на замовлення 115 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 462.66 грн |
| 100+ | 393.41 грн |
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Технічний опис APT30F50S Microchip Technology
Description: MOSFET N-CH 500V 30A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 14A, 10V, Power Dissipation (Max): 415W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: D3Pak, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4525 pF @ 25 V.
Інші пропозиції APT30F50S
| Фото | Назва | Виробник | Інформація |
Доступність |
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APT30F50S | Виробник : Microchip Technology |
 Trans MOSFET N-CH Si 500V 30A 3-Pin(2+Tab) D3PAK Tube |
товар відсутній |
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APT30F50S | Виробник : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 90A; 415W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 19A Pulsed drain current: 90A Power dissipation: 415W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 115nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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APT30F50S | Виробник : Microchip Technology |
Description: MOSFET N-CH 500V 30A D3PAK Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 14A, 10V Power Dissipation (Max): 415W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4525 pF @ 25 V |
товар відсутній |
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APT30F50S | Виробник : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 90A; 415W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 19A Pulsed drain current: 90A Power dissipation: 415W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 115nC Kind of channel: enhanced |
товар відсутній |