1SS427,L3M Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE GEN PURP 80V 100MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
10000+ | 2.45 грн |
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Технічний опис 1SS427,L3M Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA SOD923, Packaging: Tape & Reel (TR), Package / Case: SOD-923, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 1.6 ns, Technology: Standard, Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz, Current - Average Rectified (Io): 100mA, Supplier Device Package: SOD-923, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Current - Reverse Leakage @ Vr: 500 nA @ 80 V.
Інші пропозиції 1SS427,L3M за ціною від 2.21 грн до 19.48 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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1SS427,L3M | Виробник : Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 80V 100MA SOD923 Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.6 ns Technology: Standard Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SOD-923 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 41730 шт: термін постачання 21-31 дні (днів) |
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1SS427,L3M | Виробник : Toshiba | Diodes - General Purpose, Power, Switching 300mA SW DIODE |
на замовлення 9427 шт: термін постачання 21-30 дні (днів) |
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