APTC80H29SCTG MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 11A
On-state resistance: 0.29Ω
Power dissipation: 156W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 60A
Case: SP4
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 11A
On-state resistance: 0.29Ω
Power dissipation: 156W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 60A
Case: SP4
кількість в упаковці: 1 шт
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Технічний опис APTC80H29SCTG MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw, Type of module: MOSFET transistor, Semiconductor structure: SiC diode/transistor, Drain-source voltage: 800V, Drain current: 11A, On-state resistance: 0.29Ω, Power dissipation: 156W, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Technology: CoolMOS™; SiC; SJ-MOSFET, Gate-source voltage: ±30V, Topology: H-bridge; NTC thermistor, Pulsed drain current: 60A, Case: SP4, кількість в упаковці: 1 шт.
Інші пропозиції APTC80H29SCTG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTC80H29SCTG | Виробник : Microchip Technology |
Description: MOSFET 4N-CH 800V 15A SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 156W Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 15A Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: SP4 |
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APTC80H29SCTG | Виробник : Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-COOLMOS-SBD-SP4 |
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APTC80H29SCTG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 800V Drain current: 11A On-state resistance: 0.29Ω Power dissipation: 156W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 60A Case: SP4 |
товар відсутній |