Технічний опис 2N657S MOT
Description: POWER BJT, Packaging: Bulk, Package / Case: TO-205AA, TO-5-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Supplier Device Package: TO-5AA, Part Status: Active, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 600 mW.
Інші пропозиції 2N657S
| Фото | Назва | Виробник | Інформація |
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2N657S | Виробник : Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-5AA Part Status: Active Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 600 mW |
товар відсутній |
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| 2N657S | Виробник : Microchip Technology | Bipolar Transistors - BJT Power BJT |
товар відсутній |