Технічний опис 2SC5707-E ON Semiconductor
Description: TRANS NPN 50V 8A TP, Packaging: Bag, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 240mV @ 175mA, 3.5A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V, Frequency - Transition: 330MHz, Supplier Device Package: TP, Part Status: Obsolete, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1 W.
Інші пропозиції 2SC5707-E
| Фото | Назва | Виробник | Інформація |
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2SC5707-E | Виробник : ONSEMI |
 Description: ONSEMI - 2SC5707-E - Bipolarer Einzeltransistor (BJT), NPN, 50 V, 8 A, 15 W, TO-251, DurchsteckmontageTransistormontage: Durchsteckmontage DC-Stromverstärkung hFE: 200 Verlustleistung Pd: 15 Übergangsfrequenz ft: 330 Bauform - Transistor: TO-251 Kollektor-Emitter-Spannung V(br)ceo: 50 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: NPN DC-Kollektorstrom: 8 Betriebstemperatur, max.: 150 SVHC: Lead (19-Jan-2021) |
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2SC5707-E | Виробник : onsemi |
Description: TRANS NPN 50V 8A TP Packaging: Bag Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 240mV @ 175mA, 3.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 330MHz Supplier Device Package: TP Part Status: Obsolete Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
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2SC5707-E | Виробник : onsemi |
Bipolar Transistors - BJT BIP NPN 8A 50V |
товар відсутній |