| Фото | Назва | Виробник | Інформація |
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MC74LVXC3245DTG | ONSEMI |
 Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; TSSOP24 Mounting: SMD Operating temperature: -40...85°C Case: TSSOP24 Type of integrated circuit: digital Kind of output: 3-state Technology: CMOS Kind of package: tube Kind of integrated circuit: 3-state; octal; transceiver Number of channels: 8 Supply voltage: 2.3...3.6V DC; 3...5.5V DC Manufacturer series: LVXC |
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MC74LVXC3245DTRG | ONSEMI |
Category: Level translators Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver; translator Number of channels: 8 Supply voltage: 2.3...5.5V DC Mounting: SMD Case: TSSOP24 Operating temperature: -40...85°C Kind of package: reel; tape Manufacturer series: LVX Quiescent current: 50µA Kind of output: 3-state |
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MC74LVXC3245DWRG | ONSEMI |
Category: Level translators Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver; translator Number of channels: 8 Supply voltage: 2.3...3.6V DC Mounting: SMD Case: SO24 Operating temperature: -40...85°C Kind of package: reel; tape Manufacturer series: 74LVXC Kind of output: 3-state |
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NJW3281G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 250V; 15A; 200W; TO3P Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 15A Power dissipation: 200W Case: TO3P Current gain: 45...150 Mounting: THT Kind of package: tube Frequency: 30MHz Application: automotive industry |
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NJW21194G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO3P Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 200W Case: TO3P Current gain: 20...80 Mounting: THT Kind of package: tube Frequency: 4MHz Application: automotive industry |
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MMBT5088LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 0.05A; 0.225/0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 50mA Power dissipation: 0.225/0.3W Case: SOT23 Current gain: 300...900 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
на замовлення 2875 шт: термін постачання 21-30 дні (днів) |
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SMMBT5088LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 0.05A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 50mA Power dissipation: 0.225W Case: SOT23 Current gain: 300...1200 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
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FQPF47P06 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -21.2A; 62W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Drain-source voltage: -60V Drain current: -21.2A On-state resistance: 26mΩ Type of transistor: P-MOSFET Power dissipation: 62W Polarisation: unipolar Gate charge: 110nC Technology: QFET® Kind of channel: enhanced Gate-source voltage: ±25V |
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FQPF47P06YDTU | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -21.2A; Idm: -120A; 62W Mounting: THT Case: TO220FP Kind of package: tube Pulsed drain current: -120A Power dissipation: 62W Gate charge: 110nC Polarisation: unipolar Drain current: -21.2A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±25V On-state resistance: 26mΩ |
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| NCP4328ASNT1G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; 2.5÷40V; TSOP5 Mounting: SMD Operating temperature: -40...125°C Type of integrated circuit: PMIC Number of channels: 1 Case: TSOP5 Operating voltage: 2.5...40V |
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| NCP4328BSNT1G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; 2.5÷40V; TSOP6 Mounting: SMD Operating temperature: -40...125°C Type of integrated circuit: PMIC Number of channels: 1 Case: TSOP6 Operating voltage: 2.5...40V Frequency: 1kHz |
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FSBB30CH60C | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMEC-027 Type of integrated circuit: driver Topology: IGBT three-phase bridge Kind of integrated circuit: 3-phase motor controller; IPM Technology: Motion SPM® 3 Case: SPMEC-027 Output current: 30A Number of channels: 6 Mounting: THT Operating temperature: -40...150°C Operating voltage: 13.5...16.5/0...400V Power dissipation: 106W Collector-emitter voltage: 600V |
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| FPF1018 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; uDFN6 Case: uDFN6 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape On-state resistance: 34mΩ Output current: 1.5A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Active logical level: high Integrated circuit features: ESD-protected; output discharge Kind of integrated circuit: high-side Supply voltage: 0.8...1.8V DC |
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| FPF1038UCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3.5A; Ch: 2; P-Channel; SMD; WLCSP6 Case: WLCSP6 Supply voltage: -0.3...6V DC On-state resistance: 0.1Ω Output current: 3.5A Type of integrated circuit: power switch Number of channels: 2 Kind of output: P-Channel Kind of package: reel; tape Kind of integrated circuit: high-side Mounting: SMD |
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| FPF1048BUCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C Operating temperature: -40...85°C Case: WLCSP6 Mounting: SMD Supply voltage: 1.5...5.5V DC Active logical level: high Type of integrated circuit: power switch Integrated circuit features: ESD-protected Kind of package: reel; tape Number of channels: 1 On-state resistance: 90mΩ |
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| FPF2002 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; 50mA; Ch: 1; P-Channel; SMD; SC70-5; reel,tape Mounting: SMD Case: SC70-5 Kind of package: reel; tape Operating temperature: -40...125°C Supply voltage: 1.8...5.5V DC Number of channels: 1 Kind of output: P-Channel Active logical level: high Integrated circuit features: thermal protection; undervoltage protection On-state resistance: 0.85Ω Output current: 50mA Type of integrated circuit: power switch |
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| FPF2004 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.1A; Ch: 1; P-Channel; SMD; SC70-5 Mounting: SMD Case: SC70-5 Kind of package: reel; tape Supply voltage: 1.8...5.5V DC Number of channels: 1 Kind of output: P-Channel Kind of integrated circuit: high-side On-state resistance: 0.7Ω Output current: 0.1A Type of integrated circuit: power switch |
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| FPF2006 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 0.1A; Ch: 1; P-Channel; SMD; SC70-5 Mounting: SMD Case: SC70-5 Kind of package: reel; tape Supply voltage: 1.8...5.5V DC Number of channels: 1 Kind of output: P-Channel Kind of integrated circuit: low-side On-state resistance: 0.7Ω Output current: 0.1A Type of integrated circuit: power switch |
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NTHL020N090SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 427A; 251W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 900V Drain current: 83A Pulsed drain current: 427A Power dissipation: 251W Case: TO247-3 Gate-source voltage: -10...19V On-state resistance: 28mΩ Mounting: THT Gate charge: 196nC Kind of package: tube Kind of channel: enhanced |
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NTHL020N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 412A; 267W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 73A Pulsed drain current: 412A Power dissipation: 267W Case: TO247-3 Gate-source voltage: -15...25V On-state resistance: 28mΩ Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhanced |
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| NTHL033N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 53A; Idm: 175A; 500W; TO247 Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 53A Pulsed drain current: 175A Power dissipation: 500W Case: TO247 Gate-source voltage: ±30V On-state resistance: 33mΩ Mounting: THT Gate charge: 188nC Kind of package: tube Kind of channel: enhanced |
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| NTHL040N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247 Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 45A Pulsed drain current: 162.5A Power dissipation: 446W Case: TO247 Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 158nC Kind of package: tube Kind of channel: enhanced |
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| NTHL041N60S5H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Pulsed drain current: 200A Power dissipation: 329W Case: TO247 Gate-source voltage: ±30V On-state resistance: 32.8mΩ Mounting: THT Gate charge: 108nC Kind of package: tube Kind of channel: enhanced |
на замовлення 198 шт: термін постачання 21-30 дні (днів) |
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NTHL060N090SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 32A; Idm: 184A; 110W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 900V Drain current: 32A Pulsed drain current: 184A Power dissipation: 110W Case: TO247-3 Gate-source voltage: -10...20V On-state resistance: 60mΩ Mounting: THT Gate charge: 87nC Kind of package: tube Kind of channel: enhanced |
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| NTHL065N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 115A; 337W; TO247 Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 115A Power dissipation: 337W Case: TO247 Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced |
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| NTHL065N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 115A; 337W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 115A Power dissipation: 337W Case: TO247 Gate-source voltage: ±30V On-state resistance: 54mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced |
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NTHL080N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 136A; 58W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 31A Pulsed drain current: 136A Power dissipation: 58W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 80mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced |
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| NTHL080N120SC1A | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 132A; 178W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 22A Pulsed drain current: 132A Power dissipation: 178W Case: TO247 Gate-source voltage: ±25V On-state resistance: 114mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced |
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| NTHL082N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 25.5A; Idm: 100A; 313W; TO247 Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 25.5A Pulsed drain current: 100A Power dissipation: 313W Case: TO247 Gate-source voltage: ±30V On-state resistance: 82mΩ Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhanced |
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| NTHL095N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 22.8A; Idm: 90A; 272W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 22.8A Pulsed drain current: 90A Power dissipation: 272W Case: TO247 Gate-source voltage: ±30V On-state resistance: 78mΩ Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhanced |
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NVHL020N090SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 900V Drain current: 83A Pulsed drain current: 472A Power dissipation: 251W Case: TO247-3 Gate-source voltage: -10...19V On-state resistance: 28mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
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4N37M | ONSEMI |
 Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV CTR@If: 100%@10mA Collector-emitter voltage: 30V Case: DIP6 Turn-on time: 2µs Turn-off time: 2µs |
на замовлення 714 шт: термін постачання 21-30 дні (днів) |
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4N37SM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV CTR@If: 100%@10mA Collector-emitter voltage: 30V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 2µs |
на замовлення 1010 шт: термін постачання 21-30 дні (днів) |
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FDP8870 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 147A; 160W; TO220AB Mounting: THT Power dissipation: 160W Polarisation: unipolar Drain current: 147A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Kind of package: tube Case: TO220AB On-state resistance: 6.5mΩ Gate-source voltage: ±20V |
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FDS8870 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8 Mounting: SMD On-state resistance: 7.2mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 112nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 Drain-source voltage: 30V Drain current: 18A |
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MBRS240LT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 2A Max. load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.55V Case: SMB Kind of package: reel; tape |
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MC78L18ABPG | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 18V; 0.1A; TO92; THT; bulk Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: 18V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: bulk Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 20.7...33V Manufacturer series: MC78L00A |
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MC78L18ACPG | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 18V; 0.1A; TO92; THT; bulk Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: 18V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: bulk Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 20.7...33V Manufacturer series: MC78L00A |
на замовлення 239 шт: термін постачання 21-30 дні (днів) |
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| FODM3083 | ONSEMI |
Category: Optotriacs Description: Optotriac; 3.75kV; triac,zero voltage crossing driver; Ch: 1 Type of optocoupler: optotriac Insulation voltage: 3.75kV Kind of output: triac; zero voltage crossing driver Case: Mini-flat 4pin Max. off-state voltage: 6V Trigger current: 5mA Mounting: SMD Number of channels: 1 Manufacturer series: FODM308x |
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FODM3083R2 | ONSEMI |
Category: Optotriacs Description: Optotriac; 3.75kV; triac; Mini-flat 4pin; Ch: 1; FODM308x Type of optocoupler: optotriac Insulation voltage: 3.75kV Kind of output: triac Case: Mini-flat 4pin Mounting: SMD Number of channels: 1 Manufacturer series: FODM308x |
на замовлення 2365 шт: термін постачання 21-30 дні (днів) |
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CNY17F1M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 40-80%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 10µs Turn-off time: 10µs Max. off-state voltage: 6V Manufacturer series: CNY17 |
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CNY17F1SR2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V Mounting: SMD CTR@If: 40-80%@10mA Manufacturer series: CNY17 Type of optocoupler: optocoupler Case: Gull wing 6 Collector-emitter voltage: 100V Turn-on time: 2µs Turn-off time: 3µs Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV |
на замовлення 392 шт: термін постачання 21-30 дні (днів) |
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CNY17F1VM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 40-80%@10mA Collector-emitter voltage: 100V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 848 шт: термін постачання 21-30 дні (днів) |
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CNY17F2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 10µs Turn-off time: 10µs Max. off-state voltage: 6V Manufacturer series: CNY17 |
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CNY17F2SM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 63-125%@10mA Collector-emitter voltage: 100V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 251 шт: термін постачання 21-30 дні (днів) |
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CNY17F2SR2VM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 63-125%@10mA Collector-emitter voltage: 100V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
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CNY17F2TVM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 63-125%@10mA Collector-emitter voltage: 100V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
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CNY17F3M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100-200%@10mA Collector-emitter voltage: 100V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
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CNY17F3VM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 160-320%@10mA Collector-emitter voltage: 100V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 572 шт: термін постачання 21-30 дні (днів) |
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CNY17F4M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 160-320%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 10µs Turn-off time: 10µs Max. off-state voltage: 6V Manufacturer series: CNY17 |
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CNY17F4SR2VM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 160-320%@10mA Collector-emitter voltage: 100V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 504 шт: термін постачання 21-30 дні (днів) |
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CNY17F4TVM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 160-320%@10mA Collector-emitter voltage: 100V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 253 шт: термін постачання 21-30 дні (днів) |
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MC74AC374DTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP20; reel,tape; 80uA Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Mounting: SMD Case: TSSOP20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Trigger: positive-edge-triggered Kind of output: 3-state Quiescent current: 80µA |
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| MC74AC374DWG | ONSEMI |
Category: Flip-Flops Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20 Type of integrated circuit: digital Kind of integrated circuit: 3-state; D flip-flop; octal Number of channels: 8 Technology: CMOS Manufacturer series: AC Mounting: SMD Case: SOIC20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Family: AC Kind of output: 3-state |
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| MC74AC374DWR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20 Type of integrated circuit: digital Kind of integrated circuit: 3-state; D flip-flop; octal Number of channels: 8 Technology: CMOS Manufacturer series: AC Mounting: SMD Case: SOIC20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC Kind of output: 3-state |
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FQD13N06LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Power dissipation: 28W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 6.4nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2357 шт: термін постачання 21-30 дні (днів) |
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FQT13N06TF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.24A Pulsed drain current: 11.2A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±25V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhanced |
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| FQU13N06LTU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 44A; 28W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Pulsed drain current: 44A Power dissipation: 28W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: THT Gate charge: 6.4nC Kind of package: tube Kind of channel: enhanced |
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MC74HCT32ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 15ns Family: HCT |
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| MC74HCT32ADTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; HCT; 2÷6VDC; HCT Type of integrated circuit: digital Kind of gate: OR Number of channels: 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Manufacturer series: HCT Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HCT |
товар відсутній |
| MC74LVXC3245DTG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; TSSOP24
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP24
Type of integrated circuit: digital
Kind of output: 3-state
Technology: CMOS
Kind of package: tube
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Supply voltage: 2.3...3.6V DC; 3...5.5V DC
Manufacturer series: LVXC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; TSSOP24
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP24
Type of integrated circuit: digital
Kind of output: 3-state
Technology: CMOS
Kind of package: tube
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Supply voltage: 2.3...3.6V DC; 3...5.5V DC
Manufacturer series: LVXC
товар відсутній
| MC74LVXC3245DTRG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 2.3...5.5V DC
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: LVX
Quiescent current: 50µA
Kind of output: 3-state
Category: Level translators
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 2.3...5.5V DC
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: LVX
Quiescent current: 50µA
Kind of output: 3-state
товар відсутній
| MC74LVXC3245DWRG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 2.3...3.6V DC
Mounting: SMD
Case: SO24
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: 74LVXC
Kind of output: 3-state
Category: Level translators
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 2.3...3.6V DC
Mounting: SMD
Case: SO24
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: 74LVXC
Kind of output: 3-state
товар відсутній
| NJW3281G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 15A; 200W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 200W
Case: TO3P
Current gain: 45...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 15A; 200W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 200W
Case: TO3P
Current gain: 45...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
товар відсутній
| NJW21194G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 200W
Case: TO3P
Current gain: 20...80
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Application: automotive industry
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 200W
Case: TO3P
Current gain: 20...80
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Application: automotive industry
товар відсутній
| MMBT5088LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.05A; 0.225/0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 50mA
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.05A; 0.225/0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 50mA
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 2875 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.53 грн |
| 175+ | 2.11 грн |
| 500+ | 1.62 грн |
| 1375+ | 1.53 грн |
| SMMBT5088LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.05A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Current gain: 300...1200
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.05A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Current gain: 300...1200
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
товар відсутній
| FQPF47P06 |
|
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -21.2A; 62W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: -60V
Drain current: -21.2A
On-state resistance: 26mΩ
Type of transistor: P-MOSFET
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 110nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -21.2A; 62W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: -60V
Drain current: -21.2A
On-state resistance: 26mΩ
Type of transistor: P-MOSFET
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 110nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
товар відсутній
| FQPF47P06YDTU |
|
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -21.2A; Idm: -120A; 62W
Mounting: THT
Case: TO220FP
Kind of package: tube
Pulsed drain current: -120A
Power dissipation: 62W
Gate charge: 110nC
Polarisation: unipolar
Drain current: -21.2A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -21.2A; Idm: -120A; 62W
Mounting: THT
Case: TO220FP
Kind of package: tube
Pulsed drain current: -120A
Power dissipation: 62W
Gate charge: 110nC
Polarisation: unipolar
Drain current: -21.2A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 26mΩ
товар відсутній
| NCP4328ASNT1G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 2.5÷40V; TSOP5
Mounting: SMD
Operating temperature: -40...125°C
Type of integrated circuit: PMIC
Number of channels: 1
Case: TSOP5
Operating voltage: 2.5...40V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 2.5÷40V; TSOP5
Mounting: SMD
Operating temperature: -40...125°C
Type of integrated circuit: PMIC
Number of channels: 1
Case: TSOP5
Operating voltage: 2.5...40V
товар відсутній
| NCP4328BSNT1G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 2.5÷40V; TSOP6
Mounting: SMD
Operating temperature: -40...125°C
Type of integrated circuit: PMIC
Number of channels: 1
Case: TSOP6
Operating voltage: 2.5...40V
Frequency: 1kHz
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 2.5÷40V; TSOP6
Mounting: SMD
Operating temperature: -40...125°C
Type of integrated circuit: PMIC
Number of channels: 1
Case: TSOP6
Operating voltage: 2.5...40V
Frequency: 1kHz
товар відсутній
| FSBB30CH60C |
|
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMEC-027
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 3
Case: SPMEC-027
Output current: 30A
Number of channels: 6
Mounting: THT
Operating temperature: -40...150°C
Operating voltage: 13.5...16.5/0...400V
Power dissipation: 106W
Collector-emitter voltage: 600V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMEC-027
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 3
Case: SPMEC-027
Output current: 30A
Number of channels: 6
Mounting: THT
Operating temperature: -40...150°C
Operating voltage: 13.5...16.5/0...400V
Power dissipation: 106W
Collector-emitter voltage: 600V
товар відсутній
| FPF1018 |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; uDFN6
Case: uDFN6
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 34mΩ
Output current: 1.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Integrated circuit features: ESD-protected; output discharge
Kind of integrated circuit: high-side
Supply voltage: 0.8...1.8V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; uDFN6
Case: uDFN6
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 34mΩ
Output current: 1.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Integrated circuit features: ESD-protected; output discharge
Kind of integrated circuit: high-side
Supply voltage: 0.8...1.8V DC
товар відсутній
| FPF1038UCX |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.5A; Ch: 2; P-Channel; SMD; WLCSP6
Case: WLCSP6
Supply voltage: -0.3...6V DC
On-state resistance: 0.1Ω
Output current: 3.5A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: P-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.5A; Ch: 2; P-Channel; SMD; WLCSP6
Case: WLCSP6
Supply voltage: -0.3...6V DC
On-state resistance: 0.1Ω
Output current: 3.5A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: P-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
Mounting: SMD
товар відсутній
| FPF1048BUCX |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C
Operating temperature: -40...85°C
Case: WLCSP6
Mounting: SMD
Supply voltage: 1.5...5.5V DC
Active logical level: high
Type of integrated circuit: power switch
Integrated circuit features: ESD-protected
Kind of package: reel; tape
Number of channels: 1
On-state resistance: 90mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C
Operating temperature: -40...85°C
Case: WLCSP6
Mounting: SMD
Supply voltage: 1.5...5.5V DC
Active logical level: high
Type of integrated circuit: power switch
Integrated circuit features: ESD-protected
Kind of package: reel; tape
Number of channels: 1
On-state resistance: 90mΩ
товар відсутній
| FPF2002 |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 50mA; Ch: 1; P-Channel; SMD; SC70-5; reel,tape
Mounting: SMD
Case: SC70-5
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 1.8...5.5V DC
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Integrated circuit features: thermal protection; undervoltage protection
On-state resistance: 0.85Ω
Output current: 50mA
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; 50mA; Ch: 1; P-Channel; SMD; SC70-5; reel,tape
Mounting: SMD
Case: SC70-5
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 1.8...5.5V DC
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Integrated circuit features: thermal protection; undervoltage protection
On-state resistance: 0.85Ω
Output current: 50mA
Type of integrated circuit: power switch
товар відсутній
| FPF2004 |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.1A; Ch: 1; P-Channel; SMD; SC70-5
Mounting: SMD
Case: SC70-5
Kind of package: reel; tape
Supply voltage: 1.8...5.5V DC
Number of channels: 1
Kind of output: P-Channel
Kind of integrated circuit: high-side
On-state resistance: 0.7Ω
Output current: 0.1A
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.1A; Ch: 1; P-Channel; SMD; SC70-5
Mounting: SMD
Case: SC70-5
Kind of package: reel; tape
Supply voltage: 1.8...5.5V DC
Number of channels: 1
Kind of output: P-Channel
Kind of integrated circuit: high-side
On-state resistance: 0.7Ω
Output current: 0.1A
Type of integrated circuit: power switch
товар відсутній
| FPF2006 |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.1A; Ch: 1; P-Channel; SMD; SC70-5
Mounting: SMD
Case: SC70-5
Kind of package: reel; tape
Supply voltage: 1.8...5.5V DC
Number of channels: 1
Kind of output: P-Channel
Kind of integrated circuit: low-side
On-state resistance: 0.7Ω
Output current: 0.1A
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.1A; Ch: 1; P-Channel; SMD; SC70-5
Mounting: SMD
Case: SC70-5
Kind of package: reel; tape
Supply voltage: 1.8...5.5V DC
Number of channels: 1
Kind of output: P-Channel
Kind of integrated circuit: low-side
On-state resistance: 0.7Ω
Output current: 0.1A
Type of integrated circuit: power switch
товар відсутній
| NTHL020N090SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 427A; 251W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 83A
Pulsed drain current: 427A
Power dissipation: 251W
Case: TO247-3
Gate-source voltage: -10...19V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 427A; 251W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 83A
Pulsed drain current: 427A
Power dissipation: 251W
Case: TO247-3
Gate-source voltage: -10...19V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NTHL020N120SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 412A; 267W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 412A
Power dissipation: 267W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 412A; 267W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 412A
Power dissipation: 267W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NTHL033N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 53A; Idm: 175A; 500W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 53A
Pulsed drain current: 175A
Power dissipation: 500W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 53A; Idm: 175A; 500W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 53A
Pulsed drain current: 175A
Power dissipation: 500W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NTHL040N65S3F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 162.5A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 162.5A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NTHL041N60S5H |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 200A
Power dissipation: 329W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 32.8mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 200A
Power dissipation: 329W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 32.8mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 198 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 728.77 грн |
| 2+ | 488.51 грн |
| 5+ | 461.52 грн |
| NTHL060N090SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 32A; Idm: 184A; 110W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 32A
Pulsed drain current: 184A
Power dissipation: 110W
Case: TO247-3
Gate-source voltage: -10...20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 32A; Idm: 184A; 110W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 32A
Pulsed drain current: 184A
Power dissipation: 110W
Case: TO247-3
Gate-source voltage: -10...20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NTHL065N65S3F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 115A; 337W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 115A
Power dissipation: 337W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 115A; 337W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 115A
Power dissipation: 337W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NTHL065N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 115A; 337W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 115A
Power dissipation: 337W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 115A; 337W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 115A
Power dissipation: 337W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NTHL080N120SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 136A; 58W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 31A
Pulsed drain current: 136A
Power dissipation: 58W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 136A; 58W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 31A
Pulsed drain current: 136A
Power dissipation: 58W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NTHL080N120SC1A |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 132A; 178W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 22A
Pulsed drain current: 132A
Power dissipation: 178W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 114mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 132A; 178W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 22A
Pulsed drain current: 132A
Power dissipation: 178W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 114mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NTHL082N65S3F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25.5A; Idm: 100A; 313W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 25.5A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25.5A; Idm: 100A; 313W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 25.5A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NTHL095N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.8A; Idm: 90A; 272W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22.8A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.8A; Idm: 90A; 272W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22.8A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NVHL020N090SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 83A
Pulsed drain current: 472A
Power dissipation: 251W
Case: TO247-3
Gate-source voltage: -10...19V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 83A
Pulsed drain current: 472A
Power dissipation: 251W
Case: TO247-3
Gate-source voltage: -10...19V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| 4N37M | |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
на замовлення 714 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 28.32 грн |
| 17+ | 21.03 грн |
| 46+ | 17.58 грн |
| 125+ | 16.61 грн |
| 250+ | 16.4 грн |
| 4N37SM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 2µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 2µs
на замовлення 1010 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 49.18 грн |
| 14+ | 26.29 грн |
| 61+ | 13.29 грн |
| 166+ | 12.59 грн |
| FDP8870 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 147A; 160W; TO220AB
Mounting: THT
Power dissipation: 160W
Polarisation: unipolar
Drain current: 147A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 6.5mΩ
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 147A; 160W; TO220AB
Mounting: THT
Power dissipation: 160W
Polarisation: unipolar
Drain current: 147A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 6.5mΩ
Gate-source voltage: ±20V
товар відсутній
| FDS8870 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Mounting: SMD
On-state resistance: 7.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 112nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 30V
Drain current: 18A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Mounting: SMD
On-state resistance: 7.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 112nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 30V
Drain current: 18A
товар відсутній
| MBRS240LT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: SMB
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: SMB
Kind of package: reel; tape
товар відсутній
| MC78L18ABPG |
|
Виробник: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 18V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 18V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 20.7...33V
Manufacturer series: MC78L00A
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 18V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 18V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 20.7...33V
Manufacturer series: MC78L00A
товар відсутній
| MC78L18ACPG |
|
Виробник: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 18V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 18V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 20.7...33V
Manufacturer series: MC78L00A
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 18V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 18V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 20.7...33V
Manufacturer series: MC78L00A
на замовлення 239 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 29.81 грн |
| 16+ | 22.97 грн |
| 25+ | 19.72 грн |
| 78+ | 10.31 грн |
| 214+ | 9.76 грн |
| FODM3083 |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 3.75kV; triac,zero voltage crossing driver; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 3.75kV
Kind of output: triac; zero voltage crossing driver
Case: Mini-flat 4pin
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: FODM308x
Category: Optotriacs
Description: Optotriac; 3.75kV; triac,zero voltage crossing driver; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 3.75kV
Kind of output: triac; zero voltage crossing driver
Case: Mini-flat 4pin
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: FODM308x
товар відсутній
| FODM3083R2 |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 3.75kV; triac; Mini-flat 4pin; Ch: 1; FODM308x
Type of optocoupler: optotriac
Insulation voltage: 3.75kV
Kind of output: triac
Case: Mini-flat 4pin
Mounting: SMD
Number of channels: 1
Manufacturer series: FODM308x
Category: Optotriacs
Description: Optotriac; 3.75kV; triac; Mini-flat 4pin; Ch: 1; FODM308x
Type of optocoupler: optotriac
Insulation voltage: 3.75kV
Kind of output: triac
Case: Mini-flat 4pin
Mounting: SMD
Number of channels: 1
Manufacturer series: FODM308x
на замовлення 2365 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 235.47 грн |
| 5+ | 159.84 грн |
| 6+ | 134.62 грн |
| 17+ | 127.27 грн |
| CNY17F1M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 10µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 10µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: CNY17
товар відсутній
| CNY17F1SR2M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Mounting: SMD
CTR@If: 40-80%@10mA
Manufacturer series: CNY17
Type of optocoupler: optocoupler
Case: Gull wing 6
Collector-emitter voltage: 100V
Turn-on time: 2µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Mounting: SMD
CTR@If: 40-80%@10mA
Manufacturer series: CNY17
Type of optocoupler: optocoupler
Case: Gull wing 6
Collector-emitter voltage: 100V
Turn-on time: 2µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
на замовлення 392 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 41.73 грн |
| 19+ | 19.1 грн |
| 25+ | 15.91 грн |
| 59+ | 13.63 грн |
| 100+ | 13.15 грн |
| 161+ | 12.94 грн |
| CNY17F1VM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 100V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 100V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 848 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 41.73 грн |
| 23+ | 15.5 грн |
| 28+ | 12.8 грн |
| 100+ | 12.11 грн |
| CNY17F2M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 10µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 10µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: CNY17
товар відсутній
| CNY17F2SM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 100V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 100V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 251 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 49.18 грн |
| 21+ | 17.02 грн |
| 25+ | 14.05 грн |
| 66+ | 12.39 грн |
| 180+ | 11.69 грн |
| CNY17F2SR2VM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 100V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 100V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
товар відсутній
| CNY17F2TVM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 100V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 100V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
товар відсутній
| CNY17F3M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 100V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 100V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
товар відсутній
| CNY17F3VM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 100V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 100V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 572 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 33.16 грн |
| 17+ | 20.69 грн |
| 50+ | 17.09 грн |
| 55+ | 14.95 грн |
| 149+ | 14.12 грн |
| CNY17F4M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 10µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 10µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: CNY17
товар відсутній
| CNY17F4SR2VM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 100V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 100V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 504 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 29.73 грн |
| 20+ | 18.13 грн |
| 50+ | 16.12 грн |
| 57+ | 13.91 грн |
| 157+ | 13.15 грн |
| CNY17F4TVM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 100V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 100V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 253 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 41.73 грн |
| 19+ | 18.27 грн |
| 25+ | 15.06 грн |
| 100+ | 14.27 грн |
| MC74AC374DTR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP20; reel,tape; 80uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state
Quiescent current: 80µA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP20; reel,tape; 80uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state
Quiescent current: 80µA
товар відсутній
| MC74AC374DWG |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: SOIC20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
Kind of output: 3-state
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: SOIC20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
Kind of output: 3-state
товар відсутній
| MC74AC374DWR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: SOIC20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Kind of output: 3-state
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: SOIC20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Kind of output: 3-state
товар відсутній
| FQD13N06LTM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2357 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 31.52 грн |
| 25+ | 26.22 грн |
| 39+ | 20.62 грн |
| 107+ | 19.51 грн |
| FQT13N06TF |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.24A
Pulsed drain current: 11.2A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±25V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.24A
Pulsed drain current: 11.2A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±25V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FQU13N06LTU |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 44A; 28W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 28W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 6.4nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 44A; 28W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 28W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 6.4nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| MC74HCT32ADR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 15ns
Family: HCT
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 15ns
Family: HCT
товар відсутній
| MC74HCT32ADTR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; HCT; 2÷6VDC; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Manufacturer series: HCT
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; HCT; 2÷6VDC; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Manufacturer series: HCT
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
товар відсутній