсутній
| BAS21M3T5G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOT723; Ufmax: 1.25V; 640mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT723
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Leakage current: 0.1mA
Power dissipation: 640mW
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOT723; Ufmax: 1.25V; 640mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT723
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Leakage current: 0.1mA
Power dissipation: 640mW
Kind of package: reel; tape
товар відсутній
| BAS21SLT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.225A; 50ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: double series
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.225A; 50ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: double series
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Power dissipation: 0.3W
Kind of package: reel; tape
на замовлення 1275 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 115+ | 3.24 грн |
| 170+ | 2.05 грн |
| 485+ | 1.69 грн |
| SBAS21DW5T1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SC88A; Ufmax: 1.25V; 385mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Capacitance: 5pF
Case: SC88A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.385W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SC88A; Ufmax: 1.25V; 385mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Capacitance: 5pF
Case: SC88A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.385W
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| SBAS21DW5T3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SC88A; Ufmax: 1.25V; 385mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Capacitance: 5pF
Case: SC88A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.385W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SC88A; Ufmax: 1.25V; 385mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Capacitance: 5pF
Case: SC88A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.385W
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| NSVBAS21HT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Max. load current: 0.5A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Max. load current: 0.5A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| MC33204DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 4; SO14; reel,tape
Mounting: SMT
Operating temperature: -40...105°C
Type of integrated circuit: operational amplifier
Number of channels: 4
Bandwidth: 2.2MHz
Input offset voltage: 10mV
Integrated circuit features: rail-to-rail
Kind of package: reel; tape
Slew rate: 1V/μs
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Case: SO14
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 4; SO14; reel,tape
Mounting: SMT
Operating temperature: -40...105°C
Type of integrated circuit: operational amplifier
Number of channels: 4
Bandwidth: 2.2MHz
Input offset voltage: 10mV
Integrated circuit features: rail-to-rail
Kind of package: reel; tape
Slew rate: 1V/μs
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Case: SO14
товар відсутній
| KSC2383YTA |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92L
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92L
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92L
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92L
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
товар відсутній
| NRVUD320VT4G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; DPAK; Ufmax: 0.95V; Ifsm: 75A
Mounting: SMD
Application: automotive industry
Max. forward impulse current: 75A
Max. forward voltage: 0.95V
Max. off-state voltage: 200V
Load current: 3A
Max. load current: 6A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DPAK
Type of diode: rectifying
Reverse recovery time: 35ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; DPAK; Ufmax: 0.95V; Ifsm: 75A
Mounting: SMD
Application: automotive industry
Max. forward impulse current: 75A
Max. forward voltage: 0.95V
Max. off-state voltage: 200V
Load current: 3A
Max. load current: 6A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DPAK
Type of diode: rectifying
Reverse recovery time: 35ns
товар відсутній
| 74ALVC16245MTDX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 16; SMD; TSSOP48; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 16
Mounting: SMD
Case: TSSOP48
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 16; SMD; TSSOP48; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 16
Mounting: SMD
Case: TSSOP48
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
товар відсутній
| MC78M05CDTRKG |
|
Виробник: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: MC78M00
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: MC78M00
товар відсутній
| MC78M05CTG | |
|
Виробник: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Input voltage: 7...20V
Manufacturer series: MC78M00
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Input voltage: 7...20V
Manufacturer series: MC78M00
на замовлення 21 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 36.51 грн |
| 12+ | 30.24 грн |
| 13+ | 26.92 грн |
| BC847CWT3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товар відсутній
| BCP53T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
на замовлення 560 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 23.85 грн |
| 20+ | 17.92 грн |
| 82+ | 9.96 грн |
| 224+ | 9.41 грн |
| SBCP53-10T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
на замовлення 80 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 19.08 грн |
| 40+ | 9.62 грн |
| SBCP53T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
на замовлення 995 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 24.14 грн |
| 25+ | 13.84 грн |
| 90+ | 9.5 грн |
| 235+ | 8.98 грн |
| GBU4A |
|
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товар відсутній
| FDP42AN15A0 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Mounting: THT
Kind of package: tube
Drain current: 24A
On-state resistance: 0.107Ω
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 39nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220AB
Drain-source voltage: 150V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Mounting: THT
Kind of package: tube
Drain current: 24A
On-state resistance: 0.107Ω
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 39nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220AB
Drain-source voltage: 150V
товар відсутній
| NCP57152DSADJR4G |
|
Виробник: ONSEMI
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.24÷13V; 1.5A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.52V
Output voltage: 1.24...13V
Output current: 1.5A
Case: D2PAK-5
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 1.8...13.5V
Manufacturer series: NCP57152
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.24÷13V; 1.5A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.52V
Output voltage: 1.24...13V
Output current: 1.5A
Case: D2PAK-5
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 1.8...13.5V
Manufacturer series: NCP57152
товар відсутній
| FDN5630 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 0.5W; SuperSOT-3
Mounting: SMD
Drain-source voltage: 60V
Drain current: 1.7A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 10nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SuperSOT-3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 0.5W; SuperSOT-3
Mounting: SMD
Drain-source voltage: 60V
Drain current: 1.7A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 10nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SuperSOT-3
на замовлення 4695 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 17.59 грн |
| 30+ | 12.59 грн |
| 85+ | 9.69 грн |
| 230+ | 9.13 грн |
| BAT54SWT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Reverse recovery time: 5ns
Semiconductor structure: double series
Capacitance: 7.6pF
Max. forward voltage: 0.8V
Case: SOT323
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Reverse recovery time: 5ns
Semiconductor structure: double series
Capacitance: 7.6pF
Max. forward voltage: 0.8V
Case: SOT323
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
на замовлення 3288 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 12.67 грн |
| 36+ | 9.83 грн |
| 59+ | 5.92 грн |
| 100+ | 3.94 грн |
| 250+ | 3.55 грн |
| 469+ | 1.73 грн |
| 1289+ | 1.63 грн |
| H11G2M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
CTR@If: 100%@10mA
Collector-emitter voltage: 80V
Case: DIP6
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
CTR@If: 100%@10mA
Collector-emitter voltage: 80V
Case: DIP6
на замовлення 722 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 64.83 грн |
| 10+ | 36.95 грн |
| 25+ | 31.83 грн |
| 32+ | 25.67 грн |
| 87+ | 24.29 грн |
| 500+ | 23.73 грн |
| FPF2411BUCX-F130 |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C
Case: WLCSP12
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 12mΩ
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Supply voltage: 2.3...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C
Case: WLCSP12
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 12mΩ
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Supply voltage: 2.3...5.5V DC
товар відсутній
| FPF2124 |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 1.5A; Ch: 1; P-Channel; SMD; SOT23-5; reel,tape
Case: SOT23-5
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
On-state resistance: 0.15Ω
Output current: 1.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Integrated circuit features: thermal protection; undervoltage protection
Supply voltage: 1.8...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; 1.5A; Ch: 1; P-Channel; SMD; SOT23-5; reel,tape
Case: SOT23-5
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
On-state resistance: 0.15Ω
Output current: 1.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Integrated circuit features: thermal protection; undervoltage protection
Supply voltage: 1.8...5.5V DC
товар відсутній
| MJF45H11G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 36W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 36W
Case: TO220FP
Mounting: THT
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 36W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 36W
Case: TO220FP
Mounting: THT
Kind of package: tube
на замовлення 228 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.49 грн |
| 10+ | 83.72 грн |
| 12+ | 72.65 грн |
| 31+ | 68.5 грн |
| BZX84B5V6LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.59 грн |
| 175+ | 2.17 грн |