2SA2169-TL-E onsemi
Виробник: onsemi
Description: TRANS PNP 50V 10A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 580mV @ 250mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 950 mW
Description: TRANS PNP 50V 10A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 580mV @ 250mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 950 mW
на замовлення 9800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 671+ | 29.55 грн |
Відгуки про товар
Написати відгук
Технічний опис 2SA2169-TL-E onsemi
Description: TRANS PNP 50V 10A TP-FA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 580mV @ 250mA, 5A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V, Frequency - Transition: 130MHz, Supplier Device Package: TP-FA, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 950 mW.
Інші пропозиції 2SA2169-TL-E
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
2SA2169-TL-E | Виробник : onsemi |
 Bipolar Transistors - BJT BIP PNP 10A 50V |
на замовлення 700 шт: термін постачання 21-30 дні (днів) |
|
 |
2SA2169-TL-E | Виробник : ON Semiconductor |
Trans GP BJT PNP 50V 10A 950mW 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
|
|
|
2SA2169-TL-E | Виробник : onsemi |
Description: TRANS PNP 50V 10A TP-FA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 580mV @ 250mA, 5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Frequency - Transition: 130MHz Supplier Device Package: TP-FA Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 950 mW |
товар відсутній |
|
|
|
2SA2169-TL-E | Виробник : onsemi |
Description: TRANS PNP 50V 10A TP-FA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 580mV @ 250mA, 5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Frequency - Transition: 130MHz Supplier Device Package: TP-FA Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 950 mW |
товар відсутній |