Технічний опис 2SA2169-E onsemi
Description: TRANS PNP 50V 10A TP, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 580mV @ 250mA, 5A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V, Frequency - Transition: 130MHz, Supplier Device Package: TP, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 950 mW.
Інші пропозиції 2SA2169-E
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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2SA2169-E | Виробник : ON Semiconductor |
 Trans GP BJT PNP 50V 10A 950mW 3-Pin(3+Tab) IPAK Bag |
товар відсутній |
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2SA2169-E | Виробник : onsemi |
Description: TRANS PNP 50V 10A TP Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 580mV @ 250mA, 5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Frequency - Transition: 130MHz Supplier Device Package: TP Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 950 mW |
товар відсутній |