APT56M60B2 Microchip / Microsemi
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
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Технічний опис APT56M60B2 Microchip / Microsemi
Description: MOSFET N-CH 600V 60A TO247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 28A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: TO-247 [B], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V.
Інші пропозиції APT56M60B2
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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APT56M60B2 | Виробник : Microchip Technology |
 Trans MOSFET N-CH Si 600V 60A 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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APT56M60B2 | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 1040W; TO247 Mounting: THT Case: TO247 Kind of package: tube Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 1.04kW On-state resistance: 0.11Ω Drain current: 60A Drain-source voltage: 600V Gate charge: 280nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V кількість в упаковці: 1 шт |
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APT56M60B2 | Виробник : Microchip Technology |
Description: MOSFET N-CH 600V 60A TO247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 28A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V |
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APT56M60B2 | Виробник : Microchip Technology |
MOSFET MOSFET MOS8 600 V 56 A TO-247 MAX |
товар відсутній |
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APT56M60B2 | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 1040W; TO247 Mounting: THT Case: TO247 Kind of package: tube Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 1.04kW On-state resistance: 0.11Ω Drain current: 60A Drain-source voltage: 600V Gate charge: 280nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V |
товар відсутній |