Технічний опис APTM20AM05FG MICROCHIP (MICROSEMI)
Description: MOSFET 2N-CH 200V 317A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1136W, Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 317A, Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V, Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 10mA, Supplier Device Package: SP6.
Інші пропозиції APTM20AM05FG
| Фото | Назва | Виробник | Інформація |
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| APTM20AM05FG | Виробник : Microchip Technology |
 Description: MOSFET 2N-CH 200V 317A SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1136W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 317A Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 |
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| APTM20AM05FG | Виробник : Microsemi |
Discrete Semiconductor Modules Power Module - Mosfet |
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