AOTF9N90

AOTF9N90 Alpha & Omega Semiconductor


51134003699733376aotf9n90.pdf Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-220F Tube
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Технічний опис AOTF9N90 Alpha & Omega Semiconductor

Description: MOSFET N-CH 900V 9A TO220-3F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220F, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 25 V.

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AOTF9N90 AOTF9N90 Виробник : Alpha & Omega Semiconductor 51134003699733376aotf9n90.pdf Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-220F Tube
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AOTF9N90 AOTF9N90 Виробник : ALPHA & OMEGA SEMICONDUCTOR AOTF9N90-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 46nC
Kind of channel: enhanced
кількість в упаковці: 1000 шт
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AOTF9N90 AOTF9N90 Виробник : Alpha & Omega Semiconductor Inc. TO220F.pdf Description: MOSFET N-CH 900V 9A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 25 V
товар відсутній
AOTF9N90 AOTF9N90 Виробник : ALPHA & OMEGA SEMICONDUCTOR AOTF9N90-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 46nC
Kind of channel: enhanced
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