Технічний опис APT150GN60LDQ4G Microchip Technology
Category: THT IGBT transistors, Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; TO264, Type of transistor: IGBT, Collector current: 123A, Case: TO264, Mounting: THT, Gate-emitter voltage: ±30V, Pulsed collector current: 450A, Turn-on time: 154ns, Turn-off time: 575ns, Collector-emitter voltage: 600V, Power dissipation: 536W, Technology: Field Stop, Features of semiconductor devices: integrated anti-parallel diode, Kind of package: tube, Gate charge: 970nC, кількість в упаковці: 1 шт.
Інші пропозиції APT150GN60LDQ4G
| Фото | Назва | Виробник | Інформація |
Доступність |
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APT150GN60LDQ4G | Виробник : Microchip Technology |
 Trans IGBT Chip N-CH 600V 220A 536000mW 3-Pin(3+Tab) TO-264 Tube |
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APT150GN60LDQ4G | Виробник : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; TO264 Type of transistor: IGBT Collector current: 123A Case: TO264 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 450A Turn-on time: 154ns Turn-off time: 575ns Collector-emitter voltage: 600V Power dissipation: 536W Technology: Field Stop Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 970nC кількість в упаковці: 1 шт |
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APT150GN60LDQ4G | Виробник : Microchip Technology |
Description: IGBT 600V 220A 536W TO-264L |
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| APT150GN60LDQ4G | Виробник : Microchip Technology |
IGBT Modules FG, IGBT, 600V, 100A,TO-264, RoHS |
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APT150GN60LDQ4G | Виробник : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; TO264 Type of transistor: IGBT Collector current: 123A Case: TO264 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 450A Turn-on time: 154ns Turn-off time: 575ns Collector-emitter voltage: 600V Power dissipation: 536W Technology: Field Stop Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 970nC |
товар відсутній |