AOB20S60L Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 20A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V
на замовлення 788 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 207.46 грн |
| 10+ | 167.59 грн |
| 100+ | 135.55 грн |
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Технічний опис AOB20S60L Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 20A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V, Power Dissipation (Max): 266W (Tc), Vgs(th) (Max) @ Id: 4.1V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V.
Інші пропозиції AOB20S60L
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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AOB20S60L | Виробник : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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AOB20S60L | Виробник : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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| AOB20S60L | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 80A; 266W; TO263 Case: TO263 Gate charge: 19.8nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 80A Drain-source voltage: 600V Drain current: 14A On-state resistance: 530mΩ Type of transistor: N-MOSFET Power dissipation: 266W Polarisation: unipolar кількість в упаковці: 1 шт |
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AOB20S60L | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 20A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V Power Dissipation (Max): 266W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V |
товар відсутній |
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| AOB20S60L | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 80A; 266W; TO263 Case: TO263 Gate charge: 19.8nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 80A Drain-source voltage: 600V Drain current: 14A On-state resistance: 530mΩ Type of transistor: N-MOSFET Power dissipation: 266W Polarisation: unipolar |
товар відсутній |