2N5962-D26Z

2N5962-D26Z ON Semiconductor


mmbt5962cn-d.pdf Виробник: ON Semiconductor
Trans GP BJT NPN 45V 0.1A 3-Pin TO-92 T/R
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис 2N5962-D26Z ON Semiconductor

Description: TRANS NPN 45V 0.1A TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 2nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 10mA, 5V, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 625 mW.

Інші пропозиції 2N5962-D26Z

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
2N5962_D26Z 2N5962_D26Z Виробник : onsemi 2N5962.pdf Description: TRANS NPN 45V 0.1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 10mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
товар відсутній