AOTF10B60D ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 16.7W; TO220F; Eoff: 0.16mJ; Eon: 0.35mJ
Mounting: THT
Pulsed collector current: 40A
Turn-on time: 25ns
Turn-off time: 80.8ns
Type of transistor: IGBT
Collector-emitter voltage: 600V
Case: TO220F
Gate-emitter voltage: ±20V
Kind of package: tube
Gate charge: 17.4nC
Turn-on switching energy: 0.35mJ
Turn-off switching energy: 0.16mJ
Power dissipation: 16.7W
Collector-emitter saturation voltage: 1.53V
Collector current: 10A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 16.7W; TO220F; Eoff: 0.16mJ; Eon: 0.35mJ
Mounting: THT
Pulsed collector current: 40A
Turn-on time: 25ns
Turn-off time: 80.8ns
Type of transistor: IGBT
Collector-emitter voltage: 600V
Case: TO220F
Gate-emitter voltage: ±20V
Kind of package: tube
Gate charge: 17.4nC
Turn-on switching energy: 0.35mJ
Turn-off switching energy: 0.16mJ
Power dissipation: 16.7W
Collector-emitter saturation voltage: 1.53V
Collector current: 10A
на замовлення 899 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
4+ | 105.6 грн |
5+ | 86.93 грн |
12+ | 68.85 грн |
33+ | 65.37 грн |
500+ | 64.68 грн |
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Технічний опис AOTF10B60D ALPHA & OMEGA SEMICONDUCTOR
Description: IGBT 600V 20A 42W TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 105 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A, Supplier Device Package: TO-220F, Td (on/off) @ 25°C: 10ns/72ns, Switching Energy: 260µJ (on), 70µJ (off), Test Condition: 400V, 10A, 30Ohm, 15V, Gate Charge: 17.4 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 42 W.
Інші пропозиції AOTF10B60D за ціною від 77.61 грн до 126.72 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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AOTF10B60D | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 16.7W; TO220F; Eoff: 0.16mJ; Eon: 0.35mJ Mounting: THT Pulsed collector current: 40A Turn-on time: 25ns Turn-off time: 80.8ns Type of transistor: IGBT Collector-emitter voltage: 600V Case: TO220F Gate-emitter voltage: ±20V Kind of package: tube Gate charge: 17.4nC Turn-on switching energy: 0.35mJ Turn-off switching energy: 0.16mJ Power dissipation: 16.7W Collector-emitter saturation voltage: 1.53V Collector current: 10A кількість в упаковці: 1 шт |
на замовлення 899 шт: термін постачання 7-14 дні (днів) |
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AOTF10B60D | Виробник : Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 20A 42000mW 3-Pin(3+Tab) TO-220F |
товар відсутній |
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AOTF10B60D | Виробник : Alpha & Omega Semiconductor Inc. |
Description: IGBT 600V 20A 42W TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A Supplier Device Package: TO-220F Td (on/off) @ 25°C: 10ns/72ns Switching Energy: 260µJ (on), 70µJ (off) Test Condition: 400V, 10A, 30Ohm, 15V Gate Charge: 17.4 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 42 W |
товар відсутній |