1N4246/TR Microchip Technology
Виробник: Microchip TechnologyDescription: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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Технічний опис 1N4246/TR Microchip Technology
Description: DIODE GENERAL PURPOSE TH, Packaging: Tape & Box (TB), Package / Case: R-1, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 5 µs, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: GPR-1A, Operating Temperature - Junction: -65°C ~ 200°C, Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 400 V.
Інші пропозиції 1N4246/TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| 1N4246 TR | Виробник : Central Semiconductor Corp |
Description: DIODE GENERAL PURPOSE TH Packaging: Tape & Box (TB) Package / Case: R-1, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: GPR-1A Operating Temperature - Junction: -65°C ~ 200°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
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1N4246/TR | Виробник : Microchip Technology |
Rectifiers Rectifier |
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| 1N4246 TR | Виробник : Central Semiconductor | Central Semiconductor |
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