APT75GN60SDQ2G Microchip Technology
Виробник: Microchip TechnologyDescription: IGBT TRENCH FS 600V 155A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
Supplier Device Package: D3Pak
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 47ns/385ns
Switching Energy: 2.5mJ (on), 2.14mJ (off)
Test Condition: 400V, 75A, 1Ohm, 15V
Gate Charge: 485 nC
Current - Collector (Ic) (Max): 155 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 536 W
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 710.28 грн |
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Технічний опис APT75GN60SDQ2G Microchip Technology
Description: IGBT TRENCH FS 600V 155A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 25 ns, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A, Supplier Device Package: D3Pak, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 47ns/385ns, Switching Energy: 2.5mJ (on), 2.14mJ (off), Test Condition: 400V, 75A, 1Ohm, 15V, Gate Charge: 485 nC, Current - Collector (Ic) (Max): 155 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 225 A, Power - Max: 536 W.
Інші пропозиції APT75GN60SDQ2G за ціною від 657.84 грн до 771.49 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||
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APT75GN60SDQ2G | Виробник : Microchip Technology |
IGBT Transistors IGBT Fieldstop Low Frequency Combi 600 V 75 A TO-268 |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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APT75GN60SDQ2G | Виробник : Microchip Technology |
Trans IGBT Chip N-CH 600V 155A 536000mW 3-Pin(2+Tab) D3PAK Tube |
товар відсутній |
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APT75GN60SDQ2G | Виробник : MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; D3PAK Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: D3PAK Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: SMD Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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APT75GN60SDQ2G | Виробник : MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; D3PAK Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: D3PAK Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: SMD Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |