APT5024SLLG MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 265W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 43nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис APT5024SLLG MICROCHIP (MICROSEMI)
Description: MOSFET N-CH 500V 22A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 11A, 10V, Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: D3Pak, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V.
Інші пропозиції APT5024SLLG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
APT5024SLLG | Виробник : Microchip Technology |
Description: MOSFET N-CH 500V 22A D3PAK Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V |
товар відсутній |
|
 |
APT5024SLLG | Виробник : Microchip Technology |
MOSFET MOSFET MOS7 500 V 240 mOhm TO-268 |
товар відсутній |
|
|
|
APT5024SLLG | Виробник : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Pulsed drain current: 88A Power dissipation: 265W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 43nC Kind of channel: enhanced |
товар відсутній |