Технічний опис APT5024SVRG Microsemi
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A, Type of transistor: N-MOSFET, Technology: POWER MOS 5®, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 22A, Pulsed drain current: 88A, Power dissipation: 280W, Case: D3PAK, Gate-source voltage: ±30V, On-state resistance: 0.24Ω, Mounting: SMD, Gate charge: 0.21µC, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції APT5024SVRG
| Фото | Назва | Виробник | Інформація |
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APT5024SVRG | Виробник : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Pulsed drain current: 88A Power dissipation: 280W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 0.21µC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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APT5024SVRG | Виробник : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Pulsed drain current: 88A Power dissipation: 280W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 0.21µC Kind of channel: enhanced |
товар відсутній |