AONS21357 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 21A/36A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
Description: MOSFET P-CH 30V 21A/36A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 16.88 грн |
| 6000+ | 15.4 грн |
| 9000+ | 14.26 грн |
| 30000+ | 13.25 грн |
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Технічний опис AONS21357 Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 21A/36A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 36A (Tc), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 48W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V.
Інші пропозиції AONS21357 за ціною від 17.13 грн до 44.42 грн
| Фото | Назва | Виробник | Інформація |
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AONS21357 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 21A/36A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V |
на замовлення 48287 шт: термін постачання 21-31 дні (днів) |
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AONS21357 | Виробник : Alpha & Omega Semiconductor |
 30V P-Channel MOSFET |
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AONS21357 | Виробник : Alpha & Omega Semiconductor |
30V P-Channel MOSFET |
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AONS21357 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -36A; 19W; DFN5x6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -36A Power dissipation: 19W Case: DFN5x6 Gate-source voltage: ±25V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 25nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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AONS21357 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -36A; 19W; DFN5x6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -36A Power dissipation: 19W Case: DFN5x6 Gate-source voltage: ±25V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 25nC Kind of channel: enhanced |
товар відсутній |